This set of Power Electronics Multiple Choice Questions & Answers (MCQs) focuses

on IGBTs-1.
1. IGBT possess
a) low input impedance
b) high input impedance
c) high on-state resistance
d) second breakdown problems
View Answer
Answer: b
Explanation: Like MOSFET IGBT possess high input impedance.
2. IGBT & BJT both posses ___
a) low on-state power losses
b) high on-state power losses
c) low switching losses
d) high input impedance
View Answer
Answer: a
Explanation: Low on state power loss is one of the best parameters of both BJT &
the IGBT.
3. The three terminals of the IGBT are
a) base, emitter & collector
b) gate, source & drain
c) gate, emitter & collector
d) base, source & drain
View Answer
Answer: c
Explanation: IGBT is a three terminal device. It has a gate, a emitter & a collector.
4. In IGBT, the p+ layer connected to the collector terminal is called as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer
View Answer
Answer: b
Explanation: It is called as a injection layer, because it injects holes into the n - layer.
5. The controlling parameter in IGBT is the
a) IG
b) VGE

c) IC
d) VCE
View Answer
Answer: b
Explanation: The controlling parameter is the gate to emitter voltage, as the device
is a voltage controlled device.
6. In IGBT, the n- layer above the p+ layer is called as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer
View Answer
Answer: a
Explanation: It is called as the drift layer because its thickness determines the
voltage blocking capabilities of the device.
7. The voltage blocking capability of the IGBT is determined by the
a) injection layer
b) body layer
c) metal used for the contacts
d) drift layer
View Answer
Answer: d
Explanation: The drift layer which is a n - layer determines the voltage blocking
capabilities.
8. The controlled parameter in IGBT is the
a) IG
b) VGE
c) IC
d) VCE
View Answer
Answer: c
Explanation: The controlling parameter is the gate to collector current.
9. The structure of the IGBT is a
a) P-N-P structure connected by a MOS gate
b) N-N-P-P structure connected by a MOS gate
c) P-N-P-N structure connected by a MOS gate
d) N-P-N-P structure connected by a MOS gate
View Answer

Answer: c
Explanation: The IGBT is a semiconductor device with four alternating layers (P-N-PN) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without
regenerative action.
10. The major drawback of the first generation IGBTs was that, they had
a) latch-up problems
b) noise & secondary breakdown problems
c) sluggish operation
d) latch-up & secondary breakdown problems
View Answer
Answer: d
Explanation: The earlier IGBTs had latch-up problems (device cannot turn off even
after the gate signal is removed), and secondary breakdown problems (in which a
localized hotspot in the device goes into thermal runaway and burns the device out
at high currents).

[3] To turn off a SCR, the reverse bias should be applied for a period ....... the turnoff time of the SCR
(a) Equal to
(b) Longer than
(c) Less than
(d) Irrespective of
Answer: B
[4] In class A and class B commutation the resonating circuit has to be
(a) Over damped
(b) Critically damped
(c) Under damped
(d) Negatively damped
Answer: C
[5] In phase controlled rectification power factor (PF)
(a) Remains unaffected
(b) Improves with increase of firing angle
(c) Deteriorates with increase of
(d) Is unrelated to
Answer: C
[6] Comparing with the full wave rectifier using two diodes, the four diode bridge

