STM32F7

STM32F756xx
ARM-based Cortex-M7 32b MCU+FPU, 462DMIPS, up to 1MB Flash/320+16+ 4KB

RAM, crypto, USB OTG HS/FS, ethernet, 18 TIMs, 3 ADCs, 25 com itf, cam & LCD
Datasheet - production data
Features
&"'!
Core: ARM 32-bit Cortex -M7 CPU with FPU,

adaptive real-time accelerator (ART
Accelerator) and L1-cache: 4KB data cache
and 4KB instruction cache, allowing 0-wait
state execution from embedded Flash memory
and external memories, frequency up to
216 MHz, MPU, 462 DMIPS/2.14 DMIPS/MHz
(Dhrystone 2.1), and DSP instructions.
Memories
Up to 1MB of Flash memory
1024 bytes of OTP memory
SRAM: 320KB (including 64KB of data
TCM RAM for critical real-time data) +
16KB of instruction TCM RAM (for critical
real-time routines) + 4KB of backup SRAM
(available in the lowest power modes)
Flexible external memory controller with up
to 32-bit data bus: SRAM, PSRAM,
SDRAM/LPSDR SDRAM, NOR/NAND
memories
Dual mode Quad-SPI
LCD parallel interface, 8080/6800 modes
LCD-TFT controller up to XGA resolution with
dedicated Chrom-ART Accelerator for
enhanced graphic content creation (DMA2D)
Clock, reset and supply management
1.7 V to 3.6 V application supply and I/Os
POR, PDR, PVD and BOR
Dedicated USB power
4-to-26 MHz crystal oscillator
Internal 16 MHz factory-trimmed RC (1%
accuracy)
32 kHz oscillator for RTC with calibration
Internal 32 kHz RC with calibration
Low-power
Sleep, Stop and Standby modes
VBAT supply for RTC, 3232 bit backup
registers + 4KB backup SRAM
312-bit, 2.4 MSPS ADC: up to 24 channels
and 7.2 MSPS in triple interleaved mode
212-bit D/A converters
Up to 18 timers: up to thirteen 16-bit (1x lowpower 16-bit timer available in Stop mode) and
two 32-bit timers, each with up to 4
IC/OC/PWM or pulse counter and quadrature
(incremental) encoder input. All 15 timers
running up to 216 MHz. 2x watchdogs, SysTick
timer
February 2016
This is information on a product in full production.
LQFP100 (14x14 mm)

LQFP144 (20x20 mm)
LQFP176 (24x24 mm)
LQFP208 (28x28 mm)
UFBGA176 (10x10 mm)

TFBGA216 (13x13 mm)
TFBGA100 (8x8 mm)
WLCSP143
(4.5x5.8 mm)
General-purpose DMA: 16-stream DMA

controller with FIFOs and burst support
Debug mode
SWD & JTAG interfaces
Cortex-M7 Trace Macrocell
Up to 168 I/O ports with interrupt capability
Up to 164 fast I/Os up to 108 MHz
Up to 166 5 V-tolerant I/Os
Up to 25 communication interfaces
Up to 4 I2C interfaces (SMBus/PMBus)
Up to 4 USARTs/4 UARTs (27 Mbit/s,
ISO7816 interface, LIN, IrDA, modem
control)
Up to 6 SPIs (up2to 50 Mbit/s), 3 with
muxed simplex I S for audio class
accuracy via internal audio PLL or external
clock
2 x SAIs (serial audio interface)
2 CANs (2.0B active) and SDMMC
interface
SPDIFRX interface
HDMI-CEC
Advanced connectivity
USB 2.0 full-speed device/host/OTG
controller with on-chip PHY
USB 2.0 high-speed/full-speed
device/host/OTG controller with dedicated
DMA, on-chip full-speed PHY and ULPI
10/100 Ethernet MAC with dedicated DMA:
supports IEEE 1588v2 hardware, MII/RMII
8- to 14-bit parallel camera interface up to
54 Mbyte/s
Cryptographic acceleration: hardware
acceleration for AES 128, 192, 256, triple DES,
HASH (MD5, SHA-1, SHA-2), and HMAC
True random number generator
CRC calculation unit
RTC: subsecond accuracy, hardware calendar
96-bit unique ID
Table 1. Device summary
Reference
STM32F756xx
DocID027589 Rev 4
Part number
STM32F756VG, STM32F756ZG, STM32F756IG,
STM32F756BG, STM32F756NG
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Contents
STM32F756xx
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1.1
Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.1
ARM Cortex-M7 with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.2
Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3
Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.4
CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 18
2.5
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.6
AXI-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.7
DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.8
Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.9
Quad-SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 21
2.10
LCD-TFT controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2.11
Chrom-ART Accelerator (DMA2D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2.12
Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 22
2.13
External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.14
Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.15
Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.16
Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.17
Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2.18
2.17.1
Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2.17.2
Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2.18.1
Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2.18.2
Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
2.18.3
Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 30
2.19
Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 30
2.20
Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
2.21
VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
2.22
Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

2.22.1
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Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 34

DocID027589 Rev 4
STM32F756xx
Contents
2.22.2
General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2.22.3
Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.22.4
Low-power timer (LPTIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.22.5
Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.22.6
Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.22.7
SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.23
Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
2.24
Universal synchronous/asynchronous receiver transmitters (USART) . . 37
2.25
Serial peripheral interface (SPI)/inter- integrated sound interfaces (I2S) . 38
2.26
Serial audio interface (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.27
SPDIFRX Receiver Interface (SPDIFRX) . . . . . . . . . . . . . . . . . . . . . . . . . 39
2.28
Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
2.29
Audio and LCD PLL(PLLSAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
2.30
SD/SDIO/MMC card host interface (SDMMC) . . . . . . . . . . . . . . . . . . . . . 40
2.31
Ethernet MAC interface with dedicated DMA and IEEE 1588 support . . . 40
2.32
Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
2.33
Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 41
2.34
Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 41
2.35
High-definition multimedia interface (HDMI) - consumer

electronics control (CEC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
2.36
Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
2.37
Cryptographic acceleration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
2.38
Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
2.39
General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 43
2.40
Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
2.41
Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
2.42
Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
2.43
Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 44
2.44
Embedded Trace Macrocell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
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Contents
STM32F756xx
5.1
4/228
Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.1.1
Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.1.2
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.1.3
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.1.4
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.1.5
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.1.6
Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
5.1.7
Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
5.2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
5.3
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
5.3.1
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
5.3.2
VCAP1/VCAP2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
5.3.3
Operating conditions at power-up / power-down (regulator ON) . . . . . 102
5.3.4
Operating conditions at power-up / power-down (regulator OFF) . . . . 102
5.3.5
Reset and power control block characteristics . . . . . . . . . . . . . . . . . . 102
5.3.6
Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 104
5.3.7
Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
5.3.8
Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 122
5.3.9
External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 123
5.3.10
Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 128
5.3.11
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
5.3.12
PLL spread spectrum clock generation (SSCG) characteristics . . . . . 132
5.3.13
Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
5.3.14
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
5.3.15
Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 138
5.3.16
I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
5.3.17
I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
5.3.18
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
5.3.19
TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
5.3.20
RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
5.3.21
12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
5.3.22
Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
5.3.23
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
5.3.24
Reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
5.3.25
DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
5.3.26
Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
5.3.27
FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
DocID027589 Rev 4
STM32F756xx
Contents
5.3.28
Quad-SPI interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
5.3.29
Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 192
5.3.30
LCD-TFT controller (LTDC) characteristics . . . . . . . . . . . . . . . . . . . . . 193
5.3.31
SD/SDIO MMC card host interface (SDMMC) characteristics . . . . . . . 195
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197

6.1
LQFP100, 14 x 14 mm low-profile quad flat package information . . . . . 197
6.2
TFBGA100, 8 x 8 x 0.8 mm thin fine-pitch ball grid array

package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
6.3
WLCSP143, 4.539x 5.849 mm, 0.4 mm pitch wafer level chip

scale package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
6.4
6.5
6.6
6.7
UFBGA 176+25, 10 x 10 x 0.65 mm ultra thin-pitch ball grid

array package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
6.8
TFBGA216, 13 13 0.8 mm thin fine-pitch ball grid array

package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
6.9
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
Appendix A Recommendations when using internal reset OFF . . . . . . . . . . . 225

A.1
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
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List of tables
STM32F756xx
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
6/228
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
STM32F756xx features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Voltage regulator configuration mode versus device operating mode . . . . . . . . . . . . . . . . 27
Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 30
Voltage regulator modes in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
USART implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
STM32F756xx pin and ball definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
FMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
STM32F756xx alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
STM32F756xx register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . 101
VCAP1/VCAP2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . 102
Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . 102
reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Typical and maximum current consumption in Run mode, code with data processing
running from ITCM RAM, regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
running from Flash memory (ART ON except prefetch / L1-cache ON)
or SRAM on AXI (L1-cache ON), regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
running from Flash memory or SRAM on AXI (L1-cache disabled), regulator ON . . . . . 107
running from Flash memory on ITCM interface (ART disabled), regulator ON . . . . . . . . 108
or SRAM on AXI (L1-cache ON), regulator OFF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Typical and maximum current consumption in Sleep mode, regulator ON. . . . . . . . . . . . 110
Typical and maximum current consumption in Sleep mode, regulator OFF . . . . . . . . . . . 110
Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . 111
Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . 112
Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . 113
Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
HSE 4-26 MHz oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
DocID027589 Rev 4
STM32F756xx
Table 42.
Table 43.
Table 44.
Table 45.
Table 46.
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
Table 54.
Table 55.
Table 56.
Table 57.
Table 58.
Table 59.
Table 60.
Table 61.
Table 62.
Table 63.
Table 64.
Table 65.
Table 66.
Table 67.
Table 68.
Table 69.
Table 70.
Table 71.
Table 72.
Table 73.
Table 74.
Table 75.
Table 76.
Table 77.
Table 78.
Table 79.
Table 80.
Table 81.
Table 82.
Table 83.
Table 84.
Table 85.
Table 86.
Table 87.
Table 88.
Table 89.
Table 90.
Table 91.
Table 92.
Table 93.
List of tables
LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129

Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
PLLI2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
PLLISAI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
ADC static accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
ADC dynamic accuracy at fADC = 18 MHz - limited test conditions . . . . . . . . . . . . . . . . . 149
ADC dynamic accuracy at fADC = 36 MHz - limited test conditions . . . . . . . . . . . . . . . . . 149
Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Minimum I2CCLK frequency in all I2C modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
USB OTG full speed startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
USB OTG full speed DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
USB OTG full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Dynamic characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Dynamics characteristics: Ethernet MAC signals for SMI. . . . . . . . . . . . . . . . . . . . . . . . . 168
Dynamics characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . 168
Dynamics characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . 169
Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . 172
Asynchronous non-multiplexed SRAM/PSRAM/NOR read - NWAIT timings . . . . . . . . . . 172
Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 173
Asynchronous non-multiplexed SRAM/PSRAM/NOR write - NWAIT timings. . . . . . . . . . 174
Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 175
DocID027589 Rev 4
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8
List of tables
Table 94.
Table 95.
Table 96.
Table 97.
Table 98.
Table 99.
Table 100.
Table 101.
Table 102.
Table 103.
Table 104.
Table 105.
Table 106.
Table 107.
Table 108.
Table 109.
Table 110.
Table 111.
Table 112.
Table 113.
Table 114.
Table 115.
Table 116.
Table 117.
Table 118.
Table 119.
Table 120.
Table 121.
Table 122.
Table 123.
Table 124.
Table 125.
Table 126.
Table 127.
8/228
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Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 176

Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 177
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 182
Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 186
SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
LPSDR SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Quad-SPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Quad-SPI characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
LTDC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Dynamic characteristics: SD / MMC characteristics, VDD=2.7V to 3.6V . . . . . . . . . . . . . 196
Dynamic characteristics: eMMC characteristics, VDD=1.71V to 1.9V . . . . . . . . . . . . . . . 196
LQPF100, 14 x 14 mm 100-pin low-profile quad flat package mechanical data. . . . . . . . 198
TFBGA100, 8 x 8 0.8 mm thin fine-pitch ball grid array
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
TFBGA100 recommended PCB design rules (0.8 mm pitch BGA). . . . . . . . . . . . . . . . . . 202
WLCSP143, 4.539x 5.849 mm, 0.4 mm pitch wafer level chip scale
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
WLCSP143 recommended PCB design rules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
UFBGA 176+25, 10 10 0.65 mm ultra thin fine-pitch ball grid array
UFBGA176+25 recommended PCB design rules (0.65 mm pitch BGA) . . . . . . . . . . . . . 218
TFBGA216 recommended PCB design rules (0.8 mm pitch BGA). . . . . . . . . . . . . . . . . . 221
Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . 225
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
DocID027589 Rev 4
STM32F756xx
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Compatible board design for LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

STM32F756xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STM32F756xx AXI-AHB bus matrix architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
VDDUSB connected to VDD power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
VDDUSB connected to external power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 25
PDR_ON control with internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Startup in regulator OFF: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . 29
Startup in regulator OFF mode: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . 29
STM32F756Vx LQFP100 pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
STM32F756Vx TFBGA100 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
STM32F756Zx WLCSP143 ballout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
STM32F756Zx LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
STM32F756Ix LQFP176 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
STM32F756Bx LQFP208 pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
STM32F756Ix UFBGA176 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
STM32F756Nx TFBGA216 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Typical VBAT current consumption (RTC ON/BKP SRAM OFF and
LSE in low drive mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
LSE in medium low drive mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
LSE in medium high drive mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
LSE in high drive mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
LSE in high medium drive mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
HSI deviation versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
LSI deviation versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
FT I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
DocID027589 Rev 4
9/228
11
List of figures
Figure 42.
Figure 43.
Figure 44.
Figure 45.
Figure 46.
Figure 47.
Figure 48.
Figure 49.
Figure 50.
Figure 51.
Figure 52.
Figure 53.
Figure 54.
Figure 55.
Figure 56.
Figure 57.
Figure 58.
Figure 59.
Figure 60.
Figure 61.
Figure 62.
Figure 63.
Figure 64.
Figure 65.
Figure 66.
Figure 67.
Figure 68.
Figure 69.
Figure 70.
Figure 71.
Figure 72.
Figure 73.
Figure 74.
Figure 75.
Figure 76.
Figure 77.
Figure 78.
Figure 79.
Figure 80.
Figure 81.
Figure 82.
Figure 83.
Figure 84.
Figure 85.
Figure 86.
10/228
STM32F756xx
Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150

Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 151
Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 151
12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
USB OTG full speed timings: definition of data signal rise and fall time . . . . . . . . . . . . . . 165
ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 171
Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 173
Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 174
Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 176
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 182
Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 185
NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 186
SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Quad-SPI timing diagram - SDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Quad-SPI timing diagram - DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
LCD-TFT horizontal timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
LCD-TFT vertical timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 197
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
TFBGA100, 8 8 0.8mm thin fine-pitch ball grid array package
top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
DocID027589 Rev 4
STM32F756xx
List of figures
Figure 87.
WLCSP143, 0.4 mm pitch wafer level chip scale package

top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Figure 88. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 206
Figure 89. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package
Figure 90. LQFP144, 20 x 20mm, 144-pin low-profile quad flat package
top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216
Figure 97. UFBGA 176+25, 10 10 0.65 mm ultra thin fine-pitch ball grid array
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Figure 98. UFBGA176+25, 10 x 10 x 0.65 mm, ultra fine-pitch ball grid array
package top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
Figure 100. TFBGA216, 13 13 0.8 mm thin fine-pitch ball grid array
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
Figure 101. TFBGA216, 13 x 13 x 0.8 mm thin fine-pitch ball grid array
package top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222
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11
Description
STM32F756xx
Description
The STM32F756xx devices are based on the high-performance ARM Cortex-M7 32-bit
RISC core operating at up to 216 MHz frequency. The Cortex-M7 core features a single
floating point unit (SFPU) precision which supports all ARM single-precision dataprocessing instructions and data types. It also implements a full set of DSP instructions and
a memory protection unit (MPU) which enhances the application security.
The STM32F756xx devices incorporate high-speed embedded memories with a Flash
memory up to 1 Mbyte, 320 Kbytes of SRAM (including 64 Kbytes of Data TCM RAM for
critical real-time data), 16 Kbytes of instruction TCM RAM (for critical real-time routines),
4 Kbytes of backup SRAM available in the lowest power modes, and an extensive range of
enhanced I/Os and peripherals connected to two APB buses, two AHB buses, a 32-bit multiAHB bus matrix and a multi layer AXI interconnect supporting internal and external
memories access.
All the devices offer three 12-bit ADCs, two DACs, a low-power RTC, thirteen generalpurpose 16-bit timers including two PWM timers for motor control and one low-power timer
available in Stop mode, two general-purpose 32-bit timers, a true random number generator
(RNG), and a cryptographic acceleration cell. They also feature standard and advanced
communication interfaces.
Up to four I2Cs
Six SPIs, three I2Ss in duplex mode. To achieve the audio class accuracy, the I2S
peripherals can be clocked via a dedicated internal audio PLL or via an external clock
to allow synchronization.
Four USARTs plus four UARTs
An USB OTG full-speed and a USB OTG high-speed with full-speed capability (with the
ULPI),
Two CANs
Two SAI serial audio interfaces
An SDMMC host interface
Ethernet and camera interfaces
LCD-TFT display controller
Chrom-ART Accelerator
SPDIFRX interface
HDMI-CEC
Advanced peripherals include an SDMMC interface, a flexible memory control (FMC)

interface, a Quad-SPI Flash memory interface, a camera interface for CMOS sensors and a
cryptographic acceleration cell. Refer to Table 2: STM32F756xx features and peripheral
counts for the list of peripherals available on each part number.
The STM32F756xx devices operate in the 40 to +105 C temperature range from a 1.7 to
3.6 V power supply. A dedicated supply input for USB (OTG_FS and OTG_HS) is available
on all the packages except LQFP100 for a greater power supply choice.
The supply voltage can drop to 1.7 V with the use of an external power supply supervisor
(refer to Section 2.17.2: Internal reset OFF). A comprehensive set of power-saving mode
allows the design of low-power applications.
The STM32F756xx devices offer devices in 8 packages ranging from 100 pins to 216 pins.
The set of included peripherals changes with the device chosen.
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DocID027589 Rev 4
STM32F756xx
Description
These features make the STM32F756xx microcontrollers suitable for a wide range of
applications:
Motor drive and application control,
Medical equipment,
Industrial applications: PLC, inverters, circuit breakers,
Printers, and scanners,
Alarm systems, video intercom, and HVAC,
Home audio appliances,
Mobile applications, Internet of Things,
Wearable devices: smartwatches.
Figure 2 shows the general block diagram of the device family.

Table 2. STM32F756xx features and peripheral counts
Peripherals
Flash memory in Kbytes
SRAM in Kbytes
STM32F756Vx
STM32F756Zx
STM32F756Ix
512
512
512
1024
1024
320(240+16+64)
Instruction
16
Backup
General-purpose
10
Advancedcontrol
Basic
Low-power
512
1024
Yes
SPI / I2S
4/3 (simplex)(2)
6/3 (simplex)(2)
I2C
USART/UART
4/4
USB OTG FS
Yes
USB OTG HS
Yes
CAN
SAI
SPDIFRX
4 inputs
SDMMC
Yes
Camera interface
Yes
LCD-TFT
Yes
Chrom-ART Accelerator (DMA2D)
Yes
Cryptography
Yes
82
114
12-bit ADC
Number of channels
1024
Yes
Random number generator
GPIOs
512
STM32F756Nx
Yes(1)
Ethernet
Communication interfaces
1024
System
FMC memory controller
Timers
STM32F756Bx
140
168
3
16
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45
Description
STM32F756xx
Table 2. STM32F756xx features and peripheral counts (continued)
Peripherals
STM32F756Vx
STM32F756Zx
12-bit DAC
Number of channels
STM32F756Bx
STM32F756Nx
Yes
2
216 MHz(3)
Maximum CPU frequency
1.7 to 3.6 V(4)
Operating voltage
Ambient temperatures: 40 to +85 C /40 to +105 C
Operating temperatures
Package
STM32F756Ix
Junction temperature: 40 to + 125 C

LQFP100
TFBGA100
WLCSP143
LQFP144
UFBGA176
LQFP176
LQFP208
TFBGA216
1.
For the LQFP100 package, only FMC Bank1 is available. Bank1 can only support a multiplexed NOR/PSRAM memory using the NE1 Chip
Select.
2.
The SPI1, SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode.
3.
216 MHz maximum frequency for -40C to + 85C ambient temperature range (200 MHz maximum frequency for -40C to + 105C ambient
temperature range).
4.
VDD/VDDA minimum value of 1.7 V is obtained when the internal reset is OFF (refer to Section 2.17.2: Internal reset OFF).
14/228
DocID027589 Rev 4
STM32F756xx
Full compatibility throughout the family

The STM32F756xx devices are fully pin-to-pin, compatible with the STM32F4xxxx devices,
allowing the user to try different peripherals, and reaching higher performances (higher
frequency) for a greater degree of freedom during the development cycle.
Figure 1 give compatible board designs between the STM32F4xx families.
Figure 1. Compatible board design for LQFP100 package
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Description
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The STM32F756xx LQFP144, LQFP176, LQFP208, TFBGA216, UFBGA176, WLCSP143

packages are fully pin to pin compatible with STM32F4xxxx devices.
DocID027589 Rev 4
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45
Description
STM32F756xx
Figure 2. STM32F756xx block diagram
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1. The timers connected to APB2 are clocked from TIMxCLK up to 216 MHz, while the timers connected to APB1 are clocked
from TIMxCLK either up to 108 MHz or 216 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR register.
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DocID027589 Rev 4
STM32F756xx
Functional overview
Functional overview
2.1
ARM Cortex-M7 with FPU

The ARM Cortex-M7 with FPU processor is the latest generation of ARM processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and a low-power consumption, while
delivering an outstanding computational performance and low interrupt latency.
The Cortex-M7 processor is a highly efficient high-performance featuring:
Six-stage dual-issue pipeline
Dynamic branch prediction
Harvard caches (4 Kbytes of I-cache and 4 Kbytes of D-cache)
64-bit AXI4 interface
64-bit ITCM interface
2x32-bit DTCM interfaces
The processor supports the following memory interfaces:
Tightly Coupled Memory (TCM) interface.
Harvard instruction and data caches and AXI master (AXIM) interface.
Dedicated low-latency AHB-Lite peripheral (AHBP) interface.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU (floating point unit) speeds up the software development by using
metalanguage development tools, while avoiding saturation.
Figure 2 shows the general block diagram of the STM32F756xx family.
Note:
Cortex-M7 with FPU core is binary compatible with the Cortex-M4 core.
2.2
Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
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45
Functional overview
2.3
STM32F756xx
Embedded Flash memory

The STM32F756xx devices embed a Flash memory of up to 1 Mbyte available for storing
programs and data.
2.4
CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify the data transmission
or storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a mean of
verifying the Flash memory integrity. The CRC calculation unit helps to compute a signature
of the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.
2.5
Embedded SRAM
All the devices features:
System SRAM up to 320 Kbytes:
SRAM1 on AHB bus Matrix: 240 Kbytes
SRAM2 on AHB bus Matrix: 16 Kbytes
DTCM-RAM on TCM interface (Tighly Coupled Memory interface): 64 Kbytes for

critical real-time data.
Instruction RAM (ITCM-RAM) 16 Kbytes:
It is mapped on TCM interface and reserved only for CPU Execution/Instruction

useful for critical real-time routines.
The Data TCM RAM is accessible by the GP-DMAs and peripherals DMAs through specific
AHB slave of the CPU.The TCM RAM instruction is reserved only for CPU. It is accessed at
CPU clock speed with 0-wait states.
4 Kbytes of backup SRAM

This area is accessible only from the CPU. Its content is protected against possible
unwanted write accesses, and is retained in Standby or VBAT mode.
2.6
AXI-AHB bus matrix

The STM32F756xx system architecture is based on 2 sub-systems:
An AXI to multi AHB bridge converting AXI4 protocol to AHB-Lite protocol:
3x AXI to 32-bit AHB bridges connected to AHB bus matrix
1x AXI to 64-bit AHB bridge connected to the embedded flash
A multi-AHB Bus-Matrix:
18/228
The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs,
Ethernet, USB HS, LCD-TFT, and DMA2D) and the slaves (Flash memory, RAM,
FMC, Quad-SPI, AHB and APB peripherals) and ensures a seamless and an
efficient operation even when several high-speed peripherals work
simultaneously.
DocID027589 Rev 4
STM32F756xx
Functional overview
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2.7
DMA controller (DMA)

The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory and
memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,
support burst transfer and are designed to provide the maximum peripheral bandwidth
(AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
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Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.
The DMA can be used with the main peripherals:
2.8
SPI and I2S
I2C
USART
General-purpose, basic and advanced-control timers TIMx
DAC
SDMMC
Cryptographic acceleration
Camera interface (DCMI)
ADC
SAI
SPDIFRX
Quad-SPI
HDMI-CEC
Flexible memory controller (FMC)

The Flexible memory controller (FMC) includes three memory controllers:
The NOR/PSRAM memory controller
The NAND/memory controller
The Synchronous DRAM (SDRAM/Mobile LPSDR SDRAM) controller
The main features of the FMC controller are the following:
Interface with static-memory mapped devices including:
Static random access memory (SRAM)
NOR Flash memory/OneNAND Flash memory
PSRAM (4 memory banks)
NAND Flash memory with ECC hardware to check up to 8 Kbytes of data
Interface with synchronous DRAM (SDRAM/Mobile LPSDR SDRAM) memories
8-,16-,32-bit data bus width
Independent Chip Select control for each memory bank
Independent configuration for each memory bank
Write FIFO
Read FIFO for SDRAM controller
The Maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is

HCLK/2.
LCD parallel interface

The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
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specific LCD interfaces. This LCD parallel interface capability makes it easy to build costeffective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.
2.9
Quad-SPI memory interface (QUADSPI)

All devices embed a Quad-SPI memory interface, which is a specialized communication
interface targetting Single, Dual or Quad-SPI Flash memories. It can work in:
Direct mode through registers.
External flash status register polling mode.
Memory mapped mode.
Up to 256 Mbytes external flash are memory mapped, supporting 8, 16 and 32-bit access.
Code execution is supported.
The opcode and the frame format are fully programmable. Communication can be either in
Single Data Rate or Dual Data Rate.
2.10
LCD-TFT controller
The LCD-TFT display controller provides a 24-bit parallel digital RGB (Red, Green, Blue)
and delivers all signals to interface directly to a broad range of LCD and TFT panels up to
XGA (1024x768) resolution with the following features:
2.11
2 displays layers with dedicated FIFO (64x32-bit)
Color Look-Up table (CLUT) up to 256 colors (256x24-bit) per layer
Up to 8 Input color formats selectable per layer
Flexible blending between two layers using alpha value (per pixel or constant)
Flexible programmable parameters for each layer
Color keying (transparency color)
Up to 4 programmable interrupt events.
Chrom-ART Accelerator (DMA2D)

The Chrom-Art Accelerator (DMA2D) is a graphic accelerator which offers advanced bit
blitting, row data copy and pixel format conversion. It supports the following functions:
Rectangle filling with a fixed color
Rectangle copy
Rectangle copy with pixel format conversion
Rectangle composition with blending and pixel format conversion.
Various image format coding are supported, from indirect 4bpp color mode up to 32bpp
direct color. It embeds dedicated memory to store color lookup tables.
An interrupt can be generated when an operation is complete or at a programmed
watermark.
All the operations are fully automatized and are running independently from the CPU or the
DMAs.
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2.12
STM32F756xx
Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 97 maskable interrupt channels plus the 16 interrupt lines of the CortexM7 with FPU core.
Closely coupled NVIC gives low-latency interrupt processing
Interrupt entry vector table address passed directly to the core
Allows early processing of interrupts
Processing of late arriving, higher-priority interrupts
Support tail chaining
Processor state automatically saved
Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.
2.13
External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 24 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 168 GPIOs can be connected
to the 16 external interrupt lines.
2.14
Clocks and startup

On reset the 16 MHz internal HSI RC oscillator is selected as the default CPU clock. The
16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy. The application can
then select as system clock either the RC oscillator or an external 4-26 MHz clock source.
This clock can be monitored for failure. If a failure is detected, the system automatically
switches back to the internal RC oscillator and a software interrupt is generated (if enabled).
This clock source is input to a PLL thus allowing to increase the frequency up to 216 MHz.
Similarly, full interrupt management of the PLL clock entry is available when necessary (for
example if an indirectly used external oscillator fails).
Several prescalers allow the configuration of the two AHB buses, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the two AHB
buses is 216 MHz while the maximum frequency of the high-speed APB domains is
108 MHz. The maximum allowed frequency of the low-speed APB domain is 54 MHz.
The devices embed two dedicated PLL (PLLI2S and PLLSAI) which allow to achieve audio
class performance. In this case, the I2S and SAI master clock can generate all standard
sampling frequencies from 8 kHz to 192 kHz.
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2.15
Functional overview
Boot modes
At startup, the boot memory space is selected by the BOOT pin and BOOT_ADDx option
bytes, allowing to program any boot memory address from 0x0000 0000 to 0x3FFF FFFF
which includes:
All Flash address space mapped on ITCM or AXIM interface
All RAM address space: ITCM, DTCM RAMs and SRAMs mapped on AXIM interface
The System memory bootloader
The boot loader is located in system memory. It is used to reprogram the Flash memory
through a serial interface.
2.16
Note:
Power supply schemes
VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
VDD = 1.7 to 3.6 Vexternal power supply for I/Os and the internal regulator (when
enabled), provided externally through VDD pins.
VSSA, VDDA = 1.7 to 3.6 V: external analog power supplies for ADC, DAC, reset blocks,
RCs and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively.
VDD/VDDA minimum value of 1.7 V is obtained when the internal reset is OFF (refer to
Section 2.17.2: Internal reset OFF). Refer to Table 3: Voltage regulator configuration mode
versus device operating mode to identify the packages supporting this option.
VDDUSB can be connected either to VDD or an external independent power supply (3.0
to 3.6V) for USB transceivers (refer to Figure 4 and Figure 5). For example, when
device is powered at 1.8V, an independent power supply 3.3V can be connected to
VDDUSB. When the VDDUSB is connected to a separated power supply, it is independent
from VDD or VDDA but it must be the last supply to be provided and the first to
disappear. The following conditions VDDUSB must be respected:
During power-on phase (VDD < VDD_MIN), VDDUSB should be always lower than
VDD
During power-down phase (VDD < VDD_MIN), VDDUSB should be always lower than
VDD
VDDSUB rising and falling time rate specifications must be respected (see Table 20
and Table 21)
In operating mode phase, VDDUSB could be lower or higher than VDD:

- If USB (USB OTG_HS/OTG_FS) is used, the associated GPIOs powered by
VDDUSB are operating between VDDUSB_MIN and VDDUSB_MAX.
- The VDDUSB supply both USB transceiver (USB OTG_HS and USB OTG_FS). If
only one USB transceiver is used in the application, the GPIOs associated to the
other USB transceiver are still supplied by VDDUSB.
- If USB (USB OTG_HS/OTG_FS) is not used, the associated GPIOs powered by
VDDUSB are operating between VDD_MIN and VDD_MAX.
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STM32F756xx
Figure 4. VDDUSB connected to VDD power supply
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2.17
Power supply supervisor
2.17.1
Internal reset ON
On packages embedding the PDR_ON pin, the power supply supervisor is enabled by
holding PDR_ON high. On the other packages, the power supply supervisor is always
enabled.
The device has an integrated power-on reset (POR)/ power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry. At power-on, POR/PDR is always active and
ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is
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reached, the option byte loading process starts, either to confirm or modify default BOR
thresholds, or to disable BOR permanently. Three BOR thresholds are available through
option bytes. The device remains in reset mode when VDD is below a specified threshold,
VPOR/PDR or VBOR, without the need for an external reset circuit.
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
2.17.2
Internal reset OFF

This feature is available only on packages featuring the PDR_ON pin. The internal power-on
reset (POR) / power-down reset (PDR) circuitry is disabled through the PDR_ON pin.
An external power supply supervisor should monitor VDD and should maintain the device in
reset mode as long as VDD is below a specified threshold. PDR_ON should be connected to
VSS. Refer to Figure 6: Power supply supervisor interconnection with internal reset OFF.
Figure 6. Power supply supervisor interconnection with internal reset OFF
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The VDD specified threshold, below which the device must be maintained under reset, is
1.7 V (see Figure 7).
A comprehensive set of power-saving mode allows to design low-power applications.
When the internal reset is OFF, the following integrated features are no more supported:
The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled
The brownout reset (BOR) circuitry must be disabled
The embedded programmable voltage detector (PVD) is disabled
VBAT functionality is no more available and VBAT pin should be connected to VDD.
All the packages, except for the LQFP100, allow to disable the internal reset through the
PDR_ON signal when connected to VSS.
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STM32F756xx
Figure 7. PDR_ON control with internal reset OFF
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2.18
Voltage regulator
The regulator has four operating modes:
2.18.1
Regulator ON
Main regulator mode (MR)
Low-power regulator (LPR)
Power-down
Regulator OFF
Regulator ON
On packages embedding the BYPASS_REG pin, the regulator is enabled by holding
BYPASS_REG low. On all other packages, the regulator is always enabled.
There are three power modes configured by software when the regulator is ON:
MR mode used in Run/sleep modes or in Stop modes
In Run/Sleep mode
The MR mode is used either in the normal mode (default mode) or the over-drive
mode (enabled by software). Different voltages scaling are provided to reach the
best compromise between the maximum frequency and dynamic power
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consumption. The over-drive mode allows operating at a higher frequency than
the normal mode for a given voltage scaling.
In Stop modes
The MR can be configured in two ways during Stop mode:
MR operates in normal mode (default mode of MR in Stop mode)
MR operates in under-drive mode (reduced leakage mode).
LPR is used in the Stop modes:

The LP regulator mode is configured by software when entering Stop mode.
Like the MR mode, the LPR can be configured in two ways during Stop mode:
LPR operates in normal mode (default mode when LPR is ON)
LPR operates in under-drive mode (reduced leakage mode).
Power-down is used in Standby mode.

