2007-3

PRODUCT GUIDE

Discrete IGBTs
 1 Features and Structure

IGBT: Insulated Gate Bipolar Transistor

IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
advantage of high-voltage drive.
The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
applications that require high breakdown voltage and high current.
Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the
carrier.

Features of the Toshiba Discrete IGBTs

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in
inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible
power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

Construction
The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure.
Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during
conduction. Unlike a MOSFET, the IGBT does not have an integral reverse diode, since the collector
contact is mede on the p + layer.
Structure Equivalent Circuit
Emitter
Collector Electrode
Gate
n+ n+ n+
p p p
p+
n
Gate n+
Collector Collector
p+

Emitter
Collector

Rn- (MOD) Rn- (MOD)

D
A
L

P
A
T

G
E

IN
M

Gate Gate
R

N
E

O
T

B
IT

TE
M
E

GA
R

TE
O
T

ME
N
LA

TAL
O

p+
U

IC
S

IL
IN

S
LY

+
n p+ p
O

n+
P

n+ n+ p
+
p+
p+ n+
p+
n+ Emitter Emitter
n+
n
+
n A L
p+ +
p ET
M
or
ct
lle
Co

2
 2 IGBT Technical Overview
Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which
require high input impedance and fast switching. However, at high voltages, the on-state resistance
rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss
of power MOSFETs.
On the other hand, the IGBT structures a PNP bipolar transistor and a collector contact made on the p +
layer. The IGBT has a low on-state voltage drop due to conductivity modulation.
The following figure shows the V CE(sat) curve of a soft-switching 900-V IGBT. Toshiba offers IGBTs
featuring low saturation voltage and fast switching by using carrier lifetime control techniques.
In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction
and high-frequency-switching applications. The improvements in IGBTs will be spurred by optimized
wafers, smaller pattern geometries and improved carrier lifetime control techniques.

Soft-Switching 900-V IGBT (Example)

3.5
Ta = 25C
VCE(sat) (V) (Toshiba standard)

2.5 4th Gen. GT60M303

0.25 (s), 2.1 (V) Typ.

5th Gen. GT60M323

0.09 (s), 2.3 (V) Typ.

1.5
0 0.1 0.2 0.3 0.4 0.5
tf (s) (Toshiba standard)

Discrete IGBT Development Trends

(1) High breakdown voltage (3rd generation): low VCE(sat) and high ruggedness due to optimized carrier injection and reduced wafer thickness
1200 V
(2) Soft switching (5th generation): improved tradeoff between VCE(sat) and tf due to adoption of the trench gate structure

(1) Soft switching (4th generation): improved tradeoff between VCE(sat) and tf due to adoption of the trench gate structure
900 V
(2) Soft switching (5th generation): optimized wafers and design rules

(1) High breakdown voltage (3rd generation): low VCE(sat) and high ruggedness due to fine process geometries (up to 20 kHz)
600 V (2) Fast switching (FS): trench gate structure and carrier injection optimization (up to 50 kHz)
(3) Soft switching (4th generation): improved tradeoff between VCE(sat) and tf due to adoption of the trench gate structure

(1) Strobe flash (4th generation): trench gate structure and reduced gate drive voltage (4-V drive voltage, Icp = 150 A, package: SOP-8)

400 V (2) Strobe flash (5th generation) : Optimized wafers and design rules
Aluminum strap bonding technology (4-V drive voltage, Icp = 200 A, package: SOP-8)
Low-profile package (3-V drive voltage, Icp = 150 A, package: TSSOP-8)
(1) Plasma display panel (PDP): Low losses due to optimized wafer design
300 to
400 V (2) New package structure (Cu connectors)
(3) Low losses due to submicron
process technology

2000 2002 2004 2006 2008

3
 3 Discrete IGBT Product List
TSSOP-8 SOP-8 DP TO-220NIS TO-220SIS TO-220FL TO-220SM TO-220AB TO-3P(N) TO-3P(N)IS TO-3P(LH)
Straight Formed
IGBT Current
Breakdown Leads Leads
Applications and Rating Ic(A)
Voltage
Features @Ta = 25C
VCES(V)
@Ta = 25C

