SW2N60DC

N-channel Enhanced mode TO-252/TO-251 MOSFET

Features TO-252 TO-251 BVDSS :600V
ID : 2A
 High ruggedness
 Low RDS(ON) (Typ 3.9Ω)@VGS=10V RDS(ON) : 3.9Ω
 Low Gate Charge (Typ9.5nC)
 Improved dv/dt Capability
 100% Avalanche Tested 1 1 2
Application:Charge,Adaptor,LED 2 2
3 3
1. Gate 2. Drain 3. Source 1

3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.

Order Codes
Item Sales Type Marking Package Packaging
1 SW D 2N60DC SW2N60DC TO-252 REEL
2 SW I 2N60DC SW2N60DC TO-251 TUBE

Absolute maximum ratings

Value
Symbol Parameter Unit
TO-252 TO-251
VDSS Drain to source voltage 600 V
Continuous drain current (@TC=25oC) 2* A
ID
Continuous drain current (@TC=100oC) 1.26* A
IDM Drain current pulsed (note 1) 8 A
VGS Gate to source voltage ±30 V
EAS Single pulsed avalanche energy (note 2) 80 mJ

EAR Repetitive avalanche energy (note 1) 12 mJ

dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns

Total power dissipation (@TC=25oC) 78 78 W
PD
Derating factor above 25oC 0.6 0.6 W/oC
TSTG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC

Maximum lead temperature for soldering oC

TL 300
purpose, 1/8 from case for 5 seconds.

*. Drain current is limited by junction temperature.

Thermal characteristics
Value
Symbol Parameter Unit
TO-252 TO-251
Rthjc Thermal resistance, Junction to case 1.6 1.6 oC/W

Rthja Thermal resistance, Junction to ambient 79 86.6 oC/W

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 1/6
 SW2N60DC
Electrical characteristic ( TC = 25oC unless otherwise specified )

Symbol Parameter Test conditions Min. Typ. Max. Unit

Off characteristics

BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 600 V

ΔBVDSS Breakdown voltage temperature

ID=250uA, referenced to 25oC 0.5 V/oC
/ ΔTJ coefficient

VDS=600V, VGS=0V 1 uA
IDSS Drain to source leakage current
VDS=480V, TC=125oC 50 uA

Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA

IGSS
Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA

On characteristics

VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.5 4.5 V

RDS(ON) Drain to source on state resistance VGS=10V, ID = 1A 3.9 4.5 Ω

Gfs Forward transconductance VDS= 30V, ID= 1 A 1.6 S

Dynamic characteristics

Ciss Input capacitance 305

Coss Output capacitance VGS=0V, VDS=25V, f=1MHz 45 pF

Crss Reverse transfer capacitance 15

td(on) Turn on delay time 6.5

tr Rising time VDS=300V, ID=2A, VGS=10V, 20

RG=25Ω ns
td(off) Turn off delay time (note 4,5) 19

tf Fall time 21

Qg Total gate charge 9.5

VDS=480V, VGS=10V, ID=2A
Qgs Gate-source charge 2.5 nC
(note 4,5)
Qgd Gate-drain charge 4

Source to drain diode ratings characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

IS Continuous source current Integral reverse p-n Junction 2 A
ISM Pulsed source current diode in the MOSFET 8 A
VSD Diode forward voltage drop. IS=2A, VGS=0V 1.4 V
trr Reverse recovery time IS=2A, VGS=0V, 250 ns
Qrr Reverse recovery charge dIF/dt=100A/us 1.1 uC

※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 40mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 2A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 2/6
 SW2N60DC
Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs.
drain current and gate voltage

Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode

forward voltage

Fig 5. Breakdown Voltage Variation Fig. 6. On resistance variation

vs. Junction Temperature vs. junction temperature

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 3/6
 SW2N60DC
Fig. 7. Maximum safe operating area(TO-252) Fig. 8. Maximum safe operating area(TO-251)

Fig. 9. Capacitance Characteristics

Fig. 10. Transient thermal response curve(TO-252)

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 4/6
 SW2N60DC
Fig. 11. Transient thermal response curve(TO-251)

Fig. 12. Gate charge test circuit & waveform

Same type VGS

as DUT
QG

10V
VDS
QGS QGD

DUT
VGS

0.5mA
Charge(nC)

Fig. 13. Switching time test circuit & waveform

VDS 90%
RL

VDS

VDD
VIN 10% 10%

10VIN RGS td(off) tf

DUT td(on) tr

tON tOFF

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 5/6
 SW2N60DC
Fig. 14. Unclamped Inductive switching test circuit & waveform

Fig. 15. Peak diode recovery dv/dt test circuit & waveform

DUT + VDS VGS (DRIVER) 10V

-
IS L di/dt
IS (DUT)

VDS IRM

RG VDD Diode reverse current

Diode recovery dv/dt

10VGS Same type
as DUT
VDS (DUT) VF VDD

*. dv/dt controlled by RG
*. Is controlled by pulse period Body diode forward voltage drop

DISCLAIMER
* All the data&curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 2.0 6/6