The Power-down mode is activated only when entering in Standby mode. The regulator
output is in high impedance and the kernel circuitry is powered down, inducing zero
consumption. The contents of the registers and SRAM are lost.
Refer to Table 3 for a summary of voltage regulator modes versus device operating modes.
Two external ceramic capacitors should be connected on VCAP_1 and VCAP_2 pin.
All packages have the regulator ON feature.
Table 3. Voltage regulator configuration mode versus device operating mode(1)
Voltage regulator
configuration
Run mode
Sleep mode
Stop mode
Standby mode
Normal mode
MR
MR
MR or LPR
Over-drive
mode(2)
MR
MR
Under-drive mode
MR or LPR
Power-down mode
Yes
1. - means that the corresponding configuration is not available.

2. The over-drive mode is not available when VDD = 1.7 to 2.1 V.
2.18.2
Regulator OFF
This feature is available only on packages featuring the BYPASS_REG pin. The regulator is
disabled by holding BYPASS_REG high. The regulator OFF mode allows to supply
externally a V12 voltage source through VCAP_1 and VCAP_2 pins.
Since the internal voltage scaling is not managed internally, the external voltage value must
be aligned with the targeted maximum frequency.The two 2.2 F ceramic capacitors should
be replaced by two 100 nF decoupling capacitors.
When the regulator is OFF, there is no more internal monitoring on V12. An external power
supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin
should be used for this purpose, and act as power-on reset on V12 power domain.
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In regulator OFF mode, the following features are no more supported:
PA0 cannot be used as a GPIO pin since it allows to reset a part of the V12 logic power
domain which is not reset by the NRST pin.
As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As
a consequence, PA0 and NRST pins must be managed separately if the debug
connection under reset or pre-reset is required.
The over-drive and under-drive modes are not available.
The Standby mode is not available.

Figure 8. Regulator OFF
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The following conditions must be respected:
Note:
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VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for
VDD to reach 1.7 V, then PA0 should be kept low to cover both conditions: until VCAP_1
and VCAP_2 reach V12 minimum value and until VDD reaches 1.7 V (see Figure 9).
Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower
than the time for VDD to reach 1.7 V, then PA0 could be asserted low externally (see
Figure 10).
If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.7 V, then a
reset must be asserted on PA0 pin.
The minimum value of V12 depends on the maximum frequency targeted in the application.
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Functional overview
Figure 9. Startup in regulator OFF: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization
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1. This figure is valid whatever the internal reset mode (ON or OFF).
Figure 10. Startup in regulator OFF mode: fast VDD slope

- power-down reset risen before VCAP_1/VCAP_2 stabilization
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1. This figure is valid whatever the internal reset mode (ON or OFF).
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2.18.3
STM32F756xx
Regulator ON/OFF and internal reset ON/OFF availability

Table 4. Regulator ON/OFF and internal reset ON/OFF availability
Package
Regulator ON
Regulator OFF
Internal reset ON Internal reset OFF
LQFP100
LQFP144,
LQFP208
TFBGA100,
LQFP176,
WLCSP143,
UFBGA176,
TFBGA216
2.19
Yes
Yes
No
Yes
PDR_ON set to
VDD
Yes
PDR_ON set to
VSS
No
Yes
Yes
BYPASS_REG set BYPASS_REG set
to VDD
to VSS
Real-time clock (RTC), backup SRAM and backup registers

The RTC is an independent BCD timer/counter. It supports the following features:
Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
Two programmable alarms.
On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy.
Three anti-tamper detection pins with programmable filter.
Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode.
17-bit auto-reload wakeup timer (WUT) for periodic events with programmable
resolution and period.
The RTC and the 32 backup registers are supplied through a switch that takes power either
from the VDD supply when present or from the VBAT pin.
The backup registers are 32-bit registers used to store 128 bytes of user application data
when VDD power is not present. They are not reset by a system or power reset, or when the
device wakes up from Standby mode.
The RTC clock sources can be:
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A 32.768 kHz external crystal (LSE)
An external resonator or oscillator(LSE)
The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
The high-speed external clock (HSE) divided by 32.
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Functional overview
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in
all low-power modes.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wakeup the device from the low-power modes.
2.20
Low-power modes
The devices support three low-power modes to achieve the best compromise between lowpower consumption, short startup time and available wakeup sources:
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled.
The voltage regulator can be put either in main regulator mode (MR) or in low-power
mode (LPR). Both modes can be configured as follows (see Table 5: Voltage regulator
modes in Stop mode):
Normal mode (default mode when MR or LPR is enabled)
Under-drive mode.
The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm / wakeup /
tamper / time stamp events, the USB OTG FS/HS wakeup or the Ethernet wakeup and
LPTIM1 asynchronous interrupt).
Table 5. Voltage regulator modes in Stop mode
Voltage regulator
configuration
Main regulator (MR)
Low-power regulator (LPR)
Normal mode
MR ON
LPR ON
Under-drive mode
MR in under-drive mode
LPR in under-drive mode
Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.2 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain and the backup SRAM when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising or falling edge on one of the 6 WKUP pins (PA0, PA2, PC1, PC13, PI8, PI11),
or an RTC alarm / wakeup / tamper /time stamp event occurs.
The Standby mode is not supported when the embedded voltage regulator is bypassed
and the 1.2 V domain is controlled by an external power.
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2.21
STM32F756xx
VBAT operation
The VBAT pin allows to power the device VBAT domain from an external battery, an external
supercapacitor, or from VDD when no external battery and an external supercapacitor are
present.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
Note:
When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
When PDR_ON pin is connected to VSS (Internal Reset OFF), the VBAT functionality is no
more available and VBAT pin should be connected to VDD.
2.22
Timers and watchdogs

The devices include two advanced-control timers, eight general-purpose timers, two basic
timers and two watchdog timers.
All timer counters can be frozen in debug mode.
Table 6 compares the features of the advanced-control, general-purpose and basic timers.
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Table 6. Timer feature comparison
DMA
Capture/
request
compare
generation channels
Complem
entary
output
Max
Max
interfac
timer
e clock
clock
(MHz) (MHz)(1)
Timer
type
Timer
Counter Counter Prescaler

resolution
type
factor
Advance
d-control
TIM1,
TIM8
16-bit
Any
Up,
integer
Down,
between 1
Up/down
and 65536
Yes
Yes
108
216
32-bit
Any
Up,
integer
Down,
between 1
Up/down
and 65536
Yes
No
54
108/216
16-bit
Any
Up,
integer
Down,
between 1
Up/down
and 65536
Yes
No
54
108/216
16-bit
Up
Any
integer
between 1
and 65536
No
No
108
216
Up
Any
integer
between 1
and 65536
No
No
108
216
Up
Any
integer
between 1
and 65536
No
No
54
108/216
Up
Any
integer
between 1
and 65536
No
No
54
108/216
Up
Any
integer
between 1
and 65536
Yes
No
54
108/216
TIM2,
TIM5
TIM3,
TIM4
TIM9
General
purpose
TIM10,
TIM11
TIM12
TIM13,
TIM14
Basic
TIM6,
TIM7
16-bit
16-bit
16-bit
16-bit
1. The maximum timer clock is either 108 or 216 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR
register.
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2.22.1
STM32F756xx
Advanced-control timers (TIM1, TIM8)

The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators
multiplexed on 6 channels. They have complementary PWM outputs with programmable
inserted dead times. They can also be considered as complete general-purpose timers.
Their 4 independent channels can be used for:
Input capture
Output compare
PWM generation (edge- or center-aligned modes)
One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 and TIM8 support independent DMA request generation.
2.22.2
General-purpose timers (TIMx)

There are ten synchronizable general-purpose timers embedded in the STM32F756xx
devices (see Table 6 for differences).
TIM2, TIM3, TIM4, TIM5

The STM32F756xx include 4 full-featured general-purpose timers: TIM2, TIM5, TIM3,
and TIM4.The TIM2 and TIM5 timers are based on a 32-bit auto-reload
up/downcounter and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16bit auto-reload up/downcounter and a 16-bit prescaler. They all feature 4 independent
channels for input capture/output compare, PWM or one-pulse mode output. This gives
up to 16 input capture/output compare/PWMs on the largest packages.
The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the
other general-purpose timers and the advanced-control timers TIM1 and TIM8 via the
Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are
capable of handling quadrature (incremental) encoder signals and the digital outputs
from 1 to 4 hall-effect sensors.
TIM9, TIM10, TIM11, TIM12, TIM13, and TIM14

These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM10, TIM11, TIM13, and TIM14 feature one independent channel, whereas TIM9
and TIM12 have two independent channels for input capture/output compare, PWM or
one-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5
full-featured general-purpose timers. They can also be used as simple time bases.
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Functional overview
Basic timers TIM6 and TIM7

These timers are mainly used for DAC trigger and waveform generation. They can also be
used as a generic 16-bit time base.
TIM6 and TIM7 support independent DMA request generation.
2.22.4
Low-power timer (LPTIM1)

The low-power timer has an independent clock and is running also in Stop mode if it is
clocked by LSE, LSI or an external clock. It is able to wakeup the devices from Stop mode.
This low-power timer supports the following features:
2.22.5
16-bit up counter with 16-bit autoreload register
16-bit compare register
Configurable output: pulse, PWM
Continuous / one-shot mode
Selectable software / hardware input trigger
Selectable clock source:
Internal clock source: LSE, LSI, HSI or APB clock
External clock source over LPTIM input (working even with no internal clock source
running, used by the Pulse Counter Application)
Programmable digital glitch filter
Encoder mode
Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.
2.22.6
Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
2.22.7
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
A 24-bit downcounter
Autoreload capability
Maskable system interrupt generation when the counter reaches 0
Programmable clock source.
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Functional overview
2.23
STM32F756xx
Inter-integrated circuit interface (I2C)

The device embeds 4 I2C. Refer to Table 7: I2C implementation for the features
implementation.
The I2C bus interface handles communication between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
I2C-bus specification and user manual rev. 5 compatibility:
Slave and master modes, multimaster capability
Standard-mode (Sm), with a bitrate up to 100 kbit/s
Fast-mode (Fm), with a bitrate up to 400 kbit/s
7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
Programmable setup and hold times
Optional clock stretching
System Management Bus (SMBus) specification rev 2.0 compatibility:
Hardware PEC (Packet Error Checking) generation and verification with ACK
control
Address resolution protocol (ARP) support
SMBus alert
Power System Management Protocol (PMBusTM) specification rev 1.1 compatibility
Independent clock: a choice of independent clock sources allowing the I2C

communication speed to be independent from the PCLK reprogramming.
Programmable analog and digital noise filters
1-byte buffer with DMA capability

Table 7. I2C implementation
I2C features(1)
I2C1
I2C2
I2C3
I2C4
Standard-mode (up to 100 kbit/s)
Fast-mode (up to 400 kbit/s)
Programmable analog and digital noise filters
SMBus/PMBus hardware support
Independent clock
1. X: supported
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2.24
Functional overview
Universal synchronous/asynchronous receiver transmitters

(USART)
The device embeds USART. Refer to Table 8: USART implementation for the features
implementation.
The universal synchronous asynchronous receiver transmitter (USART) offers a flexible
means of full-duplex data exchange with external equipment requiring an industry standard
NRZ asynchronous serial data format.
The USART peripheral supports:
Full-duplex asynchronous communications
Configurable oversampling method by 16 or 8 to give flexibility between speed and

clock tolerance
Dual clock domain allowing convenient baud rate programming independent from the
PCLK reprogramming
A common programmable transmit and receive baud rate of up to 27 Mbit/s when

USART clock source is system clock frequency (Max is 216 MHz) and oversampling by
8 is used.
Auto baud rate detection
Programmable data word length (7 or 8 or 9 bits) word length
Programmable data order with MSB-first or LSB-first shifting
Programmable parity (odd, even, no parity)
Configurable stop bits (1 or 1.5 or 2 stop bits)
Synchronous mode and clock output for synchronous communications
Single-wire half-duplex communications
Separate signal polarity control for transmission and reception
Swappable Tx/Rx pin configuration
Hardware flow control for modem and RS-485 transceiver
Multiprocessor communications
LIN master synchronous break send capability and LIN slave break detection capability
IrDA SIR encoder decoder supporting 3/16 bit duration for normal mode
Smartcard mode ( T=0 and T=1 asynchronous protocols for Smartcards as defined in
the ISO/IEC 7816-3 standard )
Support for Modbus communication
The table below summarizes the implementation of all U(S)ARTs instances

Table 8. USART implementation
features(1)
USART1/2/3/6
Data Length
UART4/5/7/8
7, 8 and 9 bits
Hardware flow control for modem
Continuous communication using DMA
Multiprocessor communication
Synchronous mode
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Functional overview
STM32F756xx
Table 8. USART implementation (continued)
features(1)
USART1/2/3/6
UART4/5/7/8
Smartcard mode
Single-wire half-duplex communication
IrDA SIR ENDEC block
LIN mode
Dual clock domain
Receiver timeout interrupt
Modbus communication
Auto baud rate detection
Driver Enable
1. X: supported.
2.25
Serial peripheral interface (SPI)/inter- integrated sound

interfaces (I2S)
The devices feature up to six SPIs in slave and master modes in full-duplex and simplex
communication modes. SPI1, SPI4, SPI5, and SPI6 can communicate at up to 50 Mbits/s,
SPI2 and SPI3 can communicate at up to 25 Mbit/s. The 3-bit prescaler gives 8 master
mode frequencies and the frame is configurable from 4 to 16 bits. The SPI interfaces
support NSS pulse mode, TI mode and Hardware CRC calculation. All SPIs can be served
by the DMA controller.
Three standard I2S interfaces (multiplexed with SPI1, SPI2 and SPI3) are available. They
can be operated in master or slave mode, in simplex communication modes, and can be
configured to operate with a 16-/32-bit resolution as an input or output channel. Audio
sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of the
I2S interfaces is/are configured in master mode, the master clock can be output to the
external DAC/CODEC at 256 times the sampling frequency.
All I2Sx can be served by the DMA controller.
2.26
Serial audio interface (SAI)

The devices embed two serial audio interfaces.
The serial audio interface is based on two independent audio subblocks which can operate
as transmitter or receiver with their FIFO. Many audio protocols are supported by each
block: I2S standards, LSB or MSB-justified, PCM/DSP, TDM, AC97 and SPDIF output,
supporting audio sampling frequencies from 8 kHz up to 192 kHz. Both subblocks can be
configured in master or in slave mode.
In master mode, the master clock can be output to the external DAC/CODEC at 256 times of
the sampling frequency.
The two sub-blocks can be configured in synchronous mode when full-duplex mode is
required.
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Functional overview
SAI1 and SAI2 can be served by the DMA controller
2.27
SPDIFRX Receiver Interface (SPDIFRX)

The SPDIFRX peripheral, is designed to receive an S/PDIF flow compliant with IEC-60958
and IEC-61937. These standards support simple stereo streams up to high sample rate,
and compressed multi-channel surround sound, such as those defined by Dolby or DTS (up
to 5.1).
The main features of the SPDIFRX are the following:
Up to 4 inputs available
Automatic symbol rate detection
Maximum symbol rate: 12.288 MHz
Stereo stream from 32 to 192 kHz supported
Supports Audio IEC-60958 and IEC-61937, consumer applications
Parity bit management
Communication using DMA for audio samples
Communication using DMA for control and user channel information
Interrupt capabilities
The SPDIFRX receiver provides all the necessary features to detect the symbol rate, and
decode the incoming data stream. The user can select the wanted SPDIF input, and when a
valid signal will be available, the SPDIFRX will re-sample the incoming signal, decode the
manchester stream, recognize frames, sub-frames and blocks elements. It delivers to the
CPU decoded data, and associated status flags.
The SPDIFRX also offers a signal named spdif_frame_sync, which toggles at the S/PDIF
sub-frame rate that will be used to compute the exact sample rate for clock drift algorithms.
2.28
Audio PLL (PLLI2S)

The devices feature an additional dedicated PLL for audio I2S and SAI applications. It allows
to achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance, while using USB peripherals.
The PLLI2S configuration can be modified to manage an I2S/SAI sample rate change
without disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 KHz to 192 KHz.
In addition to the audio PLL, a master clock input pin can be used to synchronize the
I2S/SAI flow with an external PLL (or Codec output).
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Functional overview
2.29
STM32F756xx
Audio and LCD PLL(PLLSAI)

An additional PLL dedicated to audio and LCD-TFT is used for SAI1 peripheral in case the
PLLI2S is programmed to achieve another audio sampling frequency (49.152 MHz or
11.2896 MHz) and the audio application requires both sampling frequencies simultaneously.
The PLLSAI is also used to generate the LCD-TFT clock.
2.30
SD/SDIO/MMC card host interface (SDMMC)

An SDMMC host interface is available, that supports MultiMediaCard System Specification
Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface allows data transfer at up to 50 MHz, and is compliant with the SD Memory
card specification version 2.0.
The SDMMC card specification version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDMMC/MMC4.2 card at any one time and a
stack of MMC4.1 or previous.
The SDMMC can be served by the DMA controller
2.31
Ethernet MAC interface with dedicated DMA and IEEE 1588

support
The devices provide an IEEE-802.3-2002-compliant media access controller (MAC) for
ethernet LAN communications through an industry-standard medium-independent interface
(MII) or a reduced medium-independent interface (RMII). The microcontroller requires an
external physical interface device (PHY) to connect to the physical LAN bus (twisted-pair,
fiber, etc.). The PHY is connected to the device MII port using 17 signals for MII or 9 signals
for RMII, and can be clocked using the 25 MHz (MII) from the microcontroller.
The devices include the following features:
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Support of 10 and 100 Mbit/s rates
Dedicated DMA controller allowing high-speed transfers between the dedicated SRAM
and the descriptors
Tagged MAC frame support (VLAN support)
Half-duplex (CSMA/CD) and full-duplex operation
MAC control sublayer (control frames) support
32-bit CRC generation and removal
Several address filtering modes for physical and multicast address (multicast and
group addresses)
32-bit status code for each transmitted or received frame
Internal FIFOs to buffer transmit and receive frames. The transmit FIFO and the
receive FIFO are both 2 Kbytes.
Supports hardware PTP (precision time protocol) in accordance with IEEE 1588 2008
(PTP V2) with the time stamp comparator connected to the TIM2 input
Triggers interrupt when system time becomes greater than target time
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2.32
Functional overview
Controller area network (bxCAN)

The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1
Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as
extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive
FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one
CAN is used). 256 bytes of SRAM are allocated for each CAN.
2.33
Universal serial bus on-the-go full-speed (OTG_FS)

The device embeds an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 2.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG controller requires a dedicated 48 MHz clock that is
generated by a PLL connected to the HSE oscillator.
The major features are:
Combined Rx and Tx FIFO size of 1.28 Kbytes with dynamic FIFO sizing
Support of the session request protocol (SRP) and host negotiation protocol (HNP)
1 bidirectional control endpoint + 5 IN endpoints + 5 OUT endpoints
12 host channels with periodic OUT support
Software configurable to OTG1.3 and OTG2.0 modes of operation
USB 2.0 LPM (Link Power Management) support
Internal FS OTG PHY support
HNP/SNP/IP inside (no need for any external resistor)
For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
2.34
Universal serial bus on-the-go high-speed (OTG_HS)

The device embeds a USB OTG high-speed (up to 480 Mb/s) device/host/OTG peripheral.
The USB OTG HS supports both full-speed and high-speed operations. It integrates the
transceivers for full-speed operation (12 MB/s) and features a UTMI low-pin interface (ULPI)
for high-speed operation (480 MB/s). When using the USB OTG HS in HS mode, an
external PHY device connected to the ULPI is required.
The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG
2.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG controller requires a dedicated 48 MHz clock that is
generated by a PLL connected to the HSE oscillator.
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The major features are:
2.35
Combined Rx and Tx FIFO size of 4 Kbytes with dynamic FIFO sizing
Support of the session request protocol (SRP) and host negotiation protocol (HNP)
8 bidirectional endpoints
16 host channels with periodic OUT support
Software configurable to OTG1.3 and OTG2.0 modes of operation
USB 2.0 LPM (Link Power Management) support
Internal FS OTG PHY support
External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is
connected to the microcontroller ULPI port through 12 signals. It can be clocked using
the 60 MHz output.
Internal USB DMA
HNP/SNP/IP inside (no need for any external resistor)
for OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
High-definition multimedia interface (HDMI) - consumer

electronics control (CEC)
The device embeds a HDMI-CEC controller that provides hardware support for the
Consumer Electronics Control (CEC) protocol (Supplement 1 to the HDMI standard).
This protocol provides high-level control functions between all audiovisual products in an
environment. It is specified to operate at low speeds with minimum processing and memory
overhead. It has a clock domain independent from the CPU clock, allowing the HDMI-CEC
controller to wakeup the MCU from Stop mode on data reception.
2.36
Digital camera interface (DCMI)

The devices embed a camera interface that can connect with camera modules and CMOS
sensors through an 8-bit to 14-bit parallel interface, to receive video data. The camera
interface can sustain a data transfer rate up to 54 Mbyte/s at 54 MHz. It features:
2.37
Programmable polarity for the input pixel clock and synchronization signals
Parallel data communication can be 8-, 10-, 12- or 14-bit
Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2
progressive video, RGB 565 progressive video or compressed data (like JPEG)
Supports continuous mode or snapshot (a single frame) mode
Capability to automatically crop the image
Cryptographic acceleration
The devices embed a cryptographic accelerator. This cryptographic accelerator provides a
set of hardware acceleration for the advanced cryptographic algorithms usually needed to
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Functional overview
provide confidentiality, authentication, data integrity and non repudiation when exchanging
messages with a peer.
These algorithms consists of:

Encryption/Decryption
DES/TDES (data encryption standard/triple data encryption standard): ECB

(electronic codebook) and CBC (cipher block chaining) chaining algorithms, 64-,
128- or 192-bit key
AES (advanced encryption standard): ECB, CBC, GCM, CCM, and CTR (counter
mode) chaining algorithms, 128, 192 or 256-bit key
Universal hash
SHA-1 and SHA-2 (secure hash algorithms)
MD5
HMAC
The cryptographic accelerator supports DMA request generation.
2.38
Random number generator (RNG)

All devices embed an RNG that delivers 32-bit random numbers generated by an integrated
analog circuit.
2.39
General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
Fast I/O handling allowing maximum I/O toggling up to 108 MHz.
2.40
Analog-to-digital converters (ADCs)

Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16
external channels, performing conversions in the single-shot or scan mode. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
Simultaneous sample and hold
Interleaved sample and hold
The ADC can be served by the DMA controller. An analog watchdog feature allows very
precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4, TIM5, or TIM8 timer.
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Functional overview
2.41
STM32F756xx
Temperature sensor
The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.7 V and 3.6 V. The temperature sensor is internally
connected to the same input channel as VBAT, ADC1_IN18, which is used to convert the
sensor output voltage into a digital value. When the temperature sensor and VBAT
conversion are enabled at the same time, only VBAT conversion is performed.
As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.
2.42
Digital-to-analog converter (DAC)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs.
This dual digital Interface supports the following features:
two DAC converters: one for each output channel
8-bit or 12-bit monotonic output
left or right data alignment in 12-bit mode
synchronized update capability
noise-wave generation
triangular-wave generation
dual DAC channel independent or simultaneous conversions
DMA capability for each channel
external triggers for conversion
input voltage reference VREF+
Eight DAC trigger inputs are used in the device. The DAC channels are triggered through
the timer update outputs that are also connected to different DMA streams.
2.43
Serial wire JTAG debug port (SWJ-DP)

The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.
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2.44
Functional overview
Embedded Trace Macrocell

The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F756xx through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or
any other high-speed channel. Real-time instruction and data flow activity can be recorded
and then formatted for display on the host computer that runs the debugger software. TPA
hardware is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.
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Pinouts and pin description
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50/228
DocID027589 Rev 4
STM32F756xx
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Figure 16. STM32F756Bx LQFP208 pinout
069
DocID027589 Rev 4
51/228
89
STM32F756xx
Figure 17. STM32F756Ix UFBGA176 ballout

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52/228
DocID027589 Rev 4
STM32F756xx

Figure 18. STM32F756Nx TFBGA216 ballout

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DocID027589 Rev 4
53/228
89
STM32F756xx
Table 9. Legend/abbreviations used in the pinout table

Name
Abbreviation
Pin name
Unless otherwise specified in brackets below the pin name, the pin function during and after
reset is the same as the actual pin name
S
Supply pin
Input only pin
I/O
Input / output pin
FT
5 V tolerant I/O
TTa
3.3 V tolerant I/O directly connected to ADC
Dedicated BOOT pin
RST
Bidirectional reset pin with weak pull-up resistor
Pin type
I/O structure
Notes
Definition
Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset
Alternate
functions
Functions selected through GPIOx_AFR registers
Additional
functions
Functions directly selected/enabled through peripheral registers
Table 10. STM32F756xx pin and ball definition
D8
A2
A3
PE2
I/O FT
B3
C10
A1
A2
PE3
I/O FT
TRACED0, SAI1_SD_B,
FMC_A19, EVENTOUT
TRACED1, SPI4_NSS,
SAI1_FS_A, FMC_A20,
DCMI_D4, LCD_B0,
EVENTOUT
54/228
C3
B11
B1
LQFP208
A3
LQFP176
TRACECLK, SPI4_SCK,
SAI1_MCLK_A,
QUADSPI_BK1_IO2,
ETH_MII_TXD3,
FMC_A23, EVENTOUT
LQFP144
Alternate functions
LQFP100
Notes
I/O structure
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
UFBGA176
WLCSP143
TFBGA100
Pin Number
A1
PE4
I/O FT
DocID027589 Rev 4
Additional
functions
STM32F756xx

Table 10. STM32F756xx pin and ball definition (continued)
D3
B2
B1
PE5
I/O structure
Pin type
TFBGA216
LQFP208
LQFP176
UFBGA176
LQFP144
WLCSP143
D9
Pin
name
(function
after
reset)(1)
I/O FT
I/O FT
Notes
TFBGA100
LQFP100
Pin Number
Alternate functions
Additional
functions
TRACED2, TIM9_CH1,
SPI4_MISO,
SAI1_SCK_A, FMC_A21,
DCMI_D6, LCD_G0,
EVENTOUT
TRACED3, TIM1_BKIN2,
TIM9_CH2, SPI4_MOSI,
SAI1_SD_A,
SAI2_MCK_B, FMC_A22,
DCMI_D7, LCD_G1,
EVENTOUT
E3
E8
B3
B2
PE6
G6
VSS
F5
VDD
B2
C11
C1
C1
VBAT
D2
C2
PI8
EVENTOUT
RTC_TAMP2/
RTC_TS,WK
UP5
I/O FT (3)
EVENTOUT
RTC_TAMP1/
RTC_TS/RTC
_OUT,WKUP
4
(2)
I/O FT (3)
(2)
A2
D10
D1
D1
PC13
A1
D11
E1
E1
PC14(2)
OSC32_I I/O FT (3)
N(PC14)
EVENTOUT
OSC32_IN
PC15(2)
OSC32_
I/O FT (3)
OUT(PC
15)
EVENTOUT
OSC32_OUT
B1
E11
F1
10
10
F1
G5
VDD
D3
11
11
E4
PI9
I/O FT
CAN1_RX, FMC_D30,
LCD_VSYNC,
EVENTOUT
E3
12
12
D5
PI10
I/O FT
ETH_MII_RX_ER,
FMC_D31, LCD_HSYNC,
EVENTOUT
DocID027589 Rev 4
55/228
89
STM32F756xx
WLCSP143
LQFP144
UFBGA176
LQFP176
LQFP208
TFBGA216
E4
13
13
F3
PI11
E7
F2
14
14
F2
VSS
E10
F3
15
15
F4
VDD
F11
10
E2
16
16
D2
PF0
I/O FT
I2C2_SDA, FMC_A0,
EVENTOUT
E9
11
H3
17
17
E2
PF1
I/O FT
I2C2_SCL, FMC_A1,
EVENTOUT
F10
12
H2
18
18
G2
PF2
I/O FT
I2C2_SMBA, FMC_A2,
EVENTOUT
19
E3
PI12
I/O FT
LCD_HSYNC,
EVENTOUT
20
G3
PI13
I/O FT
LCD_VSYNC,
EVENTOUT
21
H3
PI14
I/O FT
LCD_CLK, EVENTOUT
G11
13
J2
19
22
H2
PF3
I/O FT
FMC_A3, EVENTOUT
ADC3_IN9
F9
14
J3
20
23
J2
PF4
I/O FT
FMC_A4, EVENTOUT
ADC3_IN14
F8
15
K3
21
24
K3
PF5
I/O FT
FMC_A5, EVENTOUT
ADC3_IN15
10
C2
H7
16
G2
22
25
H6
VSS
11
D2
17
G3
23
26
H5
VDD
TIM10_CH1, SPI5_NSS,
SAI1_SD_B, UART7_Rx,
QUADSPI_BK1_IO3,
EVENTOUT
ADC3_IN4
TIM11_CH1, SPI5_SCK,
SAI1_MCLK_B,
UART7_Tx,
QUADSPI_BK1_IO2,
EVENTOUT
ADC3_IN5
56/228
G10
F7
18
19
K2
K1
24
25
27
28
K2
K1
PF6
PF7
I/O FT
I/O FT
I/O FT
DocID027589 Rev 4
Notes
TFBGA100
I/O structure
LQFP100
Pin
name
(function
after
reset)(1)
Pin type
Pin Number
Alternate functions
Additional
functions
OTG_HS_ULPI_DIR,
EVENTOUT
WKUP6
STM32F756xx

20
L3
26
29
L3
PF8
I/O structure
Pin type
TFBGA216
LQFP208
LQFP176
UFBGA176
LQFP144
WLCSP143
H11
Pin
name
(function
after
reset)(1)
I/O FT
Notes
TFBGA100
LQFP100
Pin Number
Alternate functions
Additional
functions
SPI5_MISO,
SAI1_SCK_B,
UART7_RTS,
TIM13_CH1,
QUADSPI_BK1_IO0,
EVENTOUT
ADC3_IN6
ADC3_IN7
G8
21
L2
27
30
L2
PF9
I/O FT
SPI5_MOSI, SAI1_FS_B,
UART7_CTS,
TIM14_CH1,
QUADSPI_BK1_IO1,
EVENTOUT
G9
22
L1
28
31
L1
PF10
I/O FT
DCMI_D11, LCD_DE,
EVENTOUT
ADC3_IN8
12
C1
J11
23
G1
29
32
G1
PH0OSC_IN( I/O FT
PH0)
EVENTOUT
OSC_IN(4)
13
D1
H10
24
H1
30
33
H1
PH1OSC_OU I/O FT
T(PH1)
EVENTOUT
OSC_OUT(4)
14
E1
H9
25
J1
31
34
J1
RS
T
I/O FT
(4)
SAI2_FS_B,
OTG_HS_ULPI_STP,
FMC_SDNWE, LCD_R5,
EVENTOUT
ADC123_IN1
0
I/O FT
(4)
TRACED0,
SPI2_MOSI/I2S2_SD,
SAI1_SD_A, ETH_MDC,
EVENTOUT
ADC123_IN1
1,
RTC_TAMP3,
WKUP3
SPI2_MISO,
OTG_HS_ULPI_DIR,
ETH_MII_TXD2,
FMC_SDNE0,
EVENTOUT
ADC123_IN1
2
15
16
17
F1
F2
E2
H8
K11
J10
26
27
28
M2
M3
M4
32
33
34
35
36
37
M2
M3
M4
NRST
PC0
PC1
PC2
I/O
I/O FT (4)
DocID027589 Rev 4
57/228
89
STM32F756xx
Notes
I/O structure
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
LQFP208
LQFP176
UFBGA176
LQFP144
WLCSP143
TFBGA100
LQFP100
Pin Number
I/O FT (4)
Alternate functions
Additional
functions
SPI2_MOSI/I2S2_SD,
OTG_HS_ULPI_NXT,
ETH_MII_TX_CLK,
FMC_SDCKE0,
EVENTOUT
ADC123_IN1
3
18
F3
J9
29
M5
35
38
L4
PC3
G7
30
G3
36
39
J5
VDD
J6
VSS
19
G1
K10
31
M1
37
40
M1
VSSA
N1
N1
VREF-
20
L11
32
P1
38
41
P1
VREF+
21
H1
L10
33
R1
39
42
R1
VDDA
22
23
24
58/228
G2
H2
J2
K9
K8
L9
34
35
36
N3
N2
P2
F4
40
41
42
43
43
44
45
46
N3
N2
P2
K4
TIM2_CH1/TIM2_ETR,
TIM5_CH1, TIM8_ETR,
PA0USART2_CTS,
ADC123_IN0,
WKUP(P I/O FT (5)
UART4_TX, SAI2_SD_B,
WKUP1(4)
A0)
ETH_MII_CRS,
EVENTOUT
PA1
TIM2_CH2, TIM5_CH2,
USART2_RTS,
UART4_RX,
QUADSPI_BK1_IO3,
(4)
I/O FT
SAI2_MCK_B,
ETH_MII_RX_CLK/ETH_
RMII_REF_CLK,
LCD_R2, EVENTOUT
PA2
TIM2_CH3, TIM5_CH3,
TIM9_CH1, USART2_TX,
ADC123_IN2,
SAI2_SCK_B,
I/O FT (4)
WKUP2
ETH_MDIO, LCD_R1,
EVENTOUT
PH2
I/O FT
DocID027589 Rev 4
LPTIM1_IN2,
QUADSPI_BK2_IO0,
SAI2_SCK_B,
ETH_MII_CRS,
FMC_SDCKE0, LCD_R0,
EVENTOUT
ADC123_IN1
STM32F756xx