DC Pulse
5 10 GT5J301 GT5J311
10 20 GT10J303 GT10J312 GT10J301
15 30 GT15J301 GT15J311
GT20J301
20 40
600 GT20J101
Hard-switching GT30J301
30 60
series GT30J101
GT50J301
Highly rugged products 50 100
GT50J102
fc: up to 20 kHz
GT10Q301
10 20
GT10Q101
GT15Q301
1200 15 30
GT15Q102
GT25Q301
25 50
GT25Q102
10 20 GT10J321
Hard-switching 15 30 GT15J321
series 20 40 GT20J321
600 GT30J324
Fast-switching (FS) 30 60
series GT30J121
fc: up to 50 kHz GT50J325
50 100
GT50J121
General-purpose inverters
Low-VCE(sat) IGBT 600 15 30 GT15J331
40 100 GT40G121
400
50 100 GT50G321
30 100 GT30J322
37 100 GT35J321
GT50J327 GT50J322
100
50 GT50J322H
600 120 GT50J122
GT60J321
60 120 GT60J323
GT60J323H
Soft-switching 80 160 GT80J101B
series
15 30 GT15M321
900 GT60M303
60 120
GT60M323
50 120 GT50N321
1000 57 120 GT60N322
60 120 GT60N321
1050 60 120 GT60N323
39 80 GT40Q323
1200
42 80 GT40Q321
1500 40 80 GT40T301
PFC 600 30 100 GT30J122
130 GT5G131 GT5G103
GT8G133
150 GT8G132 GT8G103
Strobe flash 400 GT8G136
170 GT25G101 GT25G101
200 GT10G131
GF30F121
300 120
Plasma display GF30F122
panels 140 GT35F131
400 GT30F121
120 GT30G131
GT30F122

4 Part Numbering Scheme

Example Table 1 Letter Voltage (V) Letter Voltage (V)
GT 60 M 3 03 A C 150 M 900
Version D 200 N 1000
Serial number E 250 P 1100
1: N-channel 3: N-channel with built-in F 300 Q 1200
G 400 R 1300
2: P-channel freewheeling diode H 500 S 1400
Voltage rating (see Table 1.) J 600 T 1500
Collector current rating (DC) K 700 U 1600
Discrete IGBT L 800 V 1700

4
 5 -1 Hard-Switching Applications
The fast-switching (FS) series, a new addition to our third-generation IGBTs features high ruggedness which
helps to improve the energy efficiency of electronic equipment.

General-Purpose Inverter Air Inverter Washing

Inverters Conditioners Machines UPS

Rectifier PL PL
circuit Inverter Output

Input
CB
Control

Hard-switching series Highly Rugged IGBTs

Our third-generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus
improve energy efficiency. The following graphs compare the thermal and turn-on characteristics of our third-generation
IGBTs and 500-V MOSFETs

IC - VCE Temperature Characteristics Turn-On Waveform

Low saturation voltage with minimal temperature dependence Superior reverse-recovery characteristics due to built-in diode
with optimal characteristics
50
GT50J301
VCE
40 MOSFET GT50J301 MOSFET
Collector Current, IC (A)

30
@VGE = 15 V MOSFET
VCE: 100 V/div

GT50J301
IC: 10 A/div

20
GT50J301:
Ta = 25C Ic
Ta = 125C
10 @Ta = 125C
MOSFET (500 V / 50 A):
VCC = 300 V
Ta = 25C
VGE = + 15 V
Ta = 125C
0 di/dt 400 A/s
0 2 4 6 8 10
Collector - Emitter Voltage, VCE (V) t : 0.1s/div

Power Loss vs. Carrier Frequency Characteristics

80
Simulation data for inverter applications

60
Loss (W/Tr)

GT50J301

40
@fo = 50 Hz MOSFET
Po = 7.5 kW

GT50J301:
Ta = 25C 20
Ta = 125C
MOSFET (500 V / 50 A):
Ta = 25C
Ta = 125C 0
0 4 8 12 16 20 24
Carrier Frequency fC (kHz)
5
 Hard-switching series Fast-Switching (FS) Series

Compared to the hard-switching series, the FS series is optimized for switching speed, reducing the total switching
loss (Eon + Eoff) by 30% (according to Toshibas comparative test).

Typical Waveforms
GT20J321(FS) GT20J301(3rd generation)

Eon = 0.6 mJ Eon = 0.95 mJ

Eoff = 0.47 mJ Eoff = 0.56 mJ

VGE VGE

VCE VCE
Ta = 25C
IC IC IC IC
LOSS
LOSS

Eon = 0.9 mJ Eon = 1.1 mJ

Eoff = 0.54 mJ Eoff = 1.0 mJ

VGE VGE

VCE VCE
Ta = 125C
IC IC IC IC
LOSS
LOSS

(LOSS: 0.5 mJ/div)

(VCE: 50 V/div, IC: 5 A/div, VGE: 10 V/div, LOSS: 0.2 mJ/div, t: 0.2 s/div)

Reduced switching loss of fast-switching IGBTs in comparison with highly rugged IGBTs
Test condition: IC = 20 A, VGE = 15 V, RG = 33 , Ta = 125C, with inductive load, VCC = 300 V

Turn-On Loss Turn-Off Loss

0.9 mJ 1.1mJ 0.54 mJ 1.0 mJ

Fast-switching Highly rugged Fast-switching Highly rugged

IGBT IGBT IGBT IGBT
GT20J321 GT20J301 GT20J321 GT20J301

6
 Hard-switching series Product list for Hard-Switching Applications
Circuit Configuration Typical Collector Built-in FRD Collector

