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STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET

TYPE VDSS RDS(on) ID

STP7NC80Z 800 V < 1.5 Ω 6.5 A

STP7NC80ZFP 800 V < 1.5 Ω 6.5 A
STB7NC80Z 800 V < 1.5 Ω 6.5 A 3
STB7NC80Z-1 800 V < 1.5 Ω 6.5 A 1
3
■ TYPICAL RDS(on) = 1.3Ω D2PAK 1
2

■ EXTREMELY HIGH dv/dt AND CAPABILITY TO-220 TO-220FP

GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
3
■ GATE CHARGE MINIMIZED 12

I2PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating INTERNAL SCHEMATIC DIAGRAM
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.

APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP7NC80Z P7NC80Z TO-220 TUBE
STP7NC80ZFP P7NC80ZFP TO-220FP TUBE

STB7NC80ZT4 B7NC80Z D2PAK TAPE & REEL

STB7NC80Z-1 B7NC80Z I2PAK TUBE

May 2003 1/13

STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP7NC80Z
STP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 800 V
VGS Gate- source Voltage ±25 V
ID Drain Current (continuous) at TC = 25°C 6.5 6.5 (*) A
ID Drain Current (continuous) at TC = 100°C 4 4(*) A
IDM (
) Drain Current (pulsed) 26 26 (*) A
PTOT Total Dissipation at TC = 25°C 135 40 W
Derating Factor 1.08 0.32 W/°C
IGS Gate-source Current ±50 mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3 KV
dv/dt Peak Diode Recovery voltage slope 3 V/ns
VISO Insulation Withstand Voltage (DC) -- 2000 V
Tstg Storage Temperature -65 to 150 °C
Tj Max.Operating Junction Temperature 150 °C
(
) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed

THERMAL DATA
TO-220 / D2PAK /
TO-220FP
I2PAK
Rthj-case Thermal Resistance Junction-case Max 0.93 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 6.5 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 290 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 25 V
Voltage
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C
Rz Dynamic Resistance ID = 20 mA, 90 Ω

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 800 V
Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. ID = 1 mA, VGS = 0 0.9 V/°C
Coefficient
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ± 20V ±10 µA
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3 4 5 V
RDS(on) Static Drain-source On VGS = 10V, ID = 3.3 A 1.3 1.5 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 6 S
ID = 3.3 A
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2350 pF
Coss Output Capacitance 164 pF
Crss Reverse Transfer 17 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 400 V, ID = 3 A 33 ns
tr Rise Time RG = 4.7Ω VGS = 10 V 12 ns
( see test circuit, Figure 3)
Qg Total Gate Charge VDD = 640 V, ID = 6 A, 43 58 nC
Qgs Gate-Source Charge VGS = 10V 12 nC
Qgd Gate-Drain Charge 15 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 640 V, ID =6 A, 13 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 13 ns
tc Cross-over Time (see test circuit, Figure 5) 20 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 6.5 A
ISDM (2) Source-drain Current (pulsed) 26 A
VSD (1) Forward On Voltage ISD =6.1 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 6 A, di/dt = 100A/µs 680 ns
Qrr Reverse Recovery Charge VDD = 40V, Tj = 150°C 6 µC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 18 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV=αT(25°-T) BVGSO(25°)

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STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

Safe Operating Area For TO-220/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP

Output Characteristics Transfer Characteristics

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 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

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STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

Source-drain Diode Forward Characteristics

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 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
F

G1

G
H

F2

1 2 3
L5
L2 L4

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STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

TO-262 (I2PAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531

L1 3.48 3.78 0.137 0.149

L2 1.27 1.4 0.050 C 0.055

A

A1
C2

B2
B

e
E

L1

L2 D L
P011P5/E

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 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

D2PAK MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 4º
3

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STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

TAPE MECHANICAL DATA BASE QTY BULK QTY

1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
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 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics

© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved

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