Igct
Igct
Igct
Low losses, small size, reliable, modular and cost-effective uncompromising implementation of IGCT technology creates medium voltage converters with entirely new characteristics.
supported by snubber circuits The basic principle of the GCT resolves these problems, because the device now has what is referred to as a hard drive (Fig.2), i.e. instead of diG/dt @ 50A/s, diG/dt 3000A/s is applied
IA [kA]
4 3
IK [kA]
2 1 0
IG [kA]
-1 -2 -3 5 10
Thyristor
Transistor
Fig.2: Typical turn-off characteristic of a 4,5kV 3kA GTO to the gate. The current is thus switched from the cathode to the gate and the anode can be observed. The conductivity and therefore the low anode voltage remain unchanged for as long as this changes directly from the thyristor to the transistor mode and turns off as stably, fast and without the help of a snubber circuit as an IGBT (Insulated Gate Bipolar Transistor). 1st step towards an IGCT converter a low inductance drive The rate of change of the drive is critical for the operation of the GCT. The anode current has to be turned off in less than 1s otherwise the device moses into the unstable part of the characteristic. This corresponds to
VG [V]
VA [kV]
VA
diG/dt 3000A/s for a 3kA GCT and proportionally more or less for other types. The voltage needed results for a given inductance of the gate circuit, respectively the inductance for a given gate voltage. On the other hand, a simple, reliable and cost effective drive unit is only possible at low voltages. An ideal volta-ge is 20V, because the gate can withstand this voltage after turn-off. The permissible leakage inductance for interrupting 3kA is 6nH or less which is only1/50 of the usual value for a GTO. It was possible to achieve this value by adopting a coaxial configuration of the device connection and a multi layer connection to the power output of the drive. (Fig.3).
Fig. 3: 4.5kV, 3kA, IGCT (Integrated Gate Commutated Thyristor). The GCT and the gate unit form a single part. The PCB (3) conneects the GCT and the drive.
2nd step towards an IGCT converter optimum silicone technology. The so-called hard drive solves the GTOs drive problem. This actually also improves a standard GTO wafer
Interdisciplinary development
Know-how from many disciplines is essential to develop high-power converters. This is where low-power electronics for the control circuit, silicone technologyfor the power semiconductors, metallurgy and ceramics for the hermtically sealed semiconductor housing, power electronics for the main circuit, conductors and cooling and mechanical engineering for the layout and construction all converge. The circuits of GTO converters are complex and a feature of their development is the many interfaces that were necessary.
IA IK
IK >>0 and VA >>0!
3 2 1 0
VA IG
5 10 Thyristor 15 t [s] Unstable Transistor 20 Non Conducting Transistor 25
Turgi
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1998 Reprint
ABB Industrie AG
and the GCT manufacturer no longer has to compromise when designing the wafer in order to obtain the desired switching characteristic. The GCT wafer can be much thinner than GTO wafer and this smoothes the way to the utilisation of plasma engineering techniques. For this reason, GCTs generate much lower losses than GTOs. (Fig. 4)
Every segment of the wafer, of which a 3 kA unit has more than 2000, knows when it has to switch and excecutes the corresponding command independently of the others: Since all
Fig. 5: GCT (1) and diode (2) on the same wafer. The gate has its contact at the centre (3) on the 51 mm disc (6 kV, 520 A).
Drive circuit
Fig. 7: Reverse conducting GCT with wafer diameters of 38 mm, 51 mm, 68 mm and 91mm and a 91 mm GCT
the segments respond in exactly the same way, optimum parralel operation is achieved and the switching capacity varies in proportion to wafer area. It is therefore relatively simple to develop an approproately graded family of GCT devices (Fig.7). 4th. step towards an IGCT converter reducing circuit complexity. GCTs turn off in the same way as transistors. In contrast to a GTO, a GCT converter does not therefore need snubber condensers, diodes and resistors. It is still necessary, however, to limit the current rise time (dI/dt) when turning a GCT on, because the speed of the high-voltage
Fig. 4: A comparison between GTO 5SGA 40L4501 and GCT 5SGY 35L4502. The commuta-tion losses of both devices are approximately the same.
Cooler GCT
Fig. 6: GCT and drive circuit slide onto the cooler to form a single unit both electrically and mechanically.
main separate. Hybrid integration only achieves a closer blending of GCT and the diode have to remain separate. Hybrid integration achieves a closer blending of GCT, drive unit and cooler (Fig.6). The synergies of the mechanical construction produce advantages with respect to reduced size, greater stability and lower costs. The hard unambiguous drive achieves an overall even, smoother operation.