Gate Gate

Emitter Emitter
600-V and 1200-V Highly Rugged Series (3rd Generation)
Absolute Maximum Ratings VCE(sat) Typ. tf Typ.
VCES IC PC Circuit
Main Features Part Number Package Configuration @IC @VGE Load Remarks
Applications DC Pulse Tc = 25C (1) (2)
(V) (A) (A) (W) Type (V) (A) (V) (s)
GT10Q101 1200 10 20 140 TO-3P(N) - 2.1 10 15 0.16 L
High ruggedness

GT10Q301 1200 10 20 140 TO-3P(N) - Built-in FRD 2.1 10 15 0.16 L

(1200V)

GT15Q102 1200 15 30 170 TO-3P(N) - 2.1 15 15 0.16 L

GT15Q301 1200 15 30 170 TO-3P(N) - Built-in FRD 2.1 15 15 0.16 L
GT25Q102 1200 25 50 200 TO-3P(LH) - 2.1 25 15 0.16 L
GT25Q301 1200 25 50 200 TO-3P(LH) - Built-in FRD 2.1 25 15 0.16 L
GT5J301 600 5 10 28 TO-220NIS - Built-in FRD 2.1 5 15 0.15 L
Motor driving (UPS/PFC)

GT5J311 600 5 10 45 TO-220SM SMD Built-in FRD 2.1 5 15 0.15 L

GT10J301 600 10 20 90 TO-3P(N) - Built-in FRD 2.1 10 15 0.15 L
GT10J303 600 10 20 30 TO-220NIS - Built-in FRD 2.1 10 15 0.15 L
GT10J312 600 10 20 60 TO-220SM SMD Built-in FRD 2.1 10 15 0.15 L
High ruggedness

GT15J301 600 15 30 35 TO-220NIS - Built-in FRD 2.1 15 15 0.15 L

GT15J311 600 15 30 70 TO-220FL - Built-in FRD 2.1 15 15 0.15 L
(600V)

GT15J311 600 15 30 70 TO-220SM SMD Built-in FRD 2.1 15 15 0.15 L

GT20J101 600 20 40 130 TO-3P(N) - 2.1 20 15 0.15 L
GT20J301 600 20 40 130 TO-3P(N) - Built-in FRD 2.1 20 15 0.15 L
GT30J101 600 30 60 155 TO-3P(N) - 2.1 30 15 0.15 L
GT30J301 600 30 60 155 TO-3P(N) - Built-in FRD 2.1 30 15 0.15 L
GT50J102 600 50 100 200 TO-3P(LH) - 2.1 50 15 0.15 L
GT50J301 600 50 100 200 TO-3P(LH) - Built-in FRD 2.1 50 15 0.15 L
Low-frequency
Power factor
correction

switching

GT30J122 600 30 100 75 TO-3P(N)IS - 2.1 50 15 0.25 R Intended for

partial-switch

600-V Fast-Switcing Series (4th Generation) (FS: Fast Switching)

Absolute Maximum Ratings VCE(sat) Typ. tf Typ.

VCES IC PC Circuit
Main Features Part Number Package Configuration @IC @VGE Load Remarks
Applications DC Pulse Tc = 25C (2)
(1)
(V) (A) (A) (W) Type (V) (A) (V) (s)
GT10J321 600 10 20 29 TO-220NIS - Built-in FRD 2.0 10 15 0.05 L
Inverter power supplies

GT15J321 600 15 30 30 TO-220NIS - Built-in FRD 1.9 15 15 0.03 L

(UPS/PFC/motor)

Fast switching

GT15J331 600 15 30 70 TO-220SM SMD Built-in FRD 1.75 15 15 0.10 L Low VCE(sat)
GT20J321 600 20 40 45 TO-220NIS - Built-in FRD 2.0 20 15 0.04 L
GT30J121 600 30 60 170 TO-3P(N) - 2.0 30 15 0.05 L
GT30J324 600 30 60 170 TO-3P(N) - Built-in FRD 2.0 30 15 0.05 L
GT50J121 600 50 100 240 TO-3P(LH) - 2.0 50 15 0.05 L
GT50J325 600 50 100 240 TO-3P(LH) - Built-in FRD 2.0 50 15 0.05 L
1 : Typical ciruit configuration
2 R : Resistive load
L : Inductive load

7
 5 -2 Soft-Switching Applications

Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a

soft-switching technique which exhibits low switching loss. Toshiba offers IGBTs suitable
for soft-switching applications.

Microwave Ovens IH Rice Cookers

IH Cooktops MFP

AC Input Voltage Circuit IGBT Rating

Voltage Resonance Waveform

VCES = 900 V to 1000 V
100 V to 120 V
IC = 15 A to 60 A
IC
IC

VCE VCES = 1200 V to 1500 V

200 V to 240 V VCE
IC = 40 A

Current Resonance Waveform

VCES = 400 V
IC = 40 A to 50 A
100 V to 240 V IC
IC
VCES = 600 V
VCE
VCE IC = 30 A to 80 A

IH: Induction heating

MFP: Multifunction Printer

8
 Soft-switching series Product List for Soft-Switching Applications

Circuit Configuration Typical Built-in FRD

Collector Collector

Gate Gate

Emitter Emitter

IGBTs for Soft-Switching

Absolute Maximum Ratings VCE(sat) Typ. tf Typ.
Main VCES IC PC Circuit
Applications Features Part Number Package Configuration @IC @VGE Load Remarks
DC Pulse Tc = 25C (1) (2)
(V) (A) (A) (W) (V) (A) (V) (s)

GT40G121 40 80 100 TO-220AB 1.8 40 15 0.30

AC 100 V 400
GT50G321 50 100 130 TO-3P(LH) 1.8 50 15 0.30

GT30J322 30 60 75 2.1 50 15 0.25

TO-3P(N)IS
GT35J321 37 100 75 1.9 50 15 0.19
Current resonance

GT50J322 50 100 130 TO-3P(LH) 2.1 50 15 0.25

Built-in FRD
AC 200 V GT50J322H 50 100 130 2.2 50 15 0.16 Fast switching
600 TO-3P(N)
GT50J327 50 100 140 1.9 50 15 0.19
IH rice cookers and IH cooktops

GT60J321 60 120 200 1.55 60 15 0.30

GT60J323 60 120 170 TO-3P(LH) 1.9 60 15 0.16

GT60J323H 60 120 170 2.1 60 15 0.12 R Fast switching

GT15M321 15 30 55 TO-3P(N)IS 1.8 15 15 0.20

AC 100 V GT60M303 900 60 120 170 2.1 60 15 0.25

TO-3P(LH)
GT60M323 60 120 200 2.3 60 15 0.09 Fast switching
Voltage resonance

GT50N321 50 120 156 TO-3P(N) 2.5 60 15 0.25

GT60N321 1000 60 120 170 2.3 60 15 0.25

AC100-120V Built-in FWD
GT60N322 57 120 200 TO-3P(LH) 2.4 60 15 0.11 Fast switching

GT60N323 1050 60 120 190 2.6 60 15 0.22

GT40Q321 40 80 170 TO-3P(N) 2.8 40 15 0.41

1200
AC 200 V GT40Q323 39 80 200 TO-3P(N) 3.0 40 15 0.14

GT40T301 1500 40 80 200 TO-3P(LH) 3.7 40 15 0.25

1 : Typical ciruit configuration

2 R: Resistive load
L: Inductive load
FRD: Fast Recovery Diode
FWD: Free Wheeling Diode

9
 Comparisons Between Hard and Soft Switching (diagrams shown only as a guide)

Hard Switching Soft Switching

High-current,
SOA SOA Thermal resistance Limit area
high-voltage
locus
S/B Limit area
IC IC

High-current,
low-voltage and
low-current,
high-voltage locus
VCE VCE
SOA Locus for Hard Switching SOA Locus for Soft Switching

VCE VCE

IC VCE
IC
IC

Switching Characteristics Current Resonance Voltage Resonance

(Example) (Example) (Example)

5 -3 Strobe Flash Applications

Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller, and logic
levels are increasingly used to represent the gate drive voltage. Toshiba offers compact IGBTs featuring
low gate drive voltage.

As a voltage-controlled device, the IGBT requires low drive power dissipation.

IGBTs help reduce the number of components required for the strobe flash circuit. (compared with SCRs)
Strobe flash IGBTs are capable of switching large currents.

Single-Lens
DSC, Compact Camera
Reflex Camera

10
 Strobe flash applications Product List for Strobe Applications

3-V to 4.5-V Gate Drive Series

The IGBT can operate with a gate drive voltage of 3 V to 4.5 V. The common 3.3-V or 5-V internal power supply in a
camera can be used as a gate drive power supply to simplify the power supply circuitry. A zener diode is included
between the gate and emitter to provide ESD surge protection.

Example of an IGBT Gate Drive Circuit (3.3-V Power Supply)

Resistor Xe lamp
P-ch 910
Trigger transformer 3.3-V
Main SSM6L05FU
Capacitor power supply
91
2SC4738FT

Resonant capacitor 20 k 1.2 k

N-ch
IGBT 470
GT8G136

3V
0

3-V Gate Drive Series

VCE(sat) Max PC (W)
Part Number VCES / IC @Ta = 25C Package Remarks
(V) VGE / IC

GT5G131 400 V / 130 A 7 3 V / 130 A 1.1 SOP-8 5th generation

GT8G136 400 V / 150 A 7 3 V / 150 A 1.0 TSSOP-8 5th generation

4-and 4.5-V Gate Drive Series

VCE(sat) Max PC (W)
Part Number VCES / IC Package Remarks
@Ta = 25C
(V) VGE / IC

GT5G103 400 V / 130 A 8 4.5 V / 130 A 1.3 DP 3th generation

GT8G103 400 V / 150 A 8 4.5 V / 150 A 1.3 DP 3th generation

GT8G132 400 V / 150 A 7 4.0 V / 150 A 1.1 SOP-8 5th generation

GT8G133 400 V / 150 A 7 4.0 V / 150 A 1.1 TSSOP-8 5th generation

20-V Gate Drive Series

VCE(sat) Max
PC (W)
Part Number VCES / IC Package Remarks
@Ta = 25C
(V) VGE / IC

GT25G101 400V / 170 A 8 20 V / 170 A 1.3 TO-220FL

11
 5 -4 Plasma Display Panel Applications

Plasma Display

Previously, MOSFETs were used for the power supplies of

plasma display panels (PDPs). Recently, however, MOSFETs
are being replaced by IGBTs, which have lower VCE(sat) in a
large current area.

