SM3317NSQA: Features Pin Description
SM3317NSQA: Features Pin Description
SM3317NSQA: Features Pin Description
DD
• 30V/34A, DD
Applications (4) G
N-Channel MOSFET
Ordering and Marking Information
SM3317NS Package Code
QA : DFN3x3-8
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel (3000ea/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device
SM
SM3317NS QA : 3317 XXXXX - Lot Code
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
3.0 14
12
2.5
10
8
1.5
6
1.0
4
0.5
2
o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
300 2
Normalized Transient Thermal Resistance
1 Duty = 0.5
100
0.2
it
im
0.1
)L
on
ID - Drain Current (A)
10
s(
0.05
Rd
0.1
300µs 0.02
1ms
1 0.01
10ms
100ms 0.01
Single Pulse
1s
0.1
DC
2
Mounted on 1in pad
o o
TA=25 C RθJA : 35 C/W
0.01 1E-3
0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
30 40
25
32
24
15
16
10
8
5
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
200 3
Normalized Transient Thermal Resistance
0.1
n)
ID - Drain Current (A)
s(o
0.1
0.05
Rd
10
1ms 0.02
0.01
0.01
10ms
1
DC
1E-3
o Single Pulse o
TC=25 C RθJC :5 C/W
0.1 1E-4
0.01 0.1 1 10 100 1E-6 1E-5 1E-4 1E-3 0.01 0.05
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
40 20
VGS=4,4.5,5,6,7,8,9,10V
35 18
25 14 VGS=4.5V
20 12
VGS=10V
15 10
10 8
3V
5 6
0 4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 8 16 24 32 40
35 1.6
IDS=20A IDS =250µA
30 1.4
Normalized Threshold Voltage
RDS(ON) - On Resistance (mΩ)
25 1.2
20 1.0
15 0.8
10 0.6
5 0.4
0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
2.0 40
VGS = 10V
1.8 IDS = 20A
Normalized On Resistance
1.6 10
1.2 o
Tj=25 C
1.0
1
0.8
0.6
0.4
o
RON@Tj=25 C: 10mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1000 10
Frequency=1MHz VDS=15V
900 9 I =20A
DS
800 8
VGS - Gate - source Voltage (V)
Ciss
700 7
C - Capacitance (pF)
600 6
500 5
400 4
300 3
200 2
Crss Coss
100 1
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14
Transfer Characteristics
60
50
o
Tj=125 C
ID - Drain Current (A)
40
30
20
o
10 Tj=25 C o
Tj=-55 C
0
0 1 2 3 4 5 6
VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω
tAV
VDS
RD
VDS
DUT 90%
VGS
RG
VDD
10%
tp VGS
td(on) tr td(off) tf
Package Information
DFN3x3-8
D A
D1 D2
E2
E1
E
E3
K
L
A1
e b A3
E1
F
W
B0
K0 A0 A
OD1 B
B
SECTION A-A
T
SECTION B-B
d
H
A
T1
Application A H T1 C d D W E1 F
8.4+2.00 13.0+0.50
178.0±2.00 50 MIN. 1.5 MIN. 20.2 MIN. 8.0±0.20 1.75±0.10 3.5±0.05
-0.00 -0.20
DFN3x3-8
P0 P1 P2 D0 D1 T A0 B0 K0
(punch type)
1.5+0.10 0.6+0.00
4.0±0.10 8.0±0.10 2.0±0.05 1.5 MIN. 3.35±0.20 3.35±0.20 1.30±0.20
-0.00 -0.40
(mm)
Classification Profile
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050