3rd. step towards an IGCT converter higher converter integration and linear sizing with current IGCT technology applies two levels of integration: monolithic on the wafer and hybrid for the periphery of the GCT. In many cases, the antiparallel diodes can be integrated monolithically (Fig. 5). This eliminates the diode stack and associated heavy current connections. Integration of this kind only becomes impractical at the highest currents and the GCT and the diode have to re-
Fig.8: Typical circuit of a three phase IGCT converter. A common supervision unit continually checks switch.
silicone diodes is nothing like that of the low-voltage diodes used in IGBT applications. A new heavy current circuit, on the other hand, enables all the phases of an in-verter to be connected to the same DC bus (Fig. 8). This brings the overall cost of an IGCT converter down to about the same level as for a conventional IGBT converter.
1998 Reprint
ABB Industrie AG
by ABB for low-voltage drives in 1995, commutates the IGBTs in the two-point inverter in the ACS600 for limited periods at up to more than 20 kHz. As early as the end of 1997, after a development period of just two years, ABB presented the first of a series of mediumvoltage converters, i.e. the ACS1000 with DTC, three-point IGCT converter and sinusoidal output filter (Fig.11). The most important features of this series Fig. 11: Air-cooled drive converter of the ACS1000 series (4.16 kV, 1.2 MW sinusoidal output) of drives are: A mean commutating frequency of 500 Hz for a three-point Excellent component characteristics converter corresponding to about 2 High rated voltage kHz for a two-point circuit Low turn-on and commutation losses Fig. 9: 100 MW Bremenrailway sys Highly dynamic commutating fre High commutation frequency and tem inter-tie quency intermittently up to 7 kHz absolute peak limit frequency Sinusoidal output with low harmonic Good utilisation of the silicone area content Even current distribution in the sili DTC with all its well-known advancone tages Linear relationship between the ac Small size tive wafer area and currentrating Low number of power semiconduc Relatively easy to model Optimum tors (total of 12 in a three-point concircuit design verter) All three phases suppliedfrom a High reliability (MTBF > 6 years) common DC bus High overall efficiency > 98 % Central dI/dt limiter with integrated Widerange of types from 2.3 kV to clamp 4.16 kV and from 315 kW to 5 kW Uncritical connection of theinterme Simple as the ACS600 to commisdiate circuit sion Absolute safety even underworst Supply for existing, previously uncase conditions regulated motors (retro-fit) Simple drive circuit Fig. 10: Air-cooled three-phase Directly coupled gate signal (on / off) 1.5 MW phase module for a commuSummary and outlook No regulator circuit (dV/dt,dI/dt) In the few years since its incep-tion, Two-wire low-power supply Superior tating frequency of 1050 Hz IGCT technology has been able to performance superior reliability of these devices and establish itself firmly in the medium Only few components: all standard the ease with which they can be convoltage range of applications. Its close Modular mechanical construction nected in series. IGCTs are capable of relationship with the GTO and IGBT Monolithic integration up to the highhigh commutation frequencies at high facilitated a development in finite calest ratings power ratings. They are also ideal for culable steps (Fig. 12). It unifies the Ideally matched power semiconhighly dynamic applications such as advantages of its predecessors and ductors, control system and cooler NBPS (no-break power supplies) (Fig. overcomes their disadvan-tages.The Robust pressure contact technique 10). A dynamic response is also exmain features and advantages of with simple centring pected of traction inverters: the direct IGCT technology Modular design torque control (DTC) system launched Simple to service High overall efficiency e Highest possible reliability eden gen hi Small size and low weight versc endun Anw Well-defined manageable interfaces eitere Plastik-Gehuse w to the intermediate circuit, load and Integrierter Khler control system 80% Modulare GU Highest powers manageable RTh Reduktion Reliable series operation 250A - 4kA GCT Familie Further enhanced reliability due to 6kA / 4,5kV 91mm GCT redundant stages when connected in 40% series 1kA / 6kV rckwrtsleitend With these characteristics and its Dioden ohne Snubber other potential strengths, the IGCT is Transparenter Emitter the ideal successor to the GTO. 3kA / 4,5kV GCT Hart gesteuerter GTO *Horst Grning 0% GCT Converter Development ABB Industrie AG, Switzer 1993 1995 1997 1999 2001 2003
100MVA Bahnnetzkupplung
IGCT converters in operation The first IGCTs were installed in plants built by ABB. The most prominent representative of these is most certainly the 100 MW Bremen railway system intertie (Fig. 9). 288 GCTs have operated without failure in this installation since 1996. It is an example both for the
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