G4
44
47
J4
PH3
I/O FT
H4
45
48
H4
PH4
I/O FT
I2C2_SCL,
OTG_HS_ULPI_NXT,
EVENTOUT
J4
46
49
J3
PH5
I/O FT
I2C2_SDA, SPI5_NSS,
FMC_SDNWE,
EVENTOUT
TIM2_CH4, TIM5_CH4,
TIM9_CH2, USART2_RX,
I/O FT (4)
OTG_HS_ULPI_D0,
ETH_MII_COL, LCD_B5,
EVENTOUT
LQFP208
LQFP176
QUADSPI_BK2_IO1,
SAI2_MCK_B,
ETH_MII_COL,
FMC_SDNE0, LCD_R1,
EVENTOUT
LQFP144
Alternate functions
LQFP100
Notes
I/O structure
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
UFBGA176
WLCSP143
TFBGA100
Pin Number
Additional
functions
25
K2
M11
37
R2
47
50
R2
PA3
26
J1
38
51
K6
VSS
E6
N11
L4
48
L5
BYPASS
_REG
FT
27
K1
J8
39
K4
49
52
K5
VDD
TT (4)
a
SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS,
USART2_CK,
OTG_HS_SOF,
DCMI_HSYNC,
LCD_VSYNC,
EVENTOUT
ADC12_IN4,
DAC_OUT1
TT (4)
a
TIM2_CH1/TIM2_ETR,
TIM8_CH1N,
SPI1_SCK/I2S1_CK,
OTG_HS_ULPI_CK,
LCD_R4, EVENTOUT
ADC12_IN5,
DAC_OUT2
28
29
30
G3
H3
J3
M10
M9
N10
40
41
42
N4
P4
P3
50
51
52
53
54
55
N4
P4
P3
PA4
I/O
PA5
I/O
PA6
TIM1_BKIN, TIM3_CH1,
TIM8_BKIN, SPI1_MISO,
TIM13_CH1,
I/O FT (4)
DCMI_PIXCLK, LCD_G2,
EVENTOUT
DocID027589 Rev 4
ADC123_IN3
ADC12_IN6
59/228
89
STM32F756xx
31
32
K3
G4
L8
M8
43
44
R3
N5
53
54
56
57
R3
N5
Notes
I/O structure
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
LQFP208
LQFP176
UFBGA176
LQFP144
WLCSP143
TFBGA100
LQFP100
Pin Number
Alternate functions
Additional
functions
PA7
TIM1_CH1N, TIM3_CH2,
TIM8_CH1N,
SPI1_MOSI/I2S1_SD,
TIM14_CH1,
I/O FT (4)
ETH_MII_RX_DV/ETH_R
MII_CRS_DV,
FMC_SDNWE,
EVENTOUT
PC4
I2S1_MCK,
SPDIFRX_IN2,
I/O FT (4) ETH_MII_RXD0/ETH_RM ADC12_IN14
II_RXD0, FMC_SDNE0,
EVENTOUT
SPDIFRX_IN3,
ETH_MII_RXD1/ETH_RM
ADC12_IN15
II_RXD1, FMC_SDCKE0,
EVENTOUT
33
H4
N9
45
P5
55
58
P5
PC5
J7
59
L7
VDD
60
L6
VSS
34
35
J4
K4
N8
K7
46
47
R5
R4
56
57
61
62
R5
R4
I/O FT
(4)
ADC12_IN7
PB0
TIM8_CH2N,
UART4_CTS, LCD_R3,
(4)
I/O FT
OTG_HS_ULPI_D1,
ETH_MII_RXD2,
EVENTOUT
ADC12_IN8
PB1
TIM8_CH3N, LCD_R6,
I/O FT (4)
OTG_HS_ULPI_D2,
ETH_MII_RXD3,
EVENTOUT
ADC12_IN9
36
G5
L7
48
M6
58
63
M5
PB2
I/O FT
SAI1_SD_A,
SPI3_MOSI/I2S3_SD,
QUADSPI_CLK,
EVENTOUT
64
G4
PI15
I/O FT
LCD_R0, EVENTOUT
65
R6
PJ0
I/O FT
LCD_R1, EVENTOUT
66
R7
PJ1
I/O FT
LCD_R2, EVENTOUT
60/228
DocID027589 Rev 4
STM32F756xx

TFBGA100
WLCSP143
LQFP144
UFBGA176
LQFP176
LQFP208
TFBGA216
Notes
I/O structure
LQFP100
Pin
name
(function
after
reset)(1)
Pin type
Pin Number
Alternate functions
67
P7
PJ2
I/O FT
LCD_R3, EVENTOUT
68
N8
PJ3
I/O FT
LCD_R4, EVENTOUT
69
M9
PJ4
I/O FT
LCD_R5, EVENTOUT
M7
49
R6
59
70
P8
PF11
I/O FT
SPI5_MOSI, SAI2_SD_B,
FMC_SDNRAS,
DCMI_D12, EVENTOUT
N7
50
P6
60
71
M6
PF12
I/O FT
FMC_A6, EVENTOUT
51
M8
61
72
K7
VSS
52
N8
62
73
L8
VDD
K6
53
N6
63
74
N6
PF13
I/O FT
I2C4_SMBA, FMC_A7,
EVENTOUT
L6
54
R7
64
75
P6
PF14
I/O FT
I2C4_SCL, FMC_A8,
EVENTOUT
M6
55
P7
65
76
M8
PF15
I/O FT
I2C4_SDA, FMC_A9,
EVENTOUT
N6
56
N7
66
77
N7
PG0
I/O FT
FMC_A10, EVENTOUT
K5
57
M7
67
78
M7
PG1
I/O FT
FMC_A11, EVENTOUT
37
H5
L5
58
R8
68
79
R8
PE7
I/O FT
TIM1_ETR, UART7_Rx,
QUADSPI_BK2_IO0,
FMC_D4, EVENTOUT
38
J5
M5
59
P8
69
80
N9
PE8
I/O FT
TIM1_CH1N, UART7_Tx,
QUADSPI_BK2_IO1,
FMC_D5, EVENTOUT
39
K5
N5
60
P9
70
81
P9
PE9
I/O FT
TIM1_CH1, UART7_RTS,
QUADSPI_BK2_IO2,
FMC_D6, EVENTOUT
H3
61
M9
71
82
K8
VSS
J5
62
N9
72
83
L9
VDD
TIM1_CH2N,
UART7_CTS,
QUADSPI_BK2_IO3,
FMC_D7, EVENTOUT
40
G6
J4
63
R9
73
84
R9
PE10
I/O FT
DocID027589 Rev 4
Additional
functions
61/228
89
STM32F756xx
TFBGA100
WLCSP143
LQFP144
UFBGA176
LQFP176
LQFP208
TFBGA216
Notes
I/O structure
LQFP100
Pin
name
(function
after
reset)(1)
Pin type
Pin Number
Alternate functions
41
H6
K4
64
P10
74
85
P10
PE11
I/O FT
TIM1_CH2, SPI4_NSS,
SAI2_SD_B, FMC_D8,
LCD_G3, EVENTOUT
42
J6
L4
65
R10
75
86
R10
PE12
I/O FT
TIM1_CH3N, SPI4_SCK,
SAI2_SCK_B, FMC_D9,
LCD_B4, EVENTOUT
43
K6
N4
66
N11
76
87
R12
PE13
I/O FT
TIM1_CH3, SPI4_MISO,
SAI2_FS_B, FMC_D10,
LCD_DE, EVENTOUT
44
G7
M4
67
P11
77
88
P11
PE14
I/O FT
TIM1_CH4, SPI4_MOSI,
SAI2_MCK_B, FMC_D11,
LCD_CLK, EVENTOUT
45
H7
L3
68
R11
78
89
R11
PE15
I/O FT
TIM1_BKIN, FMC_D12,
LCD_R7, EVENTOUT
TIM2_CH3, I2C2_SCL,
SPI2_SCK/I2S2_CK,
USART3_TX,
OTG_HS_ULPI_D3,
ETH_MII_RX_ER,
LCD_G4, EVENTOUT
TIM2_CH4, I2C2_SDA,
USART3_RX,
OTG_HS_ULPI_D4,
ETH_MII_TX_EN/ETH_R
MII_TX_EN, LCD_G5,
EVENTOUT
46
J7
M3
69
R12
79
90
P12
PB10
I/O FT
47
K7
N3
70
R13
80
91
R13
PB11
48
F8
N2
71
M10
81
92
L11
VCAP_1
49
H2
93
K9
VSS
50
J6
72
N10
82
94
L10
VDD
95
M14
PJ5
LCD_R6, EVENTOUT
I2C2_SMBA, SPI5_SCK,
TIM12_CH1,
ETH_MII_RXD2,
FMC_SDNE1, DCMI_D8,
EVENTOUT
62/228
M11
83
96
P13
PH6
I/O FT
Additional
functions
I/O FT
I/O FT
DocID027589 Rev 4
STM32F756xx

N12
84
97
N13
PH7
I/O FT
M12
85
98
P14
PH8
I/O FT
I2C3_SDA, FMC_D16,
DCMI_HSYNC, LCD_R2,
EVENTOUT
LQFP208
LQFP176
I2C3_SCL, SPI5_MISO,
ETH_MII_RXD3,
FMC_SDCKE1,
DCMI_D9, EVENTOUT
LQFP144
Alternate functions
LQFP100
Notes
I/O structure
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
UFBGA176
WLCSP143
TFBGA100
Pin Number
Additional
functions
M13
86
99
N14
PH9
I/O FT
I2C3_SMBA,
TIM12_CH2, FMC_D17,
DCMI_D0, LCD_R3,
EVENTOUT
L13
87
100 P15
PH10
I/O FT
TIM5_CH1, I2C4_SMBA,
FMC_D18, DCMI_D1,
LCD_R4, EVENTOUT
L12
88
101 N15
PH11
I/O FT
TIM5_CH2, I2C4_SCL,
FMC_D19, DCMI_D2,
LCD_R5, EVENTOUT
K12
89
102 M15
PH12
I/O FT
TIM5_CH3, I2C4_SDA,
FMC_D20, DCMI_D3,
LCD_R6, EVENTOUT
H12
90
J12
91
51
52
K8
J8
M2
N1
73
74
P12
P13
92
93
K10
VSS
103 K11
VDD
TIM1_BKIN, I2C2_SMBA,
SPI2_NSS/I2S2_WS,
USART3_CK, CAN2_RX,
OTG_HS_ULPI_D5,
ETH_MII_TXD0/ETH_RM
II_TXD0, OTG_HS_ID,
EVENTOUT
TIM1_CH1N,
SPI2_SCK/I2S2_CK,
USART3_CTS,
OTG_HS_VB
CAN2_TX,
US
OTG_HS_ULPI_D6,
ETH_MII_TXD1/ETH_RM
II_TXD1, EVENTOUT
104 L13
105 K14
PB12
PB13
I/O FT
I/O FT
DocID027589 Rev 4
63/228
89
STM32F756xx
H10
K3
R14
94
106 R14
PB14
I/O structure
Pin type
TFBGA216
LQFP208
LQFP176
UFBGA176
LQFP144
75
Pin
name
(function
after
reset)(1)
I/O FT
Notes
53
WLCSP143
LQFP100
TFBGA100
Pin Number
Alternate functions
Additional
functions
TIM1_CH2N,
TIM8_CH2N,
SPI2_MISO,
USART3_RTS,
TIM12_CH1,
OTG_HS_DM,
EVENTOUT
54
G10
J3
76
R15
95
107 R15
PB15
I/O FT
RTC_REFIN,
TIM1_CH3N,
TIM8_CH3N,
SPI2_MOSI/I2S2_SD,
TIM12_CH2,
OTG_HS_DP,
EVENTOUT
55
K9
L2
77
P15
96
108 L15
PD8
I/O FT
USART3_TX,
SPDIFRX_IN11,
FMC_D13, EVENTOUT
56
J9
M1
78
P14
97
109 L14
PD9
I/O FT
USART3_RX, FMC_D14,
EVENTOUT
57
H9
H4
79
N15
98
110 K15
PD10
I/O FT
USART3_CK, FMC_D15,
LCD_B3, EVENTOUT
I2C4_SMBA,
USART3_CTS,
QUADSPI_BK1_IO0,
SAI2_SD_A,
FMC_A16/FMC_CLE,
EVENTOUT
TIM4_CH1, LPTIM1_IN1,
I2C4_SCL,
USART3_RTS,
QUADSPI_BK1_IO1,
SAI2_FS_A,
FMC_A17/FMC_ALE,
EVENTOUT
TIM4_CH2,
LPTIM1_OUT, I2C4_SDA,
QUADSPI_BK1_IO3,
SAI2_SCK_A, FMC_A18,
EVENTOUT
58
59
60
G9
K10
J10
64/228
K2
H6
H5
80
81
82
N14
99
111 N10
N13 100 112 M10
M15 101 113 M11
PD11
PD12
PD13
I/O FT
I/O FT
I/O FT
DocID027589 Rev 4
STM32F756xx

Pin Number
I/O structure
Notes
84
J13 103 115
J11
VDD
J2
85
M14 104 116
L12
PD14
I/O FT
TIM4_CH3, UART8_CTS,
FMC_D0, EVENTOUT
G8
K1
86
L14 105 117 K13
PD15
I/O FT
FMC_D1, EVENTOUT
118 K12
PJ6
I/O FT
LCD_R7, EVENTOUT
119
J12
PJ7
I/O FT
LCD_G0, EVENTOUT
120 H12
PJ8
I/O FT
LCD_G1, EVENTOUT
121
J13
PJ9
I/O FT
LCD_G2, EVENTOUT
122 H13
PJ10
I/O FT
LCD_G3, EVENTOUT
123 G12
PJ11
I/O FT
LCD_G4, EVENTOUT
124 H11
VDD
125 H10
VSS
126 G13
PK0
I/O FT
LCD_G5, EVENTOUT
127 F12
PK1
I/O FT
LCD_G6, EVENTOUT
128 F13
PK2
I/O FT
LCD_G7, EVENTOUT
J1
87
L15 106 129 M13
PG2
I/O FT
FMC_A12, EVENTOUT
G3
88
K15 107 130 M12
PG3
I/O FT
FMC_A13, EVENTOUT
G5
89
K14 108 131 N12
PG4
I/O FT
FMC_A14/FMC_BA0,
EVENTOUT
G6
90
K13 109 132 N11
PG5
I/O FT
FMC_A15/FMC_BA1,
EVENTOUT
G4
91
J15
110 133
J15
PG6
I/O FT
DCMI_D12, LCD_R7,
EVENTOUT
H1
92
J14
111
J14
PG7
I/O FT
USART6_CK, FMC_INT,
DCMI_D13, LCD_CLK,
EVENTOUT
83
L1
61
H8
62
134
TFBGA216
LQFP208
LQFP176
UFBGA176
VSS
LQFP144
J10
WLCSP143
102 114
TFBGA100
Alternate functions
LQFP100
Pin type
Pin
name
(function
after
reset)(1)
DocID027589 Rev 4
Additional
functions
65/228
89
STM32F756xx
G2
93
H14 112 135 H14
PG8
D2
94
G12 113 136 G10
VSS
F6
G1
95
H13 114 137 G11 VDDUSB
63
64
F10
E10
65
66
67
68
66/228
F9
E9
D9
C9
F2
F3
E4
E3
F1
E2
96
97
98
99
H15 115 138 H15
G15 116 139 G15
G14 117 140 G14
F14 118 141 F14
100 F15 119 142 F15
101 E15 120 143 E15
PC6
PC7
PC8
PC9
PA8
PA9
I/O FT
Notes
I/O structure
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
LQFP208
LQFP176
UFBGA176
LQFP144
WLCSP143
LQFP100
TFBGA100
Pin Number
Alternate functions
Additional
functions
SPI6_NSS,
SPDIFRX_IN2,
USART6_RTS,
ETH_PPS_OUT,
FMC_SDCLK,
EVENTOUT
TIM3_CH1, TIM8_CH1,
I2S2_MCK, USART6_TX,
SDMMC1_D6, DCMI_D0,
LCD_HSYNC,
EVENTOUT
TIM3_CH2, TIM8_CH2,
I2S3_MCK, USART6_RX,
SDMMC1_D7, DCMI_D1,
LCD_G6, EVENTOUT
TRACED1, TIM3_CH3,
USART6_CK,
SDMMC1_D0, DCMI_D2,
EVENTOUT
MCO2, TIM3_CH4,
TIM8_CH4, I2C3_SDA,
I2S_CKIN, UART5_CTS,
QUADSPI_BK1_IO0,
SDMMC1_D1, DCMI_D3,
EVENTOUT
MCO1, TIM1_CH1,
TIM8_BKIN2, I2C3_SCL,
USART1_CK,
OTG_FS_SOF, LCD_R6,
EVENTOUT
SPI2_SCK/I2S2_CK,
USART1_TX, DCMI_D0,
EVENTOUT
OTG_FS_VB
US
I/O FT
I/O FT
I/O FT
I/O FT
I/O FT
I/O FT
DocID027589 Rev 4
STM32F756xx

C10
D4
103 C15 122 145 C15
PA10
PA11
I/O structure
Alternate functions
Additional
functions
TIM1_CH3, USART1_RX,
OTG_FS_ID, DCMI_D1,
EVENTOUT
TIM1_CH4,
USART1_CTS,
CAN1_RX, OTG_FS_DM,
LCD_R4, EVENTOUT
I/O FT
TIM1_ETR,
USART1_RTS,
SAI2_FS_B, CAN1_TX,
OTG_FS_DP, LCD_R5,
EVENTOUT
I/O FT
I/O FT
71
B10
E1
104 B15 123 146 B15
72
A10
D3
105 A15 124 147 A15
PA13(JT
MSI/O FT
SWDIO)
JTMS-SWDIO,
EVENTOUT
73
E7
D1
106 F13 125 148 E11
VCAP_2
74
E5
D2
107 F12 126 149 F10
VSS
75
F5
C1
108 G13 127 150 F11
VDD
E12 128 151 E12
PH13
I/O FT
TIM8_CH1N, CAN1_TX,
FMC_D21, LCD_G2,
EVENTOUT
E13 129 152 E13
PH14
I/O FT
TIM8_CH2N, FMC_D22,
DCMI_D4, LCD_G3,
EVENTOUT
D13 130 153 D13
PH15
I/O FT
TIM8_CH3N, FMC_D23,
DCMI_D11, LCD_G4,
EVENTOUT
TIM5_CH4,
SPI2_NSS/I2S2_WS,
FMC_D24, DCMI_D13,
LCD_G5, EVENTOUT
TIM8_BKIN2,
SPI2_SCK/I2S2_CK,
FMC_D25, DCMI_D8,
LCD_G6, EVENTOUT
E14 131 154 E14
D14 132 155 D14
PA12
Notes
70
Pin
name
(function
after
reset)(1)
Pin type
102 D15 121 144 D15
TFBGA216
LQFP144
D5
LQFP208
WLCSP143
D10
LQFP176
TFBGA100
69
UFBGA176
LQFP100
Pin Number
PI0
PI1
I/O FT
I/O FT
DocID027589 Rev 4
67/228
89
STM32F756xx
PI2
I/O structure
I/O FT
Alternate functions
Additional
functions
TIM8_CH4, SPI2_MISO,
FMC_D26, DCMI_D9,
LCD_G7, EVENTOUT
TIM8_ETR,
SPI2_MOSI/I2S2_SD,
FMC_D27, DCMI_D10,
EVENTOUT
C13 134 157 C13
PI3
F5
D9
135
VSS
A1
C9
136 158 E10
VDD
76
A9
B1
JTCK-SWCLK,
EVENTOUT
JTDI,
TIM2_CH1/TIM2_ETR,
HDMI-CEC,
SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS,
UART4_RTS,
EVENTOUT
SPI3_SCK/I2S3_CK,
USART3_TX,
UART4_TX,
QUADSPI_BK1_IO1,
SDMMC1_D2, DCMI_D8,
LCD_R2, EVENTOUT
SPI3_MISO,
USART3_RX,
UART4_RX,
QUADSPI_BK2_NCS,
SDMMC1_D3, DCMI_D4,
EVENTOUT
TRACED3,
SPI3_MOSI/I2S3_SD,
USART3_CK,
UART5_TX,
SDMMC1_CK, DCMI_D9,
EVENTOUT
77
78
79
80
68/228
A8
B9
B8
C8
C2
A2
B2
C3
F9
109 A14 137 159 A14
110 A13 138 160 A13
111 B14 139 161 B14
112 B13 140 162 B13
113 A12 141 163 A12
I/O FT
Notes
C14 133 156 C14
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
LQFP144
LQFP208
WLCSP143
LQFP176
TFBGA100
UFBGA176
LQFP100
Pin Number
PA14(JT
CKI/O FT
SWCLK)
PA15(JT
I/O FT
DI)
PC10
PC11
PC12
I/O FT
I/O FT
I/O FT
DocID027589 Rev 4
STM32F756xx

Notes
I/O structure
B3
114 B12 142 164 B12
PD0
I/O FT
CAN1_RX, FMC_D2,
EVENTOUT
82
E8
C4
115 C12 143 165 C12
PD1
I/O FT
CAN1_TX, FMC_D3,
EVENTOUT
TRACED2, TIM3_ETR,
UART5_RX,
SDMMC1_CMD,
DCMI_D11, EVENTOUT
83
B7
A3
TFBGA216
LQFP144
D8
LQFP208
WLCSP143
81
LQFP176
TFBGA100
Alternate functions
UFBGA176
LQFP100
Pin
name
(function
after
reset)(1)
Pin type
Pin Number
116 D12 144 166 D12
PD2
I/O FT
Additional
functions
84
C7
B4
117 D11 145 167 C11
PD3
I/O FT
SPI2_SCK/I2S2_CK,
USART2_CTS,
FMC_CLK, DCMI_D5,
LCD_G7, EVENTOUT
85
D7
B5
118 D10 146 168 D11
PD4
I/O FT
USART2_RTS,
FMC_NOE, EVENTOUT
86
B6
A4
119 C11 147 169 C10
PD5
I/O FT
USART2_TX, FMC_NWE,
EVENTOUT
120
D8
148 170
F8
VSS
C5
121
C8
149 171
E9
VDD
87
C6
F4
122 B11 150 172 B11
PD6
I/O FT
SPI3_MOSI/I2S3_SD,
SAI1_SD_A,
USART2_RX,
FMC_NWAIT, DCMI_D10,
LCD_B2, EVENTOUT
88
D6
A5
123 A11 151 173 A11
PD7
I/O FT
USART2_CK,
SPDIFRX_IN0,
FMC_NE1, EVENTOUT
174 B10
PJ12
I/O FT
LCD_B0, EVENTOUT
175
B9
PJ13
I/O FT
LCD_B1, EVENTOUT
176
C9
PJ14
I/O FT
LCD_B2, EVENTOUT
177 D10
PJ15
I/O FT
LCD_B3, EVENTOUT
DocID027589 Rev 4
69/228
89
STM32F756xx
E5
124 C10 152 178
D9
PG9
I/O FT
C6
125 B10 153 179
C8
PG10
I/O FT
LCD_G3, SAI2_SD_B,
FMC_NE3, DCMI_D2,
LCD_B2, EVENTOUT
SPDIFRX_IN0,
ETH_MII_TX_EN/ETH_R
MII_TX_EN, DCMI_D3,
LCD_B3, EVENTOUT
LPTIM1_IN1,
SPI6_MISO,
SPDIFRX_IN1,
USART6_RTS, LCD_B4,
FMC_NE4, LCD_B1,
EVENTOUT
TRACED0, LPTIM1_OUT,
SPI6_SCK,
USART6_CTS,
ETH_MII_TXD0/ETH_RM
II_TXD0, FMC_A24,
LCD_R0, EVENTOUT
TRACED1, LPTIM1_ETR,
SPI6_MOSI,
USART6_TX,
QUADSPI_BK2_IO3,
ETH_MII_TXD1/ETH_RM
II_TXD1, FMC_A25,
LCD_B0, EVENTOUT
--
B6
A6
D6
126
127
128
B9
B8
A8
LQFP208
LQFP176
SPDIFRX_IN3,
USART6_RX,
QUADSPI_BK2_IO2,
SAI2_FS_B,
FMC_NE2/FMC_NCE,
DCMI_VSYNC,
EVENTOUT
LQFP144
Alternate functions
LQFP100
Notes
I/O structure
Pin
name
(function
after
reset)(1)
Pin type
TFBGA216
UFBGA176
WLCSP143
TFBGA100
Pin Number
154 180
155 181
156 182
B8
C7
B3
PG11
PG12
PG13
I/O FT
I/O FT
I/O FT
F6
129
A7
157 183
A4
PG14
130
D7
158 184
F7
VSS
E6
131
C7
159 185
E8
VDD
70/228
I/O FT
Additional
functions
DocID027589 Rev 4
STM32F756xx

TFBGA100
WLCSP143
LQFP144
UFBGA176
LQFP176
LQFP208
TFBGA216
Notes
I/O structure
LQFP100
Pin
name
(function
after
reset)(1)
Pin type
Pin Number
Alternate functions
186
D8
PK3
I/O FT
LCD_B4, EVENTOUT
187
D7
PK4
I/O FT
LCD_B5, EVENTOUT
188
C6
PK5
I/O FT
LCD_B6, EVENTOUT
189
C5
PK6
I/O FT
LCD_B7, EVENTOUT
190
C4
PK7
I/O FT
LCD_DE, EVENTOUT
A7
132
B7
160 191
B7
PG15
I/O FT
USART6_CTS,
FMC_SDNCAS,
DCMI_D13, EVENTOUT
B7
PB3(JTD
133 A10 161 192 A10 O/TRAC I/O FT
ESWO)
JTDO/TRACESWO,
TIM2_CH2,
SPI1_SCK/I2S1_CK,
SPI3_SCK/I2S3_CK,
EVENTOUT
C7
PB4(NJT
I/O FT
RST)
NJTRST, TIM3_CH1,
SPI1_MISO, SPI3_MISO,
SPI2_NSS/I2S2_WS,
EVENTOUT
SPI1_MOSI/I2S1_SD,
SPI3_MOSI/I2S3_SD,
CAN2_RX,
OTG_HS_ULPI_D7,
ETH_PPS_OUT,
FMC_SDCKE1,
DCMI_D10, EVENTOUT
TIM4_CH1, HDMI-CEC,
I2C1_SCL, USART1_TX,
CAN2_TX,
QUADSPI_BK1_NCS,
FMC_SDNE1, DCMI_D5,
EVENTOUT
TIM4_CH2, I2C1_SDA,
USART1_RX, FMC_NL,
DCMI_VSYNC,
EVENTOUT
VPP
89
90
91
92
A7
A6
C5
B5
C8
A8
134
135
136
A9
A6
B6
162 193
163 194
164 195
A9
A8
B6
PB5
PB6
93
A5
B8
137
B5
165 196
B5
PB7
94
D5
C9
138
D6
166 197
E6
BOOT
I/O FT
I/O FT
I/O FT
DocID027589 Rev 4
Additional
functions
71/228
89
STM32F756xx
96
B4
A4
B9
139
140
A5
B4
167 198
168 199
A7
B4
PB8
PB9
I/O structure
Pin type
TFBGA216
LQFP208
LQFP176
UFBGA176
LQFP144
WLCSP143
A9
Pin
name
(function
after
reset)(1)
I/O FT
I/O FT
Notes
95
TFBGA100
LQFP100
Pin Number
Alternate functions
Additional
functions
TIM4_CH3, TIM10_CH1,
I2C1_SCL, CAN1_RX,
ETH_MII_TXD3,
SDMMC1_D4, DCMI_D6,
LCD_B6, EVENTOUT
TIM4_CH4, TIM11_CH1,
I2C1_SDA,
SPI2_NSS/I2S2_WS,
CAN1_TX, SDMMC1_D5,
DCMI_D7, LCD_B7,
EVENTOUT
97
D4
B10 141
A4
169 200
A6
PE0
I/O FT
TIM4_ETR,
LPTIM1_ETR,
UART8_Rx,
SAI2_MCK_A,
FMC_NBL0, DCMI_D2,
EVENTOUT
98
C4
A10 142
A3
170 201
A5
PE1
I/O FT
LPTIM1_IN2, UART8_Tx,
FMC_NBL1, DCMI_D3,
EVENTOUT
99
E4
202
F6
VSS
F7
A11 143
C6
171 203
E5
PDR_ON
100
F4
D7
C5
172 204
E7
VDD
TIM8_BKIN,
SAI2_MCK_A,
FMC_NBL2, DCMI_D5,
LCD_B4, EVENTOUT
TIM8_CH1,
SAI2_SCK_A,
FMC_NBL3,
DCMI_VSYNC, LCD_B5,
EVENTOUT
72/228
144
D5
D4
C4
173 205
174 206
C3
D3
PI4
PI5
I/O FT
I/O FT
DocID027589 Rev 4
STM32F756xx

LQFP144
UFBGA176
LQFP176
Notes
I/O structure
WLCSP143
C3
175 207
D6
PI6
I/O FT
TIM8_CH2, SAI2_SD_A,
FMC_D28, DCMI_D6,
LCD_B6, EVENTOUT
C2
176 208
D4
PI7
I/O FT
TIM8_CH3, SAI2_FS_A,
FMC_D29, DCMI_D7,
LCD_B7, EVENTOUT
TFBGA216
TFBGA100
Alternate functions
LQFP208
LQFP100
Pin
name
(function
after
reset)(1)
Pin type
Pin Number
Additional
functions
1. Function availability depends on the chosen device.

2. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF.
- These I/Os must not be used as a current source (e.g. to drive an LED).
3. Main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even after
reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the RTC
register description sections in the STM32F75xxx and STM32F74xxx reference manual.
4. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0 and PH1).
5. If the device is delivered in an WLCSP143, UFBGA176, LQFP176, TFBGA100 or TFBGA216 package, and the
BYPASS_REG pin is set to VDD (Regulator OFF/internal reset ON mode), then PA0 is used as an internal Reset (active
low).
DocID027589 Rev 4
73/228
89
STM32F756xx
Table 11. FMC pin definition
74/228
Pin name
NOR/PSRAM/SR
AM
NOR/PSRAM
Mux
NAND16
SDRAM
PF0
A0
A0
PF1
A1
A1
PF2
A2
A2
PF3
A3
A3
PF4
A4
A4
PF5
A5
A5
PF12
A6
A6
PF13
A7
A7
PF14
A8
A8
PF15
A9
A9
PG0
A10
A10
PG1
A11
A11
PG2
A12
A12
PG3
A13
PG4
A14
BA0
PG5
A15
BA1
PD11
A16
A16
CLE
PD12
A17
A17
ALE
PD13
A18
A18
PE3
A19
A19
PE4
A20
A20
PE5
A21
A21
PE6
A22
A22
PE2
A23
A23
PG13
A24
A24
PG14
A25
A25
PD14
D0
DA0
D0
D0
PD15
D1
DA1
D1
D1
PD0
D2
DA2
D2
D2
PD1
D3
DA3
D3
D3
PE7
D4
DA4
D4
D4
PE8
D5
DA5
D5
D5
PE9
D6
DA6
D6
D6
PE10
D7
DA7
D7
D7
DocID027589 Rev 4
STM32F756xx

Table 11. FMC pin definition (continued)
Pin name
NOR/PSRAM/SR
AM
NOR/PSRAM
Mux
NAND16
SDRAM
PE11
D8
DA8
D8
D8
PE12
D9
DA9
D9
D9
PE13
D10
DA10
D10
D10
PE14
D11
DA11
D11
D11
PE15
D12
DA12
D12
D12
PD8
D13
DA13
D13
D13
PD9
D14
DA14
D14
D14
PD10
D15
DA15
D15
D15
PH8
D16
D16
PH9
D17
D17
PH10
D18
D18
PH11
D19
D19
PH12
D20
D20
PH13
D21
D21
PH14
D22
D22
PH15
D23
D23
PI0
D24
D24
PI1
D25
D25
PI2
D26
D26
PI3
D27
D27
PI6
D28
D28
PI7
D29
D29
PI9
D30
D30
PI10
D31
D31
PD7
NE1
NE1
PG9
NE2
NE2
NCE
PG10
NE3
NE3
PG11
PG12
NE4
NE4
PD3
CLK
CLK
PD4
NOE
NOE
NOE
PD5
NWE
NWE
NWE
PD6
NWAIT
NWAIT
NWAIT
PB7
NADV
NADV
DocID027589 Rev 4
75/228
89
STM32F756xx
Table 11. FMC pin definition (continued)
76/228
Pin name
NOR/PSRAM/SR
AM
NOR/PSRAM
Mux
NAND16
SDRAM
PF6
PF7
PF8
PF9
PF10
PG6
PG7
INT
PE0
NBL0
NBL0
NBL0
PE1
NBL1
NBL1
NBL1
PI4
NBL2
NBL2
PI5
NBL3
NBL3
PG8
SDCLK
PC0
SDNWE
PF11
SDNRAS
PG15
SDNCAS
PH2
SDCKE0
PH3
SDNE0
PH6
SDNE1
PH7
SDCKE1
PH5
SDNWE
PC2
SDNE0
PC3
SDCKE0
PB5
SDCKE1
PB6
SDNE1
DocID027589 Rev 4
AF0
AF1
Port
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
AF7
AF8
AF9
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
USART2
_CTS
UART4_
TX
UART4_
RX
QUADSP
I_BK1_IO
3
AF10
AF12
TIM2_C
H1/TIM2
_ETR
TIM5_C
H1
PA1
TIM2_C
H2
TIM5_C
H2
USART2
_RTS
PA2
TIM2_C
H3
TIM5_C
H3
TIM9_CH
1
USART2
_TX
SAI2_SC
K_B
PA3
TIM2_C
H4
TIM5_C
H4
TIM9_CH
2
USART2
_RX
PA4
SPI1_NS SPI3_NS
S/I2S1_ S/I2S3_
WS
WS
USART2
_CK
PA5
TIM2_C
H1/TIM2
_ETR
TIM8_CH
1N
SPI1_SC
K/I2S1_
CK
PA6
TIM1_B
KIN
TIM3_C
H1
TIM8_BKI
N
SPI1_MI
SO
PA7
TIM1_C
H1N
TIM3_C
H2
TIM8_CH
1N
SPI1_M
OSI/I2S1
_SD
PA8
MCO1
TIM1_C
H1
TIM8_BKI
N2
I2C3_SC
L
PA9
TIM1_C
H2
I2C3_SM
BA
SPI2_SC
K/I2S2_
CK
PA10
TIM1_C
H3
PA11
TIM1_C
H4
AF13
AF14
AF15
DCMI
LCD
SYS
DocID027589 Rev 4
77/228
SAI2_SD_ ETH_MII_
B
CRS
EVEN
TOUT
SAI2_MC
K_B
ETH_MII_
RX_CLK/
ETH_RMI
I_REF_C
LK
LCD_R2
EVEN
TOUT
ETH_MDI
O
LCD_R1
EVEN
TOUT
OTG_HS_ ETH_MII_
ULPI_D0
COL
LCD_B5
EVEN
TOUT
OTG_HS
_SOF
DCMI_H
SYNC
LCD_VS
YNC
EVEN
TOUT
OTG_HS_
ULPI_CK
LCD_R4
EVEN
TOUT
TIM13_C
H1
DCMI_PI
XCLK
LCD_G2
EVEN
TOUT
TIM14_C
H1
EVEN
TOUT
USART1
_CK
OTG_FS_
SOF
LCD_R6
EVEN
TOUT
USART1
_TX
DCMI_D
0
EVEN
TOUT
USART1
_RX
OTG_FS_
ID
DCMI_D
1
EVEN
TOUT
USART1
_CTS
CAN1_R
X
OTG_FS_
DM
LCD_R4
EVEN
TOUT
ETH_MII_
RX_DV/E FMC_SD
TH_RMII_
NWE
CRS_DV
TIM1/2
TIM8_ET
R
AF11
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
14/QUAD TG2_HS/ OTG1_FS
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
SYS
PA0
Port A
AF2
STM32F756xx
Table 12. STM32F756xx alternate function mapping
AF0
AF1
Port
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
TIM1/2
PA12
TIM1_ET
R
USART1
_RTS
SAI2_FS
_B
CAN1_T
X
OTG_FS_
DP
LCD_R5
EVEN
TOUT
PA13
JTMSSWDIO
EVEN
TOUT
PA14
JTCKSWCLK
EVEN
TOUT
PA15
JTDI
TIM2_C
H1/TIM2
_ETR
HDMICEC
UART4_
RTS
EVEN
TOUT
PB0
TIM1_C
H2N
TIM3_C
H3
TIM8_CH
2N
UART4_
CTS
LCD_R3
OTG_HS_ ETH_MII_
ULPI_D1
RXD2
EVEN
TOUT
PB1
TIM1_C
H3N
TIM3_C
H4
TIM8_CH
3N
LCD_R6
OTG_HS_ ETH_MII_
ULPI_D2
RXD3
EVEN
TOUT
PB2
SAI1_SD
_A
SPI3_MO
SI/I2S3_
SD
PB3
JTDO/T
RACES
WO
TIM2_C
H2
SPI1_SC SPI3_SC
K/I2S1_ K/I2S3_
CK
CK
PB4
NJTRST
TIM3_C
H1
SPI1_MI
SO
PB5
TIM3_C
H2
I2C1_SM
BA
PB6
TIM4_C
H1
HDMICEC
I2C1_SC
L
PB7
TIM4_C
H2
I2C1_SD
A
PB8
TIM4_C
H3
TIM10_C
H1
I2C1_SC
L
SPI1_NS SPI3_NS
S/I2S1_ S/I2S3_
WS
WS
DocID027589 Rev 4
QUADSP
I_CLK
EVEN
TOUT
EVEN
TOUT
SPI2_NS
S/I2S2_
WS
EVEN
TOUT
CAN2_R
X
OTG_HS_ ETH_PPS FMC_SD

ULPI_D7
_OUT
CKE1
DCMI_D
10
EVEN
TOUT
USART1
_TX
CAN2_T
X
QUADSPI
_BK1_NC
S
FMC_SD
NE1
DCMI_D
5
EVEN
TOUT
USART1
_RX
FMC_NL
DCMI_V
SYNC
EVEN
TOUT
CAN1_R
X
ETH_MII_
TXD3
SDMMC
1_D4
DCMI_D
6
LCD_B6
EVEN
TOUT
SPI3_MI
SO
SPI1_M SPI3_M
OSI/I2S1 OSI/I2S3
_SD
_SD
STM32F756xx
SYS
Port A
Port B
AF2
78/228
Table 12. STM32F756xx alternate function mapping (continued)
AF0
AF1
Port
DocID027589 Rev 4
Port B
AF2
AF3
AF4
AF5
AF6
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
AF13
AF14
AF15
DCMI
LCD
SYS
SDMMC
1_D5
DCMI_D
7
LCD_B7
EVEN
TOUT
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
TIM1/2
PB9
TIM4_C
H4
TIM11_CH
1
I2C1_SD
A
SPI2_NS
S/I2S2_
WS
CAN1_T
X
PB10
TIM2_C
H3
I2C2_SC
L
SPI2_SC
K/I2S2_
CK
USART3
_TX
OTG_HS_ ETH_MII_
ULPI_D3
RX_ER
LCD_G4
EVEN
TOUT
PB11
TIM2_C
H4
I2C2_SD
A
USART3
_RX
ETH_MII_
OTG_HS_ TX_EN/E
ULPI_D4 TH_RMII_
TX_EN
LCD_G5
EVEN
TOUT
PB12
TIM1_B
KIN
I2C2_SM
BA
SPI2_NS
S/I2S2_
WS
USART3
_CK
CAN2_R
X
ETH_MII_
OTG_HS_ TXD0/ET OTG_HS
ULPI_D5 H_RMII_T
_ID
XD0
EVEN
TOUT
PB13
TIM1_C
H1N
SPI2_SC
K/I2S2_
CK
USART3
_CTS
CAN2_T
X
ETH_MII_
OTG_HS_ TXD1/ET
ULPI_D6 H_RMII_T
XD1
EVEN
TOUT
PB14
TIM1_C
H2N
TIM8_CH
2N
SPI2_MI
SO
USART3
_RTS
TIM12_C
H1
OTG_HS
_DM
EVEN
TOUT
PB15
RTC_R
EFIN
TIM1_C
H3N
TIM8_CH
3N
SPI2_M
OSI/I2S2
_SD
TIM12_C
H2
OTG_HS
_DP
EVEN
TOUT
PC0
SAI2_FS
_B
OTG_HS_
ULPI_ST
P
FMC_SD
NWE
LCD_R5
EVEN
TOUT
PC1
TRACE
D0
SPI2_M
SAI1_SD
OSI/I2S2
_A
_SD
ETH_MD
C
EVEN
TOUT
PC2
SPI2_MI
SO
OTG_HS_ ETH_MII_ FMC_SD

ULPI_DIR
TXD2
NE0
EVEN
TOUT
PC3
SPI2_M
OSI/I2S2
_SD
OTG_HS_
ETH_MII_ FMC_SD
ULPI_NX
TX_CLK
CKE0
T
EVEN
TOUT
Port C
79/228
SYS
STM32F756xx
AF0
AF1
Port
DocID027589 Rev 4
Port C
AF2
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
TIM1/2
PC4
I2S1_M
CK
SPDIFRX
_IN2
ETH_MII_
RXD0/ET FMC_SD
H_RMII_
NE0
RXD0
EVEN
TOUT
PC5
SPDIFRX
_IN3
ETH_MII_
RXD1/ET FMC_SD
H_RMII_
CKE0
RXD1
EVEN
TOUT
PC6
TIM3_C
H1
TIM8_CH
1
I2S2_M
CK
USART6
_TX
SDMMC
1_D6
DCMI_D
0
LCD_HS
YNC
EVEN
TOUT
PC7
TIM3_C
H2
TIM8_
CH2
I2S3_M
CK
USART6
_RX
SDMMC
1_D7
DCMI_D
1
LCD_G6
EVEN
TOUT
PC8
TRACE
D1
TIM3_C
H3
TIM8_
CH3
UART5_
RTS
USART6
_CK
SDMMC
1_D0
DCMI_D
2
EVEN
TOUT
PC9
MCO2
TIM3_C
H4
TIM8_
CH4
I2C3_SD
A
I2S_CKI
N
UART5_
CTS
QUADSP
I_BK1_IO
0
SDMMC
1_D1
DCMI_D
3
EVEN
TOUT
PC10
SPI3_SC
K/I2S3_
CK
USART3
_TX
QUADSP
UART4_T
I_BK1_IO
X
1
SDMMC
1_D2
DCMI_D
8
LCD_R2
EVEN
TOUT
PC11
SPI3_MI
SO
USART3
_RX
UART4_
RX
QUADSP
I_BK2_N
CS
SDMMC
1_D3
DCMI_D
4
EVEN
TOUT
PC12
TRACE
D3
SPI3_M
OSI/I2S3
_SD
USART3
_CK
UART5_T
X
SDMMC
1_CK
DCMI_D
9
EVEN
TOUT
PC13
EVEN
TOUT
PC14
EVEN
TOUT
PC15
EVEN
TOUT
STM32F756xx
SYS
80/228
AF0
AF1
Port
DocID027589 Rev 4
Port D
AF2
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
TIM1/2
PD0
CAN1_R
X
FMC_D2
EVEN
TOUT
PD1
CAN1_T
X
FMC_D3
EVEN
TOUT
PD2
TRACE
D2
TIM3_ET
R
UART5_
RX
SDMMC
1_CMD
DCMI_D
11
EVEN
TOUT
PD3
SPI2_SC
K/I2S2_
CK
USART2
_CTS
FMC_CL
K
DCMI_D
5
LCD_G7
EVEN
TOUT
PD4
USART2
_RTS
FMC_N
OE
EVEN
TOUT
PD5
USART2
_TX
FMC_N
WE
EVEN
TOUT
PD6
USART2
_RX
FMC_N
WAIT
DCMI_D
10
LCD_B2
EVEN
TOUT
PD7
USART2
_CK
SPDIFRX
_IN0
FMC_NE
1
EVEN
TOUT
PD8
USART3
_TX
SPDIFRX
_IN1
FMC_D1
3
EVEN
TOUT
PD9
USART3
_RX
FMC_D1
4
EVEN
TOUT
PD10
USART3
_CK
FMC_D1
5
LCD_B3
EVEN
TOUT
PD11
I2C4_SM
BA
USART3
_CTS
QUADSP
SAI2_SD_
I_BK1_IO
A
0
FMC_A1
6/FMC_
CLE
EVEN
TOUT
PD12
TIM4_C
H1
LPTIM1_I
N1
I2C4_SC
L
USART3
_RTS
QUADSP
SAI2_FS_
I_BK1_IO
A
1
FMC_A1
7/FMC_
ALE
EVEN
TOUT
PD13
TIM4_C
H2
LPTIM1_
OUT
I2C4_SD
A
QUADSP
I_BK1_IO
3
FMC_A1
8
EVEN
TOUT
SPI3_M
SAI1_SD
OSI/I2S3
_A
_SD
SAI2_SC
K_A
81/228
SYS
STM32F756xx
AF0
AF1
Port
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
TIM1/2
PD14
TIM4_C
H3
UART8_
CTS
FMC_D0
EVEN
TOUT
PD15
TIM4_C
H4
UART8_
RTS
FMC_D1
EVEN
TOUT
PE0
TIM4_ET LPTIM1_E
R
TR
UART8_
Rx
SAI2_MC
K_A
FMC_NB
L0
DCMI_D
2
EVEN
TOUT
PE1
LPTIM1_I
N2
UART8_T
x
FMC_NB
L1
DCMI_D
3
EVEN
TOUT
PE2
TRACE
CLK
SPI4_SC
K
SAI1_M
CLK_A
QUADSP
I_BK1_IO
2
ETH_MII_
TXD3
FMC_A2
3
EVEN
TOUT
PE3
TRACE
D0
SAI1_SD
_B
FMC_A1
9
EVEN
TOUT
PE4
TRACE
D1
SPI4_NS SAI1_FS
S
_A
FMC_A2
0
DCMI_D
4
LCD_B0
EVEN
TOUT
PE5
TRACE
D2
TIM9_CH
1
SPI4_MI
SO
SAI1_SC
K_A
FMC_A2
1
DCMI_D
6
LCD_G0
EVEN
TOUT
PE6
TRACE
D3
TIM1_B
KIN2
TIM9_CH
2
SPI4_M
OSI
SAI1_SD
_A
SAI2_MC
K_B
FMC_A2
2
DCMI_D
7
LCD_G1
EVEN
TOUT
PE7
TIM1_ET
R
UART7_
Rx
QUADSPI
_BK2_IO0
FMC_D4
EVEN
TOUT
PE8
TIM1_C
H1N
UART7_T
x
QUADSPI
_BK2_IO1
FMC_D5
EVEN
TOUT
PE9
TIM1_C
H1
UART7_
RTS
QUADSPI
_BK2_IO2
FMC_D6
EVEN
TOUT
PE10
TIM1_C
H2N
UART7_
CTS
QUADSPI
_BK2_IO3
FMC_D7
EVEN
TOUT
PE11
TIM1_C
H2
SPI4_NS
S
SAI2_SD_
B
FMC_D8
LCD_G3
EVEN
TOUT
PE12
TIM1_C
H3N
SPI4_SC
K
SAI2_SC
K_B
FMC_D9
LCD_B4
EVEN
TOUT
PE13
TIM1_C
H3
SPI4_MI
SO
SAI2_FS_
B
FMC_D1
0
LCD_DE
EVEN
TOUT
DocID027589 Rev 4
STM32F756xx
SYS
Port D
Port E
AF2
82/228
AF0
AF1
Port
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
TIM1/2
PE14
TIM1_C
H4
SPI4_M
OSI
SAI2_MC
K_B
FMC_D1
1
LCD_CL
K
EVEN
TOUT
PE15
TIM1_B
KIN
FMC_D1
2
LCD_R7
EVEN
TOUT
PF0
I2C2_SD
A
FMC_A0
EVEN
TOUT
PF1
I2C2_SC
L
FMC_A1
EVEN
TOUT
PF2
I2C2_SM
BA
FMC_A2
EVEN
TOUT
PF3
FMC_A3
EVEN
TOUT
PF4
FMC_A4
EVEN
TOUT
PF5
FMC_A5
EVEN
TOUT
PF6
TIM10_C
H1
SPI5_NS SAI1_SD
S
_B
UART7_
Rx
QUADSP
I_BK1_IO
3
EVEN
TOUT
PF7
TIM11_CH
1
SPI5_SC
K
SAI1_M
CLK_B
QUADSP
UART7_T
I_BK1_IO
x
2
EVEN
TOUT
PF8
SPI5_MI
SO
SAI1_SC
K_B
UART7_
RTS
TIM13_C
H1
QUADSPI
_BK1_IO0
EVEN
TOUT
PF9
SPI5_M
OSI
SAI1_FS
_B
UART7_
CTS
TIM14_C
H1
QUADSPI
_BK1_IO1
EVEN
TOUT
PF10
DCMI_D
11
LCD_DE
EVEN
TOUT
PF11
SPI5_M
OSI
SAI2_SD_
B
FMC_SD
NRAS
DCMI_D
12
EVEN
TOUT
PF12
FMC_A6
EVEN
TOUT
DocID027589 Rev 4
83/228
SYS
Port E
Port F
AF2
STM32F756xx
AF0
AF1
Port
Port F
DocID027589 Rev 4
Port G
AF2
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
TIM1/2
PF13
I2C4_SM
BA
FMC_A7
EVEN
TOUT
PF14
I2C4_SC
L
FMC_A8
EVEN
TOUT
PF15
I2C4_SD
A
FMC_A9
EVEN
TOUT
PG0
FMC_A1
0
EVEN
TOUT
PG1
FMC_A1
1
EVEN
TOUT
PG2
FMC_A1
2
EVEN
TOUT
PG3
FMC_A1
3
EVEN
TOUT
PG4
FMC_A1
4/FMC_
BA0
EVEN
TOUT
PG5
FMC_A1
5/FMC_
BA1
EVEN
TOUT
PG6
DCMI_D
12
LCD_R7
EVEN
TOUT
PG7
USART6
_CK
FMC_IN
T
DCMI_D
13
LCD_CL
K
EVEN
TOUT
PG8
SPI6_NS
S
SPDIFRX
_IN2
USART6
_RTS
EVEN
TOUT
PG9
SPDIFRX
_IN3
USART6
_RX
PG10
ETH_PPS FMC_SD
_OUT
CLK
QUADSP
SAI2_FS_
I_BK2_IO
B
2
FMC_NE
2/FMC_
NCE
DCMI_V
SYNC
EVEN
TOUT
SAI2_SD_
B
FMC_NE
3
DCMI_D
2
LCD_B2
EVEN
TOUT
LCD_G3
STM32F756xx
SYS
84/228
AF0
AF1
Port
Port G
AF2
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
DocID027589 Rev 4
TIM1/2
PG11
SPDIFRX
_IN0
ETH_MII_
TX_EN/E
TH_RMII_
TX_EN
DCMI_D
3
LCD_B3
EVEN
TOUT
PG12
LPTIM1_I
N1
SPI6_MI
SO
SPDIFRX
_IN1
USART6
_RTS
LCD_B4
FMC_NE
4
LCD_B1
EVEN
TOUT
PG13
TRACE
D0
LPTIM1_
OUT
SPI6_SC
K
USART6
_CTS
ETH_MII_
TXD0/ET FMC_A2
H_RMII_T
4
XD0
LCD_R0
EVEN
TOUT
PG14
TRACE
D1
LPTIM1_E
TR
SPI6_M
OSI
USART6
_TX
QUADSP
I_BK2_IO
3
ETH_MII_
TXD1/ET FMC_A2
H_RMII_T
5
XD1
LCD_B0
EVEN
TOUT
PG15
USART6
_CTS
FMC_SD
NCAS
DCMI_D
13
EVEN
TOUT
PH0
EVEN
TOUT
PH1
EVEN
TOUT
PH2
LPTIM1_I
N2
QUADSP
I_BK2_IO
0
SAI2_SC
K_B
ETH_MII_ FMC_SD
CRS
CKE0
LCD_R0
EVEN
TOUT
PH3
QUADSP
I_BK2_IO
1
SAI2_MC
K_B
ETH_MII_ FMC_SD
COL
NE0
LCD_R1
EVEN
TOUT
PH4
I2C2_SC
L
OTG_HS_
ULPI_NX
T
EVEN
TOUT
PH5
I2C2_SD
A
SPI5_NS
S
FMC_SD
NWE
EVEN
TOUT
PH6
I2C2_SM
BA
SPI5_SC
K
TIM12_C
H1
ETH_MII_ FMC_SD
RXD2
NE1
DCMI_D
8
EVEN
TOUT
PH7
I2C3_SC
L
SPI5_MI
SO
ETH_MII_ FMC_SD
RXD3
CKE1
DCMI_D
9
EVEN
TOUT
Port H
85/228
SYS
STM32F756xx
AF0
AF1
Port
AF2
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
TIM1/2
PH8
I2C3_SD
A
FMC_D1
6
DCMI_H
SYNC
LCD_R2
EVEN
TOUT
PH9
I2C3_SM
BA
TIM12_C
H2
FMC_D1
7
DCMI_D
0
LCD_R3
EVEN
TOUT
PH10
TIM5_C
H1
I2C4_SM
BA
FMC_D1
8
DCMI_D
1
LCD_R4
EVEN
TOUT
PH11
TIM5_C
H2
I2C4_SC
L
FMC_D1
9
DCMI_D
2
LCD_R5
EVEN
TOUT
PH12
TIM5_C
H3
I2C4_SD
A
FMC_D2
0
DCMI_D
3
LCD_R6
EVEN
TOUT
PH13
TIM8_CH
1N
CAN1_T
X
FMC_D2
1
LCD_G2
EVEN
TOUT
PH14
TIM8_CH
2N
FMC_D2
2
DCMI_D
4
LCD_G3
EVEN
TOUT
PH15
TIM8_CH
3N
FMC_D2
3
DCMI_D
11
LCD_G4
EVEN
TOUT
PI0
TIM5_C
H4
SPI2_NS
S/I2S2_
WS
FMC_D2
4
DCMI_D
13
LCD_G5
EVEN
TOUT
PI1
TIM8_BKI
N2
SPI2_SC
K/I2S2_
CK
FMC_D2
5
DCMI_D
8
LCD_G6
EVEN
TOUT
PI2
TIM8_CH
4
SPI2_MI
SO
FMC_D2
6
DCMI_D
9
LCD_G7
EVEN
TOUT
PI3
TIM8_ET
R
SPI2_M
OSI/I2S2
_SD
FMC_D2
7
DCMI_D
10
EVEN
TOUT
PI4
TIM8_BKI
N
SAI2_MC
K_A
FMC_NB
L2
DCMI_D
5
LCD_B4
EVEN
TOUT
PI5
TIM8_CH
1
SAI2_SC
K_A
FMC_NB
L3
DCMI_V
SYNC
LCD_B5
EVEN
TOUT
PI6
TIM8_CH
2
SAI2_SD_
A
FMC_D2
8
DCMI_D
6
LCD_B6
EVEN
TOUT
Port H
DocID027589 Rev 4
Port I
STM32F756xx
SYS
86/228
AF0
AF1
Port
Port I
DocID027589 Rev 4
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
87/228
SYS
TIM1/2
PI7
TIM8_CH
3
SAI2_FS_
A
FMC_D2
9
DCMI_D
7
LCD_B7
EVEN
TOUT
PI8
EVEN
TOUT
PI9
CAN1_R
X
FMC_D3
0
LCD_VS
YNC
EVEN
TOUT
PI10
ETH_MII_ FMC_D3
RX_ER
1
LCD_HS
YNC
EVEN
TOUT
PI11
OTG_HS_
ULPI_DIR
EVEN
TOUT
PI12
LCD_HS
YNC
EVEN
TOUT
PI13
LCD_VS
YNC
EVEN
TOUT
PI14
LCD_CL
K
EVEN
TOUT
PI15
LCD_R0
EVEN
TOUT
PJ0
LCD_R1
EVEN
TOUT
PJ1
LCD_R2
EVEN
TOUT
PJ2
LCD_R3
EVEN
TOUT
PJ3
LCD_R4
EVEN
TOUT
PJ4
LCD_R5
EVEN
TOUT
PJ5
LCD_R6
EVEN
TOUT
PJ6
LCD_R7
EVEN
TOUT
Port J
AF2
STM32F756xx
AF0
AF1
Port
Port J
AF2
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
DocID027589 Rev 4
SYS
TIM1/2
PJ7
LCD_G0
EVEN
TOUT
PJ8
LCD_G1
EVEN
TOUT
PJ9
LCD_G2
EVEN
TOUT
PJ10
LCD_G3
EVEN
TOUT
PJ11
LCD_G4
EVEN
TOUT
PJ12
LCD_B0
EVEN
TOUT
PJ13
LCD_B1
EVEN
TOUT
PJ14
LCD_B2
EVEN
TOUT
PJ15
LCD_B3
EVEN
TOUT
88/228
STM32F756xx
AF0
AF1
Port
AF2
AF3
TIM8/9/10/
TIM3/4/5 11/LPTIM
1/CEC
AF4
AF5
AF6
I2C1/2/3/
4/CEC
SPI1/2/3/
4/5/6
SPI3/
SAI1
AF7
AF8
AF9
AF10
AF11
AF12
SAI2/US
SPI2/3/U
CAN1/2/T SAI2/QU
ART6/UA
FMC/SD
SART1/2/
IM12/13/ ADSPI/O
ETH/
RT4/5/7/8
MMC1/O
3/UART5/
/SPDIFR
TG2_FS
SPDIFRX
SPI/LCD OTG1_FS
X
AF13
AF14
AF15
DCMI
LCD
SYS
SYS
TIM1/2
PK0
LCD_G5
EVEN
TOUT
PK1
LCD_G6
EVEN
TOUT
PK2
LCD_G7
EVEN
TOUT
PK3
LCD_B4
EVEN
TOUT
PK4
LCD_B5
EVEN
TOUT
PK5
LCD_B6
EVEN
TOUT
PK6
LCD_B7
EVEN
TOUT
PK7
LCD_DE
EVEN
TOUT
Port K
STM32F756xx
DocID027589 Rev 4
89/228
Memory mapping
STM32F756xx
Memory mapping
The memory map is shown in Figure 19.
Figure 19. Memory map
[))))))))
5HVHUYHG
[([))))))))
&RUWH[0LQWHUQDO
SHULSKHUDOV
[([()))))
$+%
[[')))))))
5HVHUYHG
[&[)))))))
[%))
$+%
0E\WH
%ORFN
&RUWH[0
,QWHUQDO
SHULSKHUDOV
5HVHUYHG
[
[[)))))))
[))))
[(
[')))))))
0E\WH
%ORFN
)0&
['
[&)))))))
$+%
0E\WH
%ORFN
)0&
[&
[)))))))
[
[)))))))
0E\WH
%ORFN
4XDG63,DQG
)0&EDQN
[
5HVHUYHG
[&[))))
[%))
0E\WH
%ORFN
)0&EDQNWR
EDQN
[
[)))))))
$3%
0E\WH
%ORFN
3HULSKHUDOV
[
[)))))))
0E\WH
%ORFN
65$0
[
[)))))))
0E\WH
%ORFN
[
5HVHUYHG
[[)))))))
65$0.%
[&[))))
65$0.%
[[%)))
'7&0.%
[[))))
5HVHUYHG
[)))[)))))))
2SWLRQ%\WHV
[)))[))))
5HVHUYHG
[[))())))
5HVHUYHG
[
[[))))
[)))
$3%
)ODVKPHPRU\RQ$;,0LQWHUIDFH [[)))))
5HVHUYHG
[[))))))
)ODVKPHPRU\RQ,7&0LQWHUIDFH [[)))))
5HVHUYHG
90/228
[[)))))
6\VWHPPHPRU\
[[('%)
5HVHUYHG
[[)))))
,7&05$0
[[)))
DocID027589 Rev 4
[
069
STM32F756xx
Memory mapping
Table 13. STM32F756xx register boundary addresses

Bus
Cortex-M7
AHB3
AHB2
Boundary address
Peripheral
0xE00F FFFF - 0xFFFF FFFF
Reserved
0xE000 0000 - 0xE00F FFFF
Cortex-M7 internal peripherals
0xD000 0000 - 0xDFFF FFFF
FMC bank 6
0xC000 0000 - 0xCFFF FFFF
FMC bank 5
0xA000 2000 - 0xBFFF FFFF
Reserved
0xA000 1000 - 0xA000 1FFF
Quad-SPI control register
0xA000 0000- 0xA000 0FFF
FMC control register
0x9000 0000 - 0x9FFF FFFF
Quad-SPI
0x8000 0000 - 0x8FFF FFFF
FMC bank 3
0x7000 0000 - 0x7FFF FFFF
FMC bank 2
0x6000 0000 - 0x6FFF FFFF
FMC bank 1
0x5006 0C00- 0x5FFF FFFF
Reserved
0x5006 0800 - 0x5006 0BFF
RNG
0x5006 0400 - 0x5006 07FF
HASH
0x5006 0000 - 0x5006 03FF
CRYP
0x5005 0400 - 0x5005 FFFF
Reserved
0x5005 0000 - 0x5005 03FF
DCMI
0x5004 0000- 0x5004 FFFF
Reserved
0x5000 0000 - 0x5003 FFFF
USB OTG FS
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94
Memory mapping
STM32F756xx
Table 13. STM32F756xx register boundary addresses (continued)
Bus
Boundary address
Peripheral
0x4008 0000- 0x4FFF FFFF
Reserved
0x4004 0000 - 0x4007 FFFF
USB OTG HS
0x4002 BC00- 0x4003 FFFF
Reserved
0x4002 B000 - 0x4002 BBFF
Chrom-ART (DMA2D)
0x4002 9400 - 0x4002 AFFF
Reserved
0x4002 9000 - 0x4002 93FF

0x4002 8C00 - 0x4002 8FFF
0x4002 8800 - 0x4002 8BFF
ETHERNET MAC
0x4002 8400 - 0x4002 87FF

0x4002 8000 - 0x4002 83FF
AHB1
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0x4002 6800 - 0x4002 7FFF
Reserved
0x4002 6400 - 0x4002 67FF
DMA2
0x4002 6000 - 0x4002 63FF
DMA1
0x4002 5000 - 0X4002 5FFF
Reserved
0x4002 4000 - 0x4002 4FFF
BKPSRAM
0x4002 3C00 - 0x4002 3FFF
Flash interface register
0x4002 3800 - 0x4002 3BFF
RCC
0X4002 3400 - 0X4002 37FF
Reserved
0x4002 3000 - 0x4002 33FF
CRC
0x4002 2C00 - 0x4002 2FFF
Reserved
0x4002 2800 - 0x4002 2BFF
GPIOK
0x4002 2400 - 0x4002 27FF
GPIOJ
0x4002 2000 - 0x4002 23FF
GPIOI
0x4002 1C00 - 0x4002 1FFF
GPIOH
0x4002 1800 - 0x4002 1BFF
GPIOG
0x4002 1400 - 0x4002 17FF
GPIOF
0x4002 1000 - 0x4002 13FF
GPIOE
0X4002 0C00 - 0x4002 0FFF
GPIOD
0x4002 0800 - 0x4002 0BFF
GPIOC
0x4002 0400 - 0x4002 07FF
GPIOB
0x4002 0000 - 0x4002 03FF
GPIOA
DocID027589 Rev 4
STM32F756xx
Memory mapping
Bus
APB2
Boundary address
Peripheral
0x4001 6C00- 0x4001 FFFF
Reserved
0x4001 6800 - 0x4001 6BFF
LCD-TFT
0x4001 6000 - 0x4001 67FF
Reserved
0x4001 5C00 - 0x4001 5FFF
SAI2
0x4001 5800 - 0x4001 5BFF
SAI1
0x4001 5400 - 0x4001 57FF
SPI6
0x4001 5000 - 0x4001 53FF
SPI5
0x4001 4C00 - 0x4001 4FFF
Reserved
0x4001 4800 - 0x4001 4BFF
TIM11
0x4001 4400 - 0x4001 47FF
TIM10
0x4001 4000 - 0x4001 43FF
TIM9
0x4001 3C00 - 0x4001 3FFF
EXTI
0x4001 3800 - 0x4001 3BFF
SYSCFG
0x4001 3400 - 0x4001 37FF
SPI4
0x4001 3000 - 0x4001 33FF
SPI1/I2S1
0x4001 2C00 - 0x4001 2FFF
SDMMC
0x4001 2400 - 0x4001 2BFF
Reserved
0x4001 2000 - 0x4001 23FF
ADC1 - ADC2 - ADC3
0x4001 1800 - 0x4001 1FFF
Reserved
0x4001 1400 - 0x4001 17FF
USART6
0x4001 1000 - 0x4001 13FF
USART1
0x4001 0800 - 0x4001 0FFF
Reserved
0x4001 0400 - 0x4001 07FF
TIM8
0x4001 0000 - 0x4001 03FF
TIM1
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Memory mapping
STM32F756xx
Bus
APB1
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Boundary address
Peripheral
0x4000 8000- 0x4000 FFFF
Reserved
0x4000 7C00 - 0x4000 7FFF
UART8
0x4000 7800 - 0x4000 7BFF
UART7
0x4000 7400 - 0x4000 77FF
DAC
0x4000 7000 - 0x4000 73FF
PWR
0x4000 6C00 - 0x4000 6FFF
HDMI-CEC
0x4000 6800 - 0x4000 6BFF
CAN2
0x4000 6400 - 0x4000 67FF
CAN1
0x4000 6000 - 0x4000 63FF
I2C4
0x4000 5C00 - 0x4000 5FFF
I2C3
0x4000 5800 - 0x4000 5BFF
I2C2
0x4000 5400 - 0x4000 57FF
I2C1
0x4000 5000 - 0x4000 53FF
UART5
0x4000 4C00 - 0x4000 4FFF
UART4
0x4000 4800 - 0x4000 4BFF
USART3
0x4000 4400 - 0x4000 47FF
USART2
0x4000 4000 - 0x4000 43FF
SPDIFRX
0x4000 3C00 - 0x4000 3FFF
SPI3 / I2S3
0x4000 3800 - 0x4000 3BFF
SPI2 / I2S2
0x4000 3400 - 0x4000 37FF
Reserved
0x4000 3000 - 0x4000 33FF
IWDG
0x4000 2C00 - 0x4000 2FFF
WWDG
0x4000 2800 - 0x4000 2BFF
RTC & BKP Registers
0x4000 2400 - 0x4000 27FF
LPTIM1
0x4000 2000 - 0x4000 23FF
TIM14
0x4000 1C00 - 0x4000 1FFF
TIM13
0x4000 1800 - 0x4000 1BFF
TIM12
0x4000 1400 - 0x4000 17FF
TIM7
0x4000 1000 - 0x4000 13FF
TIM6
0x4000 0C00 - 0x4000 0FFF
TIM5
0x4000 0800 - 0x4000 0BFF
TIM4
0x4000 0400 - 0x4000 07FF
TIM3
0x4000 0000 - 0x4000 03FF
TIM2
DocID027589 Rev 4
STM32F756xx
5
5.1
Electrical characteristics
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
5.1.1
Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean3).
5.1.2
Typical values
Unless otherwise specified, typical data are based on TA = 25 C, VDD = 3.3 V (for the
1.7 V VDD 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean2).
5.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 20.
5.1.5
Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 21.
Figure 20. Pin loading conditions
Figure 21. Pin input voltage
-#5PIN
-#5PIN
#P&
6).
-36
DocID027589 Rev 4
-36
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196
5.1.6
STM32F756xx
Power supply scheme

Figure 22. Power supply scheme
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s h^
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&
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06Y9
1. To connect BYPASS_REG and PDR_ON pins, refer to Section 2.17: Power supply supervisor and Section 2.18: Voltage
regulator
2. The two 2.2 F ceramic capacitors should be replaced by two 100 nF decoupling capacitors when the voltage regulator is
OFF.
3. The 4.7 F ceramic capacitor must be connected to one of the VDD pin.
4. VDDA=VDD and VSSA=VSS.
Caution:
96/228
Each power supply pair (VDD/VSS, VDDA/VSSA ...) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure good operation of the
device. It is not recommended to remove filtering capacitors to reduce PCB size or cost.
This might cause incorrect operation of the device.
DocID027589 Rev 4
STM32F756xx
5.1.7
Current consumption measurement

Figure 23. Current consumption measurement scheme
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5.2
Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 14: Voltage characteristics,
Table 15: Current characteristics, and Table 16: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Table 14. Voltage characteristics
Symbol
VDDVSS
VIN
Ratings
Min
Max
0.3
4.0
Input voltage on FT pins(2)
VSS 0.3
VDD+4.0
Input voltage on TTa pins
VSS 0.3
4.0
Input voltage on any other pin
VSS 0.3
4.0
VSS
9.0
50
50
External main supply voltage (including VDDA, VDD,

VBAT and VDDUSB) (1)
Input voltage on BOOT pin

|VDDx|
|VSSX VSS|
VESD(HBM)
Variations between different VDD power pins

Variations between all the different ground
pins(3)
Electrostatic discharge voltage (human body model)
Unit
mV
see Section 5.3.15:

Absolute maximum
ratings (electrical
sensitivity)
1. All main power (VDD, VDDA, VDDUSB) and ground (VSS, VSSA) pins must always be connected to the
external power supply, in the permitted range.
2. VIN maximum value must always be respected. Refer to Table 15 for the values of the maximum allowed
injected current.
3. Include VREF- pin.
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Table 15. Current characteristics
Symbol
Ratings
Max.
IVDD
Total current into sum of all VDD_x power lines (source)(1)
IVSS
(1)
IVDDUSB
Total current out of sum of all VSS_x ground lines (sink)
IVSS
(1)
100
Output current sunk by any I/O and control pin
25
25
Output current sourced by any I/Os and control pin

(2)
Injected current on FT, FTf, RST and B pins
mA
120
Total output current sunk by sum of all USB I/Os

Total output current sourced by sum of all I/Os and control
IINJ(PIN)(4)
100
Maximum current out of each VSS_x ground line (sink)
Total output current sunk by sum of all I/O and control pins
IINJ(PIN)
320
25
Maximum current into each VDD_x power line (source)(1)
IIO
320
Total current into VDDUSB power line (source)
IVDD
IIO
Unit
25
pins(2)
120
(3)
5/+0
Injected current on TTa pins(4)
Total injected current (sum of all I/O and control pins)(5)
25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer to Table 14: Voltage characteristics for the values of the maximum allowed input voltage.
5. When several inputs are submitted to a current injection, the maximum IINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).
Table 16. Thermal characteristics

Symbol
TSTG
TJ
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Ratings
Storage temperature range
Maximum junction temperature
DocID027589 Rev 4
Value
65 to +150
125
Unit
C
STM32F756xx
5.3
Operating conditions
5.3.1
General operating conditions

Table 17. General operating conditions
Symbol
Conditions(1)
Parameter
Power Scale 3 (VOS[1:0] bits in

PWR_CR register = 0x01), Regulator
ON, over-drive OFF
fHCLK
Internal AHB clock frequency
fPCLK1
Internal APB1 clock frequency
fPCLK2
Internal APB2 clock frequency
VDD
(4)
VDDA
(5)
Analog operating voltage

(ADC limited to 1.2 M samples)
Analog operating voltage
(ADC limited to 2.4 M samples)
Backup operating voltage
Typ
Max
144
168
180
180
216(2)
Over-drive OFF
45
Over-drive ON
54
Over-drive OFF
90
Over-drive ON
108
1.7(3)
3.6
1.7(3)
2.4
2.4
3.6
USB not used
1.7
3.3
3.6
USB used
3.0
3.6
1.65
3.6
Must be the same potential as
DocID027589 Rev 4
Unit
Overdrive
Power Scale 1 (VOS[1:0] bits in OFF
PWR_CR register= 0x11),
OverRegulator ON
drive
ON
Standard operating voltage
USB supply voltage (supply

VDDUSB voltage for PA11,PA12, PB14
and PB15 pins)
VBAT
Overdrive
Power Scale 2 (VOS[1:0] bits in OFF
PWR_CR register = 0x10),
OverRegulator ON
drive
ON
Min
MHz
VDD(6)
V
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STM32F756xx
Table 17. General operating conditions (continued)

Symbol
Min
Typ
Max
Power Scale 3 ((VOS[1:0] bits in

PWR_CR register = 0x01), 144 MHz
HCLK max frequency
1.08
1.14
1.20

HCLK max frequency with over-drive
OFF or 180 MHz with over-drive ON
1.20
1.26
1.32

HCLK max frequency with over-drive
OFF or 216 MHz with over-drive ON
1.26
1.32
1.40
Regulator OFF: 1.2 V external

voltage must be supplied from
external regulator on
VCAP_1/VCAP_2 pins(7)
Max frequency 144 MHz
1.10
1.14
1.20
Max frequency 168MHz
1.20
1.26
1.32
Max frequency 180 MHz
1.26
1.32
1.38
Input voltage on RST and FT

pins(8)
2 V VDD 3.6 V
0.3
5.5
VDD 2 V
0.3
5.2
Regulator ON: 1.2 V internal

voltage on VCAP_1/VCAP_2 pins
V12
VIN
PD
TA
TJ
Conditions(1)
Parameter
Input voltage on TTa pins
0.3
VDDA+
0.3
Input voltage on BOOT pin
LQFP100
465
TFBGA100
351
WLCSP143
641
LQFP144
500
LQFP176
526
UFBGA176
513
LQFP208
1053
TFBGA216
690
Ambient temperature for 6 suffix Maximum power dissipation

version
Low power dissipation(10)
40
85
40
105
Ambient temperature for 7 suffix Maximum power dissipation

version
Low power dissipation(10)
40
105
40
125
6 suffix version
40
105
7 suffix version
40
125
Power dissipation at TA = 85 C
for suffix 6 or TA = 105 C for
suffix 7(9)
Junction temperature range
Unit
mW
1. The over-drive mode is not supported at the voltage ranges from 1.7 to 2.1 V.
2. 216 MHz maximum frequency for 6 suffix version (200 MHz maximum frequency for 7 suffix version).
3. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.17.2:
Internal reset OFF).
4. When the ADC is used, refer to Table 62: ADC characteristics.
5. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
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6. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and
VDDA can be tolerated during power-up and power-down operation.
7. The over-drive mode is not supported when the internal regulator is OFF.
8. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled
9. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
10. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.
Table 18. Limitations depending on the operating power supply range

Maximum Flash
Maximum HCLK
memory access
frequency vs Flash
frequency with
memory wait states
no wait states
(1)(2)
(fFlashmax)
Possible Flash
memory
operations
Operating
power supply
range
ADC operation
VDD =1.7 to
2.1 V(3)
Conversion time
up to 1.2 Msps
20 MHz
180 MHz with 8 wait

No I/O
states and over-drive
compensation
OFF
8-bit erase and

program
operations only
VDD = 2.1 to
2.4 V
Conversion time
up to 1.2 Msps
22 MHz
216 MHz with 9 wait

No I/O
compensation
ON
16-bit erase and

program
operations
VDD = 2.4 to
2.7 V
Conversion time
up to 2.4 Msps
24 MHz
216 MHz with 8 wait

I/O compensation
works
ON
16-bit erase and

program
operations
VDD = 2.7 to
3.6 V(4)
Conversion time
up to 2.4 Msps
30 MHz
216 MHz with 7 wait

I/O compensation
works
ON
32-bit erase and

program
operations
I/O operation
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is
required.
2. Thanks to the ART accelerator on ITCM interface and L1-cache on AXI interface, the number of wait states given here
does not impact the execution speed from Flash memory since the ART accelerator or L1-cache allows to achieve a
performance equivalent to 0-wait state program execution.
3. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.17.2:
4. The voltage range for USB full speed PHYs can drop down to 2.7 V. However the electrical characteristics of D- and D+
pins will be degraded between 2.7 and 3 V.
5.3.2
VCAP1/VCAP2 external capacitor

Stabilization for the main regulator is achieved by connecting an external capacitor CEXT to
the VCAP1/VCAP2 pins. CEXT is specified in Table 19.
Figure 24. External capacitor CEXT
&
(65
5/HDN
069
1. Legend: ESR is the equivalent series resistance.
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STM32F756xx
Table 19. VCAP1/VCAP2 operating conditions(1)
Symbol
Parameter
Conditions
CEXT
Capacitance of external capacitor
2.2 F
ESR
ESR of external capacitor
<2
1. When bypassing the voltage regulator, the two 2.2 F VCAP capacitors are not required and should be
replaced by two 100 nF decoupling capacitors.
5.3.3
Operating conditions at power-up / power-down (regulator ON)

Subject to general operating conditions for TA.
Table 20. Operating conditions at power-up / power-down (regulator ON)
Symbol
tVDD
5.3.4
Parameter
Min
Max
VDD rise time rate
20
VDD fall time rate
20
Unit
s/V
Operating conditions at power-up / power-down (regulator OFF)

Subject to general operating conditions for TA.
Table 21. Operating conditions at power-up / power-down (regulator OFF)(1)
Symbol
tVDD
tVCAP
Parameter
Conditions
Min
Max
VDD rise time rate
Power-up
20
VDD fall time rate
Power-down
20
VCAP_1 and VCAP_2 rise time rate
Power-up
20
VCAP_1 and VCAP_2 fall time rate
Power-down
20
1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reach below
1.08 V.
5.3.5
Reset and power control block characteristics

The parameters given in Table 22 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 17.
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DocID027589 Rev 4
Unit
s/V
STM32F756xx
Table 22. reset and power control block characteristics
Symbol
VPVD
Parameter
Conditions
Programmable voltage
detector level selection
VPVDhyst(1)
PVD hysteresis
VPOR/PDR
Power-on/power-down
reset threshold
Min
Typ
Max
Unit
PLS[2:0]=000 (rising edge)
2.09
2.14
2.19
PLS[2:0]=000 (falling edge)
1.98
2.04
2.08
2.23
2.30
2.37
2.13
2.19
2.25
2.39
2.45
2.51
2.29
2.35
2.39
2.54
2.60
2.65
2.44
2.51
2.56
2.70
2.76
2.82
2.59
2.66
2.71
2.86
2.93
2.99
2.65
2.84
2.92
2.96
3.03
3.10
2.85
2.93
2.99
3.07
3.14
3.21
2.95
3.03
3.09
100
mV
Falling edge
1.60
1.68
1.76
Rising edge
1.64
1.72
1.80
40
mV
VPDRhyst(1) PDR hysteresis
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
Rising edge
2.23
2.29
2.33
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
Rising edge
2.53
2.59
2.63
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
Rising edge
2.85
2.92
2.97
VBORhyst(1)
BOR hysteresis
100
mV
TRSTTEMPO
(1)(2)
POR reset temporization
0.5
1.5
3.0
ms
IRUSH(1)
InRush current on
voltage regulator poweron (POR or wakeup
from Standby)
160
250
mA
ERUSH(1)
InRush energy on
voltage regulator power- VDD = 1.7 V, TA = 105 C,
on (POR or wakeup
IRUSH = 171 mA for 31 s
from Standby)
5.4
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STM32F756xx
1. Guaranteed by design.
2. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant
when first instruction is read by the user application code.
5.3.6
Over-drive switching characteristics

When the over-drive mode switches from enabled to disabled or disabled to enabled, the
system clock is stalled during the internal voltage set-up.
The over-drive switching characteristics are given in Table 23. They are sbject to general
operating conditions for TA.
Table 23. Over-drive switching characteristics(1)
Symbol
Tod_swen
Parameter
Conditions
Min
Typ
Max
HSI
45
45
100
40
20
20
80
15
HSE max for 4 MHz

Over_drive switch
and min for 26 MHz
enable time
External HSE
50 MHz
HSI
Tod_swdis
HSE max for 4 MHz

Over_drive switch
and min for 26 MHz.
disable time
External HSE
50 MHz
Unit
5.3.7
Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 23: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.
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STM32F756xx
Typical and maximum current consumption

The MCU is placed under the following conditions:
All I/O pins are in input mode with a static value at VDD or VSS (no load).
All peripherals are disabled except if it is explicitly mentioned.
The Flash memory access time is adjusted both to fHCLK frequency and VDD range
(see Table 18: Limitations depending on the operating power supply range).
When the regulator is ON, the voltage scaling and over-drive mode are adjusted to
fHCLK frequency as follows:
Scale 3 for fHCLK 144 MHz
Scale 2 for 144 MHz < fHCLK 168 MHz
Scale 1 for 168 MHz < fHCLK 216 MHz. The over-drive is only ON at 216 MHz.
When the regulator is OFF, the V12 is provided externally as described in Table 17:
General operating conditions:
The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.
External clock frequency is 25 MHz and PLL is ON when fHCLK is higher than 25 MHz.
The typical current consumption values are obtained for 1.7 V VDD 3.6 V voltage
range and for TA= 25 C unless otherwise specified.
The maximum values are obtained for 1.7 V VDD 3.6 V voltage range and a
maximum ambient temperature (TA) unless otherwise specified.
For the voltage range 1.7 V VDD 3.6 V, the maximum frequency is 180 MHz.
Table 24. Typical and maximum current consumption in Run mode, code with data processing
running from ITCM RAM, regulator ON
Max(1)
Symbol
Parameter
Conditions
All peripherals
enabled(2)(3)
IDD
Supply
current in
RUN mode
All peripherals
disabled(3)
fHCLK (MHz)
Typ
Unit
216
178
208(4)
230(4)
200
165
193
212
230
185(4)
198(4)
TA = 25 C TA = 85 C TA = 105 C
(4)
180
147
171
168
130
152
164
177
144
100
116
127
137
60
44
52
63
73
25
21
25
36
46
216
102
120(4)
141(4)
200
95
111
131
149
180
84
98(4)
112(4)
125(4)
168
75
87
100
112
144
58
67
77
88
60
25
30
41
51
25
12
15
25
36
mA
1. Guaranteed by characterization results.
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2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption
should be considered.
3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.73 mA per ADC
for the analog part.
4. Guaranteed by test in production.
or SRAM on AXI (L1-cache ON), regulator ON
Max(1)
Symbol
Parameter
Conditions
All peripherals
enabled(2)(3)
IDD
Supply
current in
RUN mode
All peripherals
disabled(3)
fHCLK (MHz)
Typ
Unit
216
186
213
234
200
172
197
217
235
180
152
175
189
202
168
135
155
168
180
144
104
119
130
140
60
46
53
64
74
25
22
25
36
47
216
108
124
146
200
100
115
135
154
180
89
102
116
129
168
79
90
103
115
144
61
69
80
90
60
27
31
42
52
25
12
15
26
36
TA = 25 C TA = 85 C TA = 105 C
mA

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running from Flash memory or SRAM on AXI (L1-cache disabled), regulator ON
Max(1)
Symbol
Parameter
Conditions
All peripherals
enabled(2)(3)
IDD
Supply
current in
RUN mode
All peripherals
disabled(3)
fHCLK (MHz)
Typ
Unit
216
181
210
233
200
168
194
216
234
180
153
176
192
206
168
136
157
172
184
144
109
125
137
148
60
53
61
73
84
25
26
30
41
52
216
105
121
145
200
98
112
134
153
180
90
103
119
132
168
81
93
107
120
144
67
76
88
89
60
34
40
51
62
25
17
20
31
42
TA= 25 C TA=85 C TA=105 C
mA

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STM32F756xx
running from Flash memory on ITCM interface (ART disabled), regulator ON
Max(1)
Symbol
Parameter
Conditions
All peripherals
enabled(2)(3)
IDD
Supply
current in
RUN mode
All peripherals
disabled(3)
fHCLK (MHz)
Typ
Unit
216
205
237
261
200
191
219
241
260
180
176
202
218
232
168
158
181
196
209
144
130
148
161
172
60
58
67
79
89
25
27
32
43
54
216
130
149
173
200
121
138
160
179
180
113
129
145
159
168
102
116
131
144
144
88
100
112
123
60
40
45
57
68
25
19
22
33
44
TA= 25 C TA=85 C TA=105 C
mA

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or SRAM on AXI (L1-cache ON), regulator OFF
Max(1)
Symbol Parameter
IDD12/
IDD
Supply
current in
RUN mode
from V12
and VDD
supply
Conditions
All
Peripherals
Enabled(2)(3)
All
Peripherals
Disabled(3)
Typ
fHCLK
(MHz)
TA= 25 C
TA= 85 C
Unit
TA= 105 C
IDD12
IDD
IDD12
IDD
IDD12
IDD
IDD12
IDD
180
151
174
190
204
168
135
156
170
182
144
108
124
136
146
60
52
60
71
82
25
25
29
40
50
180
89
102
117
130
168
80
91
105
118
144
66
75
86
97
60
33
38
49
60
25
16
18
29
40
mA

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Table 29. Typical and maximum current consumption in Sleep mode, regulator ON
Max(1)
Symbol
Parameter
Conditions
fHCLK (MHz)
Typ
216
116
137(3)
159(3)
200
108
127
147
166
180
95
112(3)
126(3)
140(3)
168
85
99
112
125
144
65
76
87
98
60
30
35
46
57
25
15
18
29
39
71(3)
All
peripherals
enabled(2)
Supply
current in
Sleep mode
IDD
All
peripherals
disabled
Unit
TA = 25 C TA = 85 C TA = 105 C
46
(3)
mA
216
35
200
32
43
66
86
180
28
38(3)
53(3)
70(3)
168
25
33
47
61
144
20
26
37
50
60
10
14
26
36
25
20
31

3. Guaranteed by test in production.
Table 30. Typical and maximum current consumption in Sleep mode, regulator OFF
Max(1)
Symbol
IDD12/
IDD
Parameter
Supply
current in
RUN mode
from V12
and VDD
supply
Conditions
All
Peripherals
Enabled(2)
All
Peripherals
Disabled
Typ
fHCLK
(MHz)
TA= 25 C
TA= 105 C
IDD12
IDD
IDD12
IDD
IDD12
IDD
IDD12
IDD
180
94
110
125
138
168
83
96
111
123
144
64
74
85
96
60
29
34
44
55
25
14
16
27
37
180
27
36
51
68
168
24
31
45
59
144
18
24
35
48
60
12
24
34
25
18
29
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TA= 85 C
DocID027589 Rev 4
Unit
mA
STM32F756xx
Table 31. Typical and maximum current consumptions in Stop mode

Max(1)
Typ
Symbol
IDD_STOP_NM
(normal mode)
Parameter
VDD = 3.6 V
Conditions
Flash memory in Stop mode,

Supply current in Stop all oscillators OFF, no IWDG
mode, main regulator in
Flash memory in Deep power
Run mode
down mode, all oscillators OFF
Flash memory in Stop mode, all
Supply current in Stop oscillators OFF, no IWDG
mode, main regulator in Flash memory in Deep power
Low-power mode
down mode, all oscillators OFF, no
IWDG
Regulator in Run mode, Flash

memory in Deep power down
Supply current in Stop mode, all oscillators OFF, no
IDD_STOP_UDM
mode, main regulator in IWDG
(under-drive Low voltage and underRegulator in Low-power mode,
mode)
drive modes
Flash memory in Deep power
down mode, all oscillators OFF, no
IWDG
Unit
TA =
25 C
TA =
25 C
TA =
TA =
85 C 105 C
0.45
2.00
14.00
22.00
0.40
2.00
14.00
22.00
0.32
1.50
10.00
18.00
0.27
1.50
10.00
18.00
0.15
0.80
4.00
7.00
0.10
0.70
4.00
7.00
mA
1. Data based on characterization, tested in production.
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Table 32. Typical and maximum current consumptions in Standby mode

Typ(1)
Symbol
Parameter
Max(2)
TA =
25 C
TA = 25 C
Conditions
VDD = VDD= VDD =

1.7 V 2.4 V 3.3 V
TA =
85 C
TA =
105 C
VDD = 3.3 V
Backup SRAM OFF, RTC and

LSE OFF
1.7
1.9
2.3
5(3)
15(3)
31(3)
Backup SRAM ON, RTC and

LSE OFF
2.4
2.6
3.0
6(3)
20(3)
40(3)
Backup SRAM OFF, RTC ON

and LSE in low drive mode
2.1
2.4
2.9
19
39

and LSE in medium low drive
mode
2.1
2.4
2.9
19
39
2.2
2.5
3.0
20
40
2.3
2.6
3.1
20
42
Backup SRAM ON, RTC ON

2.7
3.0
3.6
23
49

and LSE in Medium low drive
mode
2.7
3.0
3.6
23
49

and LSE in Medium high drive
mode
2.8
3.1
3.7
24
50

and LSE in High drive mode
2.9
3.2
3.8
25
51

and LSE in medium high drive
Supply current mode
IDD_STBY in Standby
mode
and LSE in high drive mode
1. PDR is OFF for VDD=1.7V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by
additional 1.2 A.
3. Based on characterization, tested in production.
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Unit
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STM32F756xx
Table 33. Typical and maximum current consumptions in VBAT mode
Symbol
Parameter
Typ
Max(2)
TA =25 C
TA =85 C TA =105 C
VBAT = VBAT= VBAT=

1.7 V 2.4 V 3.3 V
VBAT = 3.6 V
Conditions(1)
Backup SRAM OFF, RTC and

LSE OFF
0.03
0.03
0.04
0.2
0.4
Backup SRAM ON, RTC and

LSE OFF
0.74
0.75
0.78
3.0
7.0

0.40
0.52
0.72
2.8
6.5

and LSE in medium low drive
mode
0.40
0.52
0.72
2.8
6.5

Supply current and LSE in medium high drive
IDD_VBAT
in VBAT mode mode
0.54
0.64
0.85
3.3
7.6

and LSE in high drive mode
0.62
0.73
0.94
3.6
8.4
Backup SRAM ON, RTC ON and

LSE in low drive mode
1.06
1.18
1.41
5.4
12.7

LSE in Medium low drive mode
1.16
1.28
1.51
5.8
13.6

LSE in Medium high drive mode
1.18
1.3
1.54
5.9
13.8

LSE in High drive mode
1.36
1.48
1.73
6.7
15.5
Unit
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

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Figure 25. Typical VBAT current consumption (RTC ON/BKP SRAM OFF and
LSE in low drive mode)
,''B9%$7X$
s
s
s
s
s
s
s
s
s
d
069
LSE in medium low drive mode)
,''B9%$7X$
s
s
s
s
s
s
s
s
s
d
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STM32F756xx
LSE in medium high drive mode)
,''B9%$7X$
s
s
s
s
s
s
s
s
s
d
069
LSE in high drive mode)
,''B9%$7X$
s
s
s
s
s
s
s
s
s
d
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LSE in high medium drive mode)
,''B9%$7X$
s
s
s
s
s
s
s
s
s
d
069
I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 56: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution:
Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (see Table 35: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
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pin circuitry and to charge/discharge the capacitive load (internal or external) connected to
the pin:
I SW = V DD f SW C
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
Table 34. Switching output I/O current consumption(1)
I/O toggling
Symbol
Parameter
Conditions
CEXT = 0 pF
C = CINT + CS + CEXT
IDDIO
I/O switching
Current
CEXT = 10 pF
frequency (fsw)
MHz
Typ
Typ
VDD = 3.3 V
VDD = 1.8 V
0.1
0.1
0.4
0.2
25
1.1
0.7
50
2.4
1.3
60
3.1
1.6
84
4.3
2.4
90
4.9
2.6
100
5.4
2.8
108
5.6
0.2
0.1
0.6
0.3
25
1.8
1.1
50
3.1
2.3
60
4.6
3.4
84
9.7
3.6
90
10.12
5.2
100
14.92
5.4
108
18.11
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Unit
mA
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Table 34. Switching output I/O current consumption(1) (continued)

I/O toggling
Symbol
Parameter
Conditions
frequency (fsw)
MHz
Typ
Typ
VDD = 3.3 V
VDD = 1.8 V
0.3
0.1
1.0
0.5
25
3.5
1.6
50
5.9
4.2
60
10.0
4.4
84
19.12
5.8
90
19.6
0.3
0.2
1.3
0.7
25
3.5
2.3
50
10.26
5.19
60
16.53
CEXT = 22 pF
I/O switching
Current
IDDIO
CEXT = 33 pF
1. CINT + CS, PCB board capacitance including the pad pin is estimated to15 pF.
On-chip peripheral current consumption

The MCU is placed under the following conditions:
At startup, all I/O pins are in analog input configuration.
All peripherals are disabled unless otherwise mentioned.
I/O compensation cell enabled.
The ART/L1-cache is ON.
Scale 1 mode selected, internal digital voltage V12 = 1.32 V.
HCLK is the system clock. fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.

The given value is calculated by measuring the difference of current consumption
118/228
with all peripherals clocked off
with only one peripheral clocked on
fHCLK = 216 MHz (Scale 1 + over-drive ON), fHCLK = 168 MHz (Scale 2),
fHCLK = 144 MHz (Scale 3)
Ambient operating temperature is 25 C and VDD=3.3 V.
DocID027589 Rev 4
Unit
mA
STM32F756xx
Table 35. Peripheral current consumption
IDD(Typ)(1)
Peripheral
AHB1
(up to
216 MHz)
Scale 2
Scale 3
GPIOA
2.2
2.1
1.9
GPIOB
2.1
1.8
1.7
GPIOC
2.3
2.0
1.9
GPIOD
2.2
1.9
1.8
GPIOE
2.2
1.9
1.8
GPIOF
2.2
1.9
1.8
GPIOG
2.1
1.8
1.7
GPIOH
2.0
1.7
1.7
GPIOI
2.3
2.0
1.7
GPIOJ
2.2
1.9
1.7
GPIOK
2.0
1.7
1.7
CRC
1.0
0.9
0.8
BKPSRAM
0.8
0.7
0.6
DMA1
2.7 x N + 5.1
2.6 x N + 4.7
2.2 x N + 4
DMA2
2.2 x N + 4.9
2.6 x N + 4.4
2.2 x N + 4.1
DMA2D
87.1
82.5
69.6
ETH_MAC
ETH_MAC_TX
ETH_MAC_RX
ETH_MAC_PTP
42.1
39.7
34.1
57.5
54.4
47.6
DCMI
5.1
4.7
4.0
CRYP
3.0
2.6
2.4
HASH
4.2
3.7
3.3
RNG
2.8
2.4
2.3
USB_OTG_FS
31.8
29.9
25.8
FMC
18.9
17.7
15.2
QSPI
23.2
21.8
18.5
21.06
20.3
17.2
OTG_HS
OTG_HS+ULPI
AHB2
(up to
216 MHz)
AHB3
(up to
216 MHz)
Unit
Scale 1
A/MHz
A/MHz
A/MHz
Bus matrix(2)
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Table 35. Peripheral current consumption (continued)
IDD(Typ)(1)
Peripheral
Scale 2
Scale 3
TIM2
19.8
18.7
16.1
TIM3
16.6
15.1
13.6
TIM4
16.2
15.1
13.3
TIM5
19
17.8
15.8
TIM6
2.7
2.5
TIM7
2.7
2.5
TIM12
12.4
11.3
10.3
TIM13
5.3
TIM14
5.3
LPTIM1
9.4
8.7
8.1
1.8
1.6
1.4
2.9
2.8
SPI3/I2S3(3)
3.2
2.9
2.8
SPDIFRX
2.2
1.7
USART2
12.8
12
10.8
USART3
15.6
14.2
13.1
UART4
11.8
10.7
9.7
UART5
11.2
10
9.2
I2C1
9.8
8.7
7.8
I2C2
8.6
7.8
7.2
I2C3
8.6
7.8
7.2
I2C4
12
10.9
9.7
CAN1
6.8
5.6
CAN2
6.8
5.8
CEC
0.7
0.8
PWR
1.2
0.9
0.8
2.7
2.5
UART7
12.4
11.6
10
UART8
10.4
9.3
8.6
WWDG
(3)
SPI2/I2S2
APB1
(up to
54 MHz)
(4)
DAC
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DocID027589 Rev 4
A/MHz
STM32F756xx
Table 35. Peripheral current consumption (continued)
IDD(Typ)(1)
Peripheral
APB2
(up to
108 MHz)
Unit
Scale 1
Scale 2
Scale 3
TIM1
25.2
23.9
20.4
TIM8
25.3
24
20.4
USART1
10.3
9.8
8.2
USART6
10.1
9.7
8.1
ADC1(5)
4.5
4.4
3.5
ADC2
(5)
4.5
4.4
3.5
ADC3
(5)
4.5
4.4
3.3
SDMMC1
8.5
7.9
6.7
SPI1/I2S1(3)
3.1
2.5
SPI4
3.1
2.5
SYSCFG
1.5
1.4
TIM9
8.8
8.4
6.9
TIM10
5.6
5.2
4.3
TIM11
5.4
5.2
4.3
SPI5
2.8
2.2
SPI6
2.8
2.2
SAI1
3.4
3.3
2.6
SAI2
3.3
3.2
2.5
LTDC
56.7
53.8
45.7
A/MHz
1. When the I/O compensation cell is ON, IDD typical value increases by 0.22 mA.
2. The BusMatrix is automatically active when at least one master is ON.
3. To enable an I2S peripheral, first set the I2SMOD bit and then the I2SE bit in the SPI_I2SCFGR register.
4. When the DAC is ON and EN1/2 bits are set in DAC_CR register, add an additional power consumption of
0.75 mA per DAC channel for the analog part.
5. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of
1.73 mA per ADC for the analog part.
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Wakeup time from low-power modes

The wakeup times given in Table 36 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
For Stop or Sleep modes: the wakeup event is WFE.
WKUP (PA0) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD=3.3 V.
Table 36. Low-power mode wakeup timings
Symbol
tWUSLEEP(2)
Parameter
Wakeup from Sleep
Conditions
Typ(1)
Max(1)
Unit
13
13
CPU
clock
cycles
14
14.9
104.1
107.6
21.4
24.2
111.5
116.5
Main regulator is ON
Main regulator is ON and Flash
memory in Deep power down mode
tWUSTOP(2)
Wakeup from Stop mode

with MR/LP regulator in
normal mode
Low power regulator is ON
Low power regulator is ON and Flash
memory in Deep power down mode
tWUSTOP(2)
Main regulator in under-drive mode

(Flash memory in Deep power-down
Wakeup from Stop mode mode)
with MR/LP regulator in Low power regulator in under-drive
Under-drive mode
mode
(Flash memory in Deep power-down
mode )
tWUSTDBY Wakeup from Standby

(2)
mode
s
107.4
113.2
112.7
120
Exit Standby mode on rising edge
308
313
Exit Standby mode on falling edge
307
313

2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first
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5.3.9
External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 56: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 30.
The characteristics given in Table 37 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 17.
Table 37. High-speed external user clock characteristics
Symbol
Parameter
fHSE_ext
External user clock source

frequency(1)
VHSEH
OSC_IN input pin high level voltage
VHSEL
OSC_IN input pin low level voltage
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
tr(HSE)
tf(HSE)
Cin(HSE)
Conditions
Typ
Max
Unit
50
MHz
0.7VDD
VDD
VSS
0.3VDD
ns
OSC_IN rise or fall
time(1)
10
pF
45
55
VSS VIN VDD
OSC_IN input capacitance(1)
DuCy(HSE) Duty cycle

IL
Min
OSC_IN Input leakage current
Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 56: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 31.
The characteristics given in Table 38 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 17.
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Table 38. Low-speed external user clock characteristics

Symbol
Parameter
Conditions
Min
Typ
Max
Unit
32.768
1000
kHz
0.7VDD
VDD
VSS
0.3VDD
fLSE_ext
User External clock source

frequency(1)
VLSEH
OSC32_IN input pin high level

voltage
VLSEL
OSC32_IN input pin low level voltage
tw(LSE)
tf(LSE)
OSC32_IN high or low time(1)
450
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1)
50
Cin(LSE)
DuCy(LSE)
IL
ns
OSC32_IN input capacitance(1)
pF
Duty cycle
30
70
VSS VIN VDD
OSC32_IN Input leakage current
Figure 30. High-speed external clock source AC timing diagram
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Figure 31. Low-speed external clock source AC timing diagram
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High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 39. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
Table 39. HSE 4-26 MHz oscillator characteristics(1)
Symbol
Parameter
fOSC_IN
RF
IDD
ACCHSE(2)
Conditions
Min
Typ
Max
Unit
Oscillator frequency
26
MHz
Feedback resistor
200
VDD=3.3 V,
ESR= 30 ,
CL=5 pF@25 MHz
450
VDD=3.3 V,
ESR= 30 ,
CL=10 pF@25 MHz
530
500
500
ppm
Startup
mA/V
VDD is stabilized
ms
HSE current consumption
HSE accuracy
Gm_crit_max Maximum critical crystal gm

tSU(HSE(3)
Startup time
2. This parameter depends on the crystal used in the application. The minimum and maximum values must
be respected to comply with USB standard specifications.
3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is based on characterization results. It is measured for a standard crystal
resonator and it can vary significantly with the crystal manufacturer.
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For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 32). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note:
For information on selecting the crystal, refer to the application note AN2867 Oscillator
design guide for ST microcontrollers available from the ST website www.st.com.
Figure 32. Typical application with an 8 MHz crystal
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Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 40. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
Symbol
IDD
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Parameter
LSE current consumption
Conditions
Min
Typ
Max
LSEDRV[1:0]=00
Low drive capability
250
LSEDRV[1:0]=10
Medium low drive capability
300
LSEDRV[1:0]=01
Medium high drive capability
370
LSEDRV[1:0]=11
High drive capability
480
DocID027589 Rev 4
Unit
nA
STM32F756xx
Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) (continued)
Symbol
Parameter
Gm_crit_max Maximum critical crystal gm
tSU(2)
Conditions
Min
Typ
Max
LSEDRV[1:0]=00
Low drive capability
0.48
LSEDRV[1:0]=10
Medium low drive capability
0.75
LSEDRV[1:0]=01
Medium high drive capability
1.7
LSEDRV[1:0]=11
High drive capability
2.7
VDD is stabilized
start-up time
Unit
A/V
2. Guaranteed by characterization results. tSU is the start-up time measured from the moment it is enabled
(by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard
crystal resonator and it can vary significantly with the crystal manufacturer.
Note:
For information on selecting the crystal, refer to the application note AN2867 Oscillator
design guide for ST microcontrollers available from the ST website www.st.com.
Figure 33. Typical application with a 32.768 kHz crystal
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Internal clock source characteristics

The parameters given in Table 41 and Table 42 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 17.
High-speed internal (HSI) RC oscillator

Table 41. HSI oscillator characteristics (1)
Symbol
fHSI
Parameter
Conditions
Min
Typ
Max
Unit
Frequency
16
MHz
HSI user trimming step(2)
4.5
(3)
ACCHSI
TA = 40 to 105 C
C(4)
HSI oscillator startup time
2.2
HSI oscillator power consumption
60
80
TA = 10 to 85
Accuracy of the HSI oscillator
TA = 25
tsu(HSI)(2)
IDD(HSI)
(2)
C(3)
1. VDD = 3.3 V, TA = 40 to 105 C unless otherwise specified.

