J. Nano- Electron. Phys.

2011 SumDU
3 (2011) No3, P. 84-92 (Sumy State University)

PACS numbers: 85.30.De, 84.60.Bk

MODELING OF THE ELECTRICAL CHARACTERISTICS OF THE

SILICON-BASED SOLAR CELL

S.L. Khrypko, G.K. Zholudev

Classic Private University,

70-B, Zhukovskogo Str., 69002 Zaporizhzhia, Ukraine
E-mail: [email protected]

In this paper, we have proposed the simulation model of the solar cell electrical cha-
racteristics, which gives the possibility to determine the dependences of its electrical
characteristics on the environmental conditions, temperature and solar insolation, as
well as on the change in the parameters of diode model, series and shunt resistances.
Calculations are performed using the Matlab environment.
Keywords: MODEL, SOLAR CELL, DIODE, OPTIONS, MATLAB.
(Received 05 April 2011, in final form 12 October 2011, online 05 November 2011)

1. INTRODUCTION
In connection with the aggravation of the problem connected with the fossil
fuel shortage, lack of proper regulation of the prices, imbalance of ecosystem,
developments in the search of high-efficiency and ecologically clean alterna-
tive energy sources are actively carried out. Those energy sources, which are
based on the photoelectric solar energy conversion, can be considered as the
most promising among others [1]. For solar energy conversion into electrical
one, photoelectric systems (PhES), which generate constant electrical current
during sunbeam illumination and convert it into alternating current using
the inverter, are used. Thus, electric energy can be used for local load supply
or redistributed with general network. Photoelectric units (PhEU), which are
assembled of separate photoelectric devices (PhED) [2], are one of the PhES
components.
In the sequel, we will call PhED, which converts energy of sunlight photons
into electrical one, solar cell (SC). Voltage 0,5-0,7 V [3] is generated under
the action of light in the p-n junction. SC produced based on monocrystalline
silicon have better price-efficiency-operating time ratio among similar elements
of serial production.
In the work, we report about the simulation model and calculations of the
electrical characteristics of SC produced using the single-diode model.

2. THE SOLAR CELL MODEL

Energy conversion in SC is based on the photoelectric effect which appears
in non-uniform semiconductor structures under the action of light radiation.
The specified non-uniformity of SC structure (p-n junction) can be obtained,
for example, using doping of semiconductor by different impurities (donor or
acceptor). Light quanta with the energy exceeding the band gap of semicon-
ductor form pairs of charge carriers [1]. Carriers, which were formed on the

84
 MODELING OF THE ELECTRICAL CHARACTERISTICS OF … 85

distance less than the diffusion length, are separated by the internal field (see
Fig. 1); and electrons move toward the n and holes – toward the p junction
region. Thus, potential difference arises on metal electrodes and generates an
electrical current through the p-n junction. Potential barrier in the structure
is decreased that leads to the electrical current from n to p region.

Fig. 1 – Solar cell structure

Calculations of the SC electrical characteristics are carried out using two
main models of the electrical circuit, namely, single-diode model or two-diode
model [4]. In this work, we report about modeling and calculations of PhEU
using Shockley equation for diode. For modeling we have chosen the single-
diode model (Fig. 2). Outward current (IPH) from the source (G) is proportio-
nal to the incident light quantity. In the absence of illumination, SC operates
as a usual diode, i.e. current does not pass through it. But after connection
with the external source, it generates the diode current (ID) or dark current.
The main parameters, which describe the SC model, are the following: satu-
ration current ²0 f(T), photocurrent IPH f(T), open-circuit voltage, series
resistance RS, shunt resistance RSH, ideality coefficient of the volt-ampere
characteristic (VAC) n. For perfect SC RS RSH 0 [5].

Fig. 2 – SC equivalent circuit by the single-diode model

For calculation of the SC electrical characteristics we will use two main
parameters, namely, short-circuit current ISC) and open-circuit voltage (UOC).
At contact closure in the external circuit (R 0), outward current is deter-
mined as the short-circuit current IPH ISC. For the open external circuit
(R ), current I 0, and voltage in the p-n junction is defined as the
open-circuit voltage (UOC) [6].
86 S.L. KHRYPKO, G.K. ZHOLUDEV

SC total current on the load is determined using the following equation:

I IPH – ID – ISH. SC VAC by the single-diode model and taking into account
shunt and series resistances, takes the form of [7]

V IRS V IRS
I IPH I0 exp q 1 , (1)
nkT RSH

where V is the voltage; I is the current passing through the load; T is the
temperature; n is the ideality coefficient of the rectifying p-n junction; I0 is
the saturation current.
Typical SC VAC is shown in Fig. 3. Three main parameters can be singled
out there: short-circuit current ISC, open-circuit voltage VOC, and maximum
power Pmax [8].

