SCHOOL OF ELECTRONICS ENGINEERING (SENSE)

ECE1002 - SEMICONDUCTOR DEVICES

AND CIRCUITS

Lab Manual

for

B. Tech. (ECE & ECM)

Winter 2017-18
 LIST OF EXPERIMENTS
1. Design a circuit to measure the cut-in and reverse breakdown voltages of a diode.
2. Design a circuit to measure the cut-in and regulation region voltages of a Zener
diode.
3. Construct a circuit to convert alternating voltage into unidirectional pulsating
voltage using an uncontrolled single device diode.
4. Construct a circuit to convert alternating voltage into unidirectional voltage using
an uncontrolled two diodes. Also apply the capacitor filter to obtain the smoothened
DC voltage.
5. Construct a circuit to perform controlled clipping of positive half-cycle / negative
half-cycle.
6. Construct a circuit to perform controlled level shifting of positive half-cycle /
negative half-cycle.
7. Design a circuit to measure the operating regions of LED and Photodiode.
8. Construct a circuit to measure and plot the input / output characteristics of a
transistor for calculating h-parameters under CB / CE / CE configurations.
9. Design a circuit to measure and plot the DC and AC Load-Line Analysis of a
Transistor.
10. Construct a circuit to amplify the low level signal using a Transistor as an Amplifier
under CE configuration.
11. Design a circuit to measure and plot the drain and transfer characteristics of a FET
12. Design a circuit to realize logic Gates using CMOS.
 SIMULATION USING PSPICE

Procedure: common to all circuits

1. Open Orcad-capture.

2. Go to File tab and click on "New project" and give an approriate name.

3. Select "Analog or Mixed A/D". Select the Location where you want to save your files.

4. Connect the circuits as per the circuit diagram given in Experiment from the

parts library and save the schematic. Do not connect measuring instruments in the

Orcad- Pspice schematic.

5. Go to Pspice in the menu and select new simulation profile and give appropriate

simulation name and click on create. Simulation settings window will be displayed.

6. Select the appropriate analysis type and set the variables accordingly.

7. Run the simulation using F11 or run command in the PSPICE menu.

8. Obtain the graph corresponding to the experiment.

 EXPERIMENT NO.1

V - I CHARACTERISTICS OF A PN JUNCTION DIODE

AIM:

To determine the V - I characteristics of a PN Junction diode.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Regulated Power supply (0-30V) DC 1

2. PN Junction diode 1N4007 1

3. Resistor 1kΩ 1
(0-100mA)MC,
4. Ammeters 1
(0-250μA)MC
(0-1V) MC,
5. Voltmeter 1
(0-10V)MC
6. Breadboard 1

CIRCUIT DIAGRAM:

Forward Biased PN Junction diode

 Reverse Biased PN Junction diode

MODEL GRAPH:

VI characteristics under Forward Biased PN Junction diode

 VI characteristics under Reverse Biased PN Junction diode

PROCEDURE:

Forward biasing: 1. Connections are made as per the circuit diagram.

2. The supply voltage is increased gradually and
readings of the voltage drop across the diode and
the diode current are noted from voltmeter and
ammeter.
3. Draw the graph between the voltage across the
diode and the current flowing through the diode.
Reverse biasing:

1. Connections are made as per the circuit diagram.

2. The supply voltage is increased gradually and
readings of the voltage drop across the diode and the
diode current are noted from voltmeter and ammeter.
3. Draw the graph between the voltage across the diode
and the current flowing through the diode.
Forward Biased PN Junction diode:
D 1

D 1N 4002

R 1
V1 1k

0Vdc 0

GRAPH:
10mA

8mA

6mA

4mA

2mA

0A
0V 40mV 80mV 120mV 160mV 200mV 240mV 280mV 320mV 360mV 400mV 440mV 480mV 520mV
I(D1)
V(D1:1) - V(D1:2)

Reverse Biased PN Junction diode :

D 1

V+ V-

V1 D 1N 4002 R 1
0Vdc 1k

0
GRAPH:

0.2A

0A

-0.2A

-0.4A

-0.6A

-0.8A

-1.0A
-110V -100V -90V -80V -70V -60V -50V -40V -30V -20V -10V 0V 10V
I(D1)
V(D1:1) - V(D1:2)

Simulation Profile:

DC SWEEP

AXIS SETTING : V(D1:1)-V(D1:2)

RESULT:
Thus the VI characteristics of the forward and reverse biased PN junction
diode were studied.
 EXPERIMENT NO.2
V - I CHARACTERISTICS OF A ZENER DIODE

AIM:

To determine the V - I characteristics of a Zener diode.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Regulated Power supply (0-30V) DC 1

2. Zener diode 5Z6 1

3. Resistor 1kΩ 1
(0-50mA)MC,
4. Ammeters 1
(0-1V) MC,
5. Voltmeter 1
(0-10V)MC
6. Breadboard 1

CIRCUIT DIAGRAM:

Circuit Diagram under Forward Biased Zener diode

 Circuit Diagram under Reverse Biased Zener diode
MODEL GRAPH:

VI characteristic under Forward Biased Zener diode

 VI characteristic under Reverse Biased Zener diode

PROCEDURE:

Forward biasing: 1. Connections are made as per the circuit diagram.

