CNY70

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

Description Marking area

The CNY70 is a reflective sensor that includes an
infrared emitter and phototransistor in a leaded pack-
age which blocks visible light. E D

Features
• Package type: Leaded Top view
19158
• Detector type: Phototransistor
• Dimensions: L 7 mm x W 7 mm x H 6 mm e4
• Peak operating distance: < 0.5 mm
• Operating range: 0 mm to 4.5 mm
• Typical output current under test: IC = 1 mA Applications
• Daylight blocking filter Optoelectronic scanning and switching devices i.e.,
• Emitter wavelength 950 nm index sensing, coded disk scanning etc. (optoelec-
• Lead (Pb)-free soldering released tronic encoder assemblies).
• Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
• Minimum order quantity 4000 pcs in tubes,
80 pcs/tube

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Coupler
Parameter Test condition Symbol Value Unit
Total power dissipation Tamb ≤ 25 °C Ptot 200 mW
Ambient temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Distance to case 2 mm, t ≤ 5 s Tsd 260 °C

Input (Emitter)
Parameter Test condition Symbol Value Unit
Reverse voltage VR 5 V
Forward current IF 50 mA
Forward surge current tp ≤ 10 µs IFSM 3 A
Power dissipation Tamb ≤ 25°C PV 100 mW
Junction temperature Tj 100 °C

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Vishay Semiconductors

Output (Detector)
Parameter Test condition Symbol Value Unit
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation Tamb ≤ 25 °C PV 100 mW
Junction temperature Tj 100 °C

300
P - Power Dissipation (mW)

Coupled device
200

Phototransistor
100
IR - diode

0
0 25 50 75 100
95 11071 Tamb - Ambient Temperature (°C)

Figure 1. Power Dissipation Limit vs. Ambient Temperature

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified

Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Collector current VCE = 5 V, IF = 20 mA, IC1) 0.3 1.0 mA
d = 0.3 mm (figure 2)
Cross talk current VCE = 5 V, IF = 20 mA (figure 1) ICX2) 600 nA
Collector emitter saturation IF = 20 mA, IC = 0.1 mA, VCEsat1) 0.3 V
voltage d = 0.3 mm (figure 2)
1) Measured with the ‘Kodak neutral test card", white side with 90 % diffuse reflectance
2)
Measured without reflecting medium

Input (Emitter)
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 50 mA VF 1.25 1.6 V
Radiant intensity IF = 50 mA, tP = 20 ms Ie 7.5 mW/sr
Peak wavelength IF = 100 mA λP 940 nm
Virtual source diameter Method: 63 % encircled energy Ø 1.2 mm

Output (Detector)
Parameter Test condition Symbol Min Typ. Max Unit
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 µA VECO 5 V
Collector dark current VCE = 20 V, If = 0, E = 0 ICEO 200 nA

www.vishay.com Document Number 83751

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 CNY70
Vishay Semiconductors

Reflecting medium
(Kodak neutral test card)

~~
~
d ~
~~ Detector

Emitter

A C E C
95 10893

Figure 2. Test Condition

Typical Characteristics
Tamb = 25 °C unless otherwise specified

1000 10
Kodak neutral card
IC - Collector Current (mA)

(white side)
I F - Forward Current (mA)

1 d = 0.3 mm
100
VCE = 5 V

10 0.1

1 0.01

0.1 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 V F - Forward Voltage (V) 95 11065 I F - Forward Current (mA)

Figure 3. Forward Current vs. Forward Voltage Figure 5. Collector Current vs. Forward Current

1.5 10
CTR rel - Relative Current Transfer Ratio

Kodak neutral card

1.4 V =5V (white side) I F = 50 mA
CE d = 0.3 mm
I C - Collector Current (mA)

1.3 I F = 20 mA
1 20 mA
1.2 d = 0.3 mm
10 mA
1.1
1.0 0.1 5 mA
0.9
2 mA
0.8
0.01
0.7 1 mA
0.6
0.5 0.001
- 30 - 20 -10 0 10 20 30 40 50 60 70 80 0.1 1 10 100
96 11913 Tamb - Ambient Temperature (°C) 95 11066 VCE - Collector Emitter Voltage (V)

Figure 4. Relative Current Transfer Ratio vs. Figure 6. Collector Current vs. Collector Emitter Voltage
Ambient Temperature

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Vishay Semiconductors

100 10
Kodak neutral card
CTR - Current Transfer Ratio (%)

(white side)

I C - Collector Current (mA)

d = 0.3 mm
V CE = 5 V
10 1
d

1 0.1

V CE = 5 V
I F = 20 mA

0.1 0.001
0.1 1 10 100 0 2 4 6 8 10
96 11914 I F - Forward Current (mA) 95 11069 d - Distance (mm)

Figure 7. Current Transfer Ratio vs. Forward Current Figure 9. Collector Current vs. Distance

0° 10° 20°
10 Icrel - Relative Collector Current 30°
CTR - Current Transfer Ratio (%)

I erel - Relative Radiant Intensity

I F =50 mA

40°
1 mA 1.0
20 mA
1 10 mA 0.9 50°
5 mA
2 mA 0.8
Kodak neutral card 60°
(white side) 70°
d = 0.3 mm 0.7
80°
0.1
0.1 1 10 100 0.6 0.4 0.2 0 0.2 0.4 0.6
96 12001 V CE - Collector Emitter Voltage (V) 95 11063

Figure 8. Current Transfer Ratio vs. Collector Emitter Voltage Figure 10. Relative Radiant Intensity/Collector Current vs.
Angular Displacement

1.0
I Crel - Relative Collector Current

0.9 0
1.5 s
0.8
d = 5 mm E D 5 mm
0.7 4 mm 10 mm
0.6 3 mm d
2 mm
0.5 0
1 mm E s
0.4 0 5 mm
0.3 D
10 mm
VCE = 5 V
0.2
I F = 20 mA
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10 11
96 11915 s - Displacement (mm)

Figure 11. Relative Collector Current vs. Displacement

www.vishay.com Document Number 83751

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 CNY70
Vishay Semiconductors

Package Dimensions

95 11345

Tube Dimensions

20291

Document Number 83751 www.vishay.com

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Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com Document Number 83751

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 Legal Disclaimer Notice
Vishay

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1