rectifier has the dominant advantage of

(a) Higher current carrying
(b) Lower peak inverse voltage requirement
(c) Lower ripple factor
(d) Higher efficiency
Answer: B
[7] A SCR is rated at 75A peak, 20A average. The greatest possible delay in the
trigger angle if the dc is at rated value is
(a) 47.5
(b) 30 to 45
(c) 74.5
(d) 137
Answer: B
[8] The applied sine voltage to a SCR is VM=200V and R=10Ohm. If the gate trigger
lags the ac supply by 120, the average load current is
(a) 15/ A
(b) 5/ A
(c) -5/ A
(d) -15/ A
Answer: A
[9] A sine voltage of 200Vrms, 50Hz is applied to an SCR through 100ohm resistor.
The firing angle is 60. Consider no voltage drop. The output voltage in rms is
(a) 89.7 V
(b) 126.7 V
(c) 166.7 V
(d) 2002 V
Answer: B
[10] A 100VDC is applied to the inductive load through a SCR. The SCR's specified
latching current is 100mA. The minimum required width of gating pulse to turn on
the SCR is
(a) 100S
(b) 100S
(c) 1mS
(d) 50S
Answer: A
[11] A cycloconverter is a
(a) Frequency changer from higher to lower frequency with one-state conversion
(b) Frequency changer from higher to lower frequency with two-stage conversion
(c) Frequency changer from lower to higher frequency with one-stage conversion

(d) Either a or c
Answer: D
[12] The cycloconverter require natural or forced commutation as under
(a) Natural commutationin bothstep-up and step down cycloconverter
(b) Forced commutation in both step-up and step-down cycloconverter
(c) Forced commutation in step-up cycloconverter
(d) Forced commutation in step-down cycloconverter
Answer: C
[13] In synchronized UJT triggering of an SCR, voltage VC across capacitor reaches
UJT threshold thrice in each half cycle so that there are three firing pulses during
each half cycle. The firing angle of the SCR can be controlled
(a) Once in each half cycle
(b) Thrice in each half cycle
(c) Twice in each half cycle
(d) Four times in each half cycle
(e) None of the above
Answer: A
[14] In a GTO, anode current begins to fall when gate current
(a) Is negative peak at time t=0
(b) Is negative peak at t = storage period tS
(c) Just begins to become negative at t = 0
(d) Is negative peak at t = (tS + fall time)
Answer: B
[15] The SCR can be turned on by
(a) Applying anode voltage at a sufficiently fast rate
(b) Applying sufficiently large anode voltage
(c) Increasing the temperature of SCR to a sufficiently large value
(d) Applying sufficiently large gate current
OPTIONS:
1) A, B
2) C, D
3) B, C
4) A, B, C, D
5) None of the above options
Answer: 4

Solution Hint:

[2] VL= V[(Ton/(Ton+Toff)]

=V. f .Ton
There are two ways to vary VL. Either by varying f or Ton. Here f is fixed and Ton is
varied. As the frequency is kept constant ripple remains constant.

[6] The PIV of diodes used in the full wave rectifier using two diodes is 2 times that
of the four diode bridge rectifier

[7] RMS Current/ Average Current = Form Factor

[8] Idc = [Vm/2R](1+cos)

= delay angle

[15] a= dv/dt triggering, b = forward voltage triggering, c= temperature triggering,

d = gate triggering. So all are correct
1. Which following is a two terminal three layer device?
1.

BJT.

2.

Power dioed.

3.

MOSFET.

4.

None of above.

2. Depending upon the switching recovery time and on state drop, the power
diodes are types

1.

General purpose, fast recovery.

2.

Fast recovery, Schottky.

3.

General purpose, fast recovery and schottly.

4.

None of these.

3. The trapped energy of an inductive load can be feed back to the input supply
through a diode known as
1.

Zener diode.

2.

Feed back diode.

3.

Powe diode.

4.

None of these.

4. Which of following is not a power transistor?

1.

IGBTs.

2.

COOLMOS.

3.

TRIAC.

4.

SITS.

5. Which of following is normally ON device

1.

SIT.

2.

BJT.

3.

TRIAC.

4.

IGBT.

6. A schottky device is a
1.

Fast recovery device.

2.

Minority carrier device.

3.

Majority carrier device.

4.

Both B and C.

7. Power transistor are type of

1.

BJTs.

2.

MOSFETs.

3.

IGBTs.

4.

All of above.

8. Which of the following is true?

1.

SIT is a high power, high frequency device.

2.

SIT is a high power, low frequency device.

3.

SIT is a high power, high voltage device.

