2SC2855, 2SC2856

Silicon NPN Epitaxial

ADE-208-1079 (Z)
1st. Edition
Mar. 2001

Application

• Low frequency low noise amplifier

• Complementary pair with 2SA1190 and 2SA1191

Outline

TO-92 (1)

1. Emitter
2. Collector
3. Base

3
2
1

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2SC2855, 2SC2856

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SC2855 2SC2856 Unit
Collector to base voltage VCBO 90 120 V
Collector to emitter voltage VCEO 90 120 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 100 100 mA
Emitter current IE –100 –100 mA
Collector power dissipation PC 400 400 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

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 2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855 2SC2856
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 90 — — 120 — — V I C = 10 µA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 90 — — 120 — — V I C = 1 mA, RBE =
breakdown voltage
Emitter to base V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0
breakdown voltage
Collector cutoff current I CBO — — 0.1 — — 0.1 µA VCB = 70 V, IE = 0
Emitter cutoff current I EBO — — 0.1 — — 0.1 µA VEB = 2 V, IC = 0
1
DC current transfer ratio hFE* 250 — 800 250 — 800 VCE = 12 V, IC = 2 mA*2
Collector to emitter VCE(sat) — 0.05 0.10 — 0.05 0.10 V I C = 10 mA, IB = 1 mA*2
saturation voltage
Base to emitter saturation VBE(sat) — 0.7 1.0 — 0.7 1.0 V
voltage
Gain bandwidth product fT — 310 — — 310 — MHz VCE = 6 V, IC = 10 mA
Collector output Cob — 3 — — 3 — pF VCB = 10 V, IE = 0,
capacitance f = 1 MHz
Noise figure NF — 0.15 1.5 — 0.15 1.5 dB VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 1 kHz
— 0.2 2.0 — 0.2 2.0 dB VCE = 6 V, IC = 0.1 mA,
Rg = 10 kΩ, f = 10 Hz
Noise voltage referred to en — 0.7 — — 0.7 — nV/√Hz VCE = 6 V, IC = 10 mA,
input Rg = 0, f = 1 kHz
Notes: 1. The 2SC2855 and 2SC2856 are grouped by h FE as follows.
2. Pulse test
D E
250 to 500 400 to 800

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2SC2855, 2SC2856

Maximum Collector Dissipation Curve Typical Output Characteristics

600 20
26
Collector Power Dissipation PC (mW)

24
16 22

Collector Current IC (mA)

20
400

PC
12 18

=
16

40
0
14

m
W
8 12
200 10
8
4 6
4
2 µA
IB = 0
0 50 100 150 0 20 40 60 80 100
Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)

Typical Output Characteristics Typical Transfer Characteristics

10
18 100 VCE = 6 V
Pulse
8 16
Collector Current IC (mA)
Collector Current IC (mA)

14 Ta = 75°C
6 12 10

10 25°C

4 8 –25°C
6 1.0
2 4
2 µA
IB = 0
0.1
0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0
Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V)

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 2SC2855, 2SC2856

Collector Cut-Off Current vs. Collector Cut-Off Current vs. Collector to

Collector to Base Voltage Emitter Voltage
1,000 1,000
Collector Cut-Off Current ICBO (pA)

Collector Cut-Off Current ICEO (nA)

°C
75 5°C
100 =
25 100 =7
Ta –25 Ta

25
10 10
–25

1.0 1.0

0.1 0.1
0 20 40 60 80 100 0 20 40 60 80 100
Collector to Base Voltage VCB (V) Collector to Emitter Voltage VCE (V)

Emitter Cut-Off Current vs.Emitter to Collector to Emitter Breakdown

Base Voltage Voltage vs. Base to Emitter Resistance
1,000 190
Collector to Emitter Breakdown Voltage

Typical Value
Emitter Cut-Off Current IEBO (pA)

IC = 1 mA
°C

180
75

100
=
Ta

V(BR)CER (V)

170
25
5

10
–2

160

1.0
150

0.1 140
0 2 4 6 8 10 10 100 1k 10 k 100 k
Emitter to Base Voltage VEB (V) Base to Emitter Resistance RBE (Ω)

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2SC2855, 2SC2856

DC Current Transfer Ratio vs. Collector to Emitter Saturation Voltage vs.

Collector Current Collector Current
1,000 1.0

Collector to Emitter Saturation Voltage

Pulse
Ta = 75°C IC = 10 IB
DC Current Transfer Ratio hFE

25
–25
300 0.3

VCE(sat) (V)
100 0.1

Ta = 75°C
25
30 0.03 –25
VCE = 12 V
Pulse
10 0.01
1 3 10 30 100 1 3 10 30 100
Collector Current IC (mA) Collector Current IC (mA)

Base to Emitter Saturation Voltage vs. Gain Bandwidth Product vs.

Collector Current Collector Current
10 1,000
Pulse VCE = 6 V
Gain Bandwidth Product fT (MHz)
Base to Emitter Saturation Voltage

IC = 10 IB 500

3
200
VBE(sat) (V)

1.0 100
Ta =–25°C
75 25 50

0.3
20

0.1 10
1 3 10 30 100 0.5 1.0 2 5 10 20 50
Collector Current IC (mA) Collector Current IC (mA)

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 2SC2855, 2SC2856
Collector Output Capacitance vs. Noise Voltage Referred to Input vs.
Collector to Base Voltage Collector Current
100 10
Collector Output Capacitance Cob (pF)

IE = 0 VCE = 6 V
f = 1 MHz Rg = 0

Noise Voltage Referred to Input

f = 1 kHz
30 3

Hz)
en (nV/ √
10 1.0

3 0.3

1 0.1
1 3 10 30 100 0.1 0.3 1.0 3 10
Collector to Base Voltage VCB (V) Collector Current IC (mA)

Noise Voltage Referred to Input vs. Noise Voltage Referred to Input vs.
Signal Source Resistance Collector to Emitter Voltage
1,000 1.0
VCE = 6 V
Noise Voltage Referred to Input

f = 1 kHz
Noise Voltage Referred to Input

0.9
100
A .0
m 1
Hz)

Hz)

10 0.
1
0.8
=
en (nV/ √

en (nV/ √

IC
10
0.7

1.0
0.6 IC = 1 mA
Rg = 0
f = 1 kHz
0.1 0.5
10 100 1k 10 k 100 k 1 3 10 30 100
Signal Source Resistance Rg (Ω) Collector to Emitter Voltage VCE (V)

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2SC2855, 2SC2856
Noise Voltage Referred to Input vs.
Frequency
2.0
VCE = 6 V
Rg = 0

Noise Voltage Referred to Input

1.6

Hz)
1.2

en (nV/ √
IC = 1 mA
0.8
10

0.4

0
10 100 1k 10 k 100 k
Frequency f (Hz)

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 2SC2855, 2SC2856

Package Dimensions

As of January, 2001
Unit: mm

4.8 ± 0.4 3.8 ± 0.4

5.0 ± 0.2
2.3 Max
12.7 Min

0.60 Max
0.7

0.55Max 0.5Max

1.27
2.54

Hitachi Code TO-92 (1)

JEDEC Conforms
EIAJ Conforms
Mass (reference value) 0.25 g

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2SC2855, 2SC2856

Cautions

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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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Colophon 2.0

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