Appendix L
Appendix L
Appendix L
CHAPTER 1
1.64 1025 V/V or 60.2 dB, 2500 A/A or 68 dB, 2.63 106 W/W or 64.2 dB
1.68 4 MHz
1.70 64 nF
1.73 0.51/CR
1.75 0.8 k, 8.65 k, connect 2 nF to node B.
1.78 159 kHz; 14.5 Hz; 159 kHz
1.81 10 Hz, 10 kHz, 0.04 dB, 0.04 dB, 10 Hz, 10 kHz
CHAPTER 2
2.53 (a) 10 mV, 10 A, 10 A; (b) 10 V, 10 mA, 0; from the power supply of the op amp
2.58 (a) 0.83 V/V, 17%; (c) 0.98 V/V, 2%; (e) 9 V/V, 10%
2.60 20 V/V, 10 k, 0.0095 V/V, 66.4 dB
2.64 R1 = R3 , R2 = R4
2.65 0.02x V/V; 0.002 V/V, 54 dB; 0.02 V/V, 34 dB; 0.1 V/V, 20 dB
2.67 1 k, 1 M, 1 k, 1 M; 1% tolerances
2.69 R = 1 M, R5 = 756 , R6 = 6.8 k
2.73 (a) 0.12 V to +0.12 V; (b) 12 V to +12 V
2.75 Ideal: 21 V/V, 0, ; 1% resistors: Ad = 21 4%, | Acm |= 0.02, CMRR = 60.4 dB
2.77 (a) vB /vA = 3 V/V, vC /vA = 3 V/V; (b) 6 V/V; (c) 56 V pp, 19.8 V rms
2.79 (a) 1591 Hz; (b) leads by 90 ; (c) increases by a factor of 10; (d) the same as in (b)
2.81 1 MHz; 0.159 s
2.83 R = 10 k, C = 159 pF; RF = 1 M, 1 kHz; (a) vO decreases linearly to 6.3 V,
t/159
(b) vO decreases exponentially, vO (t) = 100(1 e ), reaching 6.1 V at the
end of the pulse.
2.86 R1 = 10 k, R2 = 1 M, C = 0.16 nF; 100 kHz
2.88 15.9 kHz, vO = 5 sin (106 t + 90 ) V
2.90 Square wave of the same frequency, 8 V peak amplitude, average is 0 V; 30 k
2.92 R1 = 1 k, R2 = 100 k, C = 79 nF; 20 Hz
2.94 4 mV
2.96 9 mV; 12 mV
2.98 (a) 0.53 A, into the input terminals; (b) 3 mV; (c) 60 nA
2.100 R1 = 1.01 k, R2 = R3 = 100 k, C1 = 1.58 F, C2 = 0.16 F
2.102 6 V; 3 V; 9 mV
2.104 (a) 0.2 V; (b) 0.4 V; (c) 10 k, 20 mV; (d) 0.22 V
2.106 (a) 9.9 k; (b) 0.222 V
2.108 80,000 V/V, 125 Hz, 10 MHz
2.111 19.61 kHz, 49.75 V/V, 4.975 V/V
2.113 (a) 5.1 MHz; (c) 10 MHz; (e) 10.1 MHz; (g) 2 MHz
2.116 36.6 MHz
2.118 500 MHz; 3; 7 MHz; 3.6 MHz
2.121 100 mV
2.125 1 MHz, 3.18 V
CHAPTER 3
3
3.1 55 C: 2.68 10 cm , one out of every 1.9 10 silicon atoms; +75 C:
6 16
3
3.70 10 cm , N/ni = 1.4 10
11 11
CHAPTER 4
CHAPTER 5
2
5.19 5 mA/V ; 0.6 V
5.21 0.5 V; 20; 145 A; 1.5 V, 1.125 mA
5.23 2.5 k to 125 ; (a) 5 k to 250 ; (b) 1.25 k to 62.5 ; (c) 2.5 k to 125 .
5.29 (a) 3%; (b) 5%
5.31 200 k, 20 k; 5%, 5%
5.33 104 A; 4%; double L to 3 m
5.35 Increases by a factor of 16.
5.38 350 A; 750 A; 864 A; 880 A; 960 A
5.41 At 3.0 V, transistor is cut off; at 2.5 V, transistor enters saturation region; at 0.5 V,
transistor enters triode region.
