Datasheet, Rev. 1.0, Jan.

2008

BTS50080-1TMB
Smart High-Side Power Switch
PROFET®
One Channel

Automotive Power
 Smart High-Side Power Switch
BTS50080-1TMB

Table of Contents

Table of Contents

1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Pin Assignment BTS50080-1TMB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.3 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.3.1 Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.1 Over-Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.2 Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.3 Reverse Polarity Protection - Reversafe® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.4 Over-Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.5 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.6 Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
8 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Datasheet 2 Rev. 1.0, 2008-01-23

Smart High-Side Power Switch BTS50080-1TMB
PROFET®
One Channel

1 Overview
Features
• Part of scalable product family
• Load current sense
• ReverSave®
• Very low standby current
• Current controlled input pin
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behavior at under-voltage PG-TO220-7-12
• Green Product (RoHS compliant)
• AEC qualified

Operating voltage Vbb(on) 5.5 .. 38 V

Over-voltage protection VON(CL) 39 V
On-State resistance at 150°C RDS(ON) 16 mΩ
Nominal load current IL(nom) 9.5 A
Load current (ISO) IL(ISO) 37.5 A
Current limitation IL6(SC) 90 A
Stand-by current for whole device with load Ibb(OFF) 6 µA

The BTS50080-1TMB is a one channel high-side power switch in PG-TO220-7-12 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on
Smart SIPMOS chip on chip technology.
The BTS50080-1TMB has a current controlled input and offers a diagnostic feedback with load current sense and
a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.

Type Package Marking

BTS50080-1TMB PG-TO220-7-12 S50080B

Datasheet 3 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Overview

Protective Functions
• ReverSave®, channel switches on in case of reverse polarity
• Reverse battery protection without external components
• Short circuit protection with latch
• Over-load protection
• Multi-step current limitation
• Thermal shutdown with restart
• Over-voltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for charged inductive loads)
• Electrostatic discharge protection (ESD)

Diagnostic Functions
• Proportional load current sense (with defined fault signal in case of overