,.&u"hashini 8% scholar ,oo)am"igai college of engineering Tamilnadu India (su"ha99::;gmail.

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D,(,C",D M+C45S"4+6 S"47C"74, 2AS,D 2A8D6ASS (+L",4

uncertainty of radiation effects the construction and careful evaluation of a prototype is strongly recommended. .n e$perienced designer may "e a"le to create a simplified model of the enclosure for more accurate simulation "ut measurement remains essential for verification. . lesser disadvantage is that D%& structures increase the area of the circuit. &lot on the strip that is called defected microstrip structure (D,&* ma)es a defect on the circuit which can "e used in designing filters. This defect creates resonance characteristics in the fre/uency response. This )ind of structures are constructed "y removing different shapes of patterns etched from the top conductor of microstrip and can "e used a low pass filter. The D,& is advantageous in high fre/uency and millimeter wave applications. 0owever D%& introduces wave lea)age through the ground plane which "rings difficulties with encapsulation.

Abstract A defected microstrip structure (DMS) unit is

proposed in this paper to perform bandpass filter. A G-shaped DMS act as a serious LC resonance circuit for certain frequency and suppress the spurious si nals thus actin as a lo!pass filter. "his defect creates resonance characteristics in the frequency response. "his #ind of structures are constructed by remo$in different shapes of patterns etched from the top conductor of microstrip Compared !ith con$entional "-shaped DMS% the proposed G-shaped DMS e&hibits lo!er resonant frequency and !ider stopband. Microstrip ap is a common discontinuity in planar structures. Circuit modelin of ap capacitances con$ert the microstrip line to a hi hpass transmission line. Cascadin of this microstrip ap !ith the G-shaped DMS results a bandpass filter. "he use of DMS allo!s an increase in slo! !a$e factor (S'() in the transmission lines in !hich they are introduced. "his phenomenon reduces the si)e of microstrip filter. A *D full !a$e simulations usin +,*D sho! operation for the frequency ran e -..G/) to 0..G/). "he insertion loss% return loss characteristics of the proposed filter is presented and ensure the $alidity of the filter. "he frequency ran e is suitable for satellite communication.

Index Terms 1Microstrip filter% 2andpass filter% Defected microstrip structure

I. INTRODUCTION The communication systems commonly employ filters in microwave and millimeter wave transceivers as channel separators. There is an increasing demand for low cost light weight and compact si!e filters. Thus planar filters utili!ing printed circuit technology seems very suita"le. #andpass filters are one of the most usa"le structures in microwave engineering. #andpass filters have found numerous applications in appro$imately all aspects of microwave engineering and communication technology. D%& is an etched periodic or non'periodic cascaded configuration defect in ground of a planar transmission line (e.g. microstrip coplanar and conductor "ac)ed coplanar wave guide* which distur"s the shield current distri"ution in the ground plane cause of the defect in the ground. This distur"ance will change characteristics of a transmission line such as line capacitance and inductance. In a word any defect etched in the ground plane of the microstrip can give rise to increasing effective capacitance and inductance. +, simulation is certainly accurate for the circuit itself "ut with
-

(i .3. Defected microstrip structure The novel defected microstrip structure (D,&* which consists of a rectangular slot of length l and width " etched in the middle of the center conductor and a small slot of width g perpendicular and in the center of the main slot is shown in 1igure 2 The width of the microstrip line is then 3 4 " 5 6c. &imilarly to D%& the D,& increases the electric length of microstrip and distur"s the current distri"ution. The effective capacitance and inductance of the microstrip line increase. .ccordingly a microstrip with a unit D,& has a stop'"and and slow'wave characteristics. Novel compact microwave components can "e designed "y using these characteristics. . %'shaped D,& is presented which performs a serious 7C resonance property in certain fre/uency and suppress the spurious signals thus acting as a lowpass filter. The microstrip gap adds capacitor to the transmission line. &ince series capacitors at two port networ) shows highpass filters the transmission line converts to filter that do not pass low fre/uencies. The idea of "andpass filter was developed "y cascading the microstrip gap to %'shaped D,&.

*.

