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    BD 911

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    Ana
    This document provides information about complementary silicon power transistors models BD909, BD910, BD911, and BD912. It includes maximum ratings, electrical characteristics, thermal data, and mechanical specifications for the TO-220 packaged devices.

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    BD 911

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    Ana
    106 views6 pages
    This document provides information about complementary silicon power transistors models BD909, BD910, BD911, and BD912. It includes maximum ratings, electrical characteristics, thermal data, and mechanical specifications for the TO-220 packaged devices.

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    This document provides information about complementary silicon power transistors models BD909, BD910, BD911, and BD912. It includes maximum ratings, electrical characteristics, thermal data, and mechanical specifications for the TO-220 packaged devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    106 views6 pages

    BD 911

    Uploaded by

    Ana
    This document provides information about complementary silicon power transistors models BD909, BD910, BD911, and BD912. It includes maximum ratings, electrical characteristics, thermal data, and mechanical specifications for the TO-220 packaged devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    BD909/911

    ® BD910/912

    COMPLEMENTARY SILICON POWER TRANSISTORS

    ■ STMicroelectronics PREFERRED
    SALESTYPES

    DESCRIPTION
    The BD909 and BD911 are silicon Epitaxial-Base
    NPN power transistors mounted in Jedec TO-220
    plastic package. They are intented for use in
    power linear and switching applications.
    The complementary PNP types are BD910 and 3
    BD912 respectively. 2
    1

    TO-220

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    NPN BD909 BD911
    PNP BD910 BD912
    V CBO Collector-Base Voltage (I E = 0) 80 100 V
    V CEO Collector-Emitter Voltage (I B = 0) 80 100 V
    VEBO Emitter-Base Voltage (I C = 0) 5 V
    I E ,IC Collector Current 15 A
    IB Base Current 5 A
    P tot Total Dissipation at T c ≤ 25 C o
    90 W
    o
    Tstg Storage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C
    For PNP types voltage and current values are negative.

    October 1999 1/6


    BD909 / BD910 / BD911 / BD912

    THERMAL DATA
    o
    R thj-case Thermal Resistance Junction-case Max 1.4 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CBO Collector Cut-off for BD909/910 V CB = 80 V 500 µA
    Current (I E = 0) for BD911/912 V CB = 100 V 500 µA
    T case = 150 o C
    for BD909/910 V CB = 80 V 5 mA
    for BD911/912 V CB = 100 V 5 mA
    I CEO Collector Cut-off for BD909/910 V CE = 40 V 1 mA
    Current (I B = 0) for BD911/912 V CE = 50 V 1 mA
    IEBO Emitter Cut-off Current V EB = 5 V 1 mA
    (I C = 0)
    V CEO(sus) ∗ Collector-Emitter I C = 100 mA for BD909/910 80 V
    Sustaining Voltage for BD911/912 100 V
    (I B = 0)
    VCE(sat) ∗ Collector-Emitter IC = 5 A I B = 0.5 A 1 V
    Saturation Voltage I C = 10 A I B = 2.5 A 3 V
    V BE(sat) ∗ Base-Emitter I C = 10 A I B = 2.5 A 2.5 V
    Saturation Voltage
    V BE ∗ Base-Emitter Voltage IC = 5 A V CE = 4 V 1.5 V
    h FE ∗ DC Current Gain I C = 0.5 A V CE = 4 V 40 250
    IC = 5 A V CE = 4 V 15 150
    I C = 10 A V CE = 4 V 5
    fT Transition frequency I C = 0.5 A V CE = 4 V 3 MHz
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
    For PNP types voltage and current values are negative.

    Safe Operating Area Derating Curves

    2/6
    BD909 / BD910 / BD911 / BD912

    DC Current Gain (NPN type) DC Current Gain (PNP type)

    DC Transconductance (NPN type) DC Transconductance (PNP type)

    Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type)

    3/6
    BD909 / BD910 / BD911 / BD912

    Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type)

    Transition Frequency (NPN type) Transition Frequency (PNP type)

    4/6
    BD909 / BD910 / BD911 / BD912

    TO-220 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 4.40 4.60 0.173 0.181
    C 1.23 1.32 0.048 0.051
    D 2.40 2.72 0.094 0.107
    D1 1.27 0.050
    E 0.49 0.70 0.019 0.027
    F 0.61 0.88 0.024 0.034
    F1 1.14 1.70 0.044 0.067
    F2 1.14 1.70 0.044 0.067
    G 4.95 5.15 0.194 0.203
    G1 2.4 2.7 0.094 0.106
    H2 10.0 10.40 0.393 0.409
    L2 16.4 0.645
    L4 13.0 14.0 0.511 0.551
    L5 2.65 2.95 0.104 0.116
    L6 15.25 15.75 0.600 0.620
    L7 6.2 6.6 0.244 0.260
    L9 3.5 3.93 0.137 0.154
    DIA. 3.75 3.85 0.147 0.151

    P011C

    5/6
    BD909 / BD910 / BD911 / BD912

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

    © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

    http://www.st.com
    .

    6/6

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