5.43 1 V, 0 V, 1 V, 0.25 V; 5 k, 5 k, 5 k, 5 k; 10 k, 2 V; 10 k, 1 V; 10 k,
2 V; 10 k, 0.75 V
5.45 0.08 mA; 10 k, 5 k; 17.5 k
5.48 4 k
5.50 4 m, 11.1 m; 1.4 k
5.52 0.45 mA, +7.3 V; quite tolerant.
5.54 44.4; 1.25 k
5.56 1 V, 1.43 V, 2.8 V, 1 V, 2.8 V, +1 V, 2.8 V, 1 V
5.59 I1 = 405 A, V2 = 1.5 V; I3 = 217 A, V4 = 1.232 V; V5 = 1.5 V, I6 = 405 A
5.61 (a) 0.5 V, 0.5 V, 0.983 V; (b) 0.1 V, 0.9 V, 1.01 V
5.63 1.24 V
5.65 triode, 0.59 mA; triode, 5 mA; saturation, 9 mA; saturation, 9 mA
CHAPTER 6
CHAPTER 7
7.18 3 mA; 120 V/V; +5 mV: exp. 660 mV, linear 600 mV;
5 mV: exp. +540 mV, linear +600 mV.
7.25 (a) 0.1 mA, 0.8 V; (b) 1 mA/V; (c) 10 V/V; (d) 100 k, 9.1 V/V
7.26 0.5 mA/V; 0.067 mA, 0.27 V; 9.14; 0.67 V
7.29 16 m; 0.75 V
7.31 18.2 V/V; 1.207 V, 23.6 V/V
7.33 (b) 2 mA/V, 200 k; (d) 3.33 M, 0.94 V/V, 15.38 V/V, 14.5 V/V
7.35 2.5 V; 0.611 mA, 1.95 V; 5 mV; 0.55 V; 110 V/V; 100 V/V
7.37 40 mA/V; 25 ; 2.5 k; 1 V
7.39 1.04 k to 4.7 k
7.42 (a) 1.000, , 1.00 mA, 1.00 mA, 0 mA, 40 mA/V, 25 , ; (c) 0.980, 50, 1.00 mA,
1.02 mA, 0.02 mA, 40 mA/V, 24.5 , 1.25 k; (e) 0.990, 100, 0.248 mA, 0.25 mA,
0.002 mA, 9.92 mA/V, 100 , 10.1 k
7.48 1 V; 125 ; 80 V/V
7.53 Rin = 75 ; vo /vsig = 39.6 V/V
7.55 1000 V/V; 5000 V/V
7.57 8.6 k, 7.7 k; 77 V/V
7.59 79.4 V/V; 4762 A/A
7.64 10 V/V
7.66 1 mA/V; 125 A; 7.5 V/V
7.68 5 k, 10 k, 200 V/V; 100 V/V, 33.3 V/V; 15 mV, 0.5 V
7.70 (b) 1250 V/V
7.72 0.5 k
7.74 30.3 k, 40 V/V, 12 k; 20 V/V, 15 V/V; 6.65 mV, 100 mV
7.76 80 V/V, 44.4 V/V to 109.1 V/V; Re = 275 , 25 V/V, 20 V/V to 27.3 V/V
7.78 2.5 mA/V; 0.2 V
7.80 isig RC
7.82 0.357 k; 1.6 mA; 1.13 V
7.84 1.25 mA; 1.5 mA, 1.0 mA; 0.5 V/V; 1 V
7.86 149 , 0.87 V/V; 116 to 246 ; 0.80 V/V to 0.90 V/V
7.89 91 V/V
7.91 27.5 V/V, 41.2 V/V, 55.6 V/V, 57.1 V/V, 55.6 V/V; 0.325 mA
7.92 18 M, 22 M, 3 k, 3 k; 2 V
7.94 5.07 V, 1.27 mA to 2.48 mA; 620 ; 0.91 mA to 1.5 mA
CHAPTER 8
8.14 Both cases: 0.7 V, +2 V, +0.7 V, 0.7 V, 1.7 V; (a) I = 0.4 mA;
(b) I = 0.04 mA
8.17 700 , 5 A/A, 10 k.
