Ordering number : EN7370C

CPH5617
N-Channel Power MOSFET
http://onsemi.com
30V, 150mA, 3.7Ω, Dual CPH5

Features
• Low ON-resistance
• Ultrahigh-speed switching
• 1.5V drive
• Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±10 V
Drain Current (DC) ID 150 mA
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 600 mA
Allowable Power Dissipation PD 0.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions Product & Package Information

unit : mm (typ) • Package : CPH5
7017A-004 • JEITA, JEDEC : SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel

2.9 0.15 CPH5617-TL-E Packing Type : TL Marking

0.6

5 4 3
0.2

0.05
LOT No.
1.6
2.8

FZ

TL
1 2
1 : Drain1
0.6

0.95 0.4
2 : Drain2
3 : Gate2 Electrical Connection
0.2

4 : Source
5 4 3
0.9

5 : Gate1

CPH5

1 2

Semiconductor Components Industries, LLC, 2013

August, 2013 82113 TKIM TC-00002980/71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/6
 CPH5617

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 10 μA
Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=100μA 0.4 1.3 V
Forward Transfer Admittance | yfs | VDS=10V, ID=80mA 0.15 0.22 S
RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω
Static Drain to Source On-State Resistance RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω
RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω
Input Capacitance Ciss 7.0 pF
Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF
Reverse Transfer Capacitance Crss 2.3 pF
Turn-ON Delay Time td(on) 19 ns
Rise Time tr 65 ns
See specified Test Circuit.
Turn-OFF Delay Time td(off) 155 ns
Fall Time tf 120 ns
Total Gate Charge Qg 1.58 nC
Gate to Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC
Gate to Drain “Miller” Charge Qgd 0.31 nC
Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 1.2 V

Switching Time Test Circuit

VDD=15V

VIN
4V ID=80mA
0V RL=187.5Ω

VIN D VOUT
PW=10μs
D.C.≤1%
G

P.G 50Ω
CPH5617
S

Ordering Information
Device Package Shipping memo
CPH5617-TL-E CPH5 3,000pcs./reel Pb Free

No.7370-2/6
 CPH5617
ID -- VDS ID -- VGS
0.16 0.30
VDS=10V

°C
5V
0.14 3.5V V
2.0

--25
V
0.25

2.
3.0
4.0V

Ta=
0.12

°C
Drain Current, ID -- A
Drain Current, ID -- A

25
0.20

°C
V
0.10

75
6.0
0.08 0.15
VGS=1.5V
0.06
0.10

0.04

0.05
0.02

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0
Drain to Source Voltage, VDS -- V IT00029 Gate to Source Voltage, VGS -- V IT00030
RDS(on) -- VGS RDS(on) -- ID
10 10
Ta=25°C VGS=4V
9
7

On-State Resistance, RDS(on) -- Ω

On-State Resistance, RDS(on) -- Ω

7 5

6 80mA Ta=75°C
Static Drain to Source
Static Drain to Source

5
3
25°C
ID=40mA
4 --25°C
3 2

0 1.0
0 1 2 3 4 5 6 7 8 9 10 0.01 2 3 5 7 0.1 2 3 5
Gate to Source Voltage, VGS -- V IT00031 Drain Current, ID -- A IT00032
RDS(on) -- ID RDS(on) -- ID
10 100
VGS=2.5V VGS=1.5V
7
5
On-State Resistance, RDS(on) -- Ω
On-State Resistance, RDS(on) -- Ω

3
5 Ta=75°C
2
25°C
Static Drain to Source
Static Drain to Source

--25°C 10
3 Ta=75°C
7
5
--25°C
2
25°C
3

1.0 1.0
0.01 2 3 5 7 0.1 2 3 5 0.001 2 3 5 7 0.01 2 3
Drain Current, ID -- A IT00033 Drain Current, ID -- A IT00034
RDS(on) -- Ta yfs -- ID
7 1.0
VDS=10V
7
Forward Transfer Admittance, yfs -- S

6
On-State Resistance, RDS(on) -- Ω

3
5
mA 5°C
=40 2 --2
5V, I D Ta=
4 =2. mA 75°C
V GS =80
Static Drain to Source

. 0 V, ID 0.1
=4
3 VGS 7 25°C
5
2
3

1 2

0 0.01
--60 --40 --20 0 20 40 60 80 100 120 140 160 0.01 2 3 5 7 0.1 2 3 5
Ambient Temperature, Ta -- °C IT00035 Drain Current, ID -- A IT00036

No.7370-3/6
 CPH5617
IS -- VSD SW Time -- ID
5 1000
VGS=0V VDD=15V
7
VGS=4V
3 5

Switching Time, SW Time -- ns

2
3
Source Current, IS -- A

2 td(off)

°C
0.1 tf

75
7 Ta= 100

C
25°

°C
5 7

--25
tr
5
3
3
2
2
td(on)

0.01 10
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 2 3 5 7 0.1 2
Diode Forward Voltage, VSD -- V IT00037 Drain Current, ID -- A IT00038
Ciss, Coss, Crss -- VDS VGS -- Qg
100 10
f=1MHz VDS=10V
7
9 ID=150mA
5

Gate to Source Voltage, VGS -- V

8
3
Ciss, Coss, Crss -- pF

7
2
6

10 5
Ciss
7 4
5 Coss
3
3 Crss
2
2
1

1.0 0
0 2 4 6 8 10 12 14 16 18 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain to Source Voltage, VDS -- V IT00039 Total Gate Charge, Qg -- nC IT00040
PD -- Ta
0.30
Allowable Power Dissipation, PD -- W

0.25

0.20

0.15

0.10

0.05

0
0 20 40 60 80 100 120 140 160
Amibient Temperature, Ta -- °C IT01962

No.7370-4/6
 CPH5617

Outline Drawing Land Pattern Example

CPH5617-TL-E
Mass (g) Unit
Unit: mm
0.02 mm
* For reference

0.6

1.4
2.4
0.95 0.95

No.7370-5/6
 CPH5617

Note on usage : Since the CPH5617 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.

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PS No.7370-6/6