Example of a Plasma Display Panel Power Supply

Vsus
PDP (Sustain circuit)

X terminal (X sus output)

Xsus. circuit C1

Power recovery Sustain Separation Panel

circuit circuit Vsus circuit

Ysus. circuit
Y terminal (Y sus output)
C2

Plasma display panel series Product List for Plasma Display Panel Applications

300-V Series
PC (W)
Part Number VCES / Icp @100 s VCE(sat) Max (V) Package Remarks
@Ta = 25C

GT35F131 300 V / 140 A 3.4 (@140 A) 60 TO-220AB

GT30F121 300 V / 120 A 2.9 (@120 A) 35 TO-220SIS
GT30F122 300 V / 120 A 2.9 (@120 A) 25 TO-220SIS

400-V Series
PC (W)
Part Number VCES / Icp @100 s VCE(sat) Max (V) Package Remarks
@Ta = 25C

GT30G131 400 V / 120 A 3.2 (@120 A) 60 TO-220AB

GT30G121 400 V / 120 A 2.9 (@120 A) 35 TO-220SIS
GT30G122 400 V / 120 A 2.6 (@120 A) 25 TO-220SIS

12
 6 Package Dimensions
Unit: mm

TSSOP-8 SOP-8

8 5 8 5

6.0 0.3
4.4 0.2
4.4 0.1
6.4 0.3

1 4
0.595 typ. 0.4 0.1
0.25 M
(0.525) 1 4 0.25 0.05 1.27
0.85 0.05

0.65
+0.04
0.16 -0.02

0.15 0.05
+ 0.1
5.5 max
3.3 max

1.5 0.2
3.0 0.1 5.0 0.2

0.5 0.2
0.05 0.05

0.6 0.2

0.1 0.05
1, 2, 3. Emitter 1, 2, 3. Emitter

+ 0.1
0.05 0.1
4. Gate 4. Gate
5, 6, 7, 8. Collector 5, 6, 7, 8. Collector

DP (Straight Leads) DP (Bend Leads)

2.0 max

2.0 max
6.8 max
6.8 max
5.2 0.2 0.6 max
5.2 0.2 0.6 max

1.5 0.2
5.5 0.2

5.5 0.2

0.9
0.6 0.15
12.0 max

0.95 max
2.5
0.95 max
0.6 0.15 0.6 max 0.6 0.15
0.6 max
2.3 2.3 1.6 0.2
2.5 max

1 2 3
2.3 2.3
1.1 0.2

1 2 3
1. Gate 1. Gate
0.1 0.1

1.1 0.2
2.5 max

2. Collector 2. Collector
3. Emitter 3. Emitter

TO-220NIS TO-220SIS

10 0.3 3.2 0.2 2.7 0.2

10 0.3 3.2 0.2 2.7 0.2
3.9 3.0
3.9 3.0

15 0.3
5.6 max

15 0.3

1.14 0.15
1.1 1.1
13.0 min

13 0.5
2.8 max

0.75 0.15 0.69 0.15

0.25 M A
2.54 0.25 2.54 0.25 2.54 2.54
2.6

2.6 0.1
0.75 0.15

0.64 0.15
4.5 0.2

1 2 3
4.5 0.2

1. Gate 1. Gate
2. Collector 2. Collector
3. Emitter 1 2 3 3. Emitter

13
 Unit: mm

TO-220AB TO-220FL

10.3 max 3.6 0.2 1.32 10.3 max

1.32

3.0

2.5 max

10.6 max
9.1
15.7 max
6.7 max

12.6 min
1.6 max
12.6 min

1.3
2.5 max

0.76
0.76
2.6

2.54 0.25 2.54 0.25 0.5 2.54 0.25 2.54 0.25

4.7 max
4.7 max

1. Gate 1. Gate

0.5

2.6
2. Collector 2. Collector
1 2 3 3. Emitter 1 2 3 3. Emitter

TO-220SM TO-3P(N)