8.19 vo = gm1 vi (W3 /W2 )RL ; gm1 RL (W3 /W2 ); 1/gm2 ; gm1 /gm2
8.21 (a) 1.6 k; (b) 250
8.25 I = 10 A: 0.4 mA/V, 250 k, 1 M, 400 V/V; I = 100 A: 4 mA/V, 25 k, 100 k,
400 V/V; I = 1 mA: 40 mA/V, 2.5 k, 10 k, 400 V/V
8.27 50 V/V; 0.2 mA; 12.5 m
8.29 0.4 m; 25; 0.2 mA
8.31 0.5 mA; 4 mA/V
8.33 1 mA/V; 15 k; 15 V/V; 3.9 m
8.35 0.144 mA
8.37 (a) 80 A/V, 0.18 M, 14.4 V/V; (b) 0.79 V, 0.253 mA/V, 18 k, 4.55 V/V;
(c) 0.8 mA/V, 18 k, 14.4 V; (d) 0.08 V, 0.253 mA/V, 180 k, 45.5 V/V;
(e) lowest A0 : first design when operated at ID = 100 A, A0 = 4.55 V/V, highest
A0 : second design when operated at ID = 10 A, A0 = 45.5 V/V; gain increases by a
factor 10.
8.39 0.5 m; 12.5
8.41 1.05 V; 2 m; 8; 32
8.43 (a) 0.95 V, 0.475 A, 2.375 V; (b) 86.5 V/V, 1.9 V, 22 mV; (c) 33.7 k
8.45 0.913 V; 1.07 V
8.47 (a) 25 A; (b) 0.33 V and 2.98 V; (c) 189.3 V/V; (d)195.8 V/V; (e) 210.6 V/V
8.49 (a) 0.25 mA; (b) 120 k, 120 k, 60 k; (c) 5 k, 10 mA/V; (d) 5 k, 600 V/V,
60 k
8.51 980 ; 61 k; 10.1 V/V
8.53 2 k; 1.1 V
8.55 (a) 100 A, 1.03 V; (b) 0.9 mA/V, 200 k; (c) 2.2 k; (d) 209 k; (e) 90.9 V/V,
89 V/V; (f) 32 mV
8.57 ro
8.59 0.99 (or more exactly, 0.975); 14.8 M
8.61 (a) 208 ; (b) 500 ; (c) 4.8 k; 101 with Re =
8.63 (a) 50, 1.6 M; (b) 250, 320 k
8.65 0.5 m; 20; 1 V; 0.25 mA; 0.5 V
8.67 0.6 m; 0.125 mA; (W/L)1,2 = 10; (W/L)3,4 = 40
8.69 gm2 ro2
2
Q5 whose EBJ areas are in the ratio 1:2:4; currents realized are 0.0999 mA, 0.1999 mA
and 0.3997 mA.
8.88 (a) 0.3 V, 0.8 V; (b) 8 A, 172 A; (c) 180 A; (d) 1.1 V; (e) 12 M; (f) 0.08 A,
0.04%
8.90 (a) RE = 2.88 k; (b) 8.2 M, 0.7 A
8.92 (a) 58.5 k; (b) 79.9 M,
8.95 360 A; 2.4 mA/V; 0.48 mA/V; 27.8 k; 0.81 V/V; 339 ; 0.7 V/V
8.97 (b) gm1 = 0.632 mA/V, gm2 = 40 mA/V, r2 = 5 k; (c) 19.5 V/V; (d) 487 k,
9.6 V/V; (e) 10 M, 18.6 V/V
8.99 50.2 V/V
CHAPTER 9
9.1 (a) 0.2 V, 0.6 V; (b) 0.6 V, 0.08 mA, 0.08 mA, +0.6 V, +0.6 V; (c) 0.2 V,
0.08 mA, 0.08 mA, +0.6 V, +0.6 V; (d) 0.7 V, 0.08 mA, 0.08 mA,
+0.6 V, +0.6 V; (e) 1.0 V; (f) 0.8 V, 0.2 V
9.3 (a) 0 V, 0.6 V, 0.6 V, 0.6 V, 0 V; (b) 0.104 V, 0.541 V, 0.4 V, 0.8 V, 0.4 V;
(c) 0.283 V, 0.4 V, +0.2 V, 1 V, 0.8 V; (d) 0.104 V, 0.645 V, +0.8 V, +0.4 V,
0.4 V; (e) 0.283 V, 0.683 V, +1 V, +0.2 V, 0.8 V
9.5 0.587 V; 0.587 V; 0.612 V; 0.025 V; 0.10 V, 4 V/V; 0.025 V
9.7 0.35 V; 16.3; 1.14 mA/V
9.9 0.212 V; 554.5 A
9.11 (a) 0.1 VOV ; (b) 0, 0.338 VOV , 0.05 VOV , 0.005 VOV , 1.072 VOV
9.13 0.25 V; 0.5 mA; 5 k; 40
9.15 0.5 mA; 3.6 k; 38.6
