Chapter 2 Bipolar Junction Transistor
Chapter 2 Bipolar Junction Transistor
Chapter 2 Bipolar Junction Transistor
Figure 2.1: Inventors of transistor John Bardeen, William Shockley, and Walter Brattain
(left to right)
Figure 2.2 shows the picture of first transistor made by three mentioned
inventors.
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Transistors both bipolar and field effect type, are a three terminal semiconductor
device used primarily for signal amplification and switching. It is also formed
the fundamental element for integrated circuit design such as the VLSI
microprocessor.
Bipolar junction transistor can be divided into two types namely npn and
pnp.
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Field effect transistor FET may be broadly divided into JFET, MESFET,
MODFET, and MOSFET, where MOSFET can further be divided into
depletion-enhancement type and enhancement type. In today's VLSI design,
complimentary MOSFETs are used to reduce power consumption and fast
switching application.
Figure 2.9: Energy band diagram of pnp transistor under voltage bias
There are three current types flowing in bipolar junction transistor. There are
collector current IC, emitter current IE, and and base current IB.
By Kirchhoff's Current Law KCL,
IE = IB + IC
(2.1)
There is a small portion of the injected carrier recombines with majority carrier
in the base to form part of the base current. Thus, the emitter current IE is equal
to (IC + IB).
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(2.2)
The typical value of ranges from from 0.95 to 0.99. For a good transistor, its
value is closed to one.
The ratio of collector current to base current is , which also denoted as hparameter-hFE. This parameter is commonly known as common emitter gain.
= IC/IB
(2.3)
(2.4)
(2.5)
Example 2.1
A transistor has IB = 0.08mA and IE = 9.60mA. Determine its collector current
IC, , and .
Solution
IC = IE - IB
= 9.60mA - 0.08mA
= 9.52mA
= 9.52mA/9.60mA= 0.9917
= 9.52mA/0.08mA = 119
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or
= /(1-) = 0.9917/0.0083 = 119
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Figure 2.12 shows the set up to measure ICEO current with base open i.e. IC =
ICEO.
Taking into account ICEO and ICBO, the real (real) and (real) parameters shall be
re-calculated.
Figure 2.13: It illustrates the ICBO and ICEO leakage current components
Since =
IC = IC(real) +ICBO
(2.6)
(real) = (IC-ICBO)/IE
(2.7)
IC = (real)IE + ICBO
(2.8)
IB = IE-((real)IE + ICBO)
(2.9)
,
+1
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(2.10)
I C I CBO
I B + I CBO
(2.11)
IC = (real)IB +ICBO(+1)
(2.12)
IB =
(real) =
(2.13)
(2.14)
Note that ICEO value in equation (2.14) is indeed the cutoff base current of a
bipolar junction transistor.
Example 2.2
A silicon bipolar junction transistor has = 100 and ICBO of 0.01A. Calculate
the value of , IC and IB assuming IE = 1mA.
Solution
=
100
=
= 0.99
+ 1 101
IC = IE + ICBO
= 0.99(1mA) + 0.01A
= 0.99001 mA
IB =
IE
- ICBO
+1
IB, a new collector characteristic curve can be obtained by varying the collectorto-emitter voltage VCE and measuring the collector current IC.
When base current is zero i.e. IB = 0, the transistor is said to be at cutoff.
When base current is increased, the collector current IC is also increased, and
collector-to-emitter voltage VCE is decreased. VCE will decrese until it is equal to
VCE(sat), which is approxiamtely equal to 0.1 ~ 0.2V. At this condition, the
transistor is saturated because IC will not increase any further and base-tocollector junction becomes forward bias (equation (2.19); VCB = VCE - VBE). In
this condition, the current gain formula will not follow.
Note also that at cutoff, VCE is almost equal to VCC and likewise at
saturation, collector-to-emitter voltage is almost zero. i.e.VCE 0V.
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The current gain of this configuration is , which is the ratio of collector current
IC and base current IB. is also called as static forward transfer current ratio
hfe. The input is at base terminal, whilst the output is at collector terminal.
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2.2.2.1 dc Analysis
Reference to common-emitter configuration shown Fig. 2.17, there are three
currents and three voltages, which are base current IB, emitter current IE,
collector current IC, base-to-emitter voltage VBE, collector-to-base voltage VCB,
and collector-to-emitter voltage VCE. For any other dc biasing configuration,
there always have these currents and voltages.
VR B = VBB-VBE
(2.15)
VBB VBE
RB
(2.16)
Knowing the beta value, using equation (2.2) and (2.3), collector current IC and
emitter current IE can be determined.
The voltage drop across collector resistor RC is VR , which is
C
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(2.17)
The voltage drop across collector and emitter VCE shall then equal to
VCE = VCC - ICRC
(2.18)
The voltage drops across collector and base shall follow equation (2.19), which
is
VCB = VCE - VBE
(2.19)
Example 2.3
Determine if the transistor shown in circuit is in saturation. Assume that VCE(Sat)
is small enough to be neglected.
Solution
The collector saturation current is I C (sat ) =
enough
to
produce
IC(sat)
V 0.7 V 2.3V
I B = BB
=
= 0.23mA .
RB
10k
then
RC
the
10V
= 10mA . If IB is large
1k
base
current
IB
is
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The current gain is +1 since I E = I C + I B . This shall mean that emitter current is
IE = IB( + 1). The input is at base terminal, whilst the output is at emitter
terminal.
2.2.3.1 dc Analysis
The current and voltage shown in Fig. 2.19 depend on the transistor
characteristics and external circuit values.
The voltage at base is VBB. The voltage at emitter VE is (VBB-VBE), where VBE =
0.7V for silicon at room temperature. Thus, the emitter current IE is
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VE
RE
(2.20)
IE =
VBB VBE
RE
(2.21)
IE
+1
(2.22)
(2.23)
(2.24)
Example 2.4
Determine current IB, IC, IE and voltage at each transistor terminal with respect
to ground and VCE voltage in the figure. = 200.
Solution
Emitter current is I E =
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IC = IE
IB =
= 0.925mA
+1
IE
0.93mA
=
= 4.43A
+1
201
below the Q-point. The collector current IC will vary between 20.0mA to
40.0mA, which is 10.0mA above and below Q-point of 30.0mA. The
collector-to-emitter voltage VCE will vary from 2.0V to 6.0V as shown in Fig.
2.22, which is 2.0V above and below Q-point of 4.0V.
Example 2.5
Determine the Q-point for circuit shown in the figure and the peak value of base
current for linear operation. Given that the beta value of the npn transistor is
200.
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Solution
Q-point is defined by collector current IC and collector-to-emitter voltage VCE
on the output characteristic curve. The base current is
IB =
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From the graph, the operating IC range is 37.2mA 29.5mA. Thus, the
peak base current IB value is Ib(peak) = 29.5mA/200 = 147.5A.
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2.4.1.1 dc Analysis
The voltage drop across base resistor RB is (VCC -VBE).
Therefore, base current IB is
IB = (VCC - VBE)/RB
(2.25)
(2.26)
2.4.2.1 dcAnalysis
At base-emitter loop,
IBRB + VBE + IERE = VEE
(IC/)RB+ VBE +
(2.27)
+1
ICRE = VEE
VEE VBE
R E ( + 1) / + R B /
(2.28)
(2.29)
VCE = VC -VE
(2.30)
Example 2.6
Determine how much the Q-point of the circuit shown in the figure will change
over temperature where increases from 50 to 100 and VBE decreases from
0.7V to 0.6V.
Solution
For = 50 and VBE = 0.7V
VEE VBE
R E ( + 1) / + R B /
20V 0.7 V
=
10k(51 / 50) + 10k / 50
IC =
= 1.86mA
VC = VCC - ICRC
= 20V - (1.86mA)(5k)
= 10.72V
Therefore, the emitter voltage VE is
VE = -1.86mA/50x10k - 0.7V = -1.072V
and the collector-to-emitter voltage is
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VCE = VC -VE
= 10.72V - (-1.072V)
= 11.79V
For = 100 and VBE = 0.6V
VEE VBE
R E ( + 1) / + R B /
20V 0.6V
=
10k(101 / 100) + 10k / 100
IC =
= 1.90mA
VC = VCC - ICRC
= 20V - (1.90mA)(5k)
= 10.49V
Therefore, the emitter voltage and collector-to-emitter voltage are
VE = -1.90mA/100x10k- 0.6V = -0.79V
VCE = VC -VE
= 10.49V - (-0.79V)
= 11.28V
The % change in collector current IC as changes from 50 to 100 is
IC =
1.90mA 1.86mA
x100% = 2.15%
1.86mA
11.79V 11.28V
x100% = 4.32%
11.79V
From the results, one can conclude that the emitter bias circuit is a good way to
stabilize Q-point due to change of caused by temperature.
If the base current IB is very small as compared to current I2 flows in R2, then
the divider circuit can be simplied and depends on R1 and R2. Otherwise, the
input resistance RIN(base) at the base needs to take into consideration.
Figure 2.27: (a) Divider circuit without input resistance and (b) with input resistance
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2.4.3.1 dc Analysis
Consider circuit shown in Fig. 2.30, the base voltage VB at point A is equal to
VB =
R 2 || ( + 1)R E
VCC
R 1 + {R 2 || ( + 1)R E }
(2.31)
R2
VCC
R1 + R 2
(2.32)
VB VBE
RE
(2.33)
(2.34)
Usually the value of input base resistance RIN(base) = ( + 1)RE is much larger as
compared to R2. Therefore, Q-point is only slightly effected by , which is
temperature dependent.
Example 2.7
Using the circuit shown in the figure, determine the values of base voltage VB
and emitter current IE.
If the transistor is replaced with one that has = 250, what is the change of
base voltage VB?
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Solution
In this example, RIN(base) cannot be ignored since it involves parameter.
RIN(base) = 51(1k) = 51k
R 2 || R IN ( base )
VB =
R 1 + R 2 || R IN ( base )
VCC
50k || 51k
10V
100k + 50k || 51k
= 2.01V
IE = (VB-VBE)/RE
= (2.01V- 0.7V)/1k
= 1.31mA
If beta increases to 250, input base reistance RIN(base) is 251k and base
votlage VB is
VB =
50k || 251k
10V
100k + 50k || 251k
= 2.94V
Base voltage VB increases from 2.01V to 2.94V.
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2.4.4.1 dc Analysis
The base current IB is
IB =
VC VBE
RB
(2.35)
VCC I C R C VBE
RB
(2.36)
V VBE
I C = CC
RC + RB /
(2.37)
Normally the value of RB/ is small as compared to RC. Thus, collector current
IC is fairly independent of .
(A / b ) Q 2
(A / b ) Q1
2
is established. If transistor
1
(2.38)
IREF is also equal to the sum of collector current IC flows in transistor Q1 and the
base current flows in both transistors. Thus,
IREF = IC + 2IB
also
IREF = IC +2IC/
and IC = I, therefore, current I =
same value.
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VA + VCE
V
A .
IC
IC
At saturation and upon further increase VCE voltage, the depletion thickness
at collector-to-base region increases in such that the effective width W of the
base is reduced. This causes an increase of minority carrier, which is the source
of reversed saturation current IS. Knowing that IS is inversely proportional to W
and IC = IS e V / V , thus there is an increase of IC current.
BE
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Figure 2.32: The figure shows that the output resistance rO has finite value
(Vin VBE )
. However, at saturation collector current IC is equal to IC = VCC/RC.
RB
V VBE
. If Vin = VCC, then CC
VCC
mean that ratio of RB/RC is less than for a transistor to operate as a switch.
This result infers that the ratio of IC/IB current is less than for a bipolar
junction transistor to work as switch.
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Tutorials
2.1.
2.2.
2.3.
2.4.
2.5.
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2.6.
Find VCE, VBE, and VCB of the transistor shown in figure below. Deduce
whether or not the transistor is saturated.
2.7.
Calculate the VCE(max) and IC(sat) for the amplifier shown in figure below
and draw its dc load line. What is the ac range can be applied at the base
without distortion given that = 100?
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2.8.
2.9.
Among the dc biasing circuits for transistor that you have learnt, name
the one that its Q-point will be greatly affected by temp.variation. State
the reason.
References
1. Theodore F. Bogart Jr., Jeffrey S. Beasley, and Guillermo Rico, Electronic
Devices and Circuit, sixth edition, Prentice Hall, 2004.
2. Thomas L. Floyd, "Electronic Devices", Prentice Hall International,
Inc.,1999.
3. Adel S. Sedra and Kenneth C. Smith, "Microelectronic Circuits", fourth
edition, Oxford University Press, 1998.
4. Robert L. Boylestad, and Louis Nashelsky, Electronic Devices and Circuit
Theory, eighth edition, Prentice Hall, 2002.
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