15.9 max 3.2 0.2

10.3 max

2.0

1.0
4.5
1.32

20.0 0.3
3.3 max
10.6 max
9.1

0.1

2.0
9.0
1.5
1.5

3 0.2

20.5 0.5
2.0 0.3
+ 0.3
0.6

0.76 1.0 0.25

2.54 2.54
5.45 0.2 5.45 0.2
1.8 max
+ 0.3
0.6 0.1

1 2 3
2.8
4.7 max
0.5

4.8 max
2.6

1. Gate 1. Gate
2. Collector 1 2 3 2. Collector
3. Emitter 3. Emitter

TO-3P(LH) TO-3P(N)IS

20.5 max 3.3 0.2 15.8 0.5 3.6 0.2 3.5

6.0

5.5
26.0 0.5

21.0 0.5
4.0

3.6 max
2.50

15.5

1.5
11.0
2.0
1.5

20.0 0.6

2.5
2.0

3.0
19.4 min

2.0
+ 0.3
1.0 0.25
+ 0.25
5.45 0.15 5.45 0.15 1.0 0.15
+ 0.25
0.6 0.10

5.2 max

5.45 0.2 5.45 0.2

1.5
2.8

1.0

+ 0.2
1 2 3 1. Gate
+ 0.25
0.15

3.15 0.1
5.0 0.3

2. Collector 1 2 3 1. Gate
0.6

3. Emitter 2. Collector
3. Emitter

14
 7 Final-Phase and Obsolete Products
The following products are in stock but are being phased out of production. The recommended replacements that
continue to be available are listed in the right-hand column. However, the characteristics of the recommended
replacements may not be exactly the same as those of the final-phase and obsolete products. Before using a
recommended replacement, be sure to check that it is suitable for use under the intended operating conditions.

Final-Phase or Absolute Maximum Ratings Recommended Absolute Maximum Ratings

Application Package Package
Obsolete Product VCES (V) IC (A) DC Obsolete Replacements VCES (V) IC (A) DC
MG30T1AL1 1500 30 IH GT40T301 1500 40 TO-3P(LH)
MG60M1AL1 900 60 IH GT60M303 900 60 TO-3P(LH)
GT40M101 900 40 TO-3P(N)IS
GT40M301 900 40 TO-3P(LH) GT60M303 900 60 TO-3P(LH)
GT40T101 1500 40 TO-3P(LH) GT40T301 1500 40 TO-3P(LH)
GT50L101 800 50 TO-3P(L) GT60M303 900 60 TO-3P(LH)
GT50M101 900 50 TO-3P(L) GT60M303 900 60 TO-3P(LH)
GT50Q101 1200 50 IH GT40T301 1500 40 TO-3P(LH)
GT50S101 1400 50 IH GT40T301 1500 40 TO-3P(LH)
GT50T101 1500 50 IH GT40T301 1500 40 TO-3P(LH)
Soft-switching GT60J101 600 60 TO-3P(L) GT80J101B 600 60 TO-3P(LH)
applications GT60J322 600 60 TO-3P(LH) GT60J321 600 60 TO-3P(LH)
GT60M101 900 60 TO-3P(L) GT60M303 900 60 TO-3P(LH)
GT60M102 900 60 TO-3P(L) GT60M303 900 60 TO-3P(LH)
GT60M103 900 60 TO-3P(L) GT60M303 900 60 TO-3P(LH)
GT60M104 900 60 TO-3P(L) GT60M303 900 60 TO-3P(LH)
GT60M105 900 60 TO-3P(L) GT60M303 900 60 TO-3P(LH)
GT60M301 900 60 TO-3P(LH) GT60M303 900 60 TO-3P(LH)
GT60M302 900 60 TO-3P(LH) GT60M303 900 60 TO-3P(LH)
GT60M305 900 60 TO-3P(LH) GT60M303 900 60 TO-3P(LH)
GT60M322 950 60 TO-3P(LH) GT60N321 1000 60 TO-3P(LH)
GT80J101B 600 80 TO-3P(LH)
GT80J101 600 80 TO-3P(L)
GT60J321 600 60 TO-3P(LH)
GT80J101A 600 80 TO-3P(LH) GT80J101B 600 80 TO-3P(LH)
GT8J101 600 8 TO-220NIS GT10J303 600 10 TO-220NIS
GT8J102 600 8 TO-220SM GT10J312 600 10 TO-220SM
GT8N101 1000 8 TO-3P(N) GT10Q101 1200 10 TO-3P(N)
GT8Q101 1200 8 TO-3P(N) GT10Q101 1200 10 TO-3P(N)
GT8Q102 1200 8 TO-220SM
GT10Q311 1200 10 TO-3P(SM)
GT15J101 600 15 TO-3P(N) GT20J101 600 20 TO-3P(N)
GT15J102 600 15 TO-220NIS GT15J301 600 15 TO-220NIS
GT15J103 600 15 TO-220SM GT15J311 600 15 TO-220SM
Hard-switching
GT15N101 1000 15 TO-3P(N) GT15Q102 1200 15 TO-3P(N)
applications
GT15Q101 1200 15 TO-3P(N) GT15Q102 1200 15 TO-3P(N)
GT15Q311 1200 15 TO-3P(SM)
GT20J311 600 20 TO-3P(SM)
GT25H101 500 25 TO-3P(N) GT30J101 600 30 TO-3P(N)
GT25J101 600 25 TO-3P(N) GT30J121 600 30 TO-3P(N)
GT25J102 600 25 TO-3P(N)IS GT30J121 600 30 TO-3P(N)
GT25Q101 1200 25 TO-3P(LH) GT25Q102 1200 25 TO-3P(LH)
GT30J311 600 30 TO-3P(SM)
GT50J101 600 50 TO-3P(L) GT50J121 600 50 TO-3P(LH)
GT5G101 400 130 (pulse) NPM GT5G103 400 130 (pulse) DP
GT5G102 400 130 (pulse) DP GT5G103 400 130 (pulse) DP
GT8G101 400 130 (pulse) NPM GT5G103 400 130 (pulse) DP
GT8G103 400 150 (pulse) DP
GT8G102 400 150 (pulse) NPM

