Scribd Logo
Upload

Welcome to Scribd!

  • 60 views

    Electronic Devices: EEE F214

    Uploaded by

    KapilAgrawal
    This document contains lecture notes from Dr. Navneet Gupta on electronic devices and semiconductor physics. The notes cover topics such as intrinsic carrier concentration, ionization of impurities, carrier concentration at different temperatures, drift velocity, mobility, and the Hall effect. Example problems are provided to illustrate concepts like determining carrier concentration and resistivity based on doping levels. The notes conclude with a discussion of the invariance of the Fermi level at thermal equilibrium between two materials in contact.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Electronic Devices: EEE F214

    Uploaded by

    KapilAgrawal
    60 views24 pages
    This document contains lecture notes from Dr. Navneet Gupta on electronic devices and semiconductor physics. The notes cover topics such as intrinsic carrier concentration, ionization of impurities, carrier concentration at different temperatures, drift velocity, mobility, and the Hall effect. Example problems are provided to illustrate concepts like determining carrier concentration and resistivity based on doping levels. The notes conclude with a discussion of the invariance of the Fermi level at thermal equilibrium between two materials in contact.

    Original Description:

    Original Title

    Lecture-7-9-ED.pdf

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document contains lecture notes from Dr. Navneet Gupta on electronic devices and semiconductor physics. The notes cover topics such as intrinsic carrier concentration, ionization of impurities, carrier concentration at different temperatures, drift velocity, mobility, and the Hall effect. Example problems are provided to illustrate concepts like determining carrier concentration and resistivity based on doping levels. The notes conclude with a discussion of the invariance of the Fermi level at thermal equilibrium between two materials in contact.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    60 views24 pages

    Electronic Devices: EEE F214

    Uploaded by

    KapilAgrawal
    This document contains lecture notes from Dr. Navneet Gupta on electronic devices and semiconductor physics. The notes cover topics such as intrinsic carrier concentration, ionization of impurities, carrier concentration at different temperatures, drift velocity, mobility, and the Hall effect. Example problems are provided to illustrate concepts like determining carrier concentration and resistivity based on doping levels. The notes conclude with a discussion of the invariance of the Fermi level at thermal equilibrium between two materials in contact.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 24

    Electronic Devices

    EEE F214
    Lecture 7-9
    Dr. Navneet Gupta

    Dr. Navneet Gupta

    Intrinsic Concentration (ni)


    ni

    Nc Nv e

    E g / 2 kT

    Dr. Navneet Gupta

    Lecture-7

    Example:2
    A Si sample is doped with 1017 As atoms/cm3. What is the
    equilibrium hole concentration po at 300K? Where is EF relative
    to Ei?

    Why Si doped with 1014 cm-3 donors is n-type at


    400K but Ge is not ??
    Si crystal contains 10-4 %of arsenic. It then
    receives a uniform doping of 3 x 1016 cm-3
    Phosporous and 1018cm-3 Boron. Calculate
    density of majority carriers.
    Dr. Navneet Gupta

    Ionization of Impurities

    Dr. Navneet Gupta

    Shallow impurities readily ionize so that the free carrier density


    equals the impurity concentration:
    Dr. Navneet Gupta

    Dr. Navneet Gupta

    Example-4
    Consider a phosphorus-doped Si sample at 300K with ND =
    1017 cm-3. What fraction of the donors are not ionized?
    Answer: Suppose all of the donor atoms are ionized.

    Nc
    EF Ec kT ln
    146meV
    no
    1
    Probability of non-ionization
    1 ( ED EF )/ kT
    1 e
    2
    1

    0.039 3.9%
    1 (146 meV 45 meV )/26 meV
    1 e
    2
    Dr. Navneet Gupta
    7

    Carrier Concentration at Extremely high and low temperatures

    Dr. Navneet Gupta

    Lecture-8

    Compensated Semiconductor
    A compensated semiconductor is one that contains both donor
    and acceptor impurity atoms in the same region.
    Can be formed, e.g, by diffusing acceptor impurities into an ntype material, or by diffusing donor impurities into a p-type
    material.
    N-type compensated sc: Nd>Na
    P-type compensated sc: Na>Nd
    If Na = Nd, compensated sc has characteristics of an intrinsic
    material

    Space Charge Neutrality


    To remain electrostatically neutral:
    holes + ionized donor atoms = electrons + ionized acceptor atoms
    Dr. Navneet Gupta

    p0 N d n0 N a

    Nd Na
    Nd Na
    2
    n0

    ni
    2
    2

    n0 N d N a

    Dr. Navneet Gupta

    10

    Example:5
    Determine the thermal equilibrium electron and hole
    concentration in a compensated p-type semiconductor.
    Consider Si at 300K doped in which doping concentrations
    are Na = 2 x 1016 cm-3 and Nd = 5 x 1015 cm-3 .
    Comment: This example illustrates the fact that if we
    assume complete ionization and if Na - Nd >> ni, then
    majority-carrier hole conc. is, to a very good approx., just
    the difference between the acceptor and donor impurity
    conc.

