NGD8201N

Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and http://onsemi.com
high current switching is required.
Features 20 Amps
• Ideal for Coil−on−Plug and Driver−on−Coil Applications 400 Volts
• DPAK Package Offers Smaller Footprint for Increased Board Space VCE(on) = 1.3 V @
• Gate−Emitter ESD Protection IC = 10 A, VGE . 4.5 V
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load C

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices G RG
• Low Saturation Voltage
• High Pulsed Current Capability RGE

• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)

Applications E

• Ignition Systems MARKING

4 DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
YWW
Rating Symbol Value Unit 1 2 NGD
3
Collector−Emitter Voltage VCES 440 V 8201N
DPAK
Collector−Gate Voltage VCER 440 V
CASE 369C NGD8201N= Device Code
Gate−Emitter Voltage VGE "15 V STYLE 7 Y = Year
Collector Current−Continuous IC 20 ADC WW = Work Week
@ TC = 25°C − Pulsed 50 AAC

Continuous Gate Current IG 1.0 mA ORDERING INFORMATION

Transient Gate Current (t ≤ 2 ms, IG 20 mA Device Package Shipping †
f ≤ 100 Hz)
NGD8201NT4 DPAK 2500 / Tape & Reel
ESD (Charged−Device Model) ESD 2.0 kV †For information on tape and reel specifications,
including part orientation and tape sizes, please
ESD (Human Body Model) ESD kV
refer to our Tape and Reel Packaging Specification
R = 1500 W, C = 100 pF 8.0
Brochure, BRD8011/D.
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C PD 125 W
Derate above 25°C 0.83 W/°C

Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

 Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

January, 2005 − Rev. 4 NGD8201N/D
 NGD8201N

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy EAS mJ
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C 250
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C 200
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C 180
Reverse Avalanche Energy EAS(R) mJ
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C 2000

THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) TL 275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 V
IC = 10 mA TJ = −40°C to 175°C 390 415 440
Zero Gate Voltage Collector Current ICES VGE = 0 V, TJ = 25°C 0.1 1.0 mA
VCE = 15 V

TJ = 25°C 0.5 1.5 10 mA

VCE = 200 V, TJ = 175°C 1.0 25 100*
VGE = 0 V
TJ = −40°C 0.4 0.8 5.0
Reverse Collector−Emitter Clamp BVCES(R)
( ) TJ = 25°C 30 35 39 V
Voltage
IC = −75 mA TJ = 175°C 35 39 45*
TJ = −40°C 30 33 37
Reverse Collector−Emitter Leakage ICES(R)
( ) TJ = 25°C 0.05 0.1 0.5 mA
Current
VCE = −24 V TJ = 175°C 1.0 5.0 10*
TJ = −40°C 0.005 0.01 0.1
Gate−Emitter Clamp Voltage BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V
Gate−Emitter Leakage Current IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA
Gate Resistor (Optional) RG TJ = −40°C to 175°C 70 W
Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGE(th)
( ) TJ = 25°C 1.5 1.8 2.1 V
IC = 1
1.0
0 mA
mA,
VGE = VCE TJ = 175°C 0.7 1.0 1.3
TJ = −40°C 1.7 2.0 2.3*
Threshold Temperature Coefficient 4.0 4.6 5.2 mV/°C
(Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

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 NGD8201N

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage VCE(on)
( ) TJ = 25°C 0.95 1.15 1.35 V
IC = 6.5 A, TJ = 175°C 0.7 0.95 1.15
VGE = 3.7 V
TJ = −40°C 1.0 1.3 1.40
TJ = 25°C 0.95 1.25 1.45
IC = 9.0 A, TJ = 175°C 0.8 1.05 1.25
VGE = 3.9 V
TJ = −40°C 1.1 1.4 1.5
TJ = 25°C 0.85 1.15 1.4
IC = 7.5 A, TJ = 175°C 0.7 0.95 1.2
VGE = 4.5 V
TJ = −40°C 1.0 1.3 1.6*
TJ = 25°C 1.0 1.3 1.6
IC = 10 A, TJ = 175°C 0.8 1.05 1.4
VGE = 4.5 V
TJ = −40°C 1.1 1.4 1.7*
TJ = 25°C 1.15 1.45 1.7
IC = 15 A, TJ = 175°C 1.0 1.3 1.55
VGE = 4.5 V
TJ = −40°C 1.25 1.55 1.8*
TJ = 25°C 1.3 1.6 1.9
IC = 20 A, TJ = 175°C 1.2 1.5 1.8
VGE = 4.5 V
TJ = −40°C 1.4 1.75 2.0*
Forward Transconductance gfs IC = 6.0 A, TJ = 25°C 10 18 25 Mhos
VCE = 5.0 V

DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1100 1300 1500 pF
Output Capacitance COSS f = 10 kHz, VCE = 25 V TJ = 25°C 70 80 90
Transfer Capacitance CRSS 18 20 22
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive) td(off)
( ) TJ = 25°C 6.0 8.0 10 mSec
VCC = 300 V, IC = 9.0 A TJ = 175°C 6.0 8.0 10
RG = 1.0
1 0 kW
kW, RL = 33 W,
W
Fall Time (Resistive) tf VGE = 5.0 V TJ = 25°C 4.0 6.0 8.0
TJ = 175°C 8.0 10.5 14
Turn−Off Delay Time (Inductive) td(off)
( ) TJ = 25°C 3.0 5.0 7.0
VCC = 300 V, IC = 9.0 A TJ = 175°C 5.0 7.0 9.0
RG = 1.0
1 0 kW
kW,
Fall Time (Inductive) tf L = 300 m
mH,, VGE = 5.0 V TJ = 25°C 1.5 3.0 4.5
TJ = 175°C 5.0 7.0 10
Turn−On Delay Time td(on)
( ) TJ = 25°C 1.0 1.5 2.0
VCC = 14 V, IC = 9.0 A TJ = 175°C 1.0 1.5 2.0
RG = 1
1.0
0 kW
kW, RL = 1.5
1 5 W,
W
Rise Time tr VGE = 5.0 V TJ = 25°C 4.0 6.0 8.0
TJ = 175°C 3.0 5.0 7.0
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