9.17 I = 2ID ; Pdiff = 2PCS
1
9.19 (a) gm1,2 ro3,4 ro1,2 ; (b) [n (W/L)1,2 ]/[p (W/L)3,4 ]; (c) 25
gm3,4
9.23 8 k; W/L, ID (mA) and | VGS | (V) are: Q1 (50, 0.1, 0.7), Q2 (50, 0.1, 0.7),
Q3 (100, 0.2, 0.7), Q4 (20, 0.1, 0.7), Q5 (20, 0.1, 0.7), Q6 (100, 0.2, 0.7), Q7 (40, 0.2, 0.7)
9.25 0.632 m; 0.28 mA
9.27 vB1 = +0.5 V: 0.177 V, +0.52 V, 2.5 V; vB1 = 0.5 V: 0.677 V, +2.5 V,
+0.52 V
9.30 (a) 0.574 V, 0.4 V, 0.4 V; (b) 0.326 V to 0.674 V; (c) 5 mV
9.32 (a) VCC (I/2)RC ; (b) 2 V; (c) 0.4 mA, 5 k
9.34 RC = 5.05 k, +1.6 V
9.36 0.5 mA, 1.0 mA; 17.3 mV
9.38 8 mA/V; 40 k
9.40 5 mV; 250 ; 40 V/V; 200 mV; 400 mV
9.42 Each emitter has a resistance Re = 450 , RC = 10 k; I = 1 mA; Possible value of
VCC = 10 V
9.49 12 V/V
9.51 16 V/V
9.53 25 V/V; 101 k
9.55 7.7 V/V; 5 104 V/V; 1.54 104 or 83.8 dB
9.57 (a) 2.332 V; (b) 5.06 k; (c) 2.47 V; (d) 1.92 V/V; (e) 0.287 V
9.59 4 m
9.61 (a) 20 V/V; (b) 0.23 V/V; (c) 86.5 or 38.7 dB; (d) 0.023 sin 2 60t +
0.2 sin 2 1000t, volts
9.63 (a) 100 V/V; (b) 50 k; (c) 2.5 104 V/V; (d) 4 105 or 112 dB; (e) 25 M
9.65 (a) 50 V/V; (b) 2.5 103 V/V, 2 104 or 86 dB; (c) 5 105 V/V, 106 or 120 dB
9.67 (a) Two emitter resistances and a single bias-current source I; Re = 25 ; RC = 10 k;
VCC = +15 V; REE = 50 k; VA = 100 V; 2.4 M
9.69 2/3 in one transistor and 1/3 in the other; 0.008 V/V
9.72 11 mV; variability of Vt ; 7.33%
9.74 2.5 mV
9.77 0.25 mV
9.79 1.25 mV
9.81 (a) x = 0.3 k; (b) x = 0.225 k
9.83 2I/3 and I/3; IRC /3; 18.75 mV; 17.3 mV
9.85 20 k; 40 V/V
9.87 1.4 mA/V; 25 k; 25 k; 17.5 V/V
9.89 3 V
9.92 1 mA/V; 75 k; 75 V/V; 75 k
9.94 20 k; 20 k; 10 mA/V; 200 V/V; 100 V/V
9.96 2VT /P2 ; 20 V
9.98 2.67 104 V/V
I/2
9.100 , a reduction by a factor of (/2); Rid increases by a factor (/3)
+1 2
9.102 1.13 mA/V; 75 k; 85 V/V
9.105 1 mA/V; 25 k; 25 V/V; 25 k, 0.02 mA/V; 0.98 k; 0.98 A/A; 50 k; 2600 k;
0.0196 V/V; 1274 or 62.1 dB
9.107 0.1
9.110 8 mA/V; 100 k; 800 V/V; 37.5 k; 100 k; 0.013 V/V; 60,000 or 96 dB;
444.4 V/V
9.112 (a) 83.3 k; (b) 1200 V/V; (c) 21 106 or 146 dB
9.114 (a) W/L: 12.5, 12.5, 50, 50, 25, 100, 25, 25, 0 V; (b) 0.1 V to +0.7 V; (c) 0.7 V
to +0.7 V; (d) 900 V/V
9.116 108 A; 909 mV; 0.86 mV
9.118 (a) W/L: 32.9, 32.9, 178, 178, 65.8, 356, 65.8, 32.9; (b) 0.65 V to 1.05 V; (c) 0.15 V
to 1.05 V; 144 V/V
9.120 25 V/V; 20 k; 5000 A/A
9.122 R5 ; 7.37 k; reduced to about half its original value; change R4 to 1.085 k, this will
slightly reduce A2 .