4. Factory calibrated, parts not soldered.
Figure 34. HSI deviation versus temperature
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Low-speed internal (LSI) RC oscillator

Table 42. LSI oscillator characteristics (1)
Symbol
Parameter
fLSI(2)
tsu(LSI)
Frequency
Min
Typ
Max
Unit
17
32
47
kHz
(3)
LSI oscillator startup time
15
40
(3)
LSI oscillator power consumption
0.4
0.6
IDD(LSI)
1. VDD = 3 V, TA = 40 to 105 C unless otherwise specified.

Figure 35. LSI deviation versus temperature
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5.3.11
069
PLL characteristics
The parameters given in Table 43 and Table 44 are derived from tests performed under
Table 43. Main PLL characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
fPLL_IN
PLL input
clock(1)
0.95(2)
2.10
fPLL_OUT
PLL multiplier output clock
24
216
fPLL48_OUT
48 MHz PLL multiplier output

clock
48
75
fVCO_OUT
PLL VCO output
100
432
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MHz
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Table 43. Main PLL characteristics (continued)
Symbol
tLOCK
Parameter
Conditions
PLL lock time
Min
Typ
Max
VCO freq = 100 MHz
75
200
VCO freq = 432 MHz
100
300
25
150
15
200
RMS
Cycle-to-cycle jitter
System clock
216 MHz
peak
to
peak
RMS
peak
to
peak
Period Jitter
Jitter(3)
Unit
s
ps
Main clock output (MCO) for

RMII Ethernet
Cycle to cycle at 50 MHz

on 1000 samples
32
Main clock output (MCO) for MII

Ethernet

on 1000 samples
40
Bit Time CAN jitter

on 1000 samples
330
IDD(PLL)(4)
PLL power consumption on VDD
VCO freq = 100 MHz

VCO freq = 432 MHz
0.15
0.45
0.40
0.75
mA
IDDA(PLL)(4)
PLL power consumption on VDDA
VCO freq = 100 MHz

VCO freq = 432 MHz
0.30
0.55
0.40
0.85
mA
1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between PLL and PLLI2S.
3. The use of 2 PLLs in parallel could degraded the Jitter up to +30%.
Table 44. PLLI2S characteristics

Symbol
Parameter
Conditions
Min
Typ
Max
fPLLI2S_IN
PLLI2S input clock(1)
0.95(2)
2.10
fPLLI2SP_OUT
PLLI2S multiplier output clock for

SPDIFRX
216
fPLLI2SQ_OUT

SAI
216
fPLLI2SR_OUT

I2S
216
fVCO_OUT
PLLI2S VCO output
100
432
tLOCK
PLLI2S lock time
VCO freq = 100 MHz
75
200
VCO freq = 432 MHz
100
300
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MHz
STM32F756xx
Table 44. PLLI2S characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
RMS
90
peak
to
peak
280
ps
Average frequency of
12.288 MHz
N = 432, R = 5
on 1000 samples
90
ps
WS I2S clock jitter
Cycle to cycle at 48 KHz

on 1000 samples
400
ps
IDD(PLLI2S)(4)
PLLI2S power consumption on

VDD
VCO freq = 100 MHz

VCO freq = 432 MHz
0.15
0.45
0.40
0.75
mA
IDDA(PLLI2S)(4)
PLLI2S power consumption on

VDDA
VCO freq = 100 MHz

VCO freq = 432 MHz
0.30
0.55
0.40
0.85
mA
Unit
Cycle to cycle at
12.288 MHz on
48KHz period,
N=432, R=5
Master I2S clock jitter
(3)
Jitter
Unit
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
3. Value given with main PLL running.
Table 45. PLLISAI characteristics

Symbol
Parameter
Conditions
Min
Typ
Max
fPLLSAI_IN
PLLSAI input clock(1)
0.95(2)
2.10
fPLLSAIP_OUT
PLLSAI multiplier output clock

for 48 MHz
48
75
fPLLSAIQ_OUT

for SAI
216
fPLLSAIR_OUT

for LCD-TFT
216
fVCO_OUT
PLLSAI VCO output
100
432
tLOCK
PLLSAI lock time
VCO freq = 100 MHz
75
200
VCO freq = 432 MHz
100
300
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Table 45. PLLISAI characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
RMS
90
peak
to
peak
280
ps
Average frequency of
12.288 MHz
N = 432, R = 5
on 1000 samples
90
ps
FS clock jitter
Cycle to cycle at 48 KHz

on 1000 samples
400
ps
IDD(PLLSAI)(4)
PLLSAI power consumption on

VDD
VCO freq = 100 MHz

VCO freq = 432 MHz
0.15
0.45
0.40
0.75
mA
IDDA(PLLSAI)(4)
PLLSAI power consumption on

VDDA
VCO freq = 100 MHz

VCO freq = 432 MHz
0.30
0.55
0.40
0.85
mA
Cycle to cycle at
12.288 MHz on
48KHz period,
N=432, R=5
Master SAI clock jitter
(3)
Jitter
Unit
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
3. Value given with main PLL running.
5.3.12
PLL spread spectrum clock generation (SSCG) characteristics

The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic
interferences (see Table 52: EMI characteristics). It is available only on the main PLL.
Table 46. SSCG parameters constraint
Symbol
Parameter
Min
Typ
Max(1)
Unit
fMod
Modulation frequency
10
KHz
md
Peak modulation depth
0.25
MODEPER * INCSTEP
215
Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
MODEPER = round [ f PLL_IN ( 4 f Mod ) ]
fPLL_IN and fMod must be expressed in Hz.

As an example:
If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by
equation 1:
6
MODEPER = round [ 10 ( 4 10 ) ] = 250
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Equation 2
Equation 2 allows to calculate the increment step (INCSTEP):
INCSTEP = round [ ( ( 2
15
1 ) md PLLN ) ( 100 5 MODEPER ) ]
fVCO_OUT must be expressed in MHz.

With a modulation depth (md) = 2 % (4 % peak to peak), and PLLN = 240 (in MHz):
INCSTEP = round [ ( ( 2
15
1 ) 2 240 ) ( 100 5 250 ) ] = 126md(quantitazed)%
An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
md quantized % = ( MODEPER INCSTEP 100 5 ) ( ( 2
15
1 ) PLLN )
As a result:
md quantized % = ( 250 126 100 5 ) ( ( 2
15
1 ) 240 ) = 2.002%(peak)
Figure 36 and Figure 37 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.
Figure 36. PLL output clock waveforms in center spread mode
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Figure 37. PLL output clock waveforms in down spread mode

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5.3.13
Memory characteristics
Flash memory
The characteristics are given at TA = 40 to 105 C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 47. Flash memory characteristics
Symbol
IDD
Parameter
Supply current
Conditions
Min
Typ
Max
Write / Erase 8-bit mode, VDD = 1.7 V
14
17
24
Unit
mA
Table 48. Flash memory programming

Symbol
tprog
Parameter
Word programming time
tERASE32KB Sector (32 KB) erase time
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Conditions
Min(1)
Typ
Max(1) Unit
Program/erase parallelism
(PSIZE) = x 8/16/32
16
100(2)
(PSIZE) = x 8
400
800
(PSIZE) = x 16
250
600
(PSIZE) = x 32
200
500
(PSIZE) = x 8
1100
2400
(PSIZE) = x 16
800
1400
(PSIZE) = x 32
500
1100
DocID027589 Rev 4
ms
ms
STM32F756xx
Table 48. Flash memory programming (continued)
Symbol
Parameter
tME
Vprog
Mass erase time
Programming voltage
Conditions
Min(1)
Typ
Max(1) Unit
(PSIZE) = x 8
2.1
(PSIZE) = x 16
1.5
2.6
(PSIZE) = x 32
(PSIZE) = x 8
16
(PSIZE) = x 16
5.6
11.2
(PSIZE) = x 32
32-bit program operation
2.7
2.1
3.6
1.7
3.6

2. The maximum programming time is measured after 100K erase operations.
Table 49. Flash memory programming with VPP

Symbol
Parameter
tprog
Double word programming
tERASE32KB
Sector (32 KB) erase time

tME
Conditions
Min(1)
Typ
Max(1)
Unit
16
100(2)
180
450
900
6.9
TA = 0 to +40 C
VDD = 3.3 V
VPP = 8.5 V
Mass erase time
ms
Vprog
Programming voltage
2.7
3.6
VPP
VPP voltage range
IPP
Minimum current sunk on

the VPP pin
10
mA
Cumulative time during

which VPP is applied
hour
tVPP(3)
2. The maximum programming time is measured after 100K erase operations.
3. VPP should only be connected during programming/erasing.
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Table 50. Flash memory endurance and data retention
Value
Symbol
NEND
tRET
Parameter
Conditions
Endurance
Data retention
TA = 40 to +85 C (6 suffix versions)

TA = 40 to +105 C (7 suffix versions)
10
1 kcycle(2) at TA = 85 C
30
1 kcycle
(2)
10 kcycles
Unit
Min(1)
at TA = 105 C
10
(2)
20
at TA = 55 C
kcycles
Years

2. Cycling performed over the whole temperature range.
5.3.14
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.

The test results are given in Table 51. They are based on the EMS levels and classes
defined in application note AN1709.
Table 51. EMS characteristics
Symbol
Parameter
Conditions
VFESD
VDD = 3.3 V, LQFP176, TA =

Voltage limits to be applied on any I/O pin to
+25 C, fHCLK = 216 MHz, conforms
induce a functional disturbance
to IEC 61000-4-2
VEFTB
Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, TFBGA216, TA

=+25 C, fHCLK = 216 MHz,
conforms to IEC 61000-4-2
Level/
Class
2B
4A
As a consequence, it is recommended to add a serial resistor (1 k) located as close as

possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm
on PCB).
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Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
Table 52. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Unit
25/200 MHz
0.1 to 30 MHz
VDD = 3.6 V, TA = 25 C, TFBGA216 package,
30 to 130 MHz
conforming to IEC61967-2 ART/L1-cache OFF,
over-drive ON, all peripheral clocks enabled, clock 130 MHz to 1GHz
dithering disabled.
EMI Level
SEMI
0.1 to 30 MHz
conforming to IEC61967-2 ART/L1-cache ON,
30 to 130 MHz
Peak level over-drive ON, all peripheral clocks enabled, clock
130 MHz to 1GHz
dithering disabled.
EMI level
0.1 to 30 MHz
30 to 130 MHz
conforming to IEC61967-2 ART/L1-cache ON,
over-drive ON, all peripheral clocks enabled, clock 130 MHz to 1GHz
dithering enabled.
EMI level
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dBV
11
3
4
5
dBV
14
3
-9
-7
dBV
-5
1.5
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Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts (n+1) supply pins). This test
conforms to the ANSI/ESDA/JEDEC JS-001-2012 and ANSI/ESD S5.3.1-2009 standards.
Table 53. ESD absolute maximum ratings
Symbol
VESD(HBM)
Ratings
Conditions
Electrostatic discharge
voltage (human body model)
TA = +25 C conforming to
ANSI/ESDA/JEDEC JS-001-2012
TA = +25 C conforming to ANSI/ESD

S5.3.1-2009, LQFP100, LQFP144,
Electrostatic discharge
VESD(CDM)
LQFP176, LQFP208, WLCSP143,
voltage (charge device model)
UFBGA176, TFBGA100 and TFBGA216
packages
Class
Maximum
value(1)
2000
C3
250
Unit
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.

Table 54. Electrical sensitivities
Symbol
LU
5.3.16
Parameter
Static latch-up class
Conditions
TA = +105 C conforming to JESD78A
Class
II level A
I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibilty to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
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The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of
5 A/+0 A range), or other functional failure (for example reset, oscillator frequency
deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 55.
Table 55. I/O current injection susceptibility(1)

Functional susceptibility
Symbol
IINJ
Description
Negative
injection
Positive
injection
Injected current on BOOT pin
NA
Injected current on NRST pin
NA
Injected current on PA0, PC0 pins
NA
Injected current on any other FT pin
NA
Injected current on any other pins
+5
Unit
mA
1. NA = not applicable.
Note:
It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.
5.3.17
I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are
derived from tests performed under the conditions summarized in Table 17. All I/Os are
CMOS and TTL compliant.
Table 56. I/O static characteristics
Symbol
Parameter
FT, TTa and NRST I/O input
low level voltage
VIL
BOOT I/O input low level
voltage
Conditions
Min
Typ
1.7 VVDD3.6 V
Max
Unit
0.35VDD 0.04
(1)
0.3VDD(2)
1.75 VVDD 3.6 V,
40 CTA 105 C
1.7 VVDD 3.6 V,

0 CTA 105 C
DocID027589 Rev 4
0.1VDD+0.1(1)
-
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STM32F756xx
Table 56. I/O static characteristics (continued)
Symbol
Parameter
high level voltage(5)
VIH
BOOT I/O input high level

voltage
hysteresis
VHYS
BOOT I/O input hysteresis
RPD
CIO(8)
Weak pulldown
equivalent
resistor(7)
Max
1.7 VVDD3.6 V
1.75 VVDD 3.6 V,
40 CTA 105 C
1.7 VVDD 3.6 V,
0 CTA 105 C
0.45VDD+0.3
0.7VDD(2)
0.17VDD+0.7(1)
10%VDD(3)
1.7 VVDD3.6 V
1.75 VVDD 3.6 V,
40 CTA 105 C
VSS VIN VDD
VIN = 5 V
30
40
50
PA10/PB12
(OTG_FS_ID
,OTG_HS_ID
)
10
14
All pins
except for
PA10/PB12
(OTG_FS_ID
,OTG_HS_ID
)
30
40
50
10
14
All pins
except for
PA10/PB12
(OTG_FS_ID
,OTG_HS_ID
)
1.7 VVDD 3.6 V,

0 CTA 105 C
VIN = VSS
VIN = VDD
PA10/PB12
(OTG_FS_ID
,OTG_HS_ID
)
I/O pin capacitance
Unit
(5)
RPU
Typ
(1)
I/O FT input leakage current
Weak pull-up
equivalent
resistor(6)
Min
0.1
I/O input leakage current (4)

Ilkg
Conditions
pF
2. Tested in production.
3. With a minimum of 200 mV.
4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 55: I/O
current injection susceptibility
5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be
higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 55: I/O current injection
susceptibility
6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the
series resistance is minimum (~10% order).
140/228
DocID027589 Rev 4
STM32F756xx
7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the
series resistance is minimum (~10% order).
8.
Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results.
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements for FT I/Os is shown in Figure 38.
Figure 38. FT I/O input characteristics
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Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to 8 mA, and sink or
source up to 20 mA (with a relaxed VOL/VOH) except PC13, PC14, PC15 and PI8 which
can sink or source up to 3mA. When using the PC13 to PC15 and PI8 GPIOs in output
mode, the speed should not exceed 2 MHz with a maximum load of 30 pF.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2. In particular:
The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 15).
The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Table 15).
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STM32F756xx
Output voltage levels

Unless otherwise specified, the parameters given in Table 57 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 17. All I/Os are CMOS and TTL compliant.
Table 57. Output voltage characteristics
Symbol
Parameter
Conditions
Min
Max
0.4
VDD 0.4
VDD 0.4
Output low level voltage for an I/O pin
TTL port(2)
IIO =+8mA
2.7 V VDD 3.6 V
0.4
VOH (3)
Output high level voltage for an I/O pin

except PC14
TTL port(2)
IIO =-8mA
2.7 V VDD 3.6 V
2.4
VOL(1)
IIO = +20 mA
2.7 V VDD 3.6 V
1.3(4)
VOH(3)

except PC14
IIO = -20 mA
VDD 1.3(4)
2.7 V VDD 3.6 V
VOL(1)
IIO = +6 mA
1.8 V VDD 3.6 V
0.4(4)
VOH(3)

except PC14
IIO = -6 mA
1.8 V VDD 3.6 V
VDD 0.4(4)
VOL(1)
IIO = +4 mA
1.7 V VDD 3.6V
0.4(5)
VOH(3)

except PC14
IIO = -4 mA
1.7 V VDD 3.6V
VDD 0.4(5)
VOH(3)
Output high level voltage for PC14
IIO = -1 mA
1.7 V VDD 3.6V
VDD 0.4(5)
Unit
port(2)
VOL(1)
VOH(3)

except PC14
CMOS
IIO = +8 mA
2.7 V VDD 3.6 V
CMOS port(2)
IIO = -8 mA
2.7 V VDD 3.6 V
CMOS port(2)
VOH(3)
VOL
(1)
Output high level voltage for PC14
IIO = -2 mA
2.7 V VDD 3.6 V
V
-
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 15.
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 15 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
4. Based on characterization data.
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STM32F756xx
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 39 and
Table 58, respectively.
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 17.
Table 58. I/O AC characteristics(1)(2)
OSPEEDRy
[1:0] bit
value(1)
Symbol
fmax(IO)out
Parameter
Maximum
frequency(3)
00
tf(IO)out/
tr(IO)out
fmax(IO)out
Output high to low level fall

time and output low to high
level rise time
Maximum frequency(3)
01
tf(IO)out/
tr(IO)out
fmax(IO)out

level rise time
10
tf(IO)out/
tr(IO)out

level rise time
Conditions
Min
Typ
Max
CL = 50 pF, VDD 2.7 V
CL = 50 pF, VDD 1.7 V
CL = 10 pF, VDD 2.7 V
CL = 10 pF, VDD 1.8 V
CL = 10 pF, VDD 1.7 V
CL = 50 pF, VDD = 1.7 V to

3.6 V
100
CL = 50 pF, VDD 2.7 V
25
CL = 50 pF, VDD 1.8 V
12.5
CL = 50 pF, VDD 1.7 V
10
CL = 10 pF, VDD 2.7 V
50
CL = 10 pF, VDD 1.8 V
20
CL = 10 pF, VDD 1.7 V
12.5
CL = 50 pF, VDD 2.7 V
10
CL = 10 pF, VDD 2.7 V
CL = 50 pF, VDD 1.7 V
20
CL = 10 pF, VDD 1.7 V
10
CL = 40 pF, VDD 2.7 V
50(4)
CL = 10 pF, VDD 2.7 V
100(4)
CL = 40 pF, VDD 1.7 V
25
CL = 10 pF, VDD 1.8 V
50
CL = 10 pF, VDD 1.7 V
42.5
CL = 40 pF, VDD 2.7 V
CL = 10 pF, VDD 2.7 V
CL = 40 pF, VDD 1.7 V
10
CL = 10 pF, VDD 1.7 V
DocID027589 Rev 4
Unit
MHz
ns
MHz
ns
MHz
ns
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STM32F756xx
Table 58. I/O AC characteristics(1)(2) (continued)

OSPEEDRy
[1:0] bit
value(1)
Symbol
fmax(IO)out
Parameter
Conditions
11
tf(IO)out/
tr(IO)out
tEXTIpw

level rise time
Min
Typ
Max
CL = 30 pF, VDD 2.7 V
100(4)
CL = 30 pF, VDD 1.8 V
50
CL = 30 pF, VDD 1.7 V
42.5
CL = 10 pF, VDD 2.7 V
180(4)
CL = 10 pF, VDD 1.8 V
100
CL = 10 pF, VDD 1.7 V
72.5
CL = 30 pF, VDD 2.7 V
CL = 30 pF, VDD 1.8 V
CL = 30 pF, VDD 1.7 V
CL = 10 pF, VDD 2.7 V
2.5
CL = 10 pF, VDD 1.8 V
3.5
CL = 10 pF, VDD 1.7 V
10
Pulse width of external signals

detected by the EXTI
controller
Unit
MHz
ns
ns
2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F75xxx and STM32F74xxx reference
manual for a description of the GPIOx_SPEEDR GPIO port output speed register.
3. The maximum frequency is defined in Figure 39.
4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used.
Figure 39. I/O AC characteristics definition

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144/228
DocID027589 Rev 4
DLG
STM32F756xx
5.3.18
NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 56: I/O static characteristics).
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 17.
Table 59. NRST pin characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RPU
Weak pull-up equivalent resistor(1)
VIN = VSS
30
40
50
100
ns
VDD > 2.7 V
300
ns
Internal Reset source
20
VF(NRST)
(2)
NRST Input filtered pulse
VNF(NRST)(2) NRST Input not filtered pulse

TNRST_OUT
Generated reset pulse duration
1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).
Figure 40. Recommended NRST pin protection

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1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 59. Otherwise the reset is not taken into account by the device.
DocID027589 Rev 4
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5.3.19
STM32F756xx
TIM timer characteristics

The parameters given in Table 60 are guaranteed by design.
Refer to Section 5.3.17: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 60. TIMx characteristics(1)(2)
Conditions(3)
Min
Max
Unit
AHB/APBx prescaler=1
or 2 or 4, fTIMxCLK =
216 MHz
tTIMxCLK
AHB/APBx
prescaler>4, fTIMxCLK =
108 MHz
tTIMxCLK
Timer external clock

frequency on CH1 to CH4 f
TIMxCLK = 216 MHz
fTIMxCLK/2
MHz
Timer resolution
16/32
bit
65536
65536
tTIMxCLK
Symbol
tres(TIM)
fEXT
ResTIM
tMAX_COUNT
Parameter
Timer resolution time
Maximum possible count

with 32-bit counter
1. TIMx is used as a general term to refer to the TIM1 to TIM12 timers.

3. The maximum timer frequency on APB1 or APB2 is up to 216 MHz, by setting the TIMPRE bit in the
RCC_DCKCFGR register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = HCLK, otherwise TIMxCLK =
4x PCLKx.
5.3.20
RTC characteristics
Table 61. RTC characteristics
5.3.21
Symbol
Parameter
Conditions
fPCLK1/RTCCLK frequency ratio
Any read/write operation

from/to an RTC register
Min
Max
12-bit ADC characteristics

performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 17.
Table 62. ADC characteristics
Symbol
VDDA
Parameter
Power supply
VREF+
Positive reference voltage
VREF-
Negative reference voltage
146/228
Conditions
VDDA VREF+ < 1.2 V
-
DocID027589 Rev 4
Min
Typ
Max
Unit
1.7(1)
3.6
1.7(1)
VDDA
STM32F756xx
Table 62. ADC characteristics (continued)
Symbol
fADC
fTRIG(2)
VAIN
RAIN(2)
Parameter
ADC clock frequency
External trigger frequency
Conversion voltage range(3)
External input impedance
RADC(2)(4) Sampling switch resistance

CADC(2)
Internal sample and hold

capacitor
Conditions
Min
Typ
Max
Unit
VDDA = 1.7(1) to 2.4 V
0.6
15
18
MHz
VDDA = 2.4 to 3.6 V
0.6
30
36
MHz
fADC = 30 MHz,
12-bit resolution
1764
kHz
17
1/fADC
0
(VSSA or VREFtied to ground)
VREF+
See Equation 1 for

details
50
pF
0.100
3(5)
1/fADC
0.067
2(5)
1/fADC
fADC = 30 MHz
0.100
16
480
1/fADC
fADC = 30 MHz
12-bit resolution
0.50
16.40
fADC = 30 MHz
10-bit resolution
0.43
16.34
fADC = 30 MHz
8-bit resolution
0.37
16.27
fADC = 30 MHz
6-bit resolution
0.30
16.20
tlat(2)
Injection trigger conversion

latency
fADC = 30 MHz
tlatr(2)
Regular trigger conversion

latency
fADC = 30 MHz
tS(2)
Sampling time
tSTAB(2)
Power-up time
tCONV(2)
Total conversion time (including

sampling time)
9 to 492 (tS for sampling +n-bit resolution for successive

approximation)
Sampling rate
fS(2)
(fADC = 30 MHz, and

tS = 3 ADC cycles)
1/fADC
12-bit resolution
Single ADC
Msps
12-bit resolution
Interleave Dual ADC
mode
3.75
Msps
12-bit resolution
Interleave Triple ADC
mode
Msps
DocID027589 Rev 4
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STM32F756xx
Table 62. ADC characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IVREF+(2)
ADC VREF DC current

consumption in conversion
mode
300
500
IVDDA(2)
ADC VDDA DC current

consumption in conversion
mode
1.6
1.8
mA
1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.17.2:
3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V.
5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 62.
Equation 1: RAIN max formula

R AIN
( k 0.5 )
- R ADC
= --------------------------------------------------------------N+2
f ADC C ADC ln ( 2
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.
Table 63. ADC static accuracy at fADC = 18 MHz

Symbol
ET
Parameter
Test conditions
Total unadjusted error
EO
Offset error
EG
Gain error
ED
Differential linearity error
EL
Integral linearity error
fADC =18 MHz

VDDA = 1.7 to 3.6 V
VREF = 1.7 to 3.6 V
VDDA VREF < 1.2 V
Typ
Max(1)
Unit
LSB

Symbol
ET
Parameter
Test conditions
EO
Offset error
EG
Gain error
ED
EL
fADC = 30 MHz,
RAIN < 10 k,
VDDA = 2.4 to 3.6 V,
VREF = 1.7 to 3.6 V,
VDDA VREF < 1.2 V
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DocID027589 Rev 4
Typ
Max(1)
1.5
2.5
1.5
1.5
Unit
LSB
STM32F756xx
Symbol
Parameter
Test conditions
ET
EO
Offset error
EG
Gain error
ED
EL
Typ
Max(1)
fADC =36 MHz,

VDDA = 2.4 to 3.6 V,
VREF = 1.7 to 3.6 V
VDDA VREF < 1.2 V
Unit
LSB
Table 66. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1)
Symbol
Parameter
Test conditions
ENOB
Effective number of bits
SINAD
Signal-to-noise and distortion ratio
SNR
Signal-to-noise ratio
THD
Total harmonic distortion
fADC =18 MHz

VDDA = VREF+= 1.7 V
Input Frequency = 20 KHz
Temperature = 25 C
Min
Typ
Max
Unit
10.3
10.4
bits
64
64.2
64
65
67
72
dB
Table 67. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)
Symbol
Parameter
Test conditions
ENOB
Effective number of bits
SINAD
Signal-to noise and distortion ratio
SNR
Signal-to noise ratio
THD
Total harmonic distortion
fADC =36 MHz

VDDA = VREF+ = 3.3 V
Input Frequency = 20 KHz
Temperature = 25 C
Min
Typ
Max
Unit
10.6
10.8
bits
66
67
64
68
70
72
dB
Note:
ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in
Section 5.3.17 does not affect the ADC accuracy.
DocID027589 Rev 4
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196
STM32F756xx
Figure 41. ADC accuracy characteristics
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1. See also Table 64.

2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Figure 42. Typical connection diagram using the ADC

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1. Refer to Table 62 for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.
150/228
DocID027589 Rev 4
STM32F756xx
General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 43 or Figure 44,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
Figure 43. Power supply and reference decoupling (VREF+ not connected to VDDA)
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1. VREF+ input is available on all the packages except TFBGA100 whereas the VREF is available only on
UFBGA176 and TFBGA216. When VREF- is not available, it is internally connected to VDDA and VSSA.
Figure 44. Power supply and reference decoupling (VREF+ connected to VDDA)
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1. VREF+ input is available on all the packages except TFBGA100, whereas the VREF is available only on
UFBGA176 and TFBGA216. When VREF- is not available, it is internally connected to VDDA and VSSA.
DocID027589 Rev 4
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196
5.3.22
STM32F756xx
Temperature sensor characteristics

Table 68. Temperature sensor characteristics
Symbol
Parameter
Min
Typ
Max
Unit
VSENSE linearity with temperature
Average slope
2.5
mV/C
Voltage at 25 C
0.76
tSTART(2)
Startup time
10
TS_temp(2)
ADC sampling time when reading the temperature (1 C accuracy)
10
TL(1)
Avg_Slope
(1)
V25(1)

Table 69. Temperature sensor calibration values

Symbol
Parameter
Memory address
TS_CAL1
TS ADC raw data acquired at temperature of 30 C, VDDA= 3.3 V
0x1FF0 F44C - 0x1FF0 F44D
TS_CAL2
TS ADC raw data acquired at temperature of 110 C, VDDA= 3.3 V
0x1FF0 F44E - 0x1FF0 F44F
5.3.23
VBAT monitoring characteristics

Table 70. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Resistor bridge for VBAT
50
Ratio on VBAT measurement
Error on Q
+1
ADC sampling time when reading the VBAT

1 mV accuracy
Er(1)
TS_vbat(2)(2)
2. Shortest sampling time can be determined in the application by multiple iterations.
5.3.24
Reference voltage
The parameters given in Table 71 are derived from tests performed under ambient
Table 71. internal reference voltage
Symbol
VREFINT
TS_vrefint(1)
VRERINT_s(2)
152/228
Parameter
Internal reference voltage
Conditions
Min
Typ
Max
Unit
40 C < TA < +105 C
1.18
1.21
1.24
10
VDD = 3V 10mV
mV
ADC sampling time when reading the

internal reference voltage
Internal reference voltage spread over the
temperature range
DocID027589 Rev 4
STM32F756xx
Table 71. internal reference voltage (continued)
Symbol
Parameter
TCoeff(2)
tSTART
(2)
Conditions
Min
Typ
Max
Unit
Temperature coefficient
30
50
ppm/C
Startup time
10
1. Shortest sampling time can be determined in the application by multiple iterations.