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 NGD8201N

TYPICAL ELECTRICAL CHARACTERISTICS

400 30
VCC = 14 V
350
TJ = 25°C VGE = 5.0 V

IA, AVALANCHE CURRENT (A)

25
300 RG = 1000 W
SCIS ENERGY (mJ)

20 L = 1.8 mH
250
TJ = 175°C
L = 3.0 mH
200 15

150
10
L = 10 mH
100
VCC = 14 V
5
50 VGE = 5.0 V
RG = 1000 W
0 0
0 2 4 6 8 10 −50 −25 0 25 50 75 100 125 150 175
INDUCTOR (mH) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current
vs. Temperature
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

2.0 60
IC = 25 A VGE = 10 V 4.5 V
1.75 IC, COLLECTOR CURRENT (A)
50 5V 4V
IC = 20 A
1.5 TJ = 175°C
IC = 15 A 40
1.25
IC = 10 A 3.5 V
1.0 30
IC = 7.5 A
0.75 3V
20
0.5
2.5 V
10
0.25 VGE = 4.5 V

0.0 0
−50 −25 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 8
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 3. Collector−to−Emitter Voltage vs. Figure 4. Collector Current vs.

Junction Temperature Collector−to−Emitter Voltage

60 60
VGE = 10 V 4.5 V VGE = 10 V 4.5 V
4V 4V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

50 50
5V 5V
40 40
TJ = 25°C 3.5 V TJ = −40°C
3.5 V
30 30

20 3V 20
3V
10 10
2.5 V
2.5 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector Current vs. Figure 6. Collector Current vs.

Collector−to−Emitter Voltage Collector−to−Emitter Voltage

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 NGD8201N

TYPICAL ELECTRICAL CHARACTERISTICS

45 10000

COLLECTOR TO EMITTER LEAKAGE

VCE = 5 V
40
IC, COLLECTOR CURRENT (A)

1000
35 VCE = −24 V
30

CURRENT (mA)
100
25
20
10
TJ = 25°C
15 VCE = 200 V
10 1.0
5 TJ = 175°C
TJ = −40°C
0 0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 −50 −25 0 25 50 75 100 125 150 175
VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage

Current vs. Temperature

2.50 10000
GATE THRESHOLD VOLTAGE (V)

2.25
Mean Ciss
Mean + 4 s 1000
2.00
C, CAPACITANCE (pF)

1.75
Mean − 4 s Coss
1.50 100

1.25
Crss
1.00 10
0.75
0.50 1.0
0.25
0 0.1
−50 −25 0 25 50 75 100 125 150 175 0 5 10 15 20 25
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 9. Gate Threshold Voltage vs. Figure 10. Capacitance vs.

Temperature Collector−to−Emitter Voltage

12 12
VCC = 300 V
10 10 VGE = 5.0 V
tfall RG = 1000 W
SWITCHING TIME (ms)
SWITCHING TIME (ms)

IC = 9.0 A
8 8
tdelay L = 300 mH
tdelay
6 6
VCC = 300 V tfall
4 VGE = 5.0 V 4
RG = 1000 W
2 IC = 9.0 A 2
RL = 33 W
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Resistive Switching Fall Time vs. Figure 12. Inductive Switching Fall Time vs.
Temperature Temperature

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 NGD8201N

R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

100
Duty Cycle = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
D CURVES APPLY FOR POWER
P(pk) PULSE TRAIN SHOWN
READ TIME AT t1
0.1 t1
Single Pulse t2 TJ(pk) − TA = P(pk) RqJA(t)
DUTY CYCLE, D = t1/t2 For D=1: RqJC X R(t) for t ≤ 0.1 s
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t,TIME (S)

Figure 13. Minimum Pad Transient Thermal Resistance

(Non−normalized Junction−to−Ambient)
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

10

1 Duty Cycle = 0.5

0.2
D CURVES APPLY FOR POWER
0.1 P(pk)
PULSE TRAIN SHOWN
0.1 0.05 t1 READ TIME AT t1
0.02 t2 TJ(pk) − TA = P(pk) RqJC(t)

0.01 DUTY CYCLE, D = t1/t2

Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
t,TIME (S)

Figure 14. Best Case Transient Thermal Resistance

(Non−normalized Junction−to−Case Mounted on Cold Plate)

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 NGD8201N

PACKAGE DIMENSIONS

DPAK
CASE 369C−01
ISSUE O
NOTES:
−T− SEATING 1. DIMENSIONING AND TOLERANCING
PLANE PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3 G 0.180 BSC 4.58 BSC
U H 0.034 0.040 0.87 1.01
K J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
F J R 0.180 0.215 4.57 5.45
STYLE 7:
L PIN 1. GATE S 0.025 0.040 0.63 1.01
H 2. COLLECTOR U 0.020 −−− 0.51 −−−
3. EMITTER V 0.035 0.050 0.89 1.27
D 2 PL 4. COLLECTOR Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T

SOLDERING FOOTPRINT

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

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 NGD8201N

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