    Dr. Navneet Gupta

    11

    Drift of carriers in Electric Field


    force
    Electric Field

    Semiconductor

    Electrons and holes

    Net
    movement

    DRIFT
    Random thermal motion

    Well directed drift velocity with an applied EF

    Because of scattering, electrons in a semiconductor do not achieve constant acceleration.


    However, they can be viewed as quasi-classical particles moving at a constant average drift
    velocity vd
    Dr. Navneet Gupta

    12

    *
    m
    With every collision, the electron loses momentum =
    n vd

    Between collisions, the electron gains momentum = (-q)Etmn


    (tmn is the average time between electron scattering events)

    mn*vd = (-q)Etmn

    |vd| = qEtmn / mn* = mn E

    mn [qtmn / mn*] is the electron mobility


    Similarly, for holes:

    |vd| = qEtmp / mp* mp E

    mp [qtmp / mp*] is the hole mobility


    Electron and hole mobilities of selected intrinsic semiconductors (T=300K)

    m n (cm2/Vs)
    m p (cm2/Vs)

    Si
    1350

    Ge
    3900

    GaAs
    8500

    InAs
    30000

    480

    1900

    400

    500

    Dr. Navneet Gupta

    13

    Current density:

    Dr. Navneet Gupta

    14

    Example:4
    At 300K a Si specimen of length 2 cm and cross section 2
    mm2 is doped with 1017 atoms of As and 9 x 10 16 atoms of B.
    Take n = 510 cm2/V-sec and p = 187 cm2/V-sec. Find the
    resistance and the conductivity of the sample.
    Answer= R = 122.55 ohms and = 0.816 per ohm cm

    Dr. Navneet Gupta

    15

    Lecture-9

    Effects of Temperature on Mobility


    Scattering Mechanisms
    Ionized Impurity scattering (Due to impurities in
    semiconductors): I. m T 3/2
    I
    Lattice scattering (Carrier is scattered by the vibration of the
    lattice due to temperature): L

    m L T 3/2

    1 1 1
    ......
    m m1 m 2

    The mobilities due to two or more


    scattering mechanisms add inversely
    Dr. Navneet Gupta

    16

    Effect of doping
    on mobility

    At 300K:
    n (intrinsic Si) = 1350 cm2/V-sec

    n (with 1017 cm-3 doping conc.) =


    700 cm2/V-sec

    Figure
    Mobilities in Si and GaAs at 300
    K as a function of impurity
    concentration.
    Dr. Navneet Gupta

    17

    Effect of High-Field on mobility


    Large electric field (> 103 V/cm) can cause the drift velocity and
    therefore the current J = -qnvd to exhibit a sublinear dependence
    on Electric Field.(an example of hot carrier effect)

    Dr. Navneet Gupta

    18

    Effect of electric and magnetic field: Hall Effect


    Statement: When a semiconductor carrying a current I is
    placed in a transverse magnetic field, a potential difference is
    produced in the direction normal to both the current and
    magnetic field directions
    Importance:
    To distinguish whether a
    semiconductor is n-type or ptype
    To measure the majoritycarrier concentration.
    To calculate the majoritycarrier mobility.

    Dr. Navneet Gupta

    19

    Dr. Navneet Gupta

    20

    Example:7

    EEE C381

    Dr. Navneet Gupta

    21

    Example:8
    A sample of Si is doped with 1017 phosphorous atoms/cm3.
    What would you expect to measure for its resistivity? What
    Hall voltage you expect in a sample 100m thick if Ix = 1 mA
    and Bz=1kG
    Answer: -62.5 V

    EEE C381

    Dr. Navneet Gupta

    22

    Invariance of the Fermi level at Equilibrium


    Consider the junction between two materials: (which may be :)

    At equilibrium: no discontinuity or gradient can arise in the equilibrium Fermi level


    E

    Consider two materials in intimate contact.


    EF
    Material
    1

    Material
    2

    N1(E)
    N2(E)
    At thermal equilibrium: no current
    f1(E)
    and therefore
    no f2(E)
    net charge
    transport and no net transfer of
    energy
    EEE C381

    Dr. Navneet Gupta

    23

    END OF

    CHAPTER-3

    EEE C381

    Dr. Navneet Gupta

    24

    You might also like