Optical Properties and Structure of Cerium Dioxide Films
Optical Properties and Structure of Cerium Dioxide Films
Optical Properties and Structure of Cerium Dioxide Films
The refractive index n and the absorption coefficient k of evaporated CeO2 films were measured in the
wavelength region from 0.22ju to 1.01g. Films produced by direct evaporation of CeO2 were found to be
extremely durable and nonabsorbing in the visible and can be used as beam splitters and as high-index films
in multilayer film combinations. The refractive index of CeO2 films depends strongly on the temperature
of the substrate. An increase of the substrate temperature from 250 C to 300'C increases the refractive
index of the condensed film material at X= 550 miu,from about 2.2 to 2.4. The absorption of CeO2 films increases
strongly below 400 m~uand reaches a maximum at 300 m. Evaporated CeO2 films show the same cubic struc-
ture as compact material and crystallize without preferred orientation on amorphous substrates. The
crystal size in the condensed films increases with increasing temperature.
III. OPTICAL PROPERTIES OF CeO2 FILMS fresh material. The use of a shutter in front of the glass
plates until evaporation speed and pressure reach
Figure 1 shows the visible reflectance and trans-
constant values is, therefore, most important for
mittance of two films of cerium dioxide, each one-
producing films with best mechanical and optical
quarter wavelength thick in the visible, deposited on a
properties. In all film preparations discussed in the
glass plate at 300C. The first film, called 1st evapora-
following parts of this paper, a removable shutter was
tion, was prepared with fresh material and without
used to avoid contamination of the glass plates with
vapor given off during the beginning of the evaporation.
w
Z6 70 r-FIRSTIVAPORATION
Figure 2 shows the effect of substrate temperature
2
i I
I- I- _:: on the refractive index of CeO 2 films at X= 450 my and
60 I
LSECONDIEVAPORANON X =550 mu, respectively. By increasing the substrate
so - temperature from 50C to 350C, the refractive index
I-
w
7SECONDIEVAPORATION
of the condensed film material increased from 2.18 to
R- =::
2.42 at X =550 myi and from 2.28 to 2.53 at X=450 myi.
C
,VAPORATION In contrast to the substrate temperature, other factors
20 such as deposition rate and pressure during the evapora-
10
450
-L
500
___
550
--- --- ---
7QU.
tion were found to have only very little effect on the
WAVELENGTH IN MILLIMICRONS optical properties of CeO2 films. If films of very high
index of refraction are desired, CeO2 should, therefore,
FIG. 1. Reflectance and transmittance of CeO2 films prepared
with fresh material and with material previously outgassed and be condensed on heated substrates. In addition, films
melted. Both films X/4 thick at X=600 mu deposited on glass at evaporated onto heated glass plates show much better
300°C. abrasion and scratch resistance than those condensed
at low temperatures.
using a shutter while the CeO2 was brought up to Figure 3 shows the dispersion curves of 200 A to
evaporation temperature. The second film, called 2nd 600 A thick films of CeO2 condensed at 50C and 300C.
evaporation, was prepared with material previously The absorption of CeO2 films increases strongly below
outgassed and melted. Both films show no appreciable 400 mu and reaches a maximum at 300 mit. This results
absorption in the visible, but the reflectance of the film in a maximum for n at 340 myuand a strong normal
prepared with melted and outgassed material is con- dispersion in the near ultraviolet and visible. The use of
siderably higher than that of the film produced with
fresh material. The glass plate coated in the second
3.2 .. ..-. .. .. .
evaporation has a maximum reflectance of 36.3% at 2.8
X=600 mu which corresponds to a refractive index 2.6
2.4
n= 2.38, while the maximum reflectance of the film 22
prepared with fresh material is only 32.5% and has, 2.0
2:°8
-- -- Ei E5 I 111 11
therefore, a refractive index of 2.30. Films with the
I.
highest possible refractive index can only be produced I 0 hjd~
with completely outgassed and melted material. In
addition, films produced with outgassed and melted
material are more durable than those prepared with 02 03 0.4 0.5 0.6 0.7 0.8 09 1.0
WAVELENGTH
IN MICRONS.
* The authors are indebted to Dr. L. N. Hadley for preparing
the graphs used in this paper to determine n and k. FIG. 3. Dispersion of CeO 2 films between 200 A and
5 G. Hass and H. Kehler, Optik 5, 48 (1948). 600 A thick from 0.2 to 1.0,.
326 RASS, RAMSEY, AND THUN Vol. 48
TEMPERATURE
(C)
200C and 250 0 C showed a lattice constant of 5.41 A
. lO 0 000 0
U)NN,2 0 which is identical with that of the compact material.
bc
AC Above 250C, the lattice constant increased slightly,
Z
probably due to an increase of the number of lattice
I- dislocations with temperature and a freezing in of these
4 4C
dislocations during the comparatively fast cooling
Q)
4
30 <1
Io -; 1;
L-
Tf3I
. -_
1 ^1 fI off rate of the film after its deposition. Although
subsequent heating of low-temperature films had no
appreciable effect on the optical constants, it resulted
O2
w i.8 Z4 6 Z 3.-3. 1- in a slight decrease of the lattice constant toward the
1.6. 1.8 2.0 22 2.4 2.6 2.8 310 3.2 X 10'" value of the bulk material.
lI TEMPERATURE
(K-') The density difference corresponding to the lattice
FIG. 4. Crystal size in CeO2 films as function of the
constant difference between films of low and high
substrate temperature during deposition. substrate temperatures accounts only for a small part
of their difference in the refractive indexes (about
CeO2 in multilayer film combinations below 400 m/ is 25%), as one can easily show by use of the Lorentz-
prohibited because of the absorption in this region. The Lorenz law.7 The main cause of the lesser density of
shapes of the n and k curves are fairly similar for both low-temperature substrate films must be sought,
substrate temperatures. This indicates that the smaller therefore, in a greater content of less dense packed
n and k values of the low-temperature films are caused boundary layers between the crystal grains and, corre-
mainly by a lower density and not by a different chemi-
100_ _ _
cal composition.
With increasing film thickness, CeO2 films show a
rapidly increasing surface roughness and, therefore, 80g6 ~~~~~R-
high scattering losses, especially in the ultraviolet.
60
This introduces a great uncertainty in the n and k
determination of thicker films (> 1000 A) in the
ultraviolet. It could, however, be established that the 40