Principles of Semiconductor Devices-Lecture39
Principles of Semiconductor Devices-Lecture39
Principles of Semiconductor Devices-Lecture39
www.nanohub.org
1. IntroducDon
5. Conclusion
4
before
stress
15
%
degradaDon
3
ID
(mA)
10
Spec.
2
aZer
stress
Warranty
1
5
0
0
1
2
3
4
101
103
105
107
109
VD
(volts)
Stress
Time
(sec)
Alam
ECE-‐606
S09
5
NBTI
defined
…
n
~
0.25
Ea
~
0.5
eV
A
depends
on
Eox
x
~
(Dt)0.5
x
Alam
ECE-‐606
S09
7
Si substrate NIT
with
H
diffusion
Si H
Poly
H
Si H H
Si H HH
NH
1. IntroducBon
5. Conclusion
C/Cox
Ideal
VT
VG
Actual
VT
6
VG1>VG2>VG3
VDD
4
2
0
ln(-‐ln(1-‐F))
-‐2
Gate
Current
Breakdown
-‐4
-‐6
-‐8
-‐10
ln
(Bme)
-‐2
0
2
4
6
8
10
log(TBD)
Jh=JeαTp
Je
=
A
exp(-‐B/E)
α =
1-‐2
Tp
~
const
ln(TBD)
~
1/R
~
1/E
B
A
V~low
Je
~
f(E)
A
<αTp>
~
M
exp(DV)
ln(TBD)
~
1/R
~
V
B
ln(-‐ln(1-‐F))
P1
=
(χ) exp(-χ)
-‐2
-‐4
with χ=(t/η)β and β=Mα
-‐6
-‐8
100
/million
F1
(χ)=
1
-‐
Po (χ) -‐10
-‐2
0
2
4
6
8
10
ln
[
-‐ln
(1-‐F1)
]~β ln
t
log(TBD)
Alam
ECE-‐606
S09
15
Outline
1. IntroducBon
5. Conclusion
C/Cox
Ideal
VT
VG
Actual
VT