Scribd Logo
Upload

Welcome to Scribd!

  • 70 views

    Excellent DC Characteristics of Hemts On Semi-Insulating Silicon Carbide Substrate

    Uploaded by

    rahil7860
    Researchers fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on semi-insulating silicon carbide substrates using metalorganic chemical vapor deposition. The 2.2 μm gate length HEMTs exhibited a record high transconductance of 287 mS/mm and high drain current density of 857 mA/mm. Due to the excellent thermal conductivity of the silicon carbide substrate, the devices showed minimal current decrease of only 2.8% when the drain bias increased from 10V to 20V, demonstrating reduced self-heating effects compared to similar devices fabricated on sapphire substrates. The HEMTs on silicon carbide are promising for high power and high frequency applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Excellent DC Characteristics of Hemts On Semi-Insulating Silicon Carbide Substrate

    Uploaded by

    rahil7860
    70 views2 pages
    Researchers fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on semi-insulating silicon carbide substrates using metalorganic chemical vapor deposition. The 2.2 μm gate length HEMTs exhibited a record high transconductance of 287 mS/mm and high drain current density of 857 mA/mm. Due to the excellent thermal conductivity of the silicon carbide substrate, the devices showed minimal current decrease of only 2.8% when the drain bias increased from 10V to 20V, demonstrating reduced self-heating effects compared to similar devices fabricated on sapphire substrates. The HEMTs on silicon carbide are promising for high power and high frequency applications.

    Original Description:

    Original Title

    rahil2

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Researchers fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on semi-insulating silicon carbide substrates using metalorganic chemical vapor deposition. The 2.2 μm gate length HEMTs exhibited a record high transconductance of 287 mS/mm and high drain current density of 857 mA/mm. Due to the excellent thermal conductivity of the silicon carbide substrate, the devices showed minimal current decrease of only 2.8% when the drain bias increased from 10V to 20V, demonstrating reduced self-heating effects compared to similar devices fabricated on sapphire substrates. The HEMTs on silicon carbide are promising for high power and high frequency applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    70 views2 pages

    Excellent DC Characteristics of Hemts On Semi-Insulating Silicon Carbide Substrate

    Uploaded by

    rahil7860
    Researchers fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on semi-insulating silicon carbide substrates using metalorganic chemical vapor deposition. The 2.2 μm gate length HEMTs exhibited a record high transconductance of 287 mS/mm and high drain current density of 857 mA/mm. Due to the excellent thermal conductivity of the silicon carbide substrate, the devices showed minimal current decrease of only 2.8% when the drain bias increased from 10V to 20V, demonstrating reduced self-heating effects compared to similar devices fabricated on sapphire substrates. The HEMTs on silicon carbide are promising for high power and high frequency applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

    S.Arulkumaran, T. Egawa, G. Zhao, H. Ishikawa and M.Umeno Research Center for Micro-structure Devices, Nagoya Institute of Technology, Gokiso-cho, showa-ku, Nagoya 466-8555, Japan. Fax: +81-52-735-5546, e-mail: arul001 @vahoo.com
    Abstract: The epitaxial layers of Al,,,,Ga,,,,N/GaN were grown by MOCVD with a good

    uniformity and carrier mobility of 1281 cmzNs at room temperature. High electron mobility transistor (HEMT) have been fabricated using AlGaNIGaN heterostructure on semi-insulating silicon carbide substrate. The fabricated 2 . 2 gate ~ length Al,,26Ga,, ,4N/GaN HEMTs exhibited high transconductance 287 mS/mm with high drain current density 857 mA/mm. HEMTs. The Al, ,,Ga, ,,/GaN layers were grown by atmospheric pressure MOCVD on This is the first report with highest transconductance so far achieved for 2.2pm gate length AlGaN/GaN

    (0001)-oriented semi-insulating 4H-Sic substrates using the following growth conditions. The
    device structure consists of 3 nm un-doped AlGaN barrier layer, 15 nm silicon doped AlGaN supply layer, 7 nm un-doped AlGaN spacer layer. 3000 nm insulating GaN (i-GaN) layer and a 200 nm AlN buffer on top of the S i c substrate. Aluminium content of the all AlGaN layers was 26%. The device isolation was accomplished by mesa dry etching down to the i-GaN by BC1, plasma reactive ion etching. The ohmic contact was performed by the deposition of a Ti/Al/Ti/Au (25/100/45/55 nm), which was subsequently alloyed at 770 O C for 60 s in N, atmosphere. The gate metals of Pd/Ti/Au (40/40/80 nm) were performed optically defined 2.2 pm, 3.0 pm and 5

    vm long gates using optical lithography through conventional lift-off method. The DC
    characteristics were measured in dark using HP4 145B semiconductor analyser. Good I,,-V,, characteristics (Figure 1) of a 2.2 p gate length and 15 pm gate width

    HEMT, yielding a maximum current density of 867 mA/mm and a record extrinsic
    transconductance of 287 mS/mm for the gate voltage of 0.2 V. From the transfer characteristics (figure 2), the observed maximum drain-source current density is 1100 mA/mm for the gate and drain voltage of 3.8 and 10 V. The I-V characteristic is noteworthy for its minimal current decrease at large dissipation levels due to self-heating. Owing to the excellent thermal conductivity of the S i c substrate, the current density decreases during the sweep (857 mA/mm to
    833 mA/mm) by only 2.8 % when the drain bias is increases to 20 V.

    The self-heating effect is

    high for sapphire based device structures. In summary, we have demonstrated for the first time, high transconductance
    91

    Al,,,,Ga,,,,N/GaN based 2.2pm gate HEMTs with good I-V characteristics grown on semi-insulating S i c substrates. These HEMTs exhibited a high transconductance and drain current density of 287 mS/mm and 857 mA/mm, respectively. The fabricated high transconductance AlGaN/GaN HEMTs on semi-insulating S i c substrates will be very much suitable for high power and high frequency applications.

    loo0

    t
    I

    I
    I l l AIGaNIGaN on SCSiC
    I l l

    LgxWg=2.2~15 p n

    / 7
    +OSV

    +l.OV

    -1.ov -1SV -2.ov 10


    vDS

    15 (v)

    2 0

    25
    4

    -3

    -2

    -1

    V G S (v)

    Figure 1. IDs-Vmcharacteristics of HEMT for Lg/Wg=2.2/15 pm. V,, is + I .5 to


    -3.0 V in steps of 0.5 V.

    Figure 2. Transfer characteristics of HEMT for


    Lg/Wg=2.2/15 pm.V,, is 2 to IO V
    in steps of 2 V.

    92

    You might also like