1. The supply voltage is increased gradually and
readings of the voltage drop across the diode and
the diode current are noted from voltmeter and
ammeter.
2. Draw the graph between the voltage across the
diode and the current flowing through the diode.
Reverse biasing:

1. Connections are made as per the circuit diagram.

2. The supply voltage is increased gradually and
readings of the voltage drop across the diode and
the diode current are noted from voltmeter and
ammeter.
3. Draw the graph between the voltage across the diode
and the current flowing through the diode.
RESULT:
Thus the VI characteristics of the forward and reverse biased zener diode were
studied.
 EXPERIMENT NO.3

DIODE APPLICATIONS - HALF WAVE RECTIFIER AND

FULL WAVE RECTIFIER WITH AND WITHOUT FILTER

AIM:
To rectify the given input AC signal and to visualize the output waveform in a
CRO for Half wave and Full wave rectifier with and without filters and to calculate the
ripple factor.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. PN Junction diode 1N4007 4

2. Resistor 1kΩ 1

3. Transformer 230/12V 1

4. Electrolytic Capacitor 1μF,10μF 1

5. Breadboard 1

6. CRO 1

FORMULAE:
Half Wave Rectifier(without filter) Full Wave Rectifier (without filter)

Vrms= Vm/2 Vrms=Vm/√2

Vdc= Vm/Π Vdc= 2Vm/Π

Half and Full Wave Rectifier with filter

V rms = Vrpp / 2√3
Vdc =Vm – (Vrpp/2)

Ripple factor(without filter) γ =’ √((Vrms/Vdc)2-1)

Ripple factor (with filter) γ = V / V
rms dc

Where γ = Ripple factor.

Vdc = average value of voltage
rms = rms value of the ripple voltage.
V
Vrpp = peak to peak ripple voltage.
CIRCUIT DIAGRAM:

Half wave Rectifier without Filter

Half wave Rectifier with Filter

Full wave Rectifier without filter

 Full wave Rectifier with filter
MODEL GRAPH:

Input Supply Voltage

Output Voltage of Half wave Rectifier with and without filter

Output Voltage of Full wave Rectifier with and without filter

Procedure:
1. Connections are made as per the circuit diagram
2. Observe the voltage using CRO across the load resistance with and without filter
capacitor.
3. Repeat step 3 with different values of filter capacitor.
4. Calculate the ripple factor for the obtained waveforms.

GRAPH:

HALF WAVE RECTIFIER:

FULL WAVE RECTIFIER:
SIMULATION PROFILE:

Time domain (Transient)

Run to time: 100ms TSTOP
Add trace: V(D2:2) , V(D2:1)

Result:
Thus the working of the half wave rectifier and full wave bridge rectifier with and
without filter was studied.
 EXPERIMENT NO. 4

CLIPPERS AND CLAMPERS

AIM :-To simulate and obtain the characteristics of clippers and clamper.

PROCEDURE :-

1. Open pspice and all the libraries.

2. Go to place part and choose the various components like diode D1N4002 , AC
source Vsin, 1k ohm resistor and a load resistor RL.
3. Use ‘place wire’ utility to connect all the components.
4. Set the Voff = 0, Vamp = 10, freq = 1000.
5. Now make a neew simulation profile. Select time domain transient and choose
TSTOP as 50 ms.
6. Change the polarity of the diode to obtain the characteristics of +ve and –ve clipper
accordingly.
7. Introduce a capacitor with the AC source to obtain the characteristics of clamper.
8. Change the polarity of the diode to obtain the characteristics of +ve and –ve
clamper accordingly.
9. Run the simulation and obtain the characteristics of clipper circuit.

