2SJ553(L),2SJ553(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-650B (Z)
3rd. Edition
Jun 1998

Features

• Low on-resistance
R DS(on) = 0.028Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.

Outline

LDPAK

4 4

1
2
3
G 1
2
3 1. Gate
2. Drain
3. Source
4. Drain
S
2SJ553(L),2SJ553(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID –30 A
Note1
Drain peak current I D(pulse) –120 A
Body-drain diode reverse drain current I DR –30 A
Note3
Avalanche current I AP –30 A
Note3
Avalanche energy EAR 77 mJ
Note2
Channel dissipation Pch 75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS –60 — — V I D = –10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0
Zero gate voltege drain current I DSS — — –10 µA VDS = –60 V, VGS = 0
Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V
Static drain to source on state RDS(on) — 0.028 0.037 Ω I D = –15A, VGS = –10V Note4
resistance RDS(on) — 0.038 0.055 Ω I D = –15A, VGS = –4V Note4
Forward transfer admittance |yfs| 15 25 — S I D = –15A, VDS = –10V Note4
Input capacitance Ciss — 2500 — pF VDS = –10V
Output capacitance Coss — 1300 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1MHz
Turn-on delay time t d(on) — 25 — ns VGS = –10V, I D = –15A
Rise time tr — 150 — ns RL = 2Ω
Turn-off delay time t d(off) — 350 — ns
Fall time tf — 220 — ns
Body–drain diode forward voltage VDF — –0.95 — V I F = –30A, VGS = 0
Body–drain diode reverse t rr — 100 — ns I F = –30A, VGS = 0
recovery time diF/ dt =50A/µs
Note: 4. Pulse test

2
 2SJ553(L),2SJ553(S)

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

80 –1000
Pch (W)

10

I D (A)
–100
µs
60
10
0
PW µs
1
m
Channel Dissipation

= s

Drain Current
DC 10
40 –10 Op ms
er (1
sh
Operation in (T atio ot)
c= n
this area is 2 5
°C
20 –1 limited by R DS(on) )

Ta = 25 °C
–0.1
0 50 100 150 200 –0.1 –1 –10 –100
Case Temperature Tc (°C) Drain to Source Voltage V DS (V)

Typical Output Characteristics Typical Transfer Characteristics

–50 –50
V DS = –10 V
–8 V –3.5 V Pulse Test
–40 –40
I D (A)

I D (A)

–5 V Pulse Test
–4 V
–30 –30
VGS = –10 V
Drain Current

Drain Current

–3 V
–20 –20

Tc = 75 °C 25 °C
–10 –2.5 V –10
-25 °C
–2 V
0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5
Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V)

3
2SJ553(L),2SJ553(S)

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
–5 1
Pulse Test

Drain to Source On State Resistance

R DS(on) ( Ω )
Drain to Source Saturation Voltage
V DS(on) (V)

0.5
–4

0.2
–3
0.1
–2
I D = –50 A 0.05 VGS = –4 V

–1 –10 V
–20 A 0.02
–10 A Pulse Test
0.01
0 –4 –8 –12 –16 –20 –1 –3 –10 –30 –100 –300 –1000
Gate to Source Voltage V GS (V) Drain Current I D (A)

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current
100
Static Drain to Source on State Resistance

0.1
Forward Transfer Admittance |y fs | (S)
R DS(on) ( Ω)

Pulse Test
30
0.08 Tc = –25 °C
–20 A
10 25 °C
–10 A
0.06 I D = –50 A
–50 A
V GS = –4 V 3
75 °C
0.04 –10,–20A 1

0.02 V GS = –10 V 0.3 V DS = –10 V

Pulse Test
0 0.1
–40 0 40 80 120 160 –0.1 –0.3 –1 –3 –10 –30 –100
Case Temperature Tc (°C) Drain Current I D (A)

4
 2SJ553(L),2SJ553(S)

