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B988

This document provides the product specification for the 2SB988 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package and is intended for vertical output and general purpose applications. The specification lists the transistor's maximum ratings, characteristics such as collector-emitter saturation voltage, current gain, and transition frequency, and its package outline dimensions.

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Bruno Alves
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159 views3 pages

B988

This document provides the product specification for the 2SB988 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package and is intended for vertical output and general purpose applications. The specification lists the transistor's maximum ratings, characteristics such as collector-emitter saturation voltage, current gain, and transition frequency, and its package outline dimensions.

Uploaded by

Bruno Alves
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
Download as pdf or txt
Download as pdf or txt
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SavantIC Semiconductor

Product Specification

2SB988

Silicon PNP Power Transistors

www.DataSheet4U.com

DESCRIPTION
With TO-220C package
Low collector saturation voltage
APPLICATIONS
For vertical output and general purpose
applicaitons
PINNING
PIN

DESCRIPTION

Emitter

Collector;connected to
mounting base

Base

Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-60

VCEO

Collector-emitter voltage

Open base

-60

VEBO

Emitter-base voltage

Open collector

-7

IC

Collector current (DC)

-3

IB

Base current

-0.5

PC

Collector dissipation

30

Tj

Junction temperature

150

Tstg

Storage temperature

-50~150

TC=25

Free Datasheet http://www.datasheet4u.net/

SavantIC Semiconductor

Product Specification

2SB988

Silicon PNP Power Transistors

www.DataSheet4U.com

CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

V(BR)CEO

Collector-emitter breakdown voltage

IC=-30mA; IB=0

VCEsat

Collector-emitter saturation voltage

IC=-3A; IB=-0.3A

-1.0

VBE

Base-emitter on voltage

IC=-0.5A ; VCE=-5V

-1.0

ICBO

Collector cut-off current

VCB=-60V; IE=0

-0.1

mA

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-0.1

mA

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

60

hFE-2

DC current gain

IC=-3A ; VCE=-5V

20

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-5V

-60

UNIT
V

200

150

pF

MHz

hFE-1 Classifications
O

60-120

100-200

Free Datasheet http://www.datasheet4u.net/

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

www.DataSheet4U.com

2SB988

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:0.10mm)

Free Datasheet http://www.datasheet4u.net/

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