9.124 (a) 0.52 mA, 1.04 mA, 2.1 mA, 0 V; (b) 4 k, 65.5 ; (e) 8770 V/V
CHAPTER 10
10.1 20 nf
10.3 10 F; 88.4 Hz; 8.84 Hz
10.5 (a) 10 k; (b) 3.53 F; (c) 10 Hz; (d) 100 Hz; (e) dc gain = 2, makes perfect sense
since CS behaves as an open-circuit at dc.
10.7 5 F; 0.5 F; 0.5 F; 92.2 Hz; 6 F
10.10 141.4
10.13 gm = 1.3 mA/V; gmb = 0.25 mA/V; ro = 100 k; Cgs = 61.6 fF; Cgd = 4.3 fF;
Csb = 12.8 fF; Cdb = 9.4 fF; fT = 3.1 GHz
10.17 L = Lmin : 6.5 V/V, 113 GHz; 2Lmin : 13 V/V, 28.3 GHz; 3Lmin : 19.5 V/V, 12.6 GHz;
4Lmin : 26 V/V, 7.1 GHz; 5Lmin : 32.5 V/V, 4.5 GHz
CHAPTER 11
11.41 (b) 10 V/V; (c) 0.2 V, 1.1 V, 0.2 V, 0.9 V; (d) 35.3 V/V, 50 V/V, 0.935 V/V,
1650 V/V; (e) 0.1 V/V; (f) 9.94 V/V, 0.6%; (g) 5.6
11.44 (c) 1.2 k; (d) 1.42 k, 628 ; (e) 23.8 V/V; (f) 145 k, 0.53
11.46 100 ; 9.94 mA/V
11.48 (c) 0.999 k
11.50 (a) 0.135 V/V; (b) 7.4 V/V; (c) 0.14
11.53 (a) 200 ; (b) 1418.4 mA/V; (c) 283.7, 284.7; (d) 4.982 mA/V, very close;
(e) 28.2 k, 8 M
11.56 9.56 mA/V; 503.4 k
11.58 (a) 0 V, +0.6 V, +0.6 V; (b) 0.1 mA/V; (c) 0.099 mA/V; (d) 203 M;
(e) 0.99 V/V; 1.25
11.60 9.88 k, 11.1 , 1.1 compared to 9.99 k, 1.11 , 0.11 .
11.62 3.23; 0.1 mA/V; 32.3 k; 7.63 k; due to the approximation used in the
systematic analysis method.
11.64 (a) RF /Rs , 20 k; (b) 9.88 V/V, 21.7 , 22.1 ; (c) 82.18 kHz
11.66 159, larger by about 2.5%, a result of the approximations involved in the general
method. The more accurate value is the one obtained here.
11.68 10 k; 9.52 k; 11.9 ; 244
11.70 (b) 98.8 V/V; 7.2 ; 10.3
11.72 0.53 k; 10.5 ; 526
11.74 (d) 99.8 A/A, 0.1 A/A, 9.98, 9.1 A/A, 0.2 k, 18.2 ; (e) 328.4 k
11.76 970.9, 9709 A/A, 9.99 A/A; A and A differ slightly from the results in Example
11.10; however, Af is identical.
11.81 IC1 = 0.1 mA, IC2 = 10 mA; Vo /Vs = 3.62 V/V; Rin = 176.7
11.83 20 krad/s; 4 103 V/V; 250 V/V
11.85 8 104
11.87 10 V/V; 10 Hz; 1 MHz; by the amount-of-feedback 10 .