Body–Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
1000 10000
VGS = 0
Reverse Recovery Time trr (ns)

500 f = 1 MHz
3000 Ciss

Capacitance C (pF)
200 1000
Coss
100 300

50 100 Crss

20 di / dt = 50 A / µs 30
VGS = 0, Ta = 25 °C
10 10
0.1 0.3 1 3 10 30 100 0 –10 –20 –30 –40 –50
Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V)

Dynamic Input Characteristics Switching Characteristics

0 0 1000
V DS (V)

V GS (V)

V DD = –10 V V DS
–25 V t d(off)
500
Switching Time t (ns)

–20 –50 V –4
I D = –30 A
tf
Drain to Source Voltage

Gate to Source Voltage

200
–40 –8
100 tr
V GS
–60 –12
V DD = –10 V 50
–25 V
t d(on)
–80 –50 V –16
20
V GS = –10 V, V DD = –30 V
PW = 5 µs, duty <
=1%
–100 –20 10
0 40 80 120 160 200 –0.1 –0.3 –1 –3 –10 –30 –100
Gate Charge Qg (nc) Drain Current I D (A)

5
2SJ553(L),2SJ553(S)

Reverse Drain Current vs. Maximum Avalanche Energy vs.

Source to Drain Voltage Channel Temperature Derating
–50 100

Repetitive Avalanche Energy EAR (mJ)

Pulse Test I AP = –30 A
Reverse Drain Current I DR (A)

V DD = –25 V
–40 80
duty < 0.1 %
Rg > 50 Ω
–5 V
–30 60

–10 V V GS = 0
–20 40

–10 20

0
0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150
Source to Drain Voltage V SD (V) Channel Temperature Tch (°C)

Avalanche Test Circuit Avalanche Waveform

1 VDSS
2
EAR = • L • I AP •
L 2 VDSS – V DD
V DS
Monitor
I AP V (BR)DSS
Monitor
I AP
Rg D. U. T VDD V DS
ID
Vin 50Ω
–15 V
VDD
0

6
 2SJ553(L),2SJ553(S)

Normalized Transient Thermal Impedance vs. Pulse Width

3
Normalized Transient Thermao Impedance γ s (t)

Tc = 25°C
1
D=1

0.5
0.3

0.2
θ ch – c(t) = γ s (t) • θ ch – c
0.1 0.1 θ ch – c = 1.67 °C/W, Tc = 25 °C
0.05
PDM PW
D=
0.02 T
0.03 1 lse
0.0 t pu PW
h o
1s T

0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (S)

Switching Time Test Circuit Waveform

Vin Monitor Vout Vin

Monitor
D.U.T. 10%
RL
90%

Vin V DD 90%
50Ω 90%
-10 V = –30 V

Vout 10% 10%

td(on) tr td(off) tf

7
2SJ553(L),2SJ553(S)

Package Dimensions

Unit: mm

(1.4)
10.2 ± 0.3 4.44 ± 0.2
1.3 ± 0.2
11.3 ± 0.5
8.6 ± 0.3
10.0 +0.3
–0.5

(1.4)
10.2 ± 0.3 4.44 ± 0.2
1.3 ± 0.2
(1.5)

2.59 ± 0.2
1.2 ± 0.2 1.27 ± 0.2

8.6 ± 0.3
10.0 +0.3
–0.5
0.86 +0.2
–0.1
11.0 ± 0.5

(1.5)
0.76 ± 0.1

(1.5)
0.1 +0.2
–0.1
2.59 ± 0.2

3.0 +0.3
–0.5
1.27 ± 0.2

0.4 ± 0.1
0.4 ± 0.1 1.2 ± 0.2 0.86 +0.2
–0.1
2.54 ± 0.5 2.54 ± 0.5 2.54 ± 0.5 2.54 ± 0.5

L type S type

Hitachi Code LDPAK

EIAJ —
JEDEC —

8
Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Stra§e 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.