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N- and P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
Available
0.028 at VGS = 10 V 5.3
N-Channel 60 6 nC • TrenchFET® Power MOSFET
0.031 at VGS = 4.5 V 4.7 • 100 % Rg and UIS Tested
0.050 at VGS = - 10 V - 4.9
P-Channel - 60 8 nC APPLICATIONS
0.060 at VGS = - 4.5 V - 4.5
• CCFL Inverter
D1 S2

SO-8

S1 1 8 D1 G2
G1 D1 G1
2 7
S2 3 6 D2

G2 4 5 D2
S1 D2

N-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 60 - 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 5.3 - 4.9
TC = 70 °C 4.3 - 4.2
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 4.3b, c - 4.0b, c
TA = 70 °C 3.4b, c - 3.4b, c
Pulsed Drain Current (10 µs Pulse Width) IDM 20 - 25 A
TC = 25 °C 2.6 - 2.8
Source Drain Current Diode Current IS
TA = 25 °C 1.7b, c - 1.7b, c
Pulsed Source-Drain Current ISM 20 - 25
Single Pulse Avalanche Current IAS 11 15
L = 0.1 mH
Single Pulse Avalanche Energy EAS 6.1 11 mJ
TC = 25 °C 3.1 3.4
TC = 70 °C 2 2.2
Maximum Power Dissipation PD W
TA = 25 °C 2b, c 2b, c
TA = 70 °C 1.3b, c 1.3b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

N-Channel P-Channel
Parameter Symbol Typ. Max. Typ. Max. Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 55 62.5 53 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40 30 37
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Static
VGS = 0 V, ID = 250 µA N-Ch 60
Drain-Source Breakdown Voltage VDS V
VGS = 0 V, ID = - 250 µA P-Ch - 60
ID = 250 µA N-Ch 55
VDS Temperature Coefficient ΔVDS/TJ
ID = - 250 µA P-Ch - 50
mV
ID = 250 µA N-Ch -6
VGS(th) Temperature Coefficient ΔVGS(th)/TJ
ID = - 250 µA P-Ch 4
VDS = VGS, ID = 250 µA N-Ch 1 3
Gate Threshold Voltage VGS(th) V
VDS = VGS, ID = - 250 µA P-Ch -1 -3
N-Ch 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V nA
P-Ch - 100
VDS = 60 V, VGS = 0 V N-Ch 1
VDS = - 60 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS µA
VDS = 60 V, VGS = 0 V, TJ = 55 °C N-Ch 10
VDS = - 60 V, VGS = 0 V, TJ = 55 °C P-Ch - 10
VDS ≥ 5 V, VGS = 10 V N-Ch 20
On-State Drain Currentb ID(on) A
VDS ≤ - 5 V, VGS = - 10 V P-Ch - 25
VGS = 10 V, ID = 4.3 A N-Ch 0.026 0.028
VGS = - 10 V, ID = - 3.1 A P-Ch 0.055 0.060
Drain-Source On-State Resistanceb RDS(on) Ω
VGS = 4.5 V, ID = 3.9 A N-Ch 0.029 0.035
VGS = - 4.5 V, ID = - 0.2 A P-Ch 0.060 0.070
VDS = 15 V, ID = 4.3 A N-Ch 15
Forward Transconductanceb gfs S
VDS = - 15 V, ID = - 3.1 A P-Ch 8.5
Dynamica
N-Ch 665
Input Capacitance Ciss N-Channel P-Ch 650
VDS = 15 V, VGS = 0 V, f = 1 MHz
N-Ch 75
Output Capacitance Coss pF
P-Channel P-Ch 95
VDS = - 15 V, VGS = 0 V, f = 1 MHz N-Ch 40
Reverse Transfer Capacitance Crss
P-Ch 60
VDS = 30 V, VGS = 10 V, ID = 4.3 A N-Ch 13 20
VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A P-Ch 14.5 22
Total Gate Charge Qg
N-Ch 6 9
N-Channel P-Ch 8 12
VDS = 30 V, VGS = 4.5 V, ID = 4.3 A nC
N-Ch 2.3
Gate-Source Charge Qgs
P-Ch 2.2
P-Channel
VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A N-Ch 2.6
Gate-Drain Charge Qgd
P-Ch 3.7
N-Ch 2 3
Gate Resistance Rg f = 1 MHz Ω
P-Ch 14 20

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Dynamica
N-Ch 15 25
Turn-On Delay Time td(on) N-Channel P-Ch 30 45
VDD = 30 V, RL = 8.8 Ω
N-Ch 65 100
Rise Time tr ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω
P-Ch 70 105
N-Ch 15 25
Turn-Off Delay Time td(off) P-Channel
VDD = - 30 V, RL = 12.5 Ω P-Ch 40 60

tf ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 10 15

Fall Time
P-Ch 30 45
ns
N-Ch 10 15
Turn-On Delay Time td(on) N-Channel P-Ch 10 15
VDD = 30 V, RL = 8.8 Ω
N-Ch 15 25
Rise Time tr ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω
P-Ch 13 20
N-Ch 20 30
Turn-Off Delay Time td(off) P-Channel
VDD = - 30 V, RL = 12.5 Ω P-Ch 35 55