5 4
11.89 (a) 2.025 104 , 5.5 104 Hz; (b) 3306 V/V, 1653 V/V; (c) 0.5;
(d) (5.5 j 13.25) 10 Hz, 1.325
4
CHAPTER 12
12.57 16 V; 2.7 W; 13 V p p
12.59 30 k, 40 k
12.62 +3 V; 3 V
12.64 (c) 8 , 5 A, 50 W; (d) 6 , 5 A, 37.5 W; (e) 3 , 5A, 18.75 W
12.66 12.5 C/W; 8 W; 112.5 C
12.68 (a) 37.5 C/W; (b) 1.33 W; (c) 62.5 C
12.70 72 C; 1.5 C/W; 4 cm
CHAPTER 13
13.9 (a) 1.59 pF; (b) fP1 = ft /A0 , fP2 = 318 MHz, fZ = 200 MHz; (c) 46 ; (d) 500 , 72.5 ;
(e) 722
13.11 125.6 V/s; 0.8 pF
13.13 (a) 2 pF; (b) 1.51 pF
13.15 (a) 0.16 V; (b) 2 pF; (c) 78.1
13.17 (b) 0.45 m
13.19 250 A; 400 A; 200 A; 50 A
13.21 25, 25, 25, 25, 6.25, 6.25, 6.25, 6.25, 125, 125, 50
13.23 100 A; 150 A; 15.92 MHz; 54.7 ; 6.58 MHz; CL = 24.2 pF; 4.13 V/s
13.25 0.12 V; IB = I = 150 A; 15 V/s; W/L : 26, 26, 65, 65, 26, 26, 26, 26, 130, 130, 52
13.28 (a) 0.25 V to +1.3 V; (b) 1.3 V to +0.25 V; (c) 0.25 V to +0.25 V;
(d) 1.3 V to +1.3 V
13.30 Cp = 0.176 CL
13.33 VEB = 625 mV; A device: 7.3 mA/V, 137 , 6.85 k, 278 k; B device: 21.9 mA/V,
46 , 2.28 k, 90.9 k
2
1 1 1 1
13.35 I3 = I1 + + ; 0.1 mA
k1 k2 k3 k4
13.37 603 mV; 518 mV; 8.5 k
13.39 4.75 A; R4 = 1.94 k
13.41 14 A
13.43 53.3 nA; 20.1 nA
13.45 3 V to +4.8 V
13.47 6.4 k; 270 A
13.49 1.68 mA; 50.4 mW
13.51 4.63 k
13.53 10 mV
13.55 0.691 A; 3.6 mV
13.57 R = 18.2 k; 15.55 M
13.60 3.1 M, 9.38 mA/V
13.62 3.6 V to +4.2 V
13.64 14.4
13.66 20.2 mA; double the value of R7
13.68 5.67 MHz
13.70 180 Hz; 0.7 pF
13.73 159.2 kHz; 108 rad/s or 15.9 MHz
13.75 (a) 0.05 mA, 0.05 mA, 0.05 mA, 0.05 mA, 1 mA, 1 mA, 1 mA; (b) 100 k;
(c) 5 104 V/V or 94 dB; (d) 63.7 pF
13.77 Q5 : Q1 = 1; Q6 : Q1 = 4; 3.47 k; 3 M and 7 M
13.79 (a) 0.1 V to 2.2 V; (b) 0.8 V to 2.9 V
13.81 12.5 k; 0.8 V to 3.35 V; 100 k; 10 A, 50 k
13.83 36.9/I; 1240 V/V; 1240(IRL )/(IRL + 36.9); 5.1 A, 11.8 A
13.85 (a) 0.1 V to 2.9 V; (b) 20 k; (c) 0.2 ; (d) 12.3 mA, 0.3 mA, 1.6 k; (e) 0.3 mA,
12.3 mA, 2.4 k
13.88 10.6 A; 0.3 mA
CHAPTER 14
14.22 VIL = 0.776 V, VIH = 0.816 V; NMH = 1.184 V; NML = 0.776 V; 50 V/V
14.24 VDD = 1.2 V, RD = 38.3 k, W/L = 1.5; 0 W, 36 W
14.26 VDD = 1.2 V, RD = 23 k, W/L = 2.5; 0.435 V, 0.6 V, 0.7 V, 0.385 V, 0.5 V
14.29 6.84
14.31 (a) 244 nm, 22,181 nm2 ; (b) 1 V, 0 V, 0.5375 V, 0.4625 V, 0.4625 V, 0.4625 V
(c) both equal; 2.18 k
14.33 1.82
14.35 40.1
14.37 (a) 0.78 m, 0.127 m2 ; (b) 1.3 V, 0 V, 0.7125 V, 0.5875 V, 0.59 V, 0.59 V,
0.0625 V, 1.24 V, 0.53 V, 0.53 V; (c) 1.48 k, 1.48 k; (d) 5.8 V/V, 0.762 V,
0.538 V, 0.224 V; (e) 0.57 V, 0.08 V, 60%; (f) 0.61 V, 0.04 V, 40%
14.39 (a) vO (t) = 10 et/ ; (b) 69 ns, 220 ns
14.41 69 ps, 35 ps, 52 ps
14.43 (a) 1.2 ns, 0.6 ns; (b) 1 pF; (c) Cout = 0.6 pF, Cload = 0.4 pF
14.45 30 ps, 60 ps, 45 ps
14.47 57.5 ps, 69 ps, 63.3 ps
14.49 (W/L)n 1.725, (W/L)p 4.14
14.51 34.4 ps, 42.6 ps, 38.5 ps; 13 GHz
14.53 36.3 ps, 36.3 ps, 36.3 ps; 9.35 fF
14.55 (c) 14.66 103 (2Cn + Cw ); (d) 8.625 103 (3.4Cn + Cw ) (e) (i) In both cases,
tP = 29.32 10 Cn , thus when C is entirely intrinsic, scaling does not affect tP ;
3
(ii) For Wp = Wn , tP = 14.66 103 Cw , and for Wp = 2.4Wn , tP = 8.625 103 Cw , thus
using a matched design reduces tP only when C is dominated by external capacitance.
