BJT Model From Datasheet

BJT model from Datasheet
BJT bipolar transistors require a certain number of parameters to get a good model.The syntax for this model is: .model ModelNameNPN (par1=a par2=b.........parn=x) for PNP case: .model ModelNamePNP (par1=a par2=b.........parn=x) where par1 par2.......parn are the parameters that allow to model equations of the BJT. The main parameters for a reasonable modeling of the behavior of the component are summarized in the following table:
Parameters Description
Units
Default
IS XTI EG VAF BF ISE NE IKF NK XTB BR ISC NC IKR RC CJC MJC VJC
Transport saturation current IS temperature effect exponent Bandgap voltage (barrier height) Forward Early voltage Ideal maximum forward beta Base-emitter leakage saturation current Base-emitter leakage emission coefficient Corner for forward-beta high-current roll-off High-current roll-off coefficient Forward and reverse beta temperature coefficient Ideal maximum reverse beta Base-collector leakage saturation current Base-collector leakage emission coefficient Corner for reverse-beta high-current roll-off Collector ohmic resistance Base-collector zero-bias p-n capacitance Base-collector p-n grading factor
A eV V A A
1e-16 1.11 Infinite 0 Infinite
no unit dimension 3.0
no unit dimension 100 no unit dimension 1.5 no unit dimension 0.5 no unit dimension 0 no unit dimension 1.0 A A Ohm F V 0 Infinite 0 0 0.75 no unit dimension 2.0
no unit dimension 0.33
FC CJE MJE VJE TR TF ITF XTF VTF RB Pag. 1 of 7 1|2|>
Forward-bias depletion capacitor coefficient Base-emitter zero-bias p-n capacitance Base-emitter p-n grading factor Base-emitter built-in potential Ideal reverse transit time Ideal forward transit time Transit time dependency on Ic Transit time bias dependence coefficient Transit time dependency on Vbc Zero-bias (maximum) base resistance
no unit dimension 0.5 F V s s A V Ohm 0 0.75 1e-8 0 0 Infinite 0 no unit dimension 0.33
no unit dimension 0

All these parameters are used by SPICE to represent the different functions that govern behavior of the device in different situations. For example, base current in DC is calculated as: Ib = Junction surface *(Ibe1/BF + Ibe2 + Ibc1/BR + Ibc2), where BF e BR are known parameters, Ibe1 = Direct Diffusion Current = IS*(e^(Vbe/(NF*Vt)) - 1) Ibe2 = Base Emitter Current = ISE*(e^(Vbe/(NE*Vt)) - 1) Ibc1 = Inverse Diffusion Current = IS*(e^(Vbe/(NR*Vt)) - 1) Ibc2 = Base Collector Current = ISC*(e^(Vbe/(NC*Vt)) - 1) Similarly there are functions for the collector current , for the determination of the baseemitter capacitance, base-collector capacitance, and features that investigate the influence of temperature for different parameters. In this case we' ll model a BJT transistor, NPN type, the BC548A, from datasheet info. Unlike the diode in which we could obtain different data directly from datasheet and from semi-empirical rules, in this case we have few data that can be used directly, most of the parameters have to be extracted from datasheet graphs through the use of PSpice Model Editor tools.
We begin with the parameters that can be set to their default values without significant influence on the modeling. let's Assume XTI=3, EG=1.11 eV, XTB=0, TR=10ns, FC= 0.5. See below first pages of the datasheet for bc548a:
The only information we can use directly is essentially the maximum value of fT at 300Mhz, which allows us to estimate TF= 1/(6.28* 300 * 10^6)= 530 ps.Let's see other parameters obtained from the graphs of the datasheet.Open PSpice Model Editor and give a name to our model, choosing the type of BJT:
Pag. 2 of

look at the evolution of Vbe (sat) / Ic, with regard to the ratio Ic/Ib = 10, in the following chart:
let's edit couples of values in the first chart made available by PSpice Model Editor and click on Extract:
The result gives us the following curve:
Pag. 3 of 7

From this first curve we find IS and RB:
We obtain IS= 8.172 fA and RB=32.751,then we set these values and continue:
In the next graph, we must report the so-called output admittance:
After entering the data we obtain the graph:
Pag. 4 of 7

Then get VAF = 139.172:
We set the value found and continue with the next graph datasheet: hfe versus current collector:
Let's add couples of data taken from this chart, and after data extraction we obtain the following curve:
From this curve we can extract: BF=212.95, IKF= 208.44 mA, ISE = 65.20fA, NE = 1.37, NK = 0.839:
Pag. 5 of

Let's fix data and continue.Add data of Vce(sat) versus Ic:
and get BR=0.608, IKR=2.152, ISC= 13.68 fA, NC=1.80, e RC=0.86 Ohm:
as usual, fix the data and see capacitances graph:
input Cob data and get the curve:
extracted data are CJC = 3.968pF, VJC = 0.833V, MJC = 0.316:
input data for Cib and we get:
from which we derive CJE = 6.808pF, VJE = 1.319 V, MJE = 0.477:
Pag. 6 of

Let's check on Fixed to set the data.We have already estimated TF = 530ps. Then we can enter this value and fix it. Remain to be determined XTF, VTF, ITF. If we input data couples of values from the graphic:
We can see that the extraction of parameters leads to unreliable values because the graphic obtained is very far from the datasheet one:
Set XTF, VTF, ITF to their default values (10, 10, 1), we'll see that the curve starts to match datasheet curve:
With a few attempts, we can have a good correspondence with the curve of the gain with the following values:TF=670ps, XTF= 150, VTF = 10, ITF1 = 1:
finally, the model BC548A has the following expression: .model BC548A NPN( Is=8.172f Xti=3 Eg=1.11 Vaf=139.172 Bf=212.95 +Ise=62.50f + Ne=1.37 Ikf=208.44m Nk=.839 Xtb=0 Br=0.608 Isc=13.68f Nc=1.80 + Ikr=2.152 Rc=.86 Cjc=3.968p Mjc=.316 Vjc=.833 Fc=.5 + Cje=6.808p Mje=.477 Vje=1.319 Tr=10n Tf=670p Itf=1 Xtf=150 + Vtf=10) Pag. 7 of

BJT Model From Datasheet

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BJT model from Datasheet

1e-16 1.11 Infinite 0 Infinite

no unit dimension 3.0

no unit dimension 0.33

FC CJE MJE VJE TR TF ITF XTF VTF RB Pag. 1 of 7 1|2|>