Common Base Configuration

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Analog Electronic Circuit

(Transistor)

Dr. Akshaya Kumar Pati, Ph. D.

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Transistor Configuration
• When a transistor is to be connected in a circuit, one terminal is used as an
input terminal, the other terminal is used as an output terminal, and the
third terminal is common to the input and output.
• Depending upon the input, output, and common terminals, a transistor can
be connected in three configurations.

(i) Common-Base (CB) configuration


(ii) Common-Emitter (CE) configuration
(iii) Common-Collector (CC) configuration

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Common Base(CB) Configuration
• This is also called grounded-base configuration. In this configuration, the
emitter is the input terminal, the collector is the output terminal, and
the base is the common terminal.
• The input signal is given between emitter and base, the output is taken
between collector and base.

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Current component in CB Configuration

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶

𝐼𝐶 = 𝛼𝐼𝐸 + 𝐼𝐶𝐵𝑂 (Some portion of the emitter current flows to the collector region)

𝐼𝐶𝐵𝑂 = Reverse saturation or leakage current flows in base-collector junction

The reverse saturation current is very small as compared to the 𝛼𝐼𝐸 , it can be neglected,
hence 𝐼𝐶
𝛼=
𝐼𝐸
• Here, alpha is defined as the collector current divided by the emitter current. It is called as Common Base
current gain or current amplification factor of CB configuration.
𝛥𝐼𝐶
• If the input signal is varying with time(i.e. AC signal), the current amplification factor is represented as 𝛼 =
𝛥𝐼𝐸

• Since the collector current almost equals the emitter current, the alpha value is slightly less than 1.
Its range normally, 0.95-0.99.
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Characteristic of CB configuration:

• Input characteristic: Graphical relationship between the emitter


current(IE) and emitter base junction voltage(VEB) under various level
of collector base junction voltage (VCB)
• Output characteristic: Graphical relationship between the output
current(IC) to an output voltage(VCB) under various level of input
current(IE)

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Input Characteristic
To determine the input characteristics, the collector-base voltage VCB is kept constant at a particular voltage and
VEB is increased to some voltage and the corresponding emitter current is measured. This experiment is
repeated for different value of VCB

From this curve it is observed that:


 The input characteristic behave like a forward characteristic
of a PN junction diode

 The emitter current increases with increases in VCB voltage


Reason:
• By increasing the VCB, the base width become further decreases.
• The decrease in the effective base width by increasing the
reverse bias voltage of B-C junction is called as “Early Effect” or
“Base width modulation”
• Thus, the base current is less. As a result emitter current
increases.

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Output Characteristic
• To determine the output characteristics, the emitter current IE is kept constant at a suitable
value by adjusting the emitter-base voltage VEB. Then VCB is increased in suitable equal steps
and the collector current IC is noted for each value of IE.
• It is repeated for different value of IE
𝐼𝑐 ≈ 𝐼𝑒
So, Collector current is independent of VCB voltage.

• The output characteristic behave like a reverse


characteristic of a PN junction diode
• In the active region, both B-E and B-C
junction are reverse biased

• In the cut-off region, both B-E and B-C


junction are reverse biased

• In the saturation region, both B-E and B-C


junctions are forward biased

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