II.D,& C0.R.CT+RICTIC& Defected ,icrostrip structures (D,&* have two main characteristics slow wave propagation in 8ass "and < #and &top Characteristics in microwave circuits A. Slow wave Propagation in Pass Band The D,& is considered as an e/uivalent circuit consisting of capacitance and inductance. The e/uivalent inductive part increases due to the defect and produces e/uivalently the high effective dielectric constant that is slow wave property due to this fact the D%& line has the longer electrical length than the standard ,icrostrip line for the same physical length. #y varying the various dimensions of the defect the desired resonance fre/uency can "e achieved. B.Band Stop Characteristics This e/uivalent circuit of the 8roposed D,& unit can e$plain the "and gap effect. The series inductance due to the D%& section increases the reactance of a microstrip with the increasing of the fre/uency. Thus the re=ection of the certain fre/uency range can "e started. The parallel capacitance with the series inductance provides the attenuation pole location which is the resonance fre/uency of the parallel 7C resonator. .s the operating fre/uency increases the reactance of the capacitance decreases. III. &I>+ R+DUCTION U&IN% D,& D,& presents a greater slowwave effect since it has more discontinuities providing a longer tra=ectory to the electromagnetic wave. &imultaneously D,& also performs a greater stop'"and "andwidth compared to spurline "oth having the same dimensions. The use of D,& allows an increase in the slowwave factor (&31* in transmission lines in which they are introduced. This phenomenon can "e used to reduce the si!e of passive planar circuits li)e microstrip line lengths coupling lines and microstrip antennas among other microstrip structures. I?. &7O3 3.?+ 1.CTOR IN ,ICRO&TRI8 7IN+ 3IT0 D+1+CT& The &31 is the relationship "etween the wave num"er in free space )@ and the propagation constant A of the transmission line. 1or loss less microstrip line the &31 is determined "y B

?. ,+T0OD TO R+DUC+ DI,+N&ION O1 ,ICRO&TRI8 CIRCUIT& To find the dimensions of the structure it is necessary to )now the electrical length introduced in a microstrip line when a D,& unit'cell (or several unit'cells* are employed. +very circuit "ased on transmission lines presents an electrical length and for microstrip lines the electricallength is given "yB

D4 Al4 C e ) @l

(E*

On the other hand these lines show a resonant fre/uency f r "y themselves. In many cases lines can "e seen as resonators and in this case for simplicity a F gGH line resonator is considered where Fg is the wavelength in the material either in an open' or short'circuited configuration. In the case of microstrip lines fr is given "y

fr 4

?@ HlC

(H*
@

where l 4 physical length of the lineI ? @ 4 speed of light in free space. 1or each line the respective resonant fre/uency must "e found and at that fre/uency the wave num"er in free space )@ is o"tained. The ne$t step is to propose a unitcell dimension (or a pattern of unit cells*. The structure can "e either a D%& or D,& JKL and this is introduced in the microstrip line and for such a configuration the electrical length D at fr is o"tained "y +, simulation. 1rom these results the &31 isB

&314 D(

M *) l 2:@ @

(K*

&314C A 4 Ce)@

(2*

3here Ce is the effective permittivity of the material and the propagation constant is determined "yB (6* 3here )@ is the wave num"er in free space .The &31 of a microstrip line is raised when a discontinuity is introduced in the path of the electromagnetic wave increasing the impedance of the line.

.fter introducing the unit'cell in the microstrip line the su"strate employed in the implementation presents an apparent effective dielectric constant C eff which is larger than the real effective dielectric constant C ref. This apparent permittivity provides the tool to e$plain how the dimensions of microstrip circuits can "e reduced which means that for a higher dielectric constant the wavelength is shorter as well as the microstrip circuits "oth "eing a function of this parameter. &ince the original microstrip lines have an electrical length and introducing a D,& unit'cell into the structure increases it a new dimension must "e found to )eep the electrical length e/ual to that of the non'defected lines JNL. The new length that gives the original electrical length for the microstrip line with D,& unit'cell is o"tained "y employing new techni/ue.

7c 4

?@ Hf r ( &31)

(9*

?I. ,ICRO&TRI8 %.8 . microstrip line can generally "e assumed as transmission line. transmission lines are low pass filters that their cutoff

fre/uencies are much higher than our common fre/uencies. This cutoff fre/uency is limited "y higher order modes. The microstrip gap adds capacitor to transmission line structure. &ince series capacitors at two port networ) shows high pass filters the transmission line converts to filter that do not pass low fre/uencies. Cut off fre/uency depends on gap distance. Using a simple analysis modeling gap with first order RC high pass filter the cut off fre/uency will "e

2 6MRC CC. 3here C4 @ r d fc 4

(O* 4 C@Cr

wt d

(i .*.,qui$alent circuit of the proposed G-shaped DMS

Cr'relative permittivity w'microstrip line width t'microstrip thic)ness Therefore increasing gap distance(d* lead to increase in cut off fre/uency and vice versa. ?II. %'&0.8+D D,& %'shaped D,& consists of one circular ring and one connecting slot in the microstrip line which seems li)e the letter %. Compared with the conventional D,& the proposed %'shaped D,& e$hi"its lower resonant fre/uency and wider stop"and. The desired fre/uency response can "e o"tained "y changing the %'cell dimensions and gap space at the "eginning of structure. 1igure 6 shows the %'shaped D,&.

