Sapphire (single crystal of Al2O3) is widely used as a substrate for III-V nitrides and other epitaxial films. MTI has been supplying sapphire substrates since 1991 and has built a venture in China to mass produce high quality sapphire crystals and polished wafers at competitive prices. MTI's specialists, advanced growth technology, and polishing facilities allow it to be one of the largest suppliers of sapphire crystals and wafers worldwide.
Sapphire (single crystal of Al2O3) is widely used as a substrate for III-V nitrides and other epitaxial films. MTI has been supplying sapphire substrates since 1991 and has built a venture in China to mass produce high quality sapphire crystals and polished wafers at competitive prices. MTI's specialists, advanced growth technology, and polishing facilities allow it to be one of the largest suppliers of sapphire crystals and wafers worldwide.
Sapphire (single crystal of Al2O3) is widely used as a substrate for III-V nitrides and other epitaxial films. MTI has been supplying sapphire substrates since 1991 and has built a venture in China to mass produce high quality sapphire crystals and polished wafers at competitive prices. MTI's specialists, advanced growth technology, and polishing facilities allow it to be one of the largest suppliers of sapphire crystals and wafers worldwide.
Sapphire (single crystal of Al2O3) is widely used as a substrate for III-V nitrides and other epitaxial films. MTI has been supplying sapphire substrates since 1991 and has built a venture in China to mass produce high quality sapphire crystals and polished wafers at competitive prices. MTI's specialists, advanced growth technology, and polishing facilities allow it to be one of the largest suppliers of sapphire crystals and wafers worldwide.
Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III -V nitrides and for many other epitaxial films. MTI has been supplying sapphire substrates since 1991 for research and industry. In order to meet the increasing demand for blue LED and LD devices,MTI has built up a venture in China to mass produce high quality sapphire crystal and epi polished wafer at the most competitive price. Our excellent specialists, advanced growth technology and state of art polishing facilities allow us to become one of the largest suppliers for sapphire crystal and wafer in the world.
Physical Properties of Sapphire
Crystal Structure Hexagonal. a =4.758 Å c= 12.992 Å
Crystallographic D spacing (1120 ) - a plane: 2.379 Å (1102) - r plane: 1.740 Å
(1010) - m plane: 1.375 Å (1123) - n plane: 1.147 ů (0001) - c plane: 2.165 Å (1011) - s plane: 1.961 Å Crystal Purity > 99.99% Melt Point 2040 oC Density 3.98 g/cm3 Hardness 9 ( mohs) Thermal Expansion 7.5 (x10-6/ oC) Specific Heat 0.10 ( cal / oC) Thermal Conductivity, 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) Dielectric Constant ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis Loss Tangent at 10 GHz < 2x10-5 at A axis , <5 x10-5 at C axis Standard Products As - grown boules 3" dia x 50 ~ 70 mm length <0001> ori.± 0.5o 2" dia x 50 ~ 70 mm length 30 mm dia x 150 mm length As-cut blanks 2" dia x 0.7 mm thickness <0001> ori.± 0.5o 1" dia x 0.7 mm thickness Epi -polished substrates 3" dia. x 0.5 mm o C, R, A plane: ori.± 0.5 2" dia. x 0.33 mm, 2"dia x 0.5 mm 1 or 2 sides polished 1" dia x 0.5 mm Ra< 10 Å 0.5" x 0.5" x 0.5 mm 10x10x0.5 mm Special size and orientation are available upon request
MTI Corporation 860 South 19th Street, Richmond, CA 94804, USA Tel: (510)525-3070 Fax: (510)525-4058 E-mail: [email protected] Website: www.mtixtl .com