Fig. 3 – Typical SC VAC

In the point V VOC of the VAC one can see that I ISC 0. After subs-
titution of these parameters into expression (1) we obtain

qVOC VOC
0 IPH I0 exp 1 (2)
n0 kT RSH

or
qVOC VOC . (3)
IPH I0 exp 1
n0kT RSH

In the point I ISC of the VAC, expression (1) takes the following form:

qVOC qISC RS RS VOC

0 I0 exp exp ISC 1 , (4)
n0 kT nkT RSH RSH

where n0 1 if almost all photocurrent passes through the p-n junction (dif-
fusion current); n0 2 if minor current passes through the p-n junction (low
injection level).
In the point I Imax, V Vmax on the VAC (Fig. 3) power Pmax Imax Vmax,
which is sent to the load, takes the maximum value, and expression (1) is
transformed into the following one:
 MODELING OF THE ELECTRICAL CHARACTERISTICS OF … 87

Vmax Imax RS Vmax Imax RS

Imax IPH I0 exp q 1 (5)
nmax kT RSH
or
qVOC Vmax Imax RS RS VOC Vmax , (6)
0 I0 exp exp q Imax 1
n0 kT nmax kT RSH RSH
where nmax is the ideality coefficient in the maximum point.
Slope of the SC VAC in the point V VOC can be described using the fol-
lowing equation:
qI0 qVOC 1 1 , (7)
exp
n0 kT n0 kT RSo RS RSH
where n0 and ns are the diode ideality coefficients in the open-circuit and the
dV
short-circuit points, respectively; RSo V VOC [9]; and slope of the VAC in
dI
the point I – ISC
qI0 qISC RS 1 1
exp , (8)
nskT nskT RSHo RS RSH
dV
where RSHo I ISC [9]. In action, exp(qVOC/n0kT) >> exp(qISCRS/nskT).
dI
With the aid of the transformations of equations (2)-(8), we obtain
ISC RS qISC RS
IPH ISC I0 exp 1 , (9)
RSH nmax kT

where I0 (ISC – VOC/RSH) exp(– qVOC/nmaxkT) is the saturation current; RSH

RSH0 – RS is the shunt resistance; RS RS0 – exp(– qVOC/nmaxkT) nskT/qI0
is the series resistance; and

Vmax Imax RS VOC q

nmax
ISC Imax 1 RS RSH VOC Vmax RSH
kT ln
ISC 1 RS RSH VOC RSH

is the quality factor.

Photons incident on the SC surface generate photocurrent
IPH [IPH +KI(T – 298)]G, (10)
where current ISC is directly proportional to the light intensity G (W/m2)
[10]: ISC G G / G0 ISC G0 ; G0 1000 W/m2 is the power of solar radiation
at the atmospheric mass AM 1,5 and temperature 298 K; T is the SC current
temperature; KI ISC T ISC 25 T 25 (A/ C) is the temperature coeffi-
cient of the short-circuit current. Temperature dependence of the photocur-
rent is linear.
88 S.L. KHRYPKO, G.K. ZHOLUDEV

We have to note that the reverse saturation current depends on the SC

temperature by the formula [11]
3n
T 1 1
I0 T I0 298 exp qEg nk , (11)
298 T 298

where Eg is the band gap of semiconductor (eV).

Maximum power generated by the SC can be estimated using the following
expression [8]:
Pmax Imax Vmax FF ISC VOC , (12)

where FF is the duty factor of SC VAC.

Calculations of the SC characteristics were performed using the Matlab
environment. Silicon photoconverters K5M165L-N of the class L263 with the
parameters presented in Table 1 were used for the modeling. Output parame-
ters of the SC were measured by the standard conditions: G0 1000 W/m2;
ÀÌ 1,5; Ò 298 K.
Table 1 – SC output parameters
Parameter Designation Value
Maximum power Pmax 2,63 0,03 W
Short-circuit current ISC 4,77 A
Open-circuit voltage VOC 0,62 V
Maximum current Imax 4,71 A
Maximum voltage Vmax 0,53 V

3. INFLUENCE OF RS AND RSH

According to Fig. 2, main losses of the electrical power occur on the resistan-
ces RS and RSH. So, increase in the series resistance RS leads to the abrupt
degradation of the VAC shape and reduction in the SC output power (see
Fig. 4, 5). This can be observed in the increase in the curve slope near point
VOC. At the same time, decrease in the shunt resistance RSH from 1K to 10
influences slightly the VAC shape (Fig. 6, 7). Ideality coefficient of the VAC
is equal to nmax 1,22. Thus, to increase the SC output power it is necessary
to provide the increase in RSH and decrease in RS.
Influence of the light intensity of the SC surface (G). As follows from the
expression (10), dependence of the photocurrent IPH on the insolation level
at constant temperature is directly proportional. Results of the G influence
on the SC characteristics are represented in Fig. 8, 9. One can see that with
the increase in the insolation level, the short-circuit current increases and the
output power grows. This can be explained by the logarithmic dependence of
the open-circuit voltage on the solar intensity, as well as of the short-circuit
current on the ray energy. Calculations show that with the increase in the
light intensity ISC and VOC increase, but change in the open-circuit voltage
is not so substantial as in the short-circuit current.
MODELING OF THE ELECTRICAL CHARACTERISTICS OF … 89

Fig. 4 – I-V characteristic of the SC at different values of RSH

Fig. 5 – P-V characteristic of the SC at different values of RSH

Fig. 6 – I-V characteristic of the SC at different values of RS

90 S.L. KHRYPKO, G.K. ZHOLUDEV

Fig. 7 – P-V characteristic of the SC at different values of RS

Fig. 8 – I-V characteristic of the SC at different values of the temperature

4. INFLUENCE OF THE TEMPERATURE

Increase in the SC temperature is manifested in the following: in a slight
increase in the short-circuit current in accordance with the equation (10); in
increase in the saturation current according to the equation (11); in linear
drop of the open-circuit voltage in compliance with the dependence
VOC Eg q ln T 3 / ISC [3].
Calculations resulted in the following values: temperature coefficient of the
short-circuit current is equal to KI 0,0027 A/ C; temperature coefficient of
the open-circuit voltage is equal to KV 0,074 V/ C. Results of the tempe-
rature effect on the SC characteristics are illustrated in Fig. 10, 11.
 MODELING OF THE ELECTRICAL CHARACTERISTICS OF … 91

Fig. 9 – P-V characteristic of the SC at different values of the temperature

Fig. 10 – I-V characteristic of the SC at different lighting

Fig. 11 – P-V characteristic of the SC at different lighting

92 S.L. KHRYPKO, G.K. ZHOLUDEV

5. CONCLUSIONS
Based on the developed model, sufficiently precise calculations of the SC para-
meters were carried out using the Matlab environment. Obtained I-V and P-V
characteristics showed correct confirmed dependences of the SC on the series
and shunt resistances, as well as on the influence of solar radiation and tem-
perature. The model can be used for the calculation and analysis of the SC,
solar units, and solar cell systems.

REFERENCES
1. V.I. Striha, S.S. Kil’chitskaya, Solnechnye elementy na osnove kontakta metall –
poluprovodnik (Sankt-Peterburg: Energoatomizdat: 1991).
2. N. Hamrouni, A. Cherif, Int. J. Electrical Power Eng. 1, 307 (2007).
3. A. Farenbruh, R. Byub, Solnechnye elementy: Teoriya i eksperiment (M.: Energo-
atomizdat: 1987).
4. J.A. Gow, C.D. Manning, IEE Proc. Elec. Power Appl. 146, 193 (1999).
5. N. Hatziargyriou, M. Donnelly, S. Papathanassiou, J.A. Pecas-Lopes, J. Usaola,
R. Lasseter, A. Efthymiadis, K. Karoui, S. Arabi, M. Takasaki, H. Chao, Electra
195, 54 (2001).
6. Gilbert M. Masters, Renewable and efficient electric power systems (New Jersey:
John Wiley & Sons, Inc.: 2004).
7. M. Dai, M.N. Marwali, J.W. Jung, A. Keyhani, Proc. IEEE PES Power Syst. Conf.
Expo (PSCE 04) 1, 398 (2004).
8. M.M. Koltun, Solnechnye elementy (M.: Nauka: 1987).
9. Q.X. Jia, K. Ebihara, T. Ikegami, Phil. Mag. B 72, 375 (1995).
10. S. Nema, R.K. Nema, G. Agnihotri, Int. J. Energy and Environment 1, 487 (2010).
11. G. Walker, Journal of Electrical & Electronics Engineering, Australia 21 No1, 49
(2001).