TK8A65D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)

TK8A65D
Switching Regulator Applications
Unit: mm

Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.)

High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 650 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 650 V

Gate-source voltage VGSS 30 V
DC (Note 1) ID 8
Drain current A 1: Gate
Pulse (Note 1) IDP 32 2: Drain
Drain power dissipation (Tc = 25C) PD 45 W 3: Source

Single pulse avalanche energy

EAS 416 mJ
(Note 2)
JEDEC
Avalanche current IAR 8 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEITA SC-67

Channel temperature Tch 150 C TOSHIBA 2-10U1B

Storage temperature range Tstg 55 to 150 C Weight: 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 2.78 C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W

1
Note 1: Ensure that the channel temperature does not exceed 150C.

Note 2: VDD = 90 V, Tch = 25C (initial), L = 11.5 mH, RG = 25 , IAR = 8 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

3
This transistor is an electrostatic-sensitive device. Handle with care.

Start of commercial production

2009-01
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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 30 V, VDS = 0 V 1 A

Drain cut-off current IDSS VDS = 650 V, VGS = 0 V 10 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 650 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 4 A 0.7 0.84
Forward transfer admittance |Yfs| VDS = 10 V, ID = 4 A 1.3 4.5 S
Input capacitance Ciss 1350
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 6 pF

Output capacitance Coss 135

Rise time tr 10 V ID = 4 A VOUT 22

VGS
0V
Turn-on time ton 55
RL = 50
Switching time 50 ns
Fall time tf 15
VDD 200 V
Turn-off time toff 100
Duty 1%, tw = 10 s
Total gate charge Qg 25
Gate-source charge Qgs VDD 400 V, VGS = 10 V, ID = 8 A 16 nC

Gate-drain charge Qgd 9

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR 8 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP 32 A
Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V 1.7 V
Reverse recovery time trr IDR = 8 A, VGS = 0 V, 1300 ns
Reverse recovery charge Qrr dIDR/dt = 100 A/s 12 C

Marking

Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

Part No. environmental matters such as the RoHS compatibility of Product.
(or abbreviation code) The RoHS is Directive 2011/65/EU of the European Parliament and
K8A65D
Lot No. of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
Note 4

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 TK8A65D

ID VDS ID VDS
10 20
COMMON SOURCE 10 10 COMMON SOURCE
8 9
Tc = 25C Tc = 25C
PULSE TEST 8 PULSE TEST
(A)

(A)
8 16
DRAIN CURRENT ID

DRAIN CURRENT ID
6.75
7.5
6 12
6.5

7
6.25
4 8
6
6.5

2 5.5 4 6

VGS = 5 V
VGS = 5 V
0 0
0 2 4 6 8 10 0 10 20 30 40 50

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID VGS VDS VGS

20 10
VDS (V)

COMMON SOURCE COMMON SOURCE

VDS = 20 V Tc = 25C
PULSE TEST PULSE TEST
(A)

16 8
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

8
12 6

8 4

25 4

4 100
2 ID = 2 A
Tc = 55C

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

Yfs ID RDS (ON) ID

100 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE

VDS = 10 V Tc = 25C
PULSE TEST PULSE TEST

10
RDS (ON) ()

Tc = 55C
Yfs (S)

25 1
100 VGS = 10, 15 V

0.1 0.1
0.1 1 10 100 0.1 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) Tc IDR VDS

3 100
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

VGS = 10 V Tc = 25C

DRAIN REVERSE CURRENT

2.5 PULSE TEST PULSE TEST

2 10
RDS (ON) ( )

IDR (A)
8
1.5 4

1 1
ID = 2 A

0.5 10
5
1 VGS = 0, 1 V
3
0 0.1
80 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE VDS Vth Tc

10000 5
GATE THRESHOLD VOLTAGE

Ciss
(pF)

4
1000
C

3
Vth (V)

Coss
CAPACITANCE

100

10 Crss COMMON SOURCE

COMMON SOURCE 1 VDS = 10 V
VGS = 0 V ID = 1 mA
f = 1 MHz PULSE TEST
Tc = 25C
1 0
0.1 1 10 100 80 40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C)

DYNAMIC INPUT / OUTPUT

PD Tc CHARACTERISTICS
80 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VDS
VGS

400 16
60 200
DRAIN-SOURCE VOLTAGE

GATE-SOURCE VOLTAGE

300 VDD = 100 V 12

PD (W)

400
40

200 8
COMMON SOURCE
ID = 8 A
20 VGS
Tc = 25C
100 4
PULSE TEST

0 0 0
0 40 80 120 160 200 0 10 20 30 40

CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC)

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rth tw
10

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)
1 Duty = 0.5

0.2

0.1
0.1
0.05
PDM
0.02
SINGLE PULSE t
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 2.78 C/W
0.001
10 100 1m 10 m 100 m 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS Tch

100 500

ID max (pulsed) *

100 s * 400
AVALANCHE ENERGY

10 ID max (continuous)
(A)

1 ms *
EAS (mJ)

300
ID

1
DC operation
DRAIN CURRENT

200
Tc = 25C

100
0.1

0
*: SINGLE NONREPETITIVE 25 50 75 100 125 150
0.01 PULSE Tc = 25C
CURVES MUST BE CHANNEL TEMPERATURE (INITIAL)
DERATED LINEARLY WITH Tch(C)
INCREASE IN VDSS max
TEMPERATURE.
0.001 BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
15 V
VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 11.5 mH 2 B V
VDSS DD

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RESTRICTIONS ON PRODUCT USE

Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
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applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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