14.60 (a) 2.65 V; (b) 2.24 V
14.63 32.4 fJ; 64.8 W; 36 A
14.65 0.36 pF
14.67 32 pJ
14.69 (a) tP and the maximum operating frequency remain unchanged, PDP is reduced by
a factor of 0.52; (b) tP increases by a factor (1/0.72) and the maximum operating
frequency is reduced by the factor of 0.72. The PDP decreases by a factor of 0.72.
CHAPTER 15
CHAPTER 16
16.1 A(0 V, 0 V), B(2.5 V, 2.5 V), C(5 V, 5 V); 25 V/V; 0.2 V
16.4 (W/L)1,3 = 0.13 m/0.13 m, (W/L)2,4 = 0.52 m/0.13 m, (W/L)5,8 =
0.26 m/0.13 m
16.6 (W/L)5,6 = 3.83, higher than the values without velocity saturation to compensate for
the current reduction resulting from velocity saturation.
16.7 0.4 m/0.13 m; 65 ps
16.11 4,294,967,296
16.13 16
16.15 57%
16.17 (W/L)a 4.5
16.19 4.5; (i) 0.23 V, 121.8 A; (ii) 0.34 V, 158.7 A; (iii) 0.4 V, 180 A
16.22 1.75, greater than the value without velocity saturation because of the current
reduction due to velocity saturation.
16.24 (a) 3; (b) 4.93 ns; (c) 3.33 ns
16.26 3
16.29 L = 0.13 m, (W/L)n = (W/L)p = (W/L)a = 1
16.31 128 Mbits
16.33 0.5 pA
16.35 0.4 mA/V; 353 mV; 130 mV; 100% (doubling); 4 ns
16.37 (W/L)n = 3.33, (W/L)p = 13.32; 1.44 ns; 2 ns
16.39 (a) 0.4 V; (b) 0.1 V, 0.3 V; (c) 132 A; (d) (W/L)1,2 = 26.4, (W/L)3,4 = 6.6,
(W/L)5 = 52.8
16.41 10; 1024; 10,240; 1024; 12,288
16.43 40 MHz, 48%
16.45 4
16.48 (a) 2.4 ns; (b) 22 ns, 3.16 V; (c) 1.9 ns
CHAPTER 17
17.2 (a) 0.995 V, 5.7 ; (b) 0.707 V, 45 ; (c) 0.1 V, 84.3 ; (d) 0.01 V, 89.4
17.4 1 V/V; 0.977 V/V; 0.001 V/V
17.6 0.97 dB; 14.15 dB
17.10 (a) LP: T (s) = 1020 /(s + 104 )(s2 + 0.618 104 s + 108 )(s2 + 1.618 104 s + 108 )
(b) HP: T (s) = s /(s + 10 )(s + 0.618 10 s + 10 )(s + 1.618 10 s + 10 );
5 4 2 4 8 2 4 8
17.24 (a) N = 10, 4 dB; (b) Normalized to p = 2 3.4 10 rad/s, the poles are:
4
Q Q
17.51 R1 = R2 = R3 = 10 k; (a) C4 = 0.15 F; (b) C4 = 15 nF; (c) C4 = 1.5 nF
17.55 First-order section (Fig. 17.13a): R1 = R2 = 100 k, C = 10 nF; Second-order section
(Fig. 17.22a): C4 = C6 = 10 nF, R1 = R2 = R3 = R5 = 100 k, R6 = 161.8 k, K = 1;
Second-order section (Fig. 17.22a): C4 = C6 = 10 nF, R1 = R2 = R3 = R5 = 100 k,
R6 = 61.8 k, K = 1
17.57 C4 = C6 = 1 nF, R1 = R2 = R3 = R5 = 79.6 k, R6 = 159.2 k, r1 = r2 = 10 k
17.60 (b) First-order section: C = 1 nF, R1 = R2 = 13.71 k, Second-order LPN section:
R1 = R2 = R3 = R5 = 9.76 k, C61 = 618 pF, C62 = 382 pF, R6 = 35.9 k, K = 1
17.62 (b) C = 1 nF, R = 10 k, R1 = 10 k, Rf = 10 k, R2 = 10 k, R3 = 70 k,
RL = RH = 10 k, RB = 40 k, RF = 57.1 k
17.64 1%
17.67 (b) First-order section: C = 1 nF, R1 = R2 = 13.71 k, Second-order LPN section:
C = 1 nF, R = 9.76 k, Rd = 35.9 k, r = 10 k, C1 = 618 pF, R1 = R3 = ,
R2 = 9.76 k
17.71 0 = 6/CR, Q = 3, Center-frequency gain= 18 V/V.
