Infrared Light Emitting Diode

OP280

Features:
x High power GaAIAs—OP280, 880 nm center wavelength
x PLCC-2 package style
x Wide beam angle 100°
x Suitable for single device or array applications

Description:
The OP280 is a GaAIAs infrared LED mounted in a plastic leadless PLCC-2 SMD package with a flat lens window
that allows a wide beam angle. The PLCC-2 packaging is suitable for single device or array applications. The
OP280 Series LEDs is mechanically and spectrally matched to OP580 series phototransistors.

Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.

Ordering Information
Applications:
Part LED Peak Total Beam
x Non-contact position sensing x Machine automation Number Wavelength Angle
x Datum detection x Optical encoding OP280 880 nm 100°

Anode Notch

Pin # LED
1 Anode
2 Cathode

RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.2.1 10/07
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Page 1 of 3
Infrared Light Emitting Diode
OP280

Absolute Maximum Ratings (TA=25° C unless otherwise noted)

Storage Temperature Range -40o C to +100o C
Operating Temperature Range -25o C to +85o C
Reverse Voltage 2.0 V
Peak Forward Current [ 1µs pulse width, 300 pps] 1.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)
Power Dissipation 130 mW (2)

Electrical Characteristics (TA = 25rC unless otherwise noted)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode
EE (APT) Apertured Radiant Incidence 0.5 - - mW/cm2 IF = 20 mA(3)

VF Forward Voltage - - 1.50 V IF = 50 mA

IR Reverse Current - - 100 µA VR= 2.0 V
Wavelength at Peak Emission
P
OP280 - 890 - nm IF = 20 mA
HP Emission Angle at Half Power Points - 100 - Degree IF = 20 mA
tr Output Rise Time - - 500 ns IF(PK)=100 mA, PW=10 µs, and
tf Output Fall Time - - 500 ns D.C.=10.0%

Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
3. EE(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and
centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within
Relative Radiant Intensity
vs. Angular Displacement
100%

80% 23
Relative Radiant Intensity

60%

40%

20%

0%
-90 -60 -30 0 30 60 90
Angular Displacement (Degrees)

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Issue A.2.1 10/07 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com
Infrared Light Emitting Diode
OP280

OP280 Aperture Radiant Incidence

vs. Forward Current
Power Out vs. Forward Current vs. Forward Voltage
vs. Temperature 1.8 1.50
4.0
1.6 1.45
3.5
E e -R el ati ve
-40°C 1.4
1.40

V f -Forward Voltage - Volts

P ower Output

3.0
Relative Power Output

1.2
1.35

Ee -m W/cm ^2
2.5
1.0
2.0 1.30
0.8
1.5 1.25
0.6
1.0 100°C
1.20
0.4
0.5
0.2 1.15

0.0
0 5 10 15 20 25 30 35 40 45 50
0.0 1.10
0 5 10 15 20 25 30 35 40 45 50
Forward Current (mA)
IF -Forward Current- (mA)
Forward Voltage vs. Forward Current
vs. Temperature
1.6

1.5
Typical Forward Voltage

1.4

1.3

1.2 -40°C
-20°C
0°C
+20°C
1.1 +40°C
+60°C
+80°C
+100°C
1
0 5 10 15 20 25 30 35 40 45 50
Forward Current (mA)

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.2.1 10/07
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Page 3 of 3