35N06

N-Channel Enhancement MOSFET

■ Features
TO-252 Unit: mm ● VDS (V) = 60V
● ID = 35 A
0.15
1.50 -+ 0.15

6.50-+ 0.15
0.15
2.30-+ 0.1
0.1
5.30-+ 0.2
0.2
0.50 + 0.8
- 0.7 ● RDS(ON) ＜ 23mΩ (VGS = 10V)
4 ● RDS(ON) ＜ 33mΩ (VGS = 4.5V)

3 .8 0
● RDS(ON) ＜ 37mΩ (VGS = 4V)
0.15
5.55 -+ 0.15
0.2
9.70 -+ 0.2

0.15
0.50 -+ 0.15

0.127
0.80-0.1
+0.1
max 2,4
+0.25
-0.1
0.28
1.50 -+ 0.1

2.65

2.3 0.60-+ 0.1

0.1
1 : Gate
4.60-+ 0.15 2 : Drain
1
0.15

3 : Source
4 : Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ±20
Continuous Drain Current ID 35
Pulsed Drain Current (Note.1) IDP 105 A
Avalanche Current (Note.2) IAV 18
Avalanche Energy (Single Pulse) (Note.3) EAS 19 mJ
Power Dissipation Tc=25°C PD 40 W
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

Note.1 :PW ≤ 10 us, duty cycle ≤ 1%

Note.2 :L≤100μH, Single pulse
Note.3 :VDD=10V, L=100μH, IAV=18A
 35N06
N-Channel Enhancement MOSFET

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=1mA, VGS=0V 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1
μA
Gate-Body Leakage Current IGSS VDS=0V, VGS=±16V ±10
Cutoff Voltage VGS(off) VDS=10V , ID=1mA 1.2 2.6 V
Forward Transfer Admittance |Yfs | VDS=10V , ID=18A 35 S
RDS(On)1 VGS=10V, ID=18A 17 23
Static Drain-Source On-Resistance RDS(On)2 VGS=4.5V, ID=9A 23 33 mΩ
RDS(On)3 VGS=4.0V, ID=5A 25 37
Input Capacitance Ciss 1820
Output Capacitance Coss VGS=0V, VDS=20V, f=1MHz 150 pF
Reverse Transfer Capacitance Crss 100
Total Gate Charge Qg 34.5
Gate Source Charge Qgs VGS=10V, VDS=30V, ID=35A 6.5 nC
Gate Drain Charge Qgd 6.8
Turn-On DelayTime td(on) 16
Turn-On Rise Time tr 110
See specified Test Circuit ns
Turn-Off DelayTime td(off) 125
Turn-Off Fall Time tf 87
Maximum Body-Diode Continuous Current IS 35 A
Diode Forward Voltage VSD IS=35A,VGS=0V 0.96 1.2 V

Switching Time Test Circuit:

VIN VDD=30V
10V
0V
ID=18A
VIN RL=1.67Ω
D VOUT
PW=10μs
D.C.≤1%
G

P.G 50Ω S
 35N06
N-Channel Enhancement MOSFET

■ Typical Characterisitics
ID -- VDS ID -- VGS
35 60
Tc=25° C VDS=10V
3.5V

°C
V

Single pulse Single pulse

4.0

C
25°
--25
30
50
V

Tc=
6.0V

4.5

C
75°
Drain Current, ID -- A

Drain Current, ID -- A
25
8.0V

3.0V 40

20
16.0 10.0V

30
15
V

C
75°
20
10

Tc=

C
VGS=2.5V

°
10

--25
°C
5

25
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS RDS(on) -- Tc
55 55
Tc=25° C Single pulse
50 Single pulse 50
On-State Resistance, RDS(on) -- mΩ

On-State Resistance, RDS(on) -- mΩ

45 45
ID=5A
40 40
9A
35 35
=5A
18A 0 V , ID
30 30 =4 .
Static Drain-to-Source

Static Drain-to-Source

VGS =9A
25 25
5V , ID
=4 . A
VGS =18
20 20
. 0 V, ID
=10
15 15 VGS
10 10

5 5
0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °
C
|yfs | -- ID IS -- VSD
7 100
5 VDS=10V 7
5
VGS=0V
Single pulse
Forward Transfer Admittance, |yfs | -- S

Single pulse 3
2
3
°C 10
2
25 7
5
Source Current, IS -- A

3
C 2
5°
10 --2 1.0
= °C
7 Tc 75
7
5
3
C
C
C
75°

--25°
25°

5 2
0.1
Tc=

3 7
5
2 3
2
0.01
7
1.0 5
3
7 2
5 0.001
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
 35N06
N-Channel Enhancement MOSFET

■ Typical Characterisitics
SW Time -- ID Ciss, Coss, Crss -- VDS
7 5
VDD=30V f=1MHz
5
VGS=10V 3

Ciss
Switching Time, SW Time -- ns

3 2
2 td(off)

Ciss, Coss, Crss -- pF

1000
100 7
7 tf 5
5
3
3 tr 2
2 td(on) Coss
100 Crss
10 7
7 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 10 20 30 40 50 60
Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V

VGS -- Qg ASO
10 3
VDS=30V 2
9 ID=35A IDP=105A PW≤10μs
100 10
Gate-to-Source Voltage, VGS -- V

μs
8 7 10
5 ID=35A 10 0μ
ms s
Drain Current, ID -- A

7 3

1m
2 10
0m

s
6
10 s
7
5 5
3
4 Operation in this area
DC

2
is limited by RDS(on).
op

3
er

1.0
ati

7
on

2 5
3
1 2 Tc=25° C
. Single pulse
0 0.1
0 5 10 15 20 25 30 35 40 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Total Gate Charge, Qg -- nC Drain-to-Source Voltage, V -- V
DS
PD -- Tc EAS -- Ta
45 120
Allowable Power Dissipation, PD -- W

40
Avalanche Energy derating factor -- %

100
35

30 80

25
60
20

15 40

10
20
5

0 0
0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175
Case Temperature, Tc -- °
C Ambient Temperature, Ta -- °
C