Table 72. Internal reference voltage calibration values

Symbol
Parameter
VREFIN_CAL
5.3.25
Memory address
Raw data acquired at temperature of 30 C VDDA = 3.3 V
0x1FF0 F44A - 0x1FF0 F44B
DAC electrical characteristics

Table 73. DAC characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Comments
-
VDDA
Analog supply voltage
1.7(1)
3.6
VREF+
Reference supply voltage
1.7(1)
3.6
VSSA
Ground
RLOAD(2)
Resistive load with buffer ON
RO(2)
Impedance output with buffer

OFF
15
When the buffer is OFF, the Minimum

k resistive load between DAC_OUT and
VSS to have a 1% accuracy is 1.5 M
Capacitive load
50
pF
DAC_OUT Lower DAC_OUT voltage

with buffer ON
min(2)
0.2
DAC_OUT Higher DAC_OUT voltage

max(2)
with buffer ON
VDDA
0.2
DAC_OUT Lower DAC_OUT voltage

with buffer OFF
min(2)
0.5
mV
DAC_OUT Higher DAC_OUT voltage

max(2)
with buffer OFF
VREF+
1LSB
170
240
CLOAD(2)
IVREF+(4)
DAC DC VREF current

consumption in quiescent
mode (Standby mode)
A
-
50
75
DocID027589 Rev 4
VREF+ VDDA
Maximum capacitive load at DAC_OUT

pin (when the buffer is ON).
It gives the maximum output excursion of
the DAC.
It corresponds to 12-bit input code
(0x0E0) to (0xF1C) at VREF+ = 3.6 V and
(0x1C7) to (0xE38) at VREF+ = 1.7 V
It gives the maximum output excursion of

the DAC.
With no load, worst code (0x800) at
VREF+ = 3.6 V in terms of DC
consumption on the inputs
With no load, worst code (0xF1C) at
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Table 73. DAC characteristics (continued)
Symbol
Min
Typ
Max
Unit
Comments
280
380
With no load, middle code (0x800) on the

inputs
475
625
With no load, worst code (0xF1C) at

Differential non linearity

Difference between two
consecutive code-1LSB)
0.5
LSB Given for the DAC in 10-bit configuration.
INL(4)
Integral non linearity

(difference between
measured value at Code i
and the value at Code i on a
line drawn between Code 0
and last Code 1023)
10
mV Given for the DAC in 12-bit configuration
Offset(4)
Offset error
(difference between
measured value at Code
(0x800) and the ideal value =
VREF+/2)
LSB
Given for the DAC in 10-bit at VREF+ =

3.6 V
12
LSB
Given for the DAC in 12-bit at VREF+ =

3.6 V
Gain error
0.5
Given for the DAC in 12-bit configuration
CLOAD 50 pF,
RLOAD 5 k
IDDA(4)
DNL(4)
Gain
error(4)
Parameter
DAC DC VDDA current

consumption in quiescent
mode(3)
Settling time (full scale: for a

10-bit input code transition
between the lowest and the
(4)
tSETTLING
highest input codes when
DAC_OUT reaches final
value 4LSB
THD(4)
Total Harmonic Distortion

Buffer ON
dB
CLOAD 50 pF,
RLOAD 5 k
Update
rate(2)
Max frequency for a correct

DAC_OUT change when
small variation in the input
code (from code i to i+1LSB)
MS/s
CLOAD 50 pF,
RLOAD 5 k
Wakeup time from off state

tWAKEUP(4) (Setting the ENx bit in the
DAC Control register)
6.5
10
CLOAD 50 pF, RLOAD 5 k

input code between lowest and highest
possible ones.
Power supply rejection ratio

PSRR+ (2) (to VDDA) (static DC
measurement)
67
40
dB
No RLOAD, CLOAD = 50 pF
1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.17.2:
3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic
consumption occurs.
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Figure 45. 12-bit buffered /non-buffered DAC
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1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.
5.3.26
Communications interfaces
I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev. 03 for:
Standard-mode (Sm): with a bit rate up to 100 kbit/s
Fast-mode (Fm): with a bit rate up to 400 kbit/s.
Fast-mode Plus (Fm+): with a bit rate up to 1Mbit/s.
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to RM0385 reference manual) and when the I2CCLK frequency is greater
than the minimum shown in the table below:
Table 74. Minimum I2CCLK frequency in all I2C modes
Symbol
Parameter
Condition
Standard-mode
Fast-mode
f(I2CCLK)
I2CCLK
frequency
Fast-mode Plus
Min
Unit
2
Analog Filtre ON
DNF=0
10
Analog Filtre OFF

DNF=1
Analog Filtre ON
DNF=0
22.5
Analog Filtre OFF

DNF=1
16
MHz
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not true open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDD is disabled, but is still present.
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STM32F756xx
The 20mA output drive requirement in Fast-mode Plus is not supported. This limits the
maximum load Cload supported in Fm+, which is given by these formulas:
Tr(SDA/SCL)=0.8473xRpxCload
Rp(min)= (VDD-VOL(max))/IOL(max)
Where Rp is the I2C lines pull-up. Refer to Section 5.3.17: I/O port characteristics for the
I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog
filter characteristics:
Table 75. I2C analog filter characteristics(1)
Symbol
Parameter
Min
Max
Unit
tAF
Maximum pulse width of spikes

that are suppressed by the analog
filter
50(2)
150(3)
ns

2. Spikes with widths below tAF(min) are filtered.
3. Spikes with widths above tAF(max) are not filtered
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SPI interface characteristics

Unless otherwise specified, the parameters given in Table 76 for the SPI interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 17, with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 11
Capacitive load C = 30 pF
Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 5.3.17: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).
Table 76. SPI dynamic characteristics(1)
Symbol
fSCK
1/tc(SCK)
Parameter
SPI clock frequency
Conditions
Min
Typ
Max
Master mode
SPI1,4,5,6
2.7VDD3.6
54(2)
Master mode
SPI1,4,5,6
1.71VDD3.6
27
Master transmitter mode

SPI1,4,5,6
1.71VDD3.6
54
Slave receiver mode

SPI1,4,5,6
1.71VDD3.6
54
Slave mode transmitter/full duplex

SPI1,4,5,6
2.7VDD3.6
50(3)
Slave mode transmitter/full duplex

SPI1,4,5,6
1.71VDD3.6
38(3)
Master & Slave mode

SPI2,3
1.71VDD3.6
27
tsu(NSS)
NSS setup time
Slave mode, SPI presc = 2
4*Tpclk
th(NSS)
NSS hold time
Slave mode, SPI presc = 2
2*Tpclk
tw(SCKH)
tw(SCKL)
SCK high and low time
Master mode
Tpclk-2
Tpclk
Tpclk+2
DocID027589 Rev 4
Unit
MHz
ns
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Table 76. SPI dynamic characteristics(1) (continued)

Symbol
tsu(MI)
Parameter
Data input setup time
tsu(SI)
th(MI)
Data input hold time
th(SI)
Conditions
Min
Typ
Max
Master mode
5.5
Slave mode
Master mode
Slave mode
ta(SO)
Data output access time
Slave mode
21
tdis(SO)
Data output disable time
Slave mode
12
Slave mode 2.7VDD3.6V
6.5
10
Slave mode 1.71VDD3.6V
6.5
13
Master mode
Slave mode
1.71VDD3.6V
5.5
Master mode
tv(SO)
Data output valid time
tv(MO)
th(SO)
Data output hold time
th(MO)
Unit
ns

2. Excepting SPI1 with SCK IO pin mapped on PA5. In this configuration, Maximum achievable frequency is 40MHz.
3. Maximum Frequency of Slave Transmitter is determined by sum of Tv(SO) and Tsu(MI) intervals which has to fit into SCK
level phase preceding the SCK sampling edge.This value can be achieved when it communicates with a Master having
Tsu(MI)=0 while signal Duty(SCK)=50%.
Figure 46. SPI timing diagram - slave mode and CPHA = 0

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WVX6,
026,
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WK6,
DLF
158/228
DocID027589 Rev 4
STM32F756xx
Figure 47. SPI timing diagram - slave mode and CPHA = 1
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Figure 48. SPI timing diagram - master mode

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I2S interface characteristics

Unless otherwise specified, the parameters given in Table 77 for the I2S interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD

DocID027589 Rev 4
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STM32F756xx
function characteristics (CK, SD, WS).
Table 77. I2S dynamic characteristics(1)
Symbol
Parameter
fMCK
I2S Main clock output
fCK
I2S clock frequency
DCK
Conditions
-
Min
256x8K
Max
256xFs
Master data: 32 bits
64xFs
Slave data: 32 bits
64xFs
30
70
I2S clock frequency duty cycle Slave receiver
tv(WS)
WS valid time
Master mode
th(WS)
WS hold time
Master mode
Slave mode
Slave mode
PCM short pulse mode(3)
Slave mode
Slave mode
PCM short pulse mode(3)
Master receiver
Slave receiver
Master receiver
Slave receiver
1.5
Slave transmitter (after enable edge)
16
Master transmitter (after enable edge)
3.5
Slave transmitter (after enable edge)
Master transmitter (after enable edge)
tsu(WS)
WS setup time
th(WS)
WS hold time
tsu(SD_MR)
tsu(SD_SR)
th(SD_MR)
th(SD_SR)
tv(SD_ST)
tv(SD_MT)
th(SD_ST)
th(SD_MT)
Unit
(2)
MHz
MHz
%
ns
ns

2. The maximum value of 256xFs is 45 MHz (APB1 maximum frequency).
3. Measurement done with respect to I2S_CK rising edge.
Note:
Refer to RM0385 reference manual I2S section for more details on the sampling frequency
(FS).
fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The values of these
parameters might be slightly impacted by the source clock precision. DCK depends mainly
on the value of ODD bit. The digital contribution leads to a minimum value of
(I2SDIV/(2*I2SDIV+ODD) and a maximum value of (I2SDIV+ODD)/(2*I2SDIV+ODD). FS
maximum value is supported for each mode/condition.
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Figure 49. I2S slave timing diagram (Philips protocol)(1)
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DLE
1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
Figure 50. I2S master timing diagram (Philips protocol)(1)
TF#+
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TC#+
#0/,
TW#+(
#0/,
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TH73
TW#+,
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TSU3$?-2
3$RECEIVE
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TH3$?-4
-3"RECEIVE
"ITNRECEIVE
,3"RECEIVE
AIB
1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
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SAI characteristics
Unless otherwise specified, the parameters given in Table 78 for SAI are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 17, with the following configuration:
Capacitive load C=30 pF
Measurement points are performed at CMOS levels: 0.5VDD
function characteristics (SCK,SD,WS).

Table 78. SAI characteristics(1)
Symbol
Parameter
Conditions
Min
Max
Unit
fMCKL
SAI Main clock output
256 x 8K
256xFs(2)
MHz
FSCK
SAI clock frequency
Master data: 32 bits
128xFs
Slave data: 32 bits
128xFs
DSCK
SAI clock frequency duty

cycle
Slave receiver
30
70
tv(FS)
FS valid time
Master mode
22
tsu(FS)
FS setup time
Slave mode
th(FS)
FS hold time
Master mode
Slave mode
Master receiver
Slave receiver
Master receiver
Slave receiver
Slave transmitter (after enable

edge)
15
Master transmitter (after enable

edge)
20
Master transmitter (after enable

edge)
tsu(SD_MR)
tsu(SD_SR)
th(SD_MR)
th(SD_SR)
tv(SD_ST)
th(SD_ST)
tv(SD_MT)
th(SD_MT)

2. 256xFs maximum corresponds to 45 MHz (APB2 xaximum frequency)
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MHz
%
ns
STM32F756xx
Figure 51. SAI master timing waveforms
F3#+
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TH&3
3!)?&3?8
OUTPUT
TV&3
TH3$?-4
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3!)?3$?8
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3LOTN
TSU3$?-2
3LOTN
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3!)?3$?8
RECEIVE
3LOTN
-36
Figure 52. SAI slave timing waveforms

F3#+
3!)?3#+?8
TW#+(?8
3!)?&3?8
INPUT
TW#+,?8
TH&3
TSU&3
TH3$?34
TV3$?34
3!)?3$?8
TRANSMIT
3LOTN
TSU3$?32
3!)?3$?8
RECEIVE
3LOTN
TH3$?32
3LOTN
-36
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USB OTG full speed (FS) characteristics

This interface is present in both the USB OTG HS and USB OTG FS controllers.
Table 79. USB OTG full speed startup time
Symbol
tSTARTUP(1)
Parameter
Max
Unit
USB OTG full speed transceiver startup time
Table 80. USB OTG full speed DC electrical characteristics

Symbol
Parameter
Conditions
USB OTG full speed

VDDUSB transceiver operating
voltage
Input
levels
Min.
(1)
Typ.
3.0(2)
Max.
(1)
Unit
3.6
VDI(3)
Differential input sensitivity
I(USB_FS_DP/DM,
USB_HS_DP/DM)
0.2
VCM(3)
Differential common mode

range
Includes VDI range
0.8
2.5
VSE(3)
Single ended receiver

threshold
1.3
2.0
VOL
Static output level low
RL of 1.5 k to 3.6 V(4)
0.3
2.8
3.6
17
21
24
0.65
1.1
2.0
Output
levels
RPD
RPU
VOH
Static output level high
RL of 15 k to
PA11, PA12, PB14, PB15

(USB_FS_DP/DM,
USB_HS_DP/DM)
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
VSS(4)
VIN = VDD
k
PA12, PB15 (USB_FS_DP,

USB_HS_DP)
VIN = VSS
1.5
1.8
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
VIN = VSS
0.25
0.37 0.55
2.1
1. All the voltages are measured from the local ground potential.
2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed
electrical characteristics which are degraded in the 2.7-to-3.0 V VDDUSB voltage range.
4. RL is the load connected on the USB OTG full speed drivers.
Note:
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When VBUS sensing feature is enabled, PA9 and PB13 should be left at their default state
(floating input), not as alternate function. A typical 200 A current consumption of the
sensing block (current to voltage conversion to determine the different sessions) can be
observed on PA9 and PB13 when the feature is enabled.
DocID027589 Rev 4
STM32F756xx
Figure 53. USB OTG full speed timings: definition of data signal rise and fall time
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Table 81. USB OTG full speed electrical characteristics(1)

Driver characteristics
Symbol
tr
tf
trfm
Parameter
Rise time(2)
Fall
time(2)
Conditions
Min
Max
Unit
CL = 50 pF
20
ns
CL = 50 pF
20
ns
tr/tf
90
110
1.3
2.0
Driving high or
low
28
44
Rise/ fall time matching
VCRS
Output signal crossover voltage
ZDRV
Output driver impedance(3)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
USB high speed (HS) characteristics

Unless otherwise specified, the parameters given in Table 84 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 83
and VDD supply voltage conditions summarized in Table 82, with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 11, unless otherwise specified
Capacitive load C = 20 pF, unless otherwise specified
Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section 5.3.17: I/O port characteristics for more details on the input/output
characteristics.
Table 82. USB HS DC electrical characteristics
Symbol
Input level
Parameter
VDD
USB OTG HS operating voltage
Min.(1)
Max.(1)
Unit
1.7
3.6
1. All the voltages are measured from the local ground potential.
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Table 83. USB HS clock timing parameters(1)
Symbol
Parameter
Min
Typ
Max
Unit
fHCLK value to guarantee proper operation of

USB HS interface
30
MHz
FSTART_8BIT
Frequency (first transition)
54
60
66
MHz
FSTEADY
Frequency (steady state) 500 ppm
59.97
60
60.03
MHz
DSTART_8BIT
Duty cycle (first transition)
40
50
60
DSTEADY
Duty cycle (steady state) 500 ppm
49.975
50
50.025
tSTEADY
Time to reach the steady state frequency and

duty cycle after the first transition
1.4
ms
Peripheral
5.6
Host
tSTART_DEV
tSTART_HOST
Clock startup time after the

de-assertion of SuspendM
8-bit 10%
8-bit 10%
PHY preparation time after the first transition

of the input clock
tPREP
ms
s
Figure 54. ULPI timing diagram

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Table 84. Dynamic characteristics: USB ULPI(1)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
tSC
Control in (ULPI_DIR, ULPI_NXT) setup time
tHC
Control in (ULPI_DIR, ULPI_NXT) hold time
tSD
Data in setup time
1.5
tHD
Data in hold time
0.5
2.7 V < VDD < 3.6 V,

CL = 20 pF and
OSPEEDRy[1:0] = 11
5.5
5.5
11.5
tDC/tDD
Data/control output delay
1.7 V < VDD < 3.6 V,

CL = 15 pF and
OSPEEDRy[1:0] = 11
Unit
ns
Ethernet characteristics
Unless otherwise specified, the parameters given in Table 85, Table 86 and Table 87 for
SMI, RMII and MII are derived from tests performed under the ambient temperature, fHCLK
frequency summarized in Table 17 and VDD supply voltage conditions summarized in
Table 85, with the following configuration:
Measurement points are done at CMOS levels: 0.5VDD.
characteristics.
Table 85 gives the list of Ethernet MAC signals for the SMI (station management interface)
and Figure 55 shows the corresponding timing diagram.
Figure 55. Ethernet SMI timing diagram
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Table 85. Dynamics characteristics: Ethernet MAC signals for SMI(1)

Symbol
Min
Typ
Max
MDC cycle time(2.38 MHz)
400
400
403
Td(MDIO)
Write data valid time
10
10.5
12.5
tsu(MDIO)
Read data setup time
12.5
th(MDIO)
Read data hold time
tMDC
Parameter
Unit
ns
Table 86 gives the list of Ethernet MAC signals for the RMII and Figure 56 shows the
corresponding timing diagram.
Figure 56. Ethernet RMII timing diagram
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9
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DL
Table 86. Dynamics characteristics: Ethernet MAC signals for RMII(1)

Symbol
Parameter
Typ
Max
tsu(RXD)
Receive data setup time
tih(RXD)
Receive data hold time
1.5
tsu(CRS)
Carrier sense setup time
tih(CRS)
Carrier sense hold time
td(TXEN)
Transmit enable valid delay time
10.5
td(TXD)
Transmit data valid delay time
12
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Min
DocID027589 Rev 4
Unit
ns
STM32F756xx
Table 87 gives the list of Ethernet MAC signals for MII and Figure 56 shows the
corresponding timing diagram.
Figure 57. Ethernet MII timing diagram
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Table 87. Dynamics characteristics: Ethernet MAC signals for MII(1)

Symbol
Parameter
Min
Typ
Max
tsu(RXD)
Receive data setup time
tih(RXD)
Receive data hold time
1.5
tsu(DV)
Data valid setup time
tih(DV)
Data valid hold time
1.5
tsu(ER)
Error setup time
1.5
tih(ER)
Error hold time
0.5
td(TXEN)
Transmit enable valid delay time
6.5
13.5
td(TXD)
Transmit data valid delay time
6.5
13.5
Unit
ns
CAN (controller area network) interface

function characteristics (CANx_TX and CANx_RX).
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FMC characteristics
Unless otherwise specified, the parameters given in Table 88 to Table 101 for the FMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 17, with the following configuration:
characteristics.
Asynchronous waveforms and timings

Figure 58 through Figure 61 represent asynchronous waveforms and Table 88 through
Table 95 provide the corresponding timings. The results shown in these tables are obtained
with the following FMC configuration:
AddressSetupTime = 0x1
AddressHoldTime = 0x1
DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5)
BusTurnAroundDuration = 0x0
Capcitive load CL = 30 pF
In all timing tables, the THCLK is the HCLK clock period
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Figure 58. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms
TW.%
&-#?.%
TV./%?.%
T W./%
T H.%?./%
&-#?./%
&-#?.7%
TV!?.%
&-#?!;=
T H!?./%
!DDRESS
TV",?.%
T H",?./%
&-#?.",;=
T H$ATA?.%
T SU$ATA?./%
TH$ATA?./%
T SU$ATA?.%
$ATA
&-#?$;=
T V.!$6?.%
TW.!$6
&-#?.!$6

&-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
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Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)

Symbol
Min
Max
2THCLK 0.5
2 THCLK+1.5
2THCLK 1
2THCLK+ 1
FMC_NOE high to FMC_NE high hold time
FMC_NEx low to FMC_A valid
0.5
th(A_NOE)
Address hold time after FMC_NOE high
tv(BL_NE)
FMC_NEx low to FMC_BL valid
0.5
th(BL_NOE)
FMC_BL hold time after FMC_NOE high
tsu(Data_NE)
Data to FMC_NEx high setup time
THCLK - 2
tsu(Data_NOE)
Data to FMC_NOEx high setup time
THCLK -2
th(Data_NOE)
Data hold time after FMC_NOE high
th(Data_NE)
Data hold time after FMC_NEx high
tv(NADV_NE)
FMC_NEx low to FMC_NADV low
FMC_NADV low time
THCLK +1
tw(NE)
tv(NOE_NE)
tw(NOE)
th(NE_NOE)
tv(A_NE)
tw(NADV)
Parameter
FMC_NE low time
FMC_NEx low to FMC_NOE low
FMC_NOE low time
Unit
ns
1. CL = 30 pF.
Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR read - NWAIT timings(1)

Symbol
Min
Max
FMC_NE low time
7THCLK 1
7THCLK
FMC_NWE low time
5THCLK 1
5THCLK +1
FMC_NWAIT low time
THCLK 0.5
tsu(NWAIT_NE)
FMC_NWAIT valid before FMC_NEx high
5THCLK +1.5
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT invalid
4THCLK+1
tw(NE)
tw(NOE)
tw(NWAIT)
Parameter
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Unit
ns
STM32F756xx
Figure 59. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms
TW.%
&-#?.%X
&-#?./%
TV.7%?.%
TW.7%
T H.%?.7%
&-#?.7%
TV!?.%
&-#?!;=
TH!?.7%
!DDRESS
TV",?.%
&-#?.",;=
TH",?.7%
.",
TV$ATA?.%
TH$ATA?.7%
$ATA
&-#?$;=
T V.!$6?.%
&-#?.!$6
TW.!$6
&-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
Table 90. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)

Symbol
tw(NE)
tv(NWE_NE)
tw(NWE)
th(NE_NWE)
tv(A_NE)
Parameter
Min
Max
FMC_NE low time
3THCLK0.5
3THCLK+1.5
FMC_NEx low to FMC_NWE low
THCLK0.5
THCLK+ 1
FMC_NWE low time
THCLK0.5
THCLK+ 1
FMC_NWE high to FMC_NE high hold time
THCLK 0.5
THCLK0.5
THCLK0.5
th(A_NWE)
Address hold time after FMC_NWE high
tv(BL_NE)
th(BL_NWE)
FMC_BL hold time after FMC_NWE high
tv(Data_NE)
Data to FMC_NEx low to Data valid
THCLK+ 3
th(Data_NWE)
Data hold time after FMC_NWE high
THCLK+0.5
tv(NADV_NE)
FMC_NADV low time
THCLK+ 0.5
tw(NADV)
Unit
ns
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Table 91. Asynchronous non-multiplexed SRAM/PSRAM/NOR write - NWAIT

timings(1)
Symbol
Parameter
tw(NE)
tw(NWE)
Min
Max
FMC_NE low time
8THCLK0.5
8THCLK+1.5
FMC_NWE low time
6THCLK0.5
6THCLK+1
tsu(NWAIT_NE)
6THCLK1
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT

invalid
4THCLK+2
Unit
ns
Figure 60. Asynchronous multiplexed PSRAM/NOR read waveforms

TW.%
&-#? .%
TV./%?.%
T H.%?./%
&-#?./%
T W./%
&-#?.7%
TH!?./%
TV!?.%
&-#? !;=
!DDRESS
TV",?.%
TH",?./%
&-#? .",;=
.",
TH$ATA?.%
TSU$ATA?.%
T V!?.%
&-#? !$;=
TSU$ATA?./%
TH$ATA?./%
$ATA
!DDRESS
TH!$?.!$6
T V.!$6?.%
TW.!$6
&-#?.!$6
&-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
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Table 92. Asynchronous multiplexed PSRAM/NOR read timings(1)
Symbol
tw(NE)
tv(NOE_NE)
ttw(NOE)
th(NE_NOE)
tv(A_NE)
tv(NADV_NE)
tw(NADV)
Parameter
Min
Max
3THCLK0.5
3THCLK+1.5
FMC_NEx low to FMC_NOE low
2THCLK1
2THCLK+0.5
FMC_NOE low time
THCLK0.5
THCLK+0.5
FMC_NOE high to FMC_NE high hold time
0.5
0.5
THCLK0.5
THCLK+1.5
FMC_NE low time
FMC_NADV low time
th(AD_NADV)
FMC_AD(address) valid hold time after

FMC_NADV high)
th(A_NOE)
Address hold time after FMC_NOE high
THCLK0.5
th(BL_NOE)
FMC_BL time after FMC_NOE high
0.5
tv(BL_NE)
tsu(Data_NE)
Data to FMC_NEx high setup time
THCLK2
tsu(Data_NOE)
Data to FMC_NOE high setup time
THCLK2
th(Data_NE)
Data hold time after FMC_NEx high
th(Data_NOE)
Data hold time after FMC_NOE high
Unit
ns
Table 93. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)

Symbol
tw(NE)
tw(NOE)
Parameter
Min
Max
FMC_NE low time
8THCLK1
8THCLK+2
FMC_NWE low time
5THCLK1
5THCLK +1
5THCLK +1.5
4THCLK+1
tsu(NWAIT_NE)
th(NE_NWAIT)

invalid
Unit
ns
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Figure 61. Asynchronous multiplexed PSRAM/NOR write waveforms

TW.%
&-#? .%X
&-#?./%
TV.7%?.%
TW.7%
T H.%?.7%
&-#?.7%
TH!?.7%
TV!?.%
&-#? !;=
!DDRESS
TV",?.%
TH",?.7%
&-#? .",;=
.",
T V!?.%
&-#? !$;=
T V$ATA?.!$6
!DDRESS
TH$ATA?.7%
$ATA
TH!$?.!$6
T V.!$6?.%
TW.!$6
&-#?.!$6
&-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
Table 94. Asynchronous multiplexed PSRAM/NOR write timings(1)

Symbol
tw(NE)
tv(NWE_NE)
tw(NWE)
th(NE_NWE)
tv(A_NE)
tv(NADV_NE)
tw(NADV)
th(AD_NADV)
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Parameter
Min
Max
4THCLK0.5
4THCLK+1.5
THCLK1
THCLK+0.5
2THCLK0.5
2THCLK+0.5
THCLK
0.5
THCLK0.5
THCLK+ 1.5
THCLK2
FMC_NE low time

FMC_NEx low to FMC_NWE low
FMC_NWE low time
FMC_NWE high to FMC_NE high hold time
FMC_NADV low time

FMC_AD(adress) valid hold time after
FMC_NADV high)
th(A_NWE)
Address hold time after FMC_NWE high
THCLK
th(BL_NWE)
FMC_BL hold time after FMC_NWE high
THCLK2
tv(BL_NE)
tv(Data_NADV)
FMC_NADV high to Data valid
THCLK +2
th(Data_NWE)
Data hold time after FMC_NWE high
THCLK +0.5
DocID027589 Rev 4
Unit
ns
STM32F756xx
Table 95. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)

Symbol
tw(NE)
tw(NWE)
Parameter
FMC_NE low time
FMC_NWE low time
Min
Max
9THCLK
9THCLK+1.5
7THCLK0.5
7THCLK+0.5
tsu(NWAIT_NE)
6THCLK+2
th(NE_NWAIT)

invalid
4THCLK1
Unit
ns
Synchronous waveforms and timings

Figure 62 through Figure 65 represent synchronous waveforms and Table 96 through
Table 99 provide the corresponding timings. The results shown in these tables are obtained
BurstAccessMode = FMC_BurstAccessMode_Enable;
MemoryType = FMC_MemoryType_CRAM;
WriteBurst = FMC_WriteBurst_Enable;
CLKDivision = 1;
DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
CL = 30 pF on data and address lines. CL = 10 pF on FMC_CLK unless otherwise

specified.
In all timing tables, the THCLK is the HCLK clock period.
For 2.7 VVDD3.6 V, maximum FMC_CLK = 108 MHz at CL=20 pF or 90 MHz at

CL=30 pF (on FMC_CLK).
For 1.71 VVDD<2.7 V, maximum FMC_CLK = 70 MHz at CL=10 pF (on FMC_CLK).
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Figure 62. Synchronous multiplexed NOR/PSRAM read timings

"53452.
TW#,+
TW#,+
&-#?#,+
$ATALATENCY
TD#,+, .%X,
&-#?.%X
T D#,+, .!$6,
TD#,+( .%X(
TD#,+, .!$6(
&-#?.!$6
TD#,+, !6
TD#,+( !)6
&-#?!;=
TD#,+, ./%,
TD#,+( ./%(
&-#?./%
T D#,+, !$6
&-#?!$;=
TD#,+, !$)6
TSU!$6 #,+(
!$;=
TH#,+( !$6
TSU!$6 #,+(
$
TSU.7!)46 #,+(
&-#?.7!)4
7!)4#&'B
7!)40/,B
&-#?.7!)4
7!)4#&'B
7!)40/,B
TSU.7!)46 #,+(
TSU.7!)46 #,+(
TH#,+( !$6
$
TH#,+( .7!)46
TH#,+( .7!)46
TH#,+( .7!)46
-36
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Table 96. Synchronous multiplexed NOR/PSRAM read timings(1)
Symbol
tw(CLK)
Parameter
FMC_CLK period
Min
Max
2THCLK0.5
THCLK+0.5
td(CLKL-NExL)
FMC_CLK low to FMC_NEx low (x=0..2)
td(CLKH_NExH)
FMC_CLK high to FMC_NEx high (x= 02)
td(CLKL-NADVL)
FMC_CLK low to FMC_NADV low
1.5
td(CLKL-NADVH)
FMC_CLK low to FMC_NADV high
td(CLKL-AV)
FMC_CLK low to FMC_Ax valid (x=1625)
td(CLKH-AIV)
FMC_CLK high to FMC_Ax invalid (x=1625)
THCLK
THCLK0.5
td(CLKL-NOEL)
FMC_CLK low to FMC_NOE low
td(CLKH-NOEH)
FMC_CLK high to FMC_NOE high
td(CLKL-ADV)
FMC_CLK low to FMC_AD[15:0] valid
td(CLKL-ADIV)
FMC_CLK low to FMC_AD[15:0] invalid
tsu(ADV-CLKH)
FMC_A/D[15:0] valid data before FMC_CLK

high
1.5
th(CLKH-ADV)
FMC_A/D[15:0] valid data after FMC_CLK high
tsu(NWAIT-CLKH)
FMC_NWAIT valid before FMC_CLK high
th(CLKH-NWAIT)
FMC_NWAIT valid after FMC_CLK high
3.5
Unit
ns
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Figure 63. Synchronous multiplexed PSRAM write timings
"53452.
TW#,+
TW#,+
&-#?#,+
$ATALATENCY
TD#,+, .%X,
TD#,+( .%X(
&-#?.%X
TD#,+, .!$6,
TD#,+, .!$6(
&-#?.!$6
TD#,+( !)6
TD#,+, !6
&-#?!;=
TD#,+( .7%(
TD#,+, .7%,
&-#?.7%
TD#,+, !$)6
TD#,+, !$6
&-#?!$;=
TD#,+, $ATA
TD#,+, $ATA
!$;=
$
$
&-#?.7!)4
7!)4#&'B
7!)40/,B
TSU.7!)46 #,+(
TH#,+( .7!)46
TD#,+( .",(
&-#?.",
-36
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Table 97. Synchronous multiplexed PSRAM write timings(1)
Symbol
Min
Max
2THCLK0.5
1.5
THCLK+0.5
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low
1.5
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high
THCLK
1.5
THCLK0.5
tw(CLK)
Parameter
FMC_CLK period
td(CLKL-NExL)
td(CLKH-NExH)
td(CLKL-AV)
td(CLKH-AIV)
td(CLKL-NWEL)
FMC_CLK low to FMC_NWE low
t(CLKH-NWEH)
FMC_CLK high to FMC_NWE high
td(CLKL-ADV)
FMC_CLK low to FMC_AD[15:0] valid
td(CLKL-ADIV)
FMC_CLK low to FMC_AD[15:0] invalid
td(CLKL-DATA)
FMC_A/D[15:0] valid data after FMC_CLK low
3.5
td(CLKL-NBLL)
FMC_CLK low to FMC_NBL low
td(CLKH-NBLH)
FMC_CLK high to FMC_NBL high
THCLK+0.5
3.5
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high
Unit
ns
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Figure 64. Synchronous non-multiplexed NOR/PSRAM read timings

TW#,+
TW#,+
&-#?#,+
TD#,+, .%X,
TD#,+( .%X(
$ATALATENCY
&-#?.%X
TD#,+, .!$6,
TD#,+, .!$6(
&-#?.!$6
TD#,+( !)6
TD#,+, !6
&-#?!;=
TD#,+, ./%,
TD#,+( ./%(
&-#?./%
TSU$6 #,+(
TH#,+( $6
TSU$6 #,+(
&-#?$;=
TH#,+( $6
$
TSU.7!)46 #,+(
&-#?.7!)4
7!)4#&'B
7!)40/,B
$
TH#,+( .7!)46
TSU.7!)46 #,+(
&-#?.7!)4
7!)4#&'B
7!)40/,B
TSU.7!)46 #,+(
T H#,+( .7!)46
TH#,+( .7!)46
-36
Table 98. Synchronous non-multiplexed NOR/PSRAM read timings(1)

Symbol
Min
Max
2THCLK1
2.5
THCLK+0.5
2.5
THCLK
THCLK+0.5
1.5
tw(CLK)
t(CLKL-NExL)
td(CLKH-NExH)
Parameter
FMC_CLK period
td(CLKL-AV)
td(CLKH-AIV)
td(CLKL-NOEL)
FMC_CLK low to FMC_NOE low
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high

tsu(DV-CLKH)
FMC_D[15:0] valid data before FMC_CLK high
th(CLKH-DV)
FMC_D[15:0] valid data after FMC_CLK high
FMC_NWAIT valid before FMC_CLK high
3.5
t(NWAIT-CLKH)
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Unit
ns
STM32F756xx
Figure 65. Synchronous non-multiplexed PSRAM write timings

TW#,+
TW#,+
&-#?#,+
TD#,+, .%X,
TD#,+( .%X(
$ATALATENCY
&-#?.%X
TD#,+, .!$6,
TD#,+, .!$6(
&-#?.!$6
TD#,+( !)6
TD#,+, !6
&-#?!;=
TD#,+, .7%,
TD#,+( .7%(
&-#?.7%
TD#,+, $ATA
TD#,+, $ATA
$
&-#?$;=
$
&-#?.7!)4
7!)4#&'B7!)40/,B
TSU.7!)46 #,+(
TD#,+( .",(
TH#,+( .7!)46
&-#?.",
-36
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Table 99. Synchronous non-multiplexed PSRAM write timings(1)

Symbol
Min
Max
2THCLK1
2.5
THCLK+0.5
1.5
t(CLK)
Parameter
FMC_CLK period
td(CLKL-NExL)
t(CLKH-NExH)
td(CLKL-AV)
2.5
td(CLKH-AIV)
FMC_CLK low to FMC_NWE low
1.5
THCLK+1
1.5
THCLK+0.5
3.5
td(CLKL-NWEL)
td(CLKH-NWEH) FMC_CLK high to FMC_NWE high

td(CLKL-Data)
FMC_D[15:0] valid data after FMC_CLK low
td(CLKL-NBLL)
FMC_CLK low to FMC_NBL low
td(CLKH-NBLH)
FMC_CLK high to FMC_NBL high
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high

Unit
ns
NAND controller waveforms and timings

Figure 66 through Figure 69 represent synchronous waveforms, and Table 100 and
Table 101 provide the corresponding timings. The results shown in this table are obtained
COM.FMC_SetupTime = 0x01;
COM.FMC_WaitSetupTime = 0x03;
COM.FMC_HoldSetupTime = 0x02;
COM.FMC_HiZSetupTime = 0x01;
ATT.FMC_SetupTime = 0x01;
ATT.FMC_WaitSetupTime = 0x03;
ATT.FMC_HoldSetupTime = 0x02;
ATT.FMC_HiZSetupTime = 0x01;
Bank = FMC_Bank_NAND;
MemoryDataWidth = FMC_MemoryDataWidth_16b;
ECC = FMC_ECC_Enable;
ECCPageSize = FMC_ECCPageSize_512Bytes;
TCLRSetupTime = 0;
TARSetupTime = 0.
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Figure 66. NAND controller waveforms for read access
&-#?.#%X
!,%&-#?!
#,%&-#?!
&-#?.7%
TD!,% ./%
TH./% !,%
&-#?./%.2%
TSU$ ./%
TH./% $
&-#?$;=
-36
Figure 67. NAND controller waveforms for write access