GT10G101 400 130 (pulse) TO-220NIS GT25G101 400 170 (pulse) TO-220FL
Strobe flash GT10G102 400 130 (pulse) TO-220NIS GT25G102 400 150 (pulse) TO-220FL
applications GT15G101 400 170 (pulse) TO-220NIS GT25G101 400 170 (pulse) TO-220FL
GT20G101 400 130 (pulse) TO-220FL GT25G101 400 170 (pulse) TO-220FL
GT20G102 400 130 (pulse) TO-220FL GT8G103 400 150 (pulse) DP
GT25G102 400 150 (pulse) TO-220FL GT8G103 400 150 (pulse) DP
GT50G101 400 100 (pulse) TO-3P(N) GT25G101 400 170 (pulse) TO-220FL
GT50G102 400 100 (pulse) TO-3P(N) GT8G103 400 150 (pulse) DP
GT75G101 400 150 (pulse) TO-3P(N) GT25G101 400 170 (pulse) TO-220FL
Audio amp GT20D101 250 20 TO-3P(L)
applications GT20D201 250 20 TO-3P(L)

15
OVERSEAS SUBSIDIARIES AND AFFILIATES (As of February 23, 2006)
2007-3
Toshiba America Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd.
Electronic Components, Inc. Dsseldorf Head Office Hong Kong Head Office
Headquarters-Irvine, CA Hansaallee 181, D-40549 Dsseldorf, Level 11, Tower 2, Grand Century Place, No.193, BCE0010D
19900 MacArthur Boulevard, Germany Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Suite 400, Irvine, CA 92612, U.S.A. Tel: (0211)5296-0 Fax: (0211)5296-400 Tel: 2375-6111 Fax: 2375-0969
Tel: (949)623-2900 Fax: (949)474-1330
Mnchen Office Beijing Office
Boulder, CO (Denver) Bro Mnchen Hofmannstrasse 52, Room 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu,
3100 Araphahoe #500, D-81379, Mnchen, Germany Chao Yang District, Beijing, 100004, China
Boulder, CO 80303, U.S.A. Tel: (089)748595-0 Fax: (089)748595-42 Tel: (010)6590-8796 Fax: (010)6590-8791
Tel: (303)442-3801 Fax: (303)442-7216
France Branch Chengdu Office
Buffalo Grove (Chicago) Les Jardins du Golf 6 rue de Rome F-93561, Room 2508A, 2 Zongfu Street, Times Plaza,
2150 E. Lake Cook Road, Suite 310, Rosny-Sous-Bois, Cedex, France Chengdu 610016 Sichuan, China
Buffalo Grove, IL 60089, U.S.A. Tel: (1)48-12-48-12 Fax: (1)48-94-51-15 Tel: (028)8675-1773 Fax: (028)8675-1065
Tel: (847)484-2400 Fax: (847)541-7287 Italy Branch Qingdao Office
Duluth, GA (Atlanta) Centro Direzionale Colleoni, Room 4(D-E), 24F, International Financial Center,
3700 Crestwood Pkwy, #160, Palazzo Perseo 3, 59 Xiang Gang Zhong Road, Qingdao, Shandong, China
Duluth, GA 30096, U.S.A. I-20041 Agrate Brianza, (Milan), Italy Tel: (0532)579-3328 Fax: (0532)579-3329
Tel: (770)931-3363 Fax: (770)931-7602 Tel: (039)68701 Fax: (039)6870205
Toshiba Electronics Shenzhen Co., Ltd.
Portland, OR Spain Branch Room 2601-2609, 2616, Office Tower Shun Hing Square,
2560 NW 141st Place Portland, Parque Empresarial, San Fernando, Edificio Europa, Di Wang Commercial Center, 5002 Shennan Road East,
a
OR 97229, U.S.A. 1 Planta, E-28831 Madrid, Spain Shenzhen, 518008, China
Tel: (503)784-8879 Fax: (503)466-9729 Tel: (91)660-6798 Fax:(91)660-6799 Tel: (0755)2583-0810 Fax: (0755)8246-1581

Raleigh, NC U.K. Branch Toshiba Electronics (Shanghai) Co., Ltd.

