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    Semiconductor Physics

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    MOHAMMED AFZAL
    Direct and indirect band gap semiconductors are distinguished by whether the minimum of the conduction band and maximum of the valence band occur at the same point in reciprocal space (direct) or different points (indirect). Direct semiconductors like GaAs can recombine electrons and holes directly through light emission, while indirect semiconductors like Si require an intermediate state through phonons, generating heat instead of light. An open-circuit p-n junction forms a depletion region and barrier potential across the junction due to differences in the band structures of the p-type and n-type materials.

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    Semiconductor Physics

    Uploaded by

    MOHAMMED AFZAL
    32 views28 pages
    Direct and indirect band gap semiconductors are distinguished by whether the minimum of the conduction band and maximum of the valence band occur at the same point in reciprocal space (direct) or different points (indirect). Direct semiconductors like GaAs can recombine electrons and holes directly through light emission, while indirect semiconductors like Si require an intermediate state through phonons, generating heat instead of light. An open-circuit p-n junction forms a depletion region and barrier potential across the junction due to differences in the band structures of the p-type and n-type materials.

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    Direct and indirect band gap semiconductors are distinguished by whether the minimum of the conduction band and maximum of the valence band occur at the same point in reciprocal space (direct) or different points (indirect). Direct semiconductors like GaAs can recombine electrons and holes directly through light emission, while indirect semiconductors like Si require an intermediate state through phonons, generating heat instead of light. An open-circuit p-n junction forms a depletion region and barrier potential across the junction due to differences in the band structures of the p-type and n-type materials.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    32 views28 pages

    Semiconductor Physics

    Uploaded by

    MOHAMMED AFZAL
    Direct and indirect band gap semiconductors are distinguished by whether the minimum of the conduction band and maximum of the valence band occur at the same point in reciprocal space (direct) or different points (indirect). Direct semiconductors like GaAs can recombine electrons and holes directly through light emission, while indirect semiconductors like Si require an intermediate state through phonons, generating heat instead of light. An open-circuit p-n junction forms a depletion region and barrier potential across the junction due to differences in the band structures of the p-type and n-type materials.

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    of 28

    SEMICONDUCTOR PHYSICS

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    Direct and Indirect band gap semiconductors:
    .
    Direct band gap semiconductor Indirect band gap semiconductor
    1 These are impure or Extrinsic or These are pure or intrinsic or elemental
    compound semiconductors. Semiconductors
    2 Examples : InP, GaAs, GaAsPetc Examples : Ge, Si

    4 The minimum energy of Conduction The minimum energy of Conduction band


    band (CB) and maximum energy of (CB) and maximum energy of valence band
    valence band (VB) have the same (VB) have the different values of wave
    value of wave vector ‘k’ Vector ‘k’.

    5 Here an electron from CB to can Here an electron from CB can recombine


    recombine with a hole in VB directly with holes in VB indirectly through traps.
    by emitting light of photon of energy Here no emission of light photon.The
    ‘hν’ electron must pass through an intermediate
    state and transfer momentum to the crystal
    lattice through phonons leading to the rise
    of temperature of the material.
    6 They are used to fabricate LEDs, They are used to amplify the signals in
    Laser Diodes etc. electronic devices like transistors,
    amplifiers etc
    7 Life time (recombination rate) of Life time of charge carriers is more.
    charge carriers is very less.

    8 Emission of light has energy gap is No emission of light. It conducts only


    𝐸𝑔 = ℎ𝜗 𝑒𝑉 electricity and heat is generated

    Note: A common and simple method for determining whether a band gap is direct or indirect uses
    absorption spectroscopy.

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    FORMATION OF OPEN-CRCUITED p-n JUNCTION:

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    Shown in fig 3-1e. Across the depletion region, barrier potential V0 developed.

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    The contact potential separates the energy bands in p—type and n- type crystals. Since there is no net
    current flow at equilibrium i.e under unbiased condition, it should have common Fermi level. Hence
    in PN junction diode the valance and conduction band energy levels Evp and Ecp of p- type and at
    higher level compared to the valance and conduction band energy levels Evn and Ecn of n-type . The
    electric potential V0 across the junction is obtained from`

    Evp - Evn = Ecp - Ecn = eV0

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    Diode equation:

    The contact potential separates the energy bands in p—type and n- type crystals. The valance and
    conduction band energy levels Evp and Ecp of p- type and at higher level compared to the valance
    and conduction band energy levels Evn and Ecn of n-type . The electric potential VB across the
    junction is obtained from` Evp - Evn = Ecp - Ecn = eVB.

    Note: Replace Eg with Ec and V0 with VB


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    similarly

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