17.73 (a) Q2 ; (b) 2Q2
17.75 (b) Second-order section [Fig. 17.34(c)]: R1 = R2 = 10 k, C3 = 492 pF, C4 = 5.15 nF;
Second-order section [Fig. 17.34(c)]: R1 = R2 = 10 k, C3 = 1.29 nF, C4 = 1.97 nF;
First-order section (Fig. 17.13a): R1 = R2 = 10 k, C = 1.59 nF
1 1 1 1
17.77 SL0 = , SC0 = , SR0 = 0; SLQ = , SCQ = , SRQ = 1
2 2 2 2
17.79 SA 0 = 0, SA = 2Q /A
Q 2
1 1 1
17.81 SC40 = SC60 = SR10 = SR30 = SR50 = , SR20 = + , SRQ6 = +1, SCQ6 = SRQ2 = + ,
2 2 2
1
SC4 = SR1 , R2 , R3 = ,
Q Q
2
17.83 1 mA/V; 0.99 k
17.85 0.314 mA/V
17.87 Gm1 = 2.51 mA/V; Gm2 = 0.251 mA/V
17.90 C1 = Q2 C; Gm = 0 QC
17.92 Gm = 0.785 mA/V; Gm2 = 0.785 mA/V; Gm3 = 0.157 mA/V; Gm4 = 0.785 mA/V
17.94 1 pC; 0.1 A; 0.1 V; 100 cycles; 104 V/s
17.96 C3 = C4 = 6.283 pF; C5 = 0.126 pF; C6 = 0.126 pF
17.98 80.3 rad/s; 83; 967 kHz; 66.7 V/V
17.100 838.8 kHz; 47.4
17.103 A (dB): 7, 8.5, 9.3, 9.8, 10.1; W/B: 31.6, 8.6, 5.9, 4.9, 4.5
CHAPTER 18
18.1 0 ; AK = 1
18.3 (a) 1; (b) 2
18.5 0.6 mA/V; 15.92 MHz
18.7 120 ; 0 = 3/CR; 2/R
18.11 0 = 1/CR; Q = 1/3; Gain= 1/3
R2
18.13 0 = 1/CR; Q = 1 2
R1
18.15 0 = 1/CR; R2 /R1 2
18.17 7.88 V
18.19 f0 = 406 Hz; Rf = 290 k
18.22 9.95 k; 3.6 V; add a diode in series with each of the limiter diodes.
C1 C2 C
18.24 0 = 1 L ; simplified condition: gm RL > 2
C1 + C2 C1
C1 C2 C
18.26 0 = 1 L ; gm RL > 1
C1 + C2 C2
18.28 (b) 0 = 1/ LC; IRC > 0.1 V, (c) (4/ ) V
18.30 2.0165 MHz to 2.0173 MHz, a range of 800 Hz.
L+ V L V
18.32 (a) VTH = + (R1 R2 R3 ); VTL = + (R1 R2 R3 );
R2 R3 R2 R3
(b) R2 = 656.7 k, R3 = 19.7 k
18.36 (a) Output will be either +12 V or 12 V; (b) The output is a symmetric square wave
(12 V) of frequency f and it lags the sine wave by an angle of 65.4 ; 0.1 V.
18.38 1989 Hz
18.40 VZ = 3.6 V; R1 = R = 25 k; R3 = 5.83 k; C = 0.01 F; R = 25 k
18.42 96 s
18.44 C1 = 1 nF, C2 = 0.1 nF, R1 = R2 = 100 k, R3 = 134.1 k, R4 = 470 k; 5.8 V;
61.8 s
18.46 (a) 18.2 k; (b) 10.67 V
18.48 (b) 100.6 kHz, 75%; (c) 15.6 s, 55.2 kHz, 86.2%; 3.90 s, 156 kHz, 61%
18.50 1.85 V