2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
ADE-208-1244 (Z)1st. EditionMar. 2001
Application
Low frequency power amplifierComplementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
•
Good frequency characteristic
•
High speed switching
•
Wide area of safe operation
•
Enhancement-mode
•
Good complementary characteristics
•
Equipped with gate protection diodes
•
Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
2
Outline
123TO-3P1. Gate2. Source (Flange)3. DrainDGS
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage2SK1056V
DSX
120V2SK10571402SK1058160Gate to source voltageV
GSS
±15VDrain currentI
D
7ABody to drain diode reverse drain currentI
DR
7AChannel dissipationPch*
1
100WChannel temperatureTch150°CStorage temperatureTstg–55 to +150°CNote:1.Value at T
C
= 25°C
2SK1056, 2SK1057, 2SK1058
3
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source2SK1056V
(BR)DSX
120——VI
D
= 10 mA, V
GS
= –10 Vbreakdown voltage2SK10571402SK1058160Gate to source breakdownvoltageV
(BR)GSS
±15——VI
G
= ±100 µA, V
DS
= 0Gate to source cutoff voltageV
GS(off)
0.15—1.45VI
D
= 100 mA, V
DS
= 10 VDrain to source saturationvoltageV
DS(sat)
——12VI
D
= 7 A, V
GD
= 0 *
1
Forward transfer admittance|yfs|0.71.01.4SI
D
= 3 A, V
DS
= 10 V *
1
Input capacitanceCiss—600—pFV
GS
= –5 V, V
DS
= 10 V,Output capacitanceCoss—350—pFf = 1 MHzReverse transfer capacitanceCrss—10—pFTurn-on timet
on
—180—nsV
DD
= 20 V, I
D
= 4 A,Turn-off timet
off
—60—nsNote:1.Pulse test
2SK1056, 2SK1057, 2SK1058
4
501000Case Temperature T
C
(°C)150
50
C h a n n e l D i s s i p a t i o n P c h ( W )
Power vs. Temperature Derating100150Maximum Safe Operation Area
D r a i n C u r r e n t I
D
( A )
1020501.0251001020Drain to Source Voltage V
DS
(V)55000.52000.2I
D
max
(Continuous)Ta = 25°C
P W = 1 0 m s 1 s h o t
P W = 1 0 0 m s 1 s h o t P W = 1 s 1 s h o t D C O p e r a t i o n ( T
C
= 2 5 ° C )
2SK10562SK10572SK1058Typical Output Characteristics30Drain to Source Voltage V
DS
(V)40201050
D r a i n C u r r e n t I
D
( A )
02468010V
GS
= 10 VT
C
= 25°C12056789
P c h = 1 0 0 W
34Typical Transfer Characteristics1.2Gate to Source Voltage V
GS
(V)1.60.80.402.0
0.20.40.60.81.00
D r a i n C u r r e n t I
D
( A )
T
C
= – 2 5 ° C
7 5
V
DS
= 10 V
2 5