SM-8 BIPOLAR TRANSISTOR H-BRIDGE

ZHB6718

PRELIMINARY DATA SHEET ISSUE B - JULY 1997

FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 20V supply
* 2.5 Amp continuous rating
SM-8
(8 LEAD SOT223)

PARTMARKING DETAIL ZHB6718

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

NPNs

PNPs

UNIT

Collector-Base Voltage

VCBO

20

-20

Collector-Emitter Voltage

VCEO

20

-20

Emitter-Base Voltage

VEBO

-5

Peak Pulse Current

ICM

Continuous Collector Current

IC

-6

2.5

-2.5

Operating and Storage Temperature Range Tj:Tstg

-55 to +150

CONNECTION DIAGRAM

SCHEMATIC DIAGRAM

C3, C4
Q2

Q3

E2, E3

B3

4
3

B2

B4

C1, C2

B2

C3,C4

B1
E2,E3

B4

Q4

Q1

E1,E4

B1

C1,C2

E1, E4

B3

ZHB6718
THERMAL CHARACTERISTICS
PARAMETER

SYMBOL

Total Power Dissipation at Tamb = 25C*

Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally

Ptot

Derate above 25C*

Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally

100

tP

W
W

10
16

mW/ C
mW/ C

100
62.5

C/ W
C/ W

tP

40
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse

40
20

1ms

1.25
2

10ms 100ms

1s

10s

Pulse Width

100s

30
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse

20
10
0
100us

1ms

10ms 100ms

1s

Pulse Width

10s

100s

Transient Thermal Resistance

Q1 and Q3 or Q2 and Q4 "On"

Transient Thermal Resistance

Single Transistor "On"
2.0

D=t1
tP

t1

50

60

0
100us

UNIT

60

D=t1
tP

t1

80

Rth(j-amb)

VALUE

10

1.5
Two devices on
Full Copper

1.0

Minimum Copper

Single device on
Two devices on
Single device on

0.5
0

20

40

60

80

100

120

T - Temperature (C)

Derating curve

140 160

0.1

0.1

Pcb Area (inches squared)

10

Pd v PCB Area Comparison

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs
turned on.

ZHB6718
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25C ).
PARAMETER

SYMBOL

Collector-Base
Breakdown Voltage

V(BR)CBO

20

100

IC=100A

Collector-Emitter
Breakdown Voltage

V(BR)CEO

20

27

IC=10mA*

8.3

IE=100A

Emitter-Base Breakdown V(BR)EBO

Voltage
Collector Cut-Off Current

MIN.

TYP.

MAX. UNIT

CONDITIONS.

ICBO

100

nA

VCB=16V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Collector Emitter Cut-Off

Current

ICES

100

nA

VCES=16V

Collector-Emitter
Saturation Voltage

VCE(sat)

8
70
130

15
150
200

mV
mV
mV

IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=2.5A, IB=50mA*

Base-Emitter
Saturation Voltage

VBE(sat)

0.89

1.0

IC=2.5A, IB=50mA*

Base-Emitter Turn-On
Voltage

VBE(on)

0.79

IC=2.5A, VCE=2V*

Static Forward Current

Transfer
Ratio

hFE

200
300
200

400
450
360
180

Transition
Frequency

fT

100

140

IC=10mA, VCE=2V*
IC=100mA, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
MHz

IC=50mA, VCE=10V
f=100MHz

Output Capacitance

Cobo

23

pF

VCB=10V, f=1MHz

Turn-On Time

t(on)

170

ns

Turn-Off Time

t(off)

400

ns

VCC=10V, IC=1A
IB1=-IB2=10mA

30

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%.

ZHB6718
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25C ).
PARAMETER

SYMBOL

Collector-Base
Breakdown Voltage

V(BR)CBO

-20

-65

IC=-100A

Collector-Emitter
Breakdown Voltage

V(BR)CEO

-20

-55

IC=-10mA*

-5

-8.8

IE=-100A

Emitter-Base Breakdown V(BR)EBO

Voltage

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector Cut-Off Current

ICBO

-100

nA

VCB=-15V

Emitter Cut-Off Current

IEBO

-100

nA

VEB=-4V

Collector Emitter Cut-Off

Current

ICES

-100

nA

VCES=-15V

Collector-Emitter
Saturation Voltage

VCE(sat)

-16
-130
-190

-40
-200
-260

mV
mV
mV

IC=-100mA, IB=-10mA*
IC=-1A, IB=-20mA*
IC=-2.5A, IB=-200mA*

Base-Emitter
Saturation Voltage

VBE(sat)

-0.98

-1.1

IC=-2.5A, IB=-200mA*

Base-Emitter Turn-On
Voltage

VBE(on)

0.85

IC=-2.5A, VCE=-2V*

Static Forward Current

Transfer
Ratio

hFE

300
300
150
35

475
450
230
70
30

Transition
Frequency

fT

150

180

IC=-10mA, VCE=-2V*
IC=-100mA, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-4A, VCE=-2V*
IC=-6A, VCE=-2V*
MHz

IC=-50mA, VCE=-10V
f=100MHz

Output Capacitance

Cobo

21

pF

VCB=-10V, f=1MHz

Turn-On Time

t(on)

40

ns

Turn-Off Time

t(off)

670

ns

VCC=-10V, IC=-1A
IB1=IB2=-20mA

30

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%.