4.

SIT is a low power, high frequency device.

9. Optocouplers combine
1.

IGBTs and MOSFETs.

2.

SITs and BJTs.

3.

Power transistor and silicon transistor.

4.

Infrared light emitting diode and a silicon photo transistor.

10.A GTO can be turned on by applying

1.

Positive gate signal.

2.

Positive drain signal.

3.

Positive source signal.

4.

None of these.

11.SITH is also known as

1.

Filled controlled diode.

2.

Filled controlled rectifier.

3.

Silicon controlled rectifier.

4.

None of these.

12.The reverse recovery time of diode is trr = 3 s and the rate off all of the
diode current is di/dt = 30 A/s. The storage charge current Q RR is
1.

130 s.

2.

135 s.

3.

140 s.

4.

145 s.

13.The turn-on time of a SCR with inductive load is 20 s. The puls train
frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will

1.

Turn on.

2.

Not turn on.

3.

Turn on if inductance is removed.

4.

Turn on if pulse frequency us increased to two times.

14.Single phase, 230 V, 1 KW heater is connected acrose single phase 230 V, 50

Hz supply through a diode. The power delivered to the heater element
1.

100 W.

2.

1000 W.

3.

500 W.

4.

None of above.

15.For a diode, reverse recovery time is defined as the time between the instant
diode current becomes zero and the instant reverse recovery current decays
to
1.

0.

2.

10% of reverse peak current.

3.

25% of reverse peak current.

4.

15% of reverse peak current.

16.Reverse recovery current in a diode depends upon

1.

PIV.

2.

Temperature.

3.

Storage change.

4.

Forward field current.

17.The softness factor for soft recovery and fast recovery diodes are respectively
1.

1, 1.

2.

1, >1.

3.

<1, 1.

4.

1, <1.

18.A power MOSFET has three terminals called

1.

Collector, emitter and gate.

2.

Drain, source and gate.

3.

Drain, source and base.

4.

Collector, emitter and base.

19.A modern power semiconductor device that combines the characteristic of

BJT and MOSFET is
1.

IGBT.

2.

FCT.

3.

MCT.

4.

GTO.

1. An IGBT has three terminals called:

a) Collector, Emitter and Base
b) Drain, Source and Base
c) Drain, Source and Gate
d) Collector, Emitter and Gate

2. The function of snubber circuit connected across the SCR is to:

a) Suppress dv/dt
b) Increase dv/dt
c) Decrease dv/dt
d) Decrease di/dt

3. An UJT exhibits negative resistance region:

a) Before the break point

b) Between peak and valley point

c) After the valley point
d) Both (a) and (c)

4. For dynamic equalizing circuit used for series connected SCRs, the choice of C is
based on:
a) Reverse recovery characteristics
b) Turn-on characteristics
c) Turn-off characteristics
d) Rise time characteristics

5. A four quadrant operation require:

a) Two full converters in series
b) Two full converters connected back to back
c) Two full converters connected in parallel
d) Two semi conductors connected back to back

6. In a circulating-current type of dual converter, the nature of the voltage across

the reactor is:
a) Alternating
b) Pulsating
c) Direct
d) Triangular

7. The frequency of the ripple in the output voltage of 3-phase semiconductor

depends on:
a) Firing angle and load resistance
b) Firing angle and load inductance
c) The load circuit parameters
d) Firing angle and the supply frequency

8. A single-phase full bridge inverter can operate in load-commutation mode in case

load consists of:
a) RL load
b) RLC underdamped
c) RLC damped
d) RLC critically damped

9. Practical way of obtaining static voltage equalization in series connected SCRs is

by the use of:
a) One resistor across the string
b) Resistors of different values across each SCR
c) Resistors of the same value across each SCR
d) One resistor in series with each SCR

10. A resistor connected across the gate and cathode of an SCR in a circuit
increases its
a) dv/dt rating
b) Holding current
c) Noise Immunity
d) Turn-off time