3120 Highwoods Blvd., #108, Raleigh, Riverside Way, Camberley Surrey,
GU15 3YA, U.K. Shanghai Head Office
NC 27604, U.S.A. 11F, HSBC Tower, 1000 Lujiazui Ring Road,
Tel: (919)859-2800 Fax: (919)859-2898 Tel: (01276)69-4600 Fax: (01276)69-4800
Pudong New Area, Shanghai 200120, China
Richardson, TX (Dallas) Sweden Branch Tel: (021)6841-0666 Fax: (021)6841-5002
Gustavslundsvgen 18, 5th Floor,
777 East Campbell Rd., #650, Richardson, Hangzhou Office
S-167 15 Bromma, Sweden
TX 75081, U.S.A. 502 JiaHua International Business Center,
Tel: (08)704-0900 Fax: (08)80-8459
Tel: (972)480-0470 Fax: (972)235-4114 No.28 HangDa Road, Hangzhou, 310007, China
San Jose Engineering Center, CA Toshiba Electronics Asia Tel: (0571)8717-5004 Fax: (0571)8717-5013
2590 Orchard Parkway San Jose, (Singapore) Pte. Ltd. Nanjing Office
CA 95131, U.S.A. 438B Alexandra Road, #06-08/12 Alexandra
23F Shangmao Century Plaza,

Discrete IGBTs
Tel: (408)526-2400 Fax:(408)526-2410 Technopark, Singapore 119968
No.49 Zhong Shan South Road, Nanjing, 210005, China
Tel: (6278)5252 Fax: (6271)5155
Wakefield, MA (Boston) Tel: (025)8689-0070 Fax: (025)8689-0125
401 Edgewater Place, #360, Wakefield, Toshiba Electronics Service Toshiba Electronics (Dalian) Co., Ltd.
MA 01880-6229, U.S.A. (Thailand) Co., Ltd.
Tel: (781)224-0074 Fax: (781)224-1095 14/F, Senmao Building, 147, Zhongshan Road,
135 Moo 5, Bangkadi Industrial Park, Tivanon Road, Xigang Dist., Dalian, 116011, China
Wixom (Detroit) Pathumthani, 12000, Thailand Tel: (0411)8368-6882 Fax: (0411)8369-0822
48679 Alpha Drive, Suite 100, Wixom, Tel: (02)501-1635 Fax: (02)501-1638
MI 48393 U.S.A. Tsurong Xiamen Xiangyu Trading Co., Ltd.
Tel: (248)449-6165 Fax: (248)449-8430
Toshiba Electronics Trading 14G, International Bank BLDG., No.8 Lujiang Road,
(Malaysia) Sdn. Bhd. Xiamen, 361001, China
Toshiba Electronics do Brasil Ltda. Kuala Lumpur Head Office Tel: (0592)226-1398 Fax: (0592)226-1399
Rua Afonso Celso, 552-8 andar, CJ. 81
Suite W1203, Wisma Consplant, No.2, Toshiba Electronics Korea Corporation
Vila Mariana Cep 04119-002 Sao Paulo SP, Brasil
Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,
Tel: (011)5576-6619 Fax: (011)5576-6607
Selangor Darul Ehsan, Malaysia Seoul Head Office
Toshiba India Private Ltd. Tel: (03)5631-6311 Fax: (03)5631-6307 891, Samsung Life Insurance Daechi Tower 20F, Daechi-dong,
6F DR. Gopal Das Bhawan 28, Gangnam-gu, Seoul, 135-738, Korea
Penang Office Tel: (02)3484-4334 Fax: (02)3484-4302
Barakhamba Road, New Delhi, 110001, India Suite 13-1, 13th Floor, Menara Penang Garden,
Tel: (011)2331-8422 Fax: (011)2371-4603 42-A, Jalan Sultan Ahmad Shah, Gumi Office
10050 Penang, Malaysia 6F, Goodmorning Securities Building, 56 Songjung-dong,
Tel: (04)226-8523 Fax: (04)226-8515 Gumi-shi, Kyeongbuk, 730-090, Korea
Tel: (054)456-7613 Fax: (054)456-7617
Toshiba Electronics Philippines, Inc.
26th Floor, Citibank Tower, Valero Street, Makati, Toshiba Electronics Taiwan Corporation
Manila, Philippines
Tel: (02)750-5510 Fax: (02)750-5511 Taipei Head Office
17F, Union Enterprise Plaza Building, 109
Min Sheng East Road, Section 3, Taipei, 10544, Taiwan
Tel: (02)2514-9988 Fax: (02)2514-7892
Kaohsiung Office
16F-A, Chung-Cheng Building, 2, Chung-Cheng 3Road,
Kaohsiung, 80027, Taiwan
Tel: (07)237-0826 Fax: (07)236-0046

The information contained herein is subject to change without notice. 021023_D

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical
sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire
system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs,
please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions
and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. 021023_A
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a
malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customers own risk. 021023_B
The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and
regulations. 060106_Q
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of
the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. 070122_C
Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all
applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with
applicable laws and regulations. 060819_Z

2007
Previous edition: BCE0010C
2007-3(0.3k)PC-DQ

Semiconductor Company
Website: http://www.semicon.toshiba.co.jp/eng