ZHB6718
NPN TRANSISTOR
TYPICAL CHARACTERISTICS
1

0.4

+25 C

IC/IB=50

0.3

100m

100C
25C

0.2
10m

IC/IB=100
IC/IB=50
IC/IB=10

1m
1m

1.2

10m

100m

0.6
0.4

0.1

10

0.0
1mA

10mA

100mA

IC - Collector Current (A)

Collector Current

VCE(sat) v IC

VCE(sat) vs IC
1.2

VCE=2V

100C

450

1.0
0.8

-55C

225

1A

10A

IC/IB=50

0.6
-55C

10A

1.0
0.8

25C

1A

-55C
25C
100C

0.4
0.2

0.2
0.0
10mA

1mA

100mA

1A

0
10A

Collector Current

-55C
25C

0.6

100C

0.4
0.2
0.0
1mA

10mA

100mA

Collector Current

VBE(on) vs IC

100mA

VBE(sat) vs IC

VCE=2V

0.8

10mA

Collector Current

hFE vs IC

1.0

0.0
1mA

1A

10A

ZHB6718

PNP TRANSISTOR
TYPICAL CHARACTERISTICS
1

0.6

+25C

IC/IB=30

0.5
100m

0.4
0.3

10m

1m
1m

100m

25C
-55C

0.1
0.0

10m

100C

0.2

IC/IB=50
IC/IB=30
IC/IB=10

10

1mA

IC - Collector Current (A)

1.2

100C

VCE=2V

1.4

10A

1A

10A

IC/IB=10

1.2

25C

450

1.0
0.8

0.8
-55C

225

0.4

0.6

-55C
25C
100C

0.4
0.2

0.2
0.0
1mA

1.2

1A

VCE(sat) vs IC

1.0

0.6

100mA

Collector Current

VCE(sat) v IC

1.4

10mA

10mA

100mA

0
10A

1A

10mA

100mA

Collector Current

Collector Current

hFE vs IC

VBE(sat) vs IC

VCE=2V

1.0
-55C

0.8

25C

0.6

100C

0.4
0.2
0.0
1mA

0.0
1mA

10mA

100mA

Collector Current

VBE(on) vs IC

1A

10A

ZHB6718
SAFE OPERATING AREA
10

10

DC
1s
100ms
10ms
1ms
100s

100m

10m
100m

100m

10

VCE - Collector Emitter Voltage (V)

100

Safe Operating Area (Full Copper)

see note below

10m
100m

DC
1s
100ms
10ms
1ms
100s

10

VCE - Collector Emitter Voltage (V)

100

Safe Operating Area (Minimum Copper)

see note below

Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary
breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the
power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when
mounted on a 50mm x 50mm FR4 PCB. The two cases show:
i) full copper present and
ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to
the edge of the PCB.
For example, on a 50mm x 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under
DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can
be tolerated for pulsed operation, while the shorter pulse widths (100s and 1ms) being relevant
for assessment of switching conditions.
The ZHB6718 H-Bridge can be modelled within SPICE using the following transistor models
configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet.
*ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97
.MODEL H6718N NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF =0.95E-9 TR =2.25E-9
*
*
*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97
.MODEL H6718P PNP IS =6.8E-13 BF =480 IKF =2 VAF =23
+ ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04
+ RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9
+TR =23.7E-9
*
(C) 1997 ZETEX PLC
The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact (including
this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no
condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect
of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,
Oldham OL9 8NP, UK.

ZHB6718
He

e1

e2

A1

45

c
Lp

Dim

Millimetres

Inches

Min

Typ

Max

Min

Typ

Max

1.7

0.067

A1

0.02

0.1

0.0008

0.004

0.7

0.028

0.24

0.32

0.009

0.013

6.3

6.7

0.248

0.264

3.3

3.7

0.130

0.145

e1

4.59

0.180

e2

1.53

0.060

He

6.7

7.3

0.264

0.287

Lp

0.9

0.035

15

15

10

10

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
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Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49

Zetex Inc.
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Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630

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Telephone:(852) 26100 611
Fax: (852) 24250 494

These are supported by

agents and distributors in
major countries world-wide
Zetex plc 1997
Internet:
http://www.zetex.com

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or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
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