&-#?.#%X
!,%&-#?!
#,%&-#?!
TH.7% !,%
TD!,% .7%
&-#?.7%
&-#?./%.2%
TH.7% $
TV.7% $
&-#?$;=
-36
Figure 68. NAND controller waveforms for common memory read access
&-#?.#%X
!,%&-#?!
#,%&-#?!
TH./% !,%
TD!,% ./%
&-#?.7%
TW./%
&-#?./%
TSU$ ./%
TH./% $
&-#?$;=
-36
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Figure 69. NAND controller waveforms for common memory write access
&-#?.#%X
!,%&-#?!
#,%&-#?!
TD!,% ./%
TW.7%
TH./% !,%
&-#?.7%
&-#?. /%
TD$ .7%
TV.7% $
TH.7% $
&-#?$;=
-36
Table 100. Switching characteristics for NAND Flash read cycles(1)

Symbol
tw(N0E)
Parameter
FMC_NOE low width
Min
Max
4THCLK0.5
4THCLK
tsu(D-NOE)
FMC_D[15-0] valid data before FMC_NOE high
13
th(NOE-D)
FMC_D[15-0] valid data after FMC_NOE high
td(ALE-NOE)
FMC_ALE valid before FMC_NOE low
3THCLK0.5
th(NOE-ALE)
FMC_NWE high to FMC_ALE invalid
3THCLK2
Unit
ns
Table 101. Switching characteristics for NAND Flash write cycles(1)

Symbol
tw(NWE)
Parameter
FMC_NWE low width
Max
4THCLK0.5
4THCLK
tv(NWE-D)
FMC_NWE low to FMC_D[15-0] valid
th(NWE-D)
FMC_NWE high to FMC_D[15-0] invalid
3THCLK1
td(D-NWE)
FMC_D[15-0] valid before FMC_NWE high
5THCLK3
3THCLK0.5
3THCLK2
td(ALE-NWE)
FMC_ALE valid before FMC_NWE low
th(NWE-ALE)
FMC_NWE high to FMC_ALE invalid
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Min
DocID027589 Rev 4
Unit
ns
STM32F756xx
SDRAM waveforms and timings
CL = 30 pF on data and address lines. CL = 10 pF on FMC_SDCLK unless otherwise

specified.
For 3.0 VVDD3.6 V, maximum FMC_SDCLK= 100 MHz at CL=20 pF (on

FMC_SDCLK).
For 2.7 VVDD3.6 V, maximum FMC_SDCLK = 90 MHz at CL=30 pF (on

FMC_SDCLK).
For 1.71 VVDD<1.9 V, maximum FMC_SDCLK = 70 MHz at CL=10 pF (on

FMC_SDCLK).
Figure 70. SDRAM read access waveforms (CL = 1)
&-#?3$#,+
TD3$#,+,?!DD#
TH3$#,+,?!DD2
TD3$#,+,?!DD2
&-#?!>@
2OWN
#OL
#OL
#OLI
#OLN
TH3$#,+,?!DD#
TH3$#,+,?3.$%
TD3$#,+,?3.$%
&-#?3$.%;=
TD3$#,+,?.2!3
TH3$#,+,?.2!3
&-#?3$.2!3
TH3$#,+,?.#!3
TD3$#,+,?.#!3
&-#?3$.#!3
&-#?3$.7%
TSU3$#,+(?$ATA
&-#?$;=
TH3$#,+(?$ATA
$ATA
$ATA
$ATAI
$ATAN
-36
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Table 102. SDRAM read timings(1)
Symbol
Parameter
Min
Max
tw(SDCLK)
FMC_SDCLK period
2THCLK0.5
2THCLK+0.5
tsu(SDCLKH _Data)
3.5
th(SDCLKH_Data)
1.5
td(SDCLKL_Add)
Address valid time
td(SDCLKL- SDNE)
Chip select valid time
0.5
th(SDCLKL_SDNE)
Chip select hold time
td(SDCLKL_SDNRAS)
SDNRAS valid time
0.5
th(SDCLKL_SDNRAS)
SDNRAS hold time
td(SDCLKL_SDNCAS)
SDNCAS valid time
0.5
th(SDCLKL_SDNCAS)
SDNCAS hold time
Unit
ns
Table 103. LPSDR SDRAM read timings(1)

Symbol
Parameter
Min
Max
tW(SDCLK)
FMC_SDCLK period
2THCLK0.5
2THCLK+0.5
tsu(SDCLKH_Data)
th(SDCLKH_Data)
1.5
td(SDCLKL_Add)
Address valid time
3.5
td(SDCLKL_SDNE)
0.5
th(SDCLKL_SDNE)
td(SDCLKL_SDNRAS
SDNRAS valid time
0.5
th(SDCLKL_SDNRAS)
SDNRAS hold time
td(SDCLKL_SDNCAS)
SDNCAS valid time
0.5
th(SDCLKL_SDNCAS)
SDNCAS hold time
188/228
DocID027589 Rev 4
Unit
ns
STM32F756xx
Figure 71. SDRAM write access waveforms
&-#?3$#,+
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#OL
#OL
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TH3$#,+,?!DD#
TH3$#,+,?3.$%
TD3$#,+,?3.$%
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TH3$#,+,?.2!3
TD3$#,+,?.2!3
&-#?3$.2!3
TD3$#,+,?.#!3
TH3$#,+,?.#!3
TD3$#,+,?.7%
TH3$#,+,?.7%
&-#?3$.#!3
&-#?3$.7%
TD3$#,+,?$ATA
$ATA
&-#?$;=
$ATA
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TD3$#,+,?.",
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-36
Table 104. SDRAM write timings(1)

Symbol
Parameter
Min
Max
tw(SDCLK)
FMC_SDCLK period
2THCLK0.5
2THCLK+0.5
td(SDCLKL _Data)
th(SDCLKL _Data)
0.5
td(SDCLKL_Add)
Address valid time
td(SDCLKL_SDNWE)
SDNWE valid time
0.5
th(SDCLKL_SDNWE)
SDNWE hold time
td(SDCLKL_ SDNE)
0.5
th(SDCLKL-_SDNE)
td(SDCLKL_SDNRAS)
SDNRAS valid time
0.5
th(SDCLKL_SDNRAS)
SDNRAS hold time
td(SDCLKL_SDNCAS)
SDNCAS valid time
0.5
td(SDCLKL_SDNCAS)
SDNCAS hold time
Unit
ns
DocID027589 Rev 4
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196
STM32F756xx
Table 105. LPSDR SDRAM write timings(1)
Symbol
Parameter
Min
Max
Unit
tw(SDCLK)
FMC_SDCLK period
2THCLK0.5
2THCLK+0.5
td(SDCLKL _Data)
th(SDCLKL _Data)
td(SDCLKL_Add)
Address valid time
3.5
td(SDCLKL-SDNWE)
SDNWE valid time
0.5
th(SDCLKL-SDNWE)
SDNWE hold time
td(SDCLKL- SDNE)
0.5
th(SDCLKL- SDNE)
td(SDCLKL-SDNRAS)
SDNRAS valid time
0.5
th(SDCLKL-SDNRAS)
SDNRAS hold time
td(SDCLKL-SDNCAS)
SDNCAS valid time
0.5
td(SDCLKL-SDNCAS)
SDNCAS hold time
ns
5.3.28
Quad-SPI interface characteristics

Unless otherwise specified, the parameters given in Table 106 and Table 107 for Quad-SPI
are derived from tests performed under the ambient temperature, fAHB frequency and VDD
supply voltage conditions summarized in Table 17: General operating conditions, with the
following configuration:
Measurement points are done at CMOS levels: 0.5 VDD

function characteristics.
Table 106. Quad-SPI characteristics in SDR mode(1)
Symbol
Fck1/t(CK)
190/228
Parameter
Quad-SPI clock
frequency
Conditions
Min
Typ
Max
2.7 VVDD<3.6 V
CL=20 pF
108
1.71 V<VDD<3.6 V
CL=15 pF
DocID027589 Rev 4
Unit
MHz
-
100
STM32F756xx
Table 106. Quad-SPI characteristics (continued)in SDR mode(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
tw(CKH)
tw(CKL)
Quad-SPI clock high and

low time
t(CK)/2 -1
t(CK)/2
t(CK)/2
t(CK)/2+1
ts(IN)
th(IN)
tv(OUT)
2.7 V<VDD<3.6 V
1.5
1.71 V<VDD<3.6 V
1.5
th(OUT)
Unit
ns
Table 107. Quad-SPI characteristics in DDR mode(1)

Symbol
Parameter
Fck1/t(CK) Quad-SPI clock frequency
tw(CKH)
tw(CKL)
Quad-SPI clock high and

low time
ts(IN),
tsf(IN)
thr(IN),
thf(IN)
tvr(OUT),
tvf(OUT)
thr(OUT),
thf(OUT)
Conditions
Min
Typ
Max
2.7 V<VDD<3.6 V
CL=20 pF
80
1.8 V<VDD<3.6 V
CL=15 pF
80
1.71 V<VDD<3.6 V
CL=10 pF
80
t(CK)/2
-1
t(CK)/2
t(CK)/2
t(CK)/2+
1
2.7 V<VDD<3.6 V
1.5
1.71 V<VDD<2 V
0.75
2.7 V<VDD<3.6 V
3.5
1.71 V<VDD<2 V
4.5
2.7 V<VDD<3.6 V
10.5
1.71 V<VDD<3.6 V
DHHC=0
14.5
DHHC=1
Pres=1, 2...
Thclk/2
+1.75
Thclk/2
+2.25
DHHC=0
7.5
DHHC=1
Pres=1, 2...
Thclk/2
+1.5
Unit
MHz
ns
DocID027589 Rev 4
191/228
196
STM32F756xx
Figure 72. Quad-SPI timing diagram - SDR mode
WU&.
&ORFN
W&.
WZ&.+
WY287
WZ&./
WI&.
WK287
'DWDRXWSXW
'
'
WV,1
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WK,1
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'
06Y9
Figure 73. Quad-SPI timing diagram - DDR mode

WU&.
&ORFN
W&.
WYI287
'DWDRXWSXW
WZ&.+
WKU287
'
WYU287
'
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WZ&./
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5.3.29
Camera interface (DCMI) timing specifications

Unless otherwise specified, the parameters given in Table 108 for DCMI are derived
from tests performed under the ambient temperature, fHCLK frequency and VDD supply
voltage summarized in Table 17, with the following configuration:
DCMI_PIXCLK polarity: falling
DCMI_VSYNC and DCMI_HSYNC polarity: high
Data formats: 14 bits

Table 108. DCMI characteristics(1)
Symbol
Min
Max
0.4
54
MHz
Pixel clock input duty cycle
30
70
tsu(DATA)
3.5
th(DATA)
Parameter
Frequency ratio DCMI_PIXCLK/fHCLK
DCMI_PIXCLK Pixel clock input

DPixel
tsu(HSYNC)
tsu(VSYNC)
DCMI_HSYNC/DCMI_VSYNC input setup time
2.5
th(HSYNC)
th(VSYNC)
DCMI_HSYNC/DCMI_VSYNC input hold time
192/228
DocID027589 Rev 4
Unit
ns
STM32F756xx
Figure 74. DCMI timing diagram
'&0,B3,;&/.
'&0,B3,;&/.
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WVX+6<1&
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069
5.3.30
LCD-TFT controller (LTDC) characteristics

Unless otherwise specified, the parameters given in Table 109 for LCD-TFT are derived
from tests performed under the ambient temperature, fHCLK frequency and VDD supply
voltage summarized in Table 17, with the following configuration:
LCD_CLK polarity: high
LCD_DE polarity : low
LCD_VSYNC and LCD_HSYNC polarity: high
Pixel formats: 24 bits

Table 109. LTDC characteristics (1)
Symbol
Parameter
Min
Max
Unit
fCLK
LTDC clock output frequency
45
MHz
DCLK
LTDC clock output duty cycle
45
55
tw(CLKH)
tw(CLKL)
Clock High time, low time
tv(DATA)
th(DATA)
HSYNC/VSYNC/DE output valid

time
HSYNC/VSYNC/DE output hold

time
0.5
tv(HSYNC)
tv(VSYNC)
tw(CLK)/2 0.5 tw(CLK)/2+0.5
ns
tv(DE)
th(HSYNC)
th(VSYNC)
th(DE)
DocID027589 Rev 4
193/228
196
STM32F756xx
Figure 75. LCD-TFT horizontal timing diagram
W&/.
/&'B&/.
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WY+6<1&
WY+6<1&
/&'B+6<1&
WK'(
WY'(
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Figure 76. LCD-TFT vertical timing diagram

W&/.
/&'B&/.
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069
194/228
DocID027589 Rev 4
STM32F756xx
5.3.31
SD/SDIO MMC card host interface (SDMMC) characteristics

Unless otherwise specified, the parameters given in Table 110 for the SDIO/MMC interface
are derived from tests performed under the ambient temperature, fPCLK2 frequency and VDD
characteristics.
Figure 77. SDIO high-speed mode
TF
TR
T#
T7#+(
T7#+,
#+
T/6
T/(
$#-$
OUTPUT
T)35
T)(
$#-$
INPUT
AI
Figure 78. SD default mode
#+
T/6$
T/($
$#-$
OUTPUT
AI
DocID027589 Rev 4
195/228
196
STM32F756xx
Table 110. Dynamic characteristics: SD / MMC characteristics, VDD=2.7V to 3.6V(1)

Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fPP
Clock frequency in data transfer mode
50
MHz
SDMMC_CK/fPCLK2 frequency ratio
8/3
tW(CKL)
Clock low time
fpp =50 MHz
9.5
10.5
tW(CKH)
Clock high time
fpp =50 MHz
8.5
9.5
ns
CMD, D inputs (referenced to CK) in MMC and SD HS mode

tISU
Input setup time HS
fpp =50 MHz
2.5
tIH
Input hold time HS
fpp =50 MHz
ns
CMD, D outputs (referenced to CK) in MMC and SD HS mode

tOV
Output valid time HS
fpp =50 MHz
11.5
12
tOH
Output hold time HS
fpp =50 MHz
10.5
ns
CMD, D inputs (referenced to CK) in SD default mode

tISUD
Input setup time SD
fpp =25 MHz
tIHD
Input hold time SD
fpp =25 MHz
ns
CMD, D outputs (referenced to CK) in SD default mode

tOVD
Output valid default time SD
fpp =25 MHz
1.5
tOHD
Output hold default time SD
fpp =25 MHz
0.5
ns
1. Guaranteed by characterization results,.
Table 111. Dynamic characteristics: eMMC characteristics, VDD=1.71V to 1.9V(1)(2)

Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fPP
Clock frequency in data transfer mode
50
MHz
SDMMC_CK/fPCLK2 frequency ratio
8/3
tW(CKL)
Clock low time
fpp =50 MHz
9.5
10.5
tW(CKH)
Clock high time
fpp =50 MHz
8.5
9.5
ns
CMD, D inputs (referenced to CK) in eMMC mode

tISU
Input setup time HS
fpp =50 MHz
0.5
tIH
Input hold time HS
fpp =50 MHz
3.5
ns
CMD, D outputs (referenced to CK) in eMMC mode

tOV
Output valid time HS
fpp =50 MHz
12
12.5
tOH
Output hold time HS
fpp =50 MHz
11

2. Cload = 20 pF.
196/228
DocID027589 Rev 4
ns
STM32F756xx
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
LQFP100, 14 x 14 mm low-profile quad flat package

information
Figure 79. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline
MM
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1. Drawing is not to scale.
DocID027589 Rev 4
197/228
227
Package information
STM32F756xx
Table 112. LQPF100, 14 x 14 mm 100-pin low-profile quad flat package mechanical

data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
1.600
0.0630
A1
0.050
0.150
0.0020
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
0.170
0.220
0.270
0.0067
0.0087
0.0106
0.090
0.200
0.0035
0.0079
15.800
16.000
16.200
0.6220
0.6299
0.6378
D1
13.800
14.000
14.200
0.5433
0.5512
0.5591
D3
12.000
0.4724
15.800
16.000
16.200
0.6220
0.6299
0.6378
E1
13.800
14.000
14.200
0.5433
0.5512
0.5591
E3
12.000
0.4724
0.500
0.0197
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
1.000
0.0394
3.5
3.5
ccc
0.080
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
198/228
DocID027589 Rev 4
STM32F756xx
Package information
recommended footprint

AIC
1. Dimensions are expressed in millimeters.
Marking of engineering samples

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
top view example
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7(5
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1. Parts marked as ES, E or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
DocID027589 Rev 4
199/228
227
Package information
6.2
STM32F756xx

package information
GGG &

package outline
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Table 113. TFBGA100, 8 x 8 0.8 mm thin fine-pitch ball grid array

package mechanical data
inches(1)
millimeters
Symbol
200/228
Min
Typ
Max
Min
Typ
Max
1.100
0.0433
A1
0.150
0.0059
A2
0.760
0.0299
0.350
0.400
0.450
0.0138
0.0157
0.0177
DocID027589 Rev 4
STM32F756xx
Package information
Table 113. TFBGA100, 8 x 8 0.8 mm thin fine-pitch ball grid array
package mechanical data (continued)
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
7.850
8.000
8.150
0.3091
0.3150
0.3209
D1
7.200
0.2835
7.850
8.000
8.150
0.3091
0.3150
0.3209
E1
7.200
0.2835
0.800
0.0315
0.400
0.0157
0.400
0.0157
ddd
0.100
0.0039
eee
0.150
0.0059
fff
0.080
0.0031

package recommended footprint
'SDG
'VP
DocID027589 Rev 4
201/228
227
Package information
STM32F756xx
Table 114. TFBGA100 recommended PCB design rules (0.8 mm pitch BGA)
Dimension
Recommended values
Pitch
0.8
Dpad
0.400 mm
Dsm
0.470 mm typ (depends on the soldermask

registration tolerance)
Stencil opening
0.400 mm
Stencil thickness
Between 0.100 mm and 0.125 mm
Pad trace width
0.120 mm

The following figure gives an example of topside marking orientation versus ball A1 identifier
location.
Figure 84. TFBGA100, 8 8 0.8mm thin fine-pitch ball grid array package
top view example
45.'
7()
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3
'DWHFRGH
%DOO$
LGHQWLILHU
88
069
202/228
DocID027589 Rev 4
STM32F756xx
6.3
Package information
WLCSP143, 4.539x 5.849 mm, 0.4 mm pitch wafer level chip

scale package information
Figure 85. WLCSP143, 4.539x 5.849 mm, 0.4 mm pitch wafer level chip scale
package outline
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Table 115. WLCSP143, 4.539x 5.849 mm, 0.4 mm pitch wafer level chip scale
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.525
0.555
0.585
0.0207
0.0219
0.0230
A1
0.175
0.0069
DocID027589 Rev 4
203/228
227
Package information
STM32F756xx
Table 115. WLCSP143, 4.539x 5.849 mm, 0.4 mm pitch wafer level chip scale
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.380
0.0150
0.025
0.0010
b(3)
0.220
0.250
0.280
0.0087
0.0098
0.0110
4.504
4.539
4.574
0.1773
0.1787
0.1801
5.814
5.849
5.884
0.2289
0.2303
0.2317
0.400
0.0157
e1
4.000
0.1575
e2
4.800
0.1890
0.2695
0.0106
0.5245
0.0206
aaa
0.100
0.0039
bbb
0.100
0.0039
ccc
0.100
0.0039
ddd
0.050
0.0020
eee
0.050
0.0020
A2
A3
(2)

2. Back side coating.
3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
Figure 86. WLCSP143, 4.539x 5.849 mm, 0.4 mm pitch wafer level chip scale
'SDG
'VP
$B)3B9
204/228
DocID027589 Rev 4
STM32F756xx
Package information
Table 116. WLCSP143 recommended PCB design rules
Dimension
Recommended values
Pitch
0.4
Dpad
0.225 mm
Dsm
0.290 mm typ. (depends on the soldermask

registration tolerance)
Stencil opening
0.250 mm
Stencil thickness
0.100 mm

location.
Figure 87. WLCSP143, 0.4 mm pitch wafer level chip scale package
top view example
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LGHQWLILHU
45.';(:
5HYLVLRQFRGH
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88
069
DocID027589 Rev 4
205/228
227
Package information
6.4
STM32F756xx

information
Figure 88. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline
!
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Table 117. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package

mechanical data
inches(1)
millimeters
Symbol
206/228
Min
Typ
Max
Min
Typ
Max
1.600
0.0630
A1
0.050
0.150
0.0020
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
0.170
0.220
0.270
0.0067
0.0087
0.0106
0.090
0.200
0.0035
0.0079
21.800
22.000
22.200
0.8583
0.8661
0.874
DocID027589 Rev 4
STM32F756xx
Package information
mechanical data (continued)
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
D1
19.800
20.000
20.200
0.7795
0.7874
0.7953
D3
17.500
0.689
21.800
22.000
22.200
0.8583
0.8661
0.8740
E1
19.800
20.000
20.200
0.7795
0.7874
0.7953
E3
17.500
0.6890
0.500
0.0197
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
1.000
0.0394
3.5
3.5
ccc
0.080
0.0031


DLH
DocID027589 Rev 4
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227
Package information
STM32F756xx

location.
Figure 90. LQFP144, 20 x 20mm, 144-pin low-profile quad flat package
top view example
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3
';(5
: 88
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208/228
DocID027589 Rev 4
STM32F756xx

information
# 3EATINGPLANE
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6.5
Package information
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GAUGEPLANE
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mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
1.600
0.0630
A1
0.050
0.150
0.0020
0.0059
A2
1.350
1.450
0.0531
0.0060
0.170
0.270
0.0067
0.0106
0.090
0.200
0.0035
0.0079
23.900
24.100
0.9409
0.9488
DocID027589 Rev 4
209/228
227
Package information
STM32F756xx

inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
23.900
24.100
0.9409
0.9488
0.500
0.0197
HD
25.900
26.100
1.0200
1.0276
HE
25.900
26.100
1.0200
1.0276
0.450
0.750
0.0177
0.0295
L1
1.000
0.0394
ZD
1.250
0.0492
ZE
1.250
0.0492
ccc
0.080
0.0031
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STM32F756xx
Package information

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DocID027589 Rev 4
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Package information
STM32F756xx

location.
top view example
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information
6($7,1*
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Package information

H
6)@.&@7

mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
1.600
--
0.0630
A1
0.050
0.150
0.0020
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
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227
Package information
STM32F756xx

inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.170
0.220
0.270
0.0067
0.0087
0.0106
0.090
0.200
0.0035
0.0079
29.800
30.000
30.200
1.1732
1.1811
1.1890
D1
27.800
28.000
28.200
1.0945
1.1024
1.1102
D3
25.500
1.0039
29.800
30.000
30.200
1.1732
1.1811
1.1890
E1
27.800
28.000
28.200
1.0945
1.1024
1.1102
E3
25.500
1.0039
0.500
0.0197
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
1.000
0.0394
3.5
7.0
3.5
7.0
ccc
0.080
0.0031
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STM32F756xx
Package information

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227
Package information
STM32F756xx

location.
top view example
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DocID027589 Rev 4
STM32F756xx
6.7
Package information
UFBGA 176+25, 10 x 10 x 0.65 mm ultra thin-pitch ball grid

array package information
package outline
&
^

$EDOO
LGHQWLILHU
$EDOO
LQGH[
DUHD
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KddKDs/t
EEDOOV
dKWs/t
HHH 0 & $
III 0 &
Ds
Table 120. UFBGA 176+25, 10 10 0.65 mm ultra thin fine-pitch ball grid array
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.460
0.530
0.600
0.0181
0.0209
0.0236
A1
0.050
0.080
0.110
0.002
0.0031
0.0043
A2
0.400
0.450
0.500
0.0157
0.0177
0.0197
0.230
0.280
0.330
0.0091
0.0110
0.0130
9.950
10.000
10.050
0.3917
0.3937
0.3957
9.950
10.000
10.050
0.3917
0.3937
0.3957
0.650
0.0256
0.400
0.450
0.500
0.0157
0.0177
0.0197
ddd
0.080
0.0031
eee
0.150
0.0059
fff
0.080
0.0031
DocID027589 Rev 4
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227
Package information
STM32F756xx
Figure 98. UFBGA176+25, 10 x 10 x 0.65 mm, ultra fine-pitch ball grid array
'SDG
'VP
&Ws
Table 121. UFBGA176+25 recommended PCB design rules (0.65 mm pitch BGA)
Dimension
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Recommended values
Pitch
0.65 mm
Dpad
0.300 mm
Dsm
0.400 mm typ. (depends on the soldermask registration tolerance)
Stencil opening
0.300 mm
Stencil thickness
Pad trace width
0.100 mm
DocID027589 Rev 4
STM32F756xx
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Package information
6.8
STM32F756xx

package information
package outline
= 6HDWLQJSODQH
GGG =
$
$ $
'
H
$EDOO
$EDOO
LGHQWLILHU LQGH[DUHD
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III 0 =
%277209,(:
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Table 122. TFBGA216, 13 13 0.8 mm thin fine-pitch ball grid array

inches(1)
millimeters
Symbol
220/228
Min
Typ
Max
Min
Typ
Max
1.100
0.0433
A1
0.150
0.0059
A2
0.760
0.0299
0.350
0.400
0.450
0.0138
0.0157
0.0177
12.850
13.000
13.150
0.5118
0.5118
0.5177
D1
11.200
0.4409
12.850
13.000
13.150
0.5118
0.5118
0.5177
E1
11.200
0.4409
0.800
0.0315
0.900
0.0354
DocID027589 Rev 4
STM32F756xx
Package information
Table 122. TFBGA216, 13 13 0.8 mm thin fine-pitch ball grid array
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.900
0.0354
ddd
0.100
0.0039
eee
0.150
0.0059
fff
0.080
0.0031

'SDG
'VP
$/B)3B9
Table 123. TFBGA216 recommended PCB design rules (0.8 mm pitch BGA)
Dimension
Recommended values
Pitch
0.8
Dpad
0.400 mm
Dsm
0.470 mm typ. (depends on the soldermask registration tolerance)
Stencil opening
0.400 mm
Stencil thickness
Pad trace width
0.120 mm
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227
Package information
STM32F756xx

location.
package top view example
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DocID027589 Rev 4
STM32F756xx
6.9
Package information
Thermal characteristics
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x JA)
Where:
TA max is the maximum ambient temperature in C,
JA is the package junction-to-ambient thermal resistance, in C/W,
PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = (VOL IOL) + ((VDD VOH) IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Table 124. Package thermal characteristics
Symbol
JA
Parameter
Value
Thermal resistance junction-ambient

LQFP100 - 14 14 mm / 0.5 mm pitch
43

TFBGA100 - 8 8 mm / 0.8 mm pitch
57

WLCSP143
31.2

LQFP144 - 20 20 mm / 0.5 mm pitch
40

LQFP176 - 24 24 mm / 0.5 mm pitch
38

LQFP208 - 28 28 mm / 0.5 mm pitch
19

UFBGA176 - 10 10 mm / 0.5 mm pitch
39

TFBGA216 - 13 13 mm / 0.8 mm pitch
29
Unit
C/W
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.
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227
Part numbering
STM32F756xx
Part numbering
Table 125. Ordering information scheme
Example:
STM32
756 V G
6 xxx
Device family
STM32 = ARM-based 32-bit microcontroller
Product type
F = general-purpose
Device subfamily
756= STM32F756xx, USB OTG FS/HS,
camera interface, Ethernet, LCD-TFT, cryptographic acceleration
Pin count
V = 100 pins
Z = 143 and 144 pins
I = 176 pins
B = 208 pins
N = 216 pins
Flash memory size
E = 512 Kbytes of Flash memory
G = 1024 Kbytes of Flash memory
Package
T = LQFP
K = UFBGA
H = TFBGA
Y = WLCSP
Temperature range
6 = Industrial temperature range, 40 to 85 C.
7 = Industrial temperature range, 40 to 105 C.
Options
xxx = programmed parts
TR = tape and reel
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
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Recommendations when using internal reset OFF
Appendix A
Recommendations when using internal reset

OFF
When the internal reset is OFF, the following integrated features are no longer supported:
A.1
The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled.
The brownout reset (BOR) circuitry must be disabled.
The embedded programmable voltage detector (PVD) is disabled.
VBAT functionality is no more available and VBAT pin should be connected to VDD.
The over-drive mode is not supported.
Operating conditions
Table 126. Limitations depending on the operating power supply range
Operating
power
supply
range
ADC
operation
Maximum
Flash
memory
access
frequency
with no wait
states
(fFlashmax)
VDD =1.7 to
2.1 V(3)
Conversion
time up to
1.2 Msps
20 MHz
Maximum Flash
memory access
frequency with
wait states (1)(2)
180 MHz with 8

wait states and
over-drive OFF
I/O operation
Possible Flash
memory
operations
8-bit erase and

No I/O
program
compensation
operations only
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no
wait state is required.
2. Thanks to the ART accelerator on ITCM interface and L1-cache on AXI interface, the number of wait states
given here does not impact the execution speed from the Flash memory since the ART accelerator or L1cache allows to achieve a performance equivalent to 0-wait state program execution.
3. VDD/VDDA minimum value of 1.7 V, with the use of an external power supply supervisor (refer to
Section 2.17.1: Internal reset ON).
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Revision history
STM32F756xx
Revision history
Table 127. Document revision history
Date
Revision
26-May-2015
Initial release.
Updated Table 53: ESD absolute maximum ratings adding packages.

Updated note of Table 32: Typical and maximum current consumptions
in Standby mode.
Updated Figure 11: STM32F756Vx LQFP100 pinout replacing PB13
and PB14 by PE13 and PE14.
Updated Table 51: EMS characteristics replacing 168 MHz by
216 MHz.
Updated Section 2.9: Quad-SPI memory interface (QUADSPI)
removing STM32F75xx.
Removed Table 86. Ethernet DC electrical characteristics.
Updated all the notes removing not tested in production.
Updated Table 43: Main PLL characteristics, Table 44: PLLI2S
characteristics and Table 45: PLLISAI characteristics fVCO_OUT
output at min value 100 and VCO freq at 100 MHz.
Updated Table 13: STM32F756xx register boundary addresses
replacing cortex-M4 by Cortex-M7.
Updated Table 87: Dynamics characteristics: Ethernet MAC signals for
MII td (TXEN) and td (TXD) min value at 6.5 ns.
20-Oct-2015
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Changes
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STM32F756xx
Revision history
Table 127. Document revision history (continued)
Date
10-Dec-2015
16-Feb-2016
Revision
Changes
Updated Table 10: STM32F756xx pin and ball definition additional

function column: WKUP1, 2, 3, 4, 5, 6 must be respectively PA0, PA2,
PC1, PC13, PI8, PI11.
Updated Table 62: ADC characteristics adding VREF- negative voltage
reference.
Update Table 14: Voltage characteristics adding table note 3.
Updated Table 69: Temperature sensor calibration values memory
addresses.
Updated Table 72: Internal reference voltage calibration values
memory addresses.
Updated Table 52: EMI characteristics modifying 25/180 MHz by

25/200 MHz.
Updated Figure 13: STM32F756Zx WLCSP143 ballout.
Added TFBGA100 8 x 8 mm package:
Updated Cover page.
Updated Section 1: Description.
Updated Table 2: STM32F756xx features and peripheral counts.
Updated Table 4: Regulator ON/OFF and internal reset ON/OFF
availability.
Updated Section 3: Pinouts and pin description adding Figure 12:
STM32F756Vx TFBGA100 ballout and adding TFBGA100 ball
description in Table 10: STM32F756xx pin and ball definition.
Updated Table 17: General operating conditions.
Updated Table 53: ESD absolute maximum ratings.
Updated notes below Figure 43 and Figure 44.
Updated Section 6: Package information adding Section 6.2:
TFBGA100, 8 x 8 x 0.8 mm thin fine-pitch ball grid array package
information and adding thermal resistance in Table 124: Package
thermal characteristics.
Updated Table 10: STM32F756xx pin and ball definition note 5.
Updated Table 35: Peripheral current consumption peripheral
consumption on APB1 and APB2.
Updated Figure 18: STM32F756Nx TFBGA216 ballout.
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STM32F756xx
IMPORTANT NOTICE PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (ST) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to STs terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
2016 STMicroelectronics All rights reserved
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STM32F756xx

ARM-based Cortex-M7 32b MCU+FPU, 462DMIPS, up to 1MB Flash/320+16+ 4KB

Core: ARM 32-bit Cortex -M7 CPU with FPU,

LQFP100 (14x14 mm)

UFBGA176 (10x10 mm)

General-purpose DMA: 16-stream DMA

Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 15

ARM Cortex-M7 with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 18

AXI-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Quad-SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 21

Chrom-ART Accelerator (DMA2D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 22

External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 22

Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 30

Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 30

Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 34

General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Low-power timer (LPTIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Universal synchronous/asynchronous receiver transmitters (USART) . . 37

Serial peripheral interface (SPI)/inter- integrated sound interfaces (I2S) . 38

Serial audio interface (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

SPDIFRX Receiver Interface (SPDIFRX) . . . . . . . . . . . . . . . . . . . . . . . . . 39

Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Audio and LCD PLL(PLLSAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

SD/SDIO/MMC card host interface (SDMMC) . . . . . . . . . . . . . . . . . . . . . 40

Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 41

Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 41

High-definition multimedia interface (HDMI) - consumer

Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Embedded Trace Macrocell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 97

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97

General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99

VCAP1/VCAP2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101

Operating conditions at power-up / power-down (regulator ON) . . . . . 102

Operating conditions at power-up / power-down (regulator OFF) . . . . 102

Reset and power control block characteristics . . . . . . . . . . . . . . . . . . 102

Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 104