Ch-

MoCFET

MosFET.
G
Meal

Sio D oX13M

+O S0
Solia as olis
Duy O STe - e
Si+24,02 Sj t2H,T ubsnd)
lid Bdy
Wet 0 Meta M

o (siou)7
S/c n on p-ye

MOSFET

Enhancement Dupledio
(NoMmally oFF) Nonmally oN

2 Enhan tement Ty e.

Fo -MOI
Vonc +Ve Vos
S To
Vps +ve
T 0
wt nt

-hann
Jntoinaly
4+ype N-Ho
ToD- Sabstrak
6dy

On -P-Mos
To
S
nS= VC s-
Vo-Ve Vos
P-chenn
To+o Lo-s n-tvhe
Tntunnay Supytoae
To[s

3 open ations

Fon Cut-oFF
Vas Vtuw-M
Vov Vey -Vtn
 VoVer|rMo

nean

Vs-Veh -M6 )
Vo
DVe-/Verlr r1o)

Saconatjon

VorzVos- - Vtn -Moi]

UsD2V- VerlCr-H047

Gnalh bl To Vns

Zen?
V tnaheld Ve lHas Vns
Vo0

Keon of De

T
T - -#o
hretdon f ace
 umem + Eguaion
S
Fo N-Mos

jnewi
A Cox (VE,) VD

Sofwnation|1p = Mn2Cox Veu-Vtn

om -Mos

T-MCox Ve|Velo-Via
inean

Tp=Cox -erl)
ddtwnatien-
2 L

width leugth Modulation -

wment Eguation

AL Vos
|4L = AVos

Mn2Co + AVeVon-Ve

To-Cox
2 W1+ Vor) (Ves-Ve
L
 To+AVos
To 0

o =1+ Vos
AVos

Vos

Feuly Hhagtal

Gnalh b| T & Vos

(Sadtunadion)
Vos Vns-VA
eso briod leyjon

Vog-Vn-VE Vas
 (apau tan(e-

E.A
Cox tox

Capnulamte Ot Anea

tox
Keidan ce And Trans Con ductante-

Linea =K=
JAnlox (Vau-Ve

fonatwation
fo1 with length Modulation

Tp lsodt) =lng th ranotot

fn Sahuoation 1 Nnlox Vn- Ve),L

n Linran Ay Cox Vos |

aVos
lo. Body Etec+'-

Fon N-MOs

246
Ve-Ves + Y2 +e-24
fnor em annere
CoX
wnone
NAdoping Con. of b-tyhe hushade in
N-MOS

Fu yotemria Buk Pottntia

O 0.4 on N-MOS
Y= 'AVe
lotoie
+ve = 2 hce
ViG
on P Mos

Y= -Ve

V Ve

Va
 Inven ten.
C-MOS

Se
P-MoS

N-MoS S

, Sn

Ve PL -

N=S
L

VanAN=FC

Vpe+Mel
P-s

SiuWingfawt
P = S

N - L

P-
N=L

Voo Vop-VE Voo Vi

2
 P N-Mos JM Satwnation
Whm

1ptat) them
Tp (ust) p

V
VpO-Verl + e
K

K=Kp Vtn tin= Verthm

Voo
V 2

ton S An 13oo Cw/. Stc

=

Me= Seo (m/VSe

w = 2.5
Asprct leio
Fo PMos atwnation

V Vg+Vep
2

-Mos Soctunadion-
VppV
2
 Vap-S

7os
Vpo
NoS

N-MOS
PMOS Vim Vo
Kegion 04 V <Vu V.-Vp0
L
AB

S L
VthVy Vop Vep 22Voo ) So.
-Tope)
S Topil-1)
CC
ap &VVoo-\Ln|V,ppal-,

V-0 =0
Vi Vpp- 1Ven!
DE

o6U& 0isipastin in CMs

(i) stetic lowe Tn Study State of GMOS

Po Vop Xleahase
whune ahage=ltahaseNmos) + leakast (tmos
 1 Dynawuc (apautwe powen

EPM)-yVoo
Ep (NMOs)= yVo

Eo (emos) Cvi

Eo tMOs.
PMOS
T

CMOS fw (Voo

whne tsw oiti ng fueguney

hune, f2 o Puding tnegumy

tuhe d=| wt givem

Oynawic mwnt nut Powen

Tnax Voot (tnt te)

2

when N-Mos M SorwnateM

 V
Cnaph plu

To(nax

Vpo
2
N
V

14ns Cemductam(e

8m-9 An(ox To

Satuwnaton,dm
2To
(Vns-Vt

M4gH of N-Mos
uut,
9 Constoat
 MoS- (APACIToR
e

AccAcc dmul adon Mod V20)

Wok tuncdion 2

E3EES.

V= - EdX

Beehon
Beplehen Mode

Qsto
M2NaY

Es

uafare Volhage,
Deleon widh NA

V.x

V.Hage at He, 29Na E

Cox

Vox +
22Na & +
Grulevoln, |Ven CoX

ii) TnlensHen Mode

Vr 22NAE 206 2g
VG-1s Cox

Xamox 2E24)
2 NA

VT
 nvenom Chang

co VaVr)
Cox (Ve-V

(Vn-Vr

Nen-Tdealihu

- h 0, mtenale.
(ii) fixed chang &

Case

|V.6. QMS
(i) Case
Xo
CoX

them

Flat bandblage, VsG. = F

CX
 Tola Tlac band Volage

Ve.G. (Tta) MS F
CoX
2NA Es
CoX
2962+ Vo

chaactoisic of Tdal Mosta

C-V
a d e

Cox
ep

C o x +C d e

C
Coo
toX Fan louf

CCoxCder lenshad

Cnin Fan igh f

deblehionen-veuion /
ttu nlaisn
A

Fon Atcumaeie
C CoX
tox

Fo deyleli on

Cox t de
 Caeh

Ca
vXa
Cach

Fo Imvenhs)

Fon bw tneyutmy

Cox Eox
tox

i ton Hig toreueny,

C CXCdob
oVonal Centat
CoxCacP
tiLonstandt
lamax
u e to dhangt Very ft AV hen EHP
Cpulibiu
Caul briun tule changt. Due th th at kiyh f
Valus of Capad ton ill fixed.
 C-V- Cnana te sHfayANon-ldra
Mas-CAP

Vtn Ven 4

Du to
Due to
ixed Chans

+ve
) Oue to Axed chnal,
ovenal VolHag ydec V+ also
then
dec
i) Due to +4, it s tvehwn

OVUnall Voltage Ve MC
oea

6X
itke Fori) t .
Enengy Band hagna

(1) Attumylation

.Er
-Vn

i) Depleion

EM
M
D) nven Aon

Weak enie
2Vex -rke 7

S
M
94z2s Shnovg Tnvenion

Acunu ahion- deplehon-Wak Tvenion - Sinon weitne

ndiinnt Shuneng v ennoM

13 E tert of Temkenatune O
TloSFET

So
deomeaiet by -2 wV do
JMNtJU f wponodry
V deoeasu
mUlCase
oih JM 1t0 JU
Bucc,also deontaie

tempenadune .b M doninati
actically, Ty denesy wn
wIth J
tmpenawie.