?III.8RO8O&+D &TRUCTUR+ .ND IT& +PUI?.7+NT CIRCUIT The idea of "and pass filter was developed "y cascading a high pass filter(microstrip gap* to low pass filter(%'shaped D,&*. The proposed D,& is shown in figure H.

(i .:.6roposed structure The physical parameters of proposed structure is shown in ta"le.2 6/;S+CAL 6A4AM,",4S (i .9. G-shaped DMS +/uivalent circuit of the proposed %'shaped D,& is shown in 1igure E which is e/uivalent to a first order lowpass #utterworth prototype. Substrate 1RH

Relative permittivity QCrRS 7oss tangent Thic)ness of su"strate QtS 3idth of microstrip Q3S 7ength of the microstrip Q7S Inner radius of %'shaped D,& QrS Outer radius of %'shaped D,& QRS 0eight of the vertical slot QhS .rea of microstrip gaps QaS

H.K @.@@6 @.:mm Kmm Kmm 2.Nmm 6mm Hmm @.2mm

"able.3.6hysical parameters of proposed structure +/uivalent circuit of proposed "andpass filter is shown in figure K.

(i .0 <S'4 of proposed filter (i ...,qui$alent circuit of proposed structure 3e can o"tain e/uivalent capacitance in p1 and inductance in n0 of a low pass D,& using The electrical parameters of the proposed structure is shown in Ta"le 9.2 6A4AM,",4S <AL7,S &22 '2Kd# &62 'Ed# at 9.K%0! and O.K%0! #.ND3IDT0 2 %0! "able.9.,lectrical parameters of proposed structure The proposed filter structure will "e fa"ricated and compare e$perimental results with the simulated result. R+1+R+NC+&
J2L C. &. Vim W. &. 8ar) D. .hn and W. #. 7om . Novel 2'D 8eriodic Defected %round &tructure for 8lanar Circuitss I+++ ,icrow. 3ireless. Compon. 7ett. 6@@@ ?ol. 2@ No. H pp. 2E2'2EE. D. .hn W.&. 8ar) C.&. Vim X. Pian and T. Itoh Y. Design of the 7ow' pass 1ilter Using the Novel ,icrostrip Defected %round &tructure Z I+++ Transactions on ,icrowave Theory and Techni/ues ?ol. HN No. 2 Wanuary 6@@2 pp. :9'NE. 0. Cao 3. %uan &. 0e 7. Xang Compact lowpass filter with high selectivity using %'shaped Defected microstrip structure 8rogress In +lectromagnetics Research 7etters ?ol. EE KK'96 6@26 W.V. Uiao X.1. >hu and W. 1u YD%& 7owpass 1ilters +$tend 3ide &top"ands Z ,icrowaves < R1 ?ol. K@ No. E ,arch 6@22 pp. 99'O9. W.. Tirado',ende! and 0. Wardon'.guilar YComparison of Defected ground structure (D%&* and Defected microstrip structure (D,&* "ehavior at high fre/uencies Z 6@@H International conference on +lectrical and +lectronics +ngineering (IC++* Digest pp. O'2@. W.&. 7im C.0. Vim D. .hn X.C. Weong and &. Nam YDesign of 7ow'pass 1ilters Using Defected %rounded &tructure Z I+++ Transactions on ,icrowave Theory and Techni/ues ?ol. KE No. : .ugust 6@@K pp. 6KEN'6KHK. Vushwah ?.& I Tomar %.& &i!e Reduction of ,icrostrip 8atch .ntenna Using Defected ,icrostrip &tructures I+++ 6@22 international conference on Communication systems and Networ) technologies. Rumsey I.I 8i)et',ay ,.I Velly 8.V 8hotonic #and gap structures used as filters in microstrip circuits ,icrowave and guided wave letters Oct 2NN: &. R. 0osseini R. &arraf &hira!i and %h. ,oradi . Novel Defected ,icrostip &tructure (D,&* for ,icrostrip %aps 8I+R& 8roceedings Vuala 7umpur ,.7.X&I. ,arch 6O'E@ 6@26

C4( 74

Tc 2 *( 6 * >@g2 T@ ' Tc 6

(:*

2 HM 6f @6

(N*

0ere T@ and Tc denote resonant fre/uency and cut off fre/uency of the parallel 7C resonator. > @ is the characteristic impedance and g2 is the normali!ed parameter of first #utterworth lowpass protype.

J6L

IU. CONC7U&ION .ND 1UTUR+ 3ORV& The fre/uency response of proposed "andpass filter is o"tained as in figure 9 and the filter operates in the "andwidth of 2 %0! providing the pass"and "etween 9.K %0! and O.K %0!.
JEL

JHL JKL

J9L

JOL

J:L

JNL

(i .- S-parameter of proposed filter

The ?&3R of proposed filter is shown in figureO