NFR12C20A ThinkiSemiconductor
NFR12C20A ThinkiSemiconductor
NFR12C20A ThinkiSemiconductor
.100(2.55)
.112(2.85)
.165(4.2)
.272(6.9)
.248(6.3)
.381(9.7)
.134(3.4)
¬ Low forward voltage drop .118(3.0)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
¬ High surge current capability
.512(13.0)
.543(13.8)
.161(4.1)MAX
.055(1.4)
method 208
¬ Polarity:As marked on diode body
Case Case Case
¬ Mounting position: Any Negative
Positive
¬ Weight: 2.2 gram approximately
Doubler
Common Cathode Common Anode
Suffix "C" Suffix "A" Suffix "D"
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
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12 100
Pulse Width 8.3ms
(JEDEC Method)
10 80
CURRENT, AMPERES
AMPERES
7 60
5 40
2 20
60 Hz Resistive or
Inductive load
0 0
0 50 100 150 1 10 100
10
INSTANTANEOUS REVERSE CURRENT,
NFR12C20A
o
TJ=125 C
100
NFR12C40A
MICROAMPERES
6
NFR12C60A
AMPERES
10
o
TJ=25 C
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100
100
10
0.1 1.0 4.0 10 100
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