Vlsi Notes
Vlsi Notes
FINFET ADVANTAGES
Instead of a continuous channel, the FinFET uses fins, allowing transistor be low power,faster,
compact and continue scaling.
FinFET provides the same Ion current at a smaller size.
FinFET provides lower leakage current Ioff at the same Ion.
Microwind will now allow student to explore future technology which is different from 45 years
old planar style.
Learn about process variation and manufacturability issue with/without dummy gates.
Planar MOS were almost about to break Moore’s law, know how FinFET kept it intact.
FINFET TECHNOLOGY
FinFET, also known as Fin Field Effect Transistor, is a type of non -planar or "3D" transistor used in the
design of modern processors. FinFET designs also use a conducting channel t hat rises above the level of
the insulator, creating a thin silicon structure, shaped like a fin, which is called a gate electrode. This fin -
shaped electrode allows multiple gates to operate on a single transistor. This type of multi -gate process
extends Moore's law, allowing semiconductor manufacturers to create CPUs and memory modules that are
smaller, perform faster, and consume less energy.
A comprehensive introduction to design and fabrication of Very Large Scale Integrated (VLSI) circuits in
CMOS technology. The course gives an excellent insight into VLSI chip design and high-performance,
low-power circuit techniques.
Announcements:
2019-03-18: Lab Groups for Sessional – 1 are here.
2019-02-20: Quiz 01 on Monday 25th Feb from Chapter 01 and 02
2019-02-11: Lab File is here
2019-02-11: For Lab01 Download DSCH, see a short tutorial video here about how to launch the console.
2019-02-01 : Download DSCH and Microwind from links below and take with you in Lab.
2019-02-01 : You will get all the announcements regarding the VLSI Class here. You are Requested to
Visit Often.
Lectures:
Lecture 01: Introduction to VLSI Design
Lecture 02: Logic Design using MOSFETs – Part 1
Lecture 03: Logic Design using MOSFETs – Part 2
Lecture 04: Logic Design using MOSFETs – Part 3
Lecture 05: Quiz 01 and Lab02 Discussion
Lecture 06: Physical Structure of CMOS ICs – Part 1
Lecture 07: Physical Structure of CMOS ICs – Part 2
Lecture 08: Fabrication Process of CMOS ICs – Part 1
Lecture 09: Fabrication Process of CMOS ICs – Part 2
Lecture 10: Elements of Physical Design – Part 1
Lecture 11: Sessional – 1
Lecture 12: Sessional 1 Discussion
Lecture 13: Elements of Physical Design – Part 2
Lecture 14: Electrical Characteristics of MOSFETs – Part 1
Lecture 16: Electrical Characteristics of MOSFETs – Part 2
Lecture 17: Quiz No 2
Lecture 18: Electronic Analysis of CMOS Logic Gates – Part 1
Lecture 19: Electronic Analysis of CMOS Logic Gates – Part 2
Lecture 20: Sessional – II
Lecture 21: Sessional – II Discussion
Lecture 22: Advanced Techniques in CMOS Logic Circuits – Part 1
Lecture 23: Quiz 03
Lecture 24: Advanced Techniques in CMOS Logic Circuits – Part 2
Lecture 25: Advanced Techniques in CMOS Logic Circuits – Part 3
Lecture 27: VLSI Design of Complex Algorithms
Lecture 27 Additional Material: SoC Encounter Manual – Cadence Design Tools