Scribd
Upload
485 views

Eb 13003

This document provides specifications for the EB13003 transistor made by Shenzhen Shengyuan Semiconductors Co., LTD. The transistor has high voltage capability up to 600V, high speed switching, and a wide safe operating area. It is suitable for applications such as fluorescent lamp ballasts, electronic ballasts, and electronic transformers. Key parameters specified include maximum ratings for voltage, current and power dissipation as well as electrical characteristics such as cutoff currents, saturation voltages, and gain.

Uploaded by

Luis Rola
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
485 views

Eb 13003

This document provides specifications for the EB13003 transistor made by Shenzhen Shengyuan Semiconductors Co., LTD. The transistor has high voltage capability up to 600V, high speed switching, and a wide safe operating area. It is suitable for applications such as fluorescent lamp ballasts, electronic ballasts, and electronic transformers. Key parameters specified include maximum ratings for voltage, current and power dissipation as well as electrical characteristics such as cutoff currents, saturation voltages, and gain.

Uploaded by

Luis Rola
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Shenzhen Shengyuan Semiconductors Co., LTD.

www.DataSheet4U.com
Product Specification

EB SERIES TRANSISTORS EB13003

FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA

APPLICATION FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER




Absolute Maximum Ratings Tc=25qC TO-126
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 600 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current IC 1 A
Total Power Dissipation PC 30 W
Junction Temperature Tj 150 qC
Storage Temperature Tstg -65-150 qC


Electronic Characteristics Tc=25qC
CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT
Collector-Base Cutoff Current ICBO VCB=600V 100 A
Collector-Emitter Cutoff Current ICEO VCE=400V,IB=0 250 A
Collector-Emitter Voltage VCEO IC=10mA,IB=0 400 V
Emitter-Base Voltage VEBO IE=1mA,IC=0 9 V
IC=0.2A,IB=0.04A 0.5
Collector-Emitter Saturation Voltage Vce IC=0.75A,IB=0.25A 0.7 V
IC=1.5A,IB=0.5A 2.0
Base-Emitter Saturation Voltage Vb IC=0.75A,IB=0.25A 1.2 V
VCE=5V,IC=10mA 8
DC Current Gain hFE VCE=5V,IC=0.5A 10 40
VCE=5V,IC=1.0A 8
Storage Time tS VCC=250V, 3
IC=5IB PS
Falling Time tf 0.8
IB1= -IB2=0.2A

Shengyuan semiconductors 2004.10 1

You might also like