DG211, DG212: SPST 4-Channel Analog Switches Features
DG211, DG212: SPST 4-Channel Analog Switches Features
IN3
DG212CY 0 to 70 16 Ld SOIC M16.15
D3
S4
Pinout
IN4
DG211, DG212
(PDIP, SOIC) D4
TOP VIEW
8 9 IN3 D2
IN4
S3
IN3
D3
S4
IN4
D4
TRUTH TABLE
LOGIC DG211 DG212
0 ON OFF
1 OFF ON
Logic “0” ≤0.8V, Logic “1” ≥ 2.4V
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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DG211, DG212
Schematic Diagram
DG211 (1/4 AS SHOWN)
TTL IN
-15V
GND
+15V
-15V
+5V
V-
VL
-15V
+15V
IN OUT
2
DG211, DG212
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
(NOTE 2) (NOTE 3)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
DYNAMIC CHARACTERISTICS
tOFF1 - 360 - ns
tOFF2 - 450 - ns
Input Current with Voltage High, IIH VIN = 2.4V -1.0 -0.0004 - µA
Source OFF Leakage Current, IS(OFF) VIN = 2.4V (DG211) VS = 14V, VD = -14V - 0.01 5.0 nA
VIN = 0.8V (DG212)
VS = -14V, VD = 14V -5.0 -0.02 - nA
Drain ON Leakage Current, ID(ON) VIN = 0.8V (DG211) VS = VD = 14V - 0.1 5.0 nA
(Note 4) VIN = 2.4V (DG212)
VS = VD = -14V -5.0 -0.15 - nA
3
DG211, DG212
(NOTE 2) (NOTE 3)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
NOTES:
2. The algebraic convention whereby the most negative value is a minimum, and the most positive is a maximum, is used in this data sheet.
3. For design reference only, not 100% tested.
4. ID(ON) is leakage from driver into ON switch.
VS
5. OFF Isolation = 20 log -------
- , V = Input to OFF switch, V D = output .
VD S
5V 15V
VL V+
LOGIC† SWITCH
INPUT (IN1) INPUT SWITCH
50% S1 D1 OUTPUT
tr < 20ns VO
0V VS = 10V
tf < 20ns
RL CL
tOFF1 IN1 1kΩ
SWITCH LOGIC 35pF
V
INPUT S INPUT
90% 90%
4
DG211, DG212
Die Characteristics
DIE DIMENSIONS: PASSIVATION:
2159µm x 2235µm Type: PSG/Nitride
PSG Thickness: 7kÅ ±1.4kÅ
METALLIZATION:
Nitride Thickness: 8kÅ ±1.2kÅ
Type: Al
Thickness: 10kÅ ±1kÅ WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
PIN 1 PIN 16
IN 1 IN 2
PIN 2 PIN 15
D1 D2
PIN 3 PIN 14
S1 S2
PIN 4 PIN 13
V- V+ (SUBSTRATE)
PIN 5 PIN 12
GND VL
PIN 11
PIN 6 S3
S4
PIN 7
D4
5
DG211, DG212
6
DG211, DG212
1 2 3
A 0.0532 0.0688 1.35 1.75 -
L
A1 0.0040 0.0098 0.10 0.25 -
SEATING PLANE B 0.013 0.020 0.33 0.51 9
-A- C 0.0075 0.0098 0.19 0.25 -
D A h x 45o
D 0.3859 0.3937 9.80 10.00 3
-C- E 0.1497 0.1574 3.80 4.00 4
α e 0.050 BSC 1.27 BSC -
e A1
C H 0.2284 0.2440 5.80 6.20 -
B 0.10(0.004)
h 0.0099 0.0196 0.25 0.50 5
0.25(0.010) M C A M B S
L 0.016 0.050 0.40 1.27 6
N 16 16 7
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of α 0o 8o 0o 8o -
Publication Number 95. Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
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