1. –ve CLIPPER :-

R 1

1k
V V

D 1 R 2
V1 D 1N 4009 1k
VO FF = 0
VAM PL = 10
FR EQ = 1000
0
OUTPUT :-

2. +VE CLIPPER :-

R 1

1k
V V

D 1 R 2
V1 D 1N 4009 1k
VO FF = 0
VAM PL = 10
F R EQ = 1000
0
OUTPUT :-

3. +VE BIASED CLIPPER :-

R 3

1k
V V

D 1 R 2
V1 D 1N 4009 1k
VO FF = 0
VAM PL = 10 V2
FR EQ = 1000

4Vdc

0
 OUTPUT :-

10V

0V

-10V
0s 5ms 10ms 15ms 20ms 25ms 30ms 35ms 40ms 45ms 50ms
V(V1:+) V(R4:2)
Time

4. –VE BIASED CLIPPER

R 1

1k
V V

D 1 R 2
V1 D 1N 4009 1k
VO FF = 0 V2
VAM PL = 10 4Vdc
F R EQ = 1000

OUTPUT :-
10V

0V

-10V
0s 5ms 10ms 15ms 20ms 25ms 30ms 35ms 40ms 45ms 50ms
V(V1:+) V(R4:2)
Time
 5. WAVE SHAPING APPLICATION :-

R 1

1k
V D 1N 4009 V

D 1 R 2
V1 D 1N 4009 D 2 1k
VO FF = 0 V2
VAM PL = 10 V3
FR EQ = 1000 4Vdc 4Vdc

OUTPUT :-
 6. –VE CLAMPER :-

C 1

V 470U V

D 1 R 2
V1 D 1N 4009 1k
VO F F = 0
VAM PL = 10
F R EQ = 1000

OUTPUT :-
 7. +VE CLAMPER :-

C 1

V 470U V

D 1 R 2
V1 D 1N 4009 1k
VO FF = 0
VAM PL = 10
FR EQ = 1000

OUTPUT :-
 8. +VE BIASED CLAMPER :-

C 1

V 470U V

D 1 R 2
V1 D 1N 4009 1k
VO FF = 0
VAM PL = 10 V2
F R EQ = 1000 4Vdc

0
OUTPUT :-
 9. -VE BIASED CLAMPER :-

C 1

470u
V V
D 2
D 1N 4002 R 2
V1 1k
VO FF = 0 V3
VAM PL = 10 4Vdc
F R EQ = 1000

RESULT: - The above clipper and clamper circuits are verified using Orcad pSPICE.
HARDWARE EXPERIMENTS
 Metal-Oxide-Semiconductor Field Effective Transistor (MOSFET) Characteristics

AIM:
To plot the transfer and output characteristics of a metal-oxide-semiconductor field
effective transistor in common source configuration.

APPARATUS:

1. DC power supply to get (0-5) V and (0-10) V

2. MOSFET IRF150-1
3. Resistor 100Ω-1
4. DC ammeter (0-200mA)-1
5. DC voltmeter (0-10V)-2
6. Bread board and connecting wires-1set

PROCEDURE:
TO FIND THE TRANSFER CHARACTERISTICS:
 Connect the circuit as in the circuit diagram.
 Keep VGG and VDD in zero volts before giving the supply.
 Set VDS=5 volt by varying VDD and vary the VGG smoothly with fine control such
that drain current ID varies. Find out the Threshold Voltage.
 Repeat the experiment for VDS= 10 volts.
 Draw the graph between VGS vs ID for 2 different values of VDS.

TO FIND THE OUTPUT CHARACTERISTICS:

1. Start VGG and VDD from zero volts.
2. Set the VGS= VTN + 0.2 V by using VGG such that, VDS changes in steps of 1V from
zero upto 10V, note down the corresponding drain current ID for each step in the
tabular form.
3. Repeat the experiment for VGS= VTN + 0.4 V and VGS= VTN + 0.6 V.
4. Draw the graph between ID vs VDS for 3 different values of VGS.

CIRCUIT DIAGRAM:

MODEL GRAPH: (Transfer characteristics for a couple of VDS value) and (Output characteristics for 3 values of
VGS)
TABULAR COLUMN:
TRANSFER CHARACTERISTICS: (Find out the threshold voltage)
VDS=5 V VDS= 10 V
S.No VGS ID (mA) VGS ID (mA)
1
2
3
4
5
6
7
8
9
10
11

OUTPUT CHARACTERISTICS:

S.No VGS= VTN + 0.2 VGS= VTN + 0.4 VGS= VTN + 0.6
VDS ID (mA) VDS ID (mA) VDS ID (mA)
1
2
3
4
5
6
7
8
9
10
11
Caution : Student must not touch the MOSFET as it is a power transistor and excessive heat would be
produced on the drain terminal.
Values may differ across devices and hence care should be taken to avoid thermal runaway
problem.
 Analysis of CE amplifier
Circuit Configuration
DC analysis:

Perform the DC analysis and estimate Vb,Ve and Vc.

Transient analysis:
Set a sinusoidal input with amplitude of 0.1 v and frequency 100Hz and run transient analysis.

AC Analysis
Perform AC analysis and find
1.select ac analysis in the simulation command
2.keep type of speed in decade
3.number of points:101
4.start frequency:100
5.Stop frequency:100M
6.Run the simulation and calculate
Gain:
Bandwidth=f2-f1
Maximum voltage:
AC Analysis output: