ASE Power Chip Embedding NMI
ASE Power Chip Embedding NMI
ASE Power Chip Embedding NMI
Power Modules
Dr. Kay Essig
Efficiency ASE
September, 2016
by
Chip Embedding
MOSFET
3.4x3.0 mm²
2 Layer RDL
Chip 1 Chip 2
Chip 1 Chip 2
Leadframe
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Die Attach on L/F - TLPB
Transient Liquid Phase Bonding
High Temp.
Pressure
Die Bond preparation on Die side TLPB process Die Bond on Lead Frame
Lamination
Lase Drill
Plating
Pattern
S/M
ENIG
Laser Marking
Solder
Printing
Singulation
Die attach Lamination Laser drill Plating & Patterning S/M, Marking, Singulation
X-Ray result
ASE Confidential / Security-B
© ASE Group. All rights reserved.
Embedded Die Power Module
Advantages
• Smaller & Thinner package DrBlade
• Excellent Thermal Dissipation
− 2 sides cooling areas
• Excellent Electrical Performance
− µ-via for Gate and Source, full surface Drain
DC/DC Module
− Low resistance & inductance, good shielding 4.5x6.6 mm²
• Enhanced Reliability
DrMOS
Markets
• Power Devices, MOSFET
• DC/DC Converter Modules
• Fast switching Power & IGBT
DC/DC PQFN
6x6 mm²
TLPB / Ag Sintering
High melting point > 300°C
Stable against thermal stress
mOhm
L (nH)
R (mohm)
LSMOS
Unit: um
Symbol Description Normal Advance Prototype
RDL Layer 2
Pre Ass‘y
Embedding
Bump, Grind,
in Substrate
Dice, Sort
Foundry
Module Component
Customer Final Test Test
Process
Flow for
Embedded
Devices
OSAT
Module
Package
Assembly
Assembly
Final Test