tf ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω N-Ch 10 15

Fall Time
P-Ch 30 45
Drain-Source Body Diode Characteristics
N-Ch 2.6
Continuous Source-Drain Diode Current IS TC = 25 °C
P-Ch - 2.8
A
a
N-Ch 20
Pulse Diode Forward Current ISM
P-Ch - 25
IS = 1.7 A N-Ch 0.8 1.2
Body Diode Voltage VSD V
IS = - 2 A P-Ch - 0.8 - 1.2
N-Ch 30 60
Body Diode Reverse Recovery Time trr ns
P-Ch 30 50
N-Channel N-Ch 32 50
Body Diode Reverse Recovery Charge Qrr IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C nC
P-Ch 35 60

P-Channel N-Ch 25
Reverse Recovery Fall Time ta
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C P-Ch 16
ns
N-Ch 5
Reverse Recovery Rise Time tb
P-Ch 14
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20 5
VGS = 10 thru 4 V
18

16 4
I D - Drain Current (A)

I D - Drain Current (A)

14

12 3

10

8 2
TC = 125 °C
6

4 1 25 °C
2 3V

0 0 - 55 °C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.060 1000

0.055
800
R DS(on) - On-Resistance (mΩ)

C - Capacitance (pF)

0.050
Ciss
0.045 600

0.040
VGS = 4.5 V 400
0.035
VGS = 10 V
0.030
200
0.025 Coss

Crss
0.020 0
0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 2.0
VDS = 30 V
ID = 4.3 A VGS = 10 V
V GS - Gate-to-Source Voltage (V)

1.8
ID = 4.3 A
8
RDS(on) - On-Resistance

1.6
(Normalized)

6
1.4

4 1.2

1.0
2
0.8

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20 0.12

R DS(on) - Drain-to-Source On-Resistance (mΩ)

TJ = 150 °C 0.11
10
0.10
I S - Source Current (A)

0.09

0.08

0.07
TJ = 25 °C ID = 4.3 A
0.06

0.05

1 0.04
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

3.0 25

2.8
20
2.6 ID = 250 µA

2.4
VGS(th) (V)

Power (W)

15

2.2

2.0 10

1.8
5
1.6

1.4 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited by RDS(on)*

10
100 µs
I D - Drain Current (A)

1 1 ms

10 ms

0.1 100 ms
1s
10 s
TA = 25 °C
Single Pulse DC
0.01

0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

6 4.0

3.5
5
3.0

Power Dissipation (W)

4
ID - Drain Current (A)

2.5

3 2.0

1.5
2
1.0
1
0.5

0 0.0
25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TC - Case Temperature (°C)

Current Derating* Power Derating

100
IC - Peak Avalanche Current (A)

10

L . ID
TA =
BV - VDD

1
0.000001 0.00001 0.0001 0.001

TA - Time In Avalanche (s)

Single Pulse Avalanche Capability

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

25 25
VGS = 10 thru 5 V

20 20
I D - Drain Current (A)

I D - Drain Current (A)

15 15

4V

10 10

TC = 125 °C
5 5
3V 25 °C
- 55 °C
0 0
0 1 2 3 4 5 6 7 8 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.11 1000

0.10
800
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)

0.09
Ciss
0.08
600

0.07 VGS = 4.5 V

VGS = 10 V 400
0.06

0.05
200
0.04 Coss

Crss
0.03 0
0 5 10 15 20 25 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 2.2

VDS = 30 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)

2.0 ID = 3.1 A
ID = 3.1 A
8
1.8
R DS(on) - On-Resistance

1.6
(Normalized)

6
1.4

4 1.2

1.0
2
0.8

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150 175

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20 0.40

TJ = 150 °C 0.35

10

R DS(on) - On-Resistance (Ω)

0.30
I S - Source Current (A)

0.25 ID = 3.1 A

0.20

0.15

0.10

TJ = 25 °C 0.05

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.6 50

0.4 40
V GS(th) Variance (V)

ID = 250 µA
30
Power (W)

0.2

0.0 20

- 0.2 10

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100
IDM Limited

Limited
10 by R DS(on)* P(t) = 0.0001
I D - Drain Current (A)

1 P(t) = 0.001

ID(on) P(t) = 0.01

Limited
P(t) = 0.1
0.1
TA = 25 °C
Single Pulse P(t) = 1
P(t) = 10
BVDSS Limited DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

4.0

3.5

3.0

ID - Drain Current (A)

2.5

2.0

1.5

1.0

0.5

0.0
25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

4.5 100

4.0
IC - Peak Avalanche Current (A)

3.5
Power Dissipation (W)

3.0

2.5
10
2.0

1.5
L . ID
1.0 TA =
BV - VDD
0.5

0.0 1
0 25 50 75 100 125 150 0.000001 0.00001 0.0001 0.001

TC - Case Temperature (°C) TA - Time In Avalanche (s)

Power Derating, Junction-to-Foot Single Pulse Avalanche Capability

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(6.248) (0.711)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.

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incomplete data contained in the table or any other any disclosure of any information related to
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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