High Voltage Fast-Switching NPN Power Transistor: Applications

MJE13009
HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125oC
3
APPLICATIONS
ELECTRONIC TRANSFORMER FOR
HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The MJE13009 is a high voltage Multiepitaxial
Mesa NPN transistor mounted in Jedec TO-220
plastic package. It uses a Hollow Emitter
structure to enhance switching speeds.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol
Parameter
Value
Unit
V CEO
Collector-Emitter Voltage (I B = 0)
400
V CEV
Collector-Emitter Voltage (V BE = -1.5 V)
700
V EBO
Emitter-Base Voltage (I C = 0)
Collector Current
12
Collector Peak Current (t p 10 ms)

Base Current
25
IC
I CM
IB
I BM
IE
Base Peak Current (t p 10 ms)

Emitter Current
I EM
Emitter Peak Current
P tot
Total Power Dissipation at T c 25 o C

Storage Temperature
T stg
Tj
Max. Operating Junction Temperature
12
18
36
110
-65 to 150
150
November 2002
This datasheet has been downloaded from http://www.digchip.com at this page
1/6
MJE13009
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
1.14
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol
Parameter
Test Conditions
I CEV
Collector Cut-off
V CE = 700 V
Current (V EB = -1.5 V) V CE = 700 V
I EBO
Emitter Cut-off
Current (I C = 0)
V CEO(sus) Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat)
V BE(sat)
h FE
fT
C OB
t on
ts
tf
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Min.
T case = 100 o C
V EB = 9 V
I C = 10 mA
IC = 5 A
IC = 8 A
I C = 12 A
IC = 8 A
T case = 100 o C
IB
IB
IB
IB
IC = 5 A
IC = 8 A
IC = 8 A
T case = 100 o C
IB = 1 A
I B = 1.6 A
I B = 1.6 A
=
=
=
=
V CE = 5 V
V CE = 5 V
8
6
Transition Frequency
I C = 500 mA
V CE = 10 V
Output Capacitance
(I E = 0)
V CB = 10 V
f = 0.1 MHz
I C = 8A
t p = 25 s
(see figure 2)
Pulsed: Pulse duration = 300s, duty cycle 2 %
Safe Operating Areas
2/6
Unit
1
5
mA
mA
mA
V
1A
1.6 A
3A
1.6 A
IC = 5 A
IC = 8 A
V CC = 125 V
I B1 = -IB2 = 1.6 A
Duty Cycle 1
Max.
400
DC Current Gain
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
Typ.
Derating Curve
1
1.5
3
V
V
V
1.2
1.6
V
V
1.5
40
30
MHz
180
pF
1.1
3
0.7
s
s
s
MJE13009
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Load Fall Time
Inductive Load Storage Time
3/6
MJE13009
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit
1) Fast electronic switch

2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Ciurcuit
1) Fast electronic switch

2) Non-inductive Resistor
4/6
MJE13009
TO-220 MECHANICAL DATA

DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.052
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
5/6
MJE13009
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2002 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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6/6

High Voltage Fast-Switching NPN Power Transistor: Applications

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MJE13009

HIGH VOLTAGE FAST-SWITCHING

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Collector-Emitter Voltage (V BE = -1.5 V)

Collector Peak Current (t p 10 ms)

Base Peak Current (t p 10 ms)

Emitter Peak Current

Total Power Dissipation at T c 25 o C

Max. Operating Junction Temperature

This datasheet has been downloaded from http://www.digchip.com at this page

Thermal Resistance Junction-case

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Pulsed: Pulse duration = 300s, duty cycle 2 %

Safe Operating Areas

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Inductive Load Fall Time

Inductive Load Storage Time

Figure 1: Inductive Load Switching Test Circuit

1) Fast electronic switch

Figure 2: Resistive Load Switching Test Ciurcuit

1) Fast electronic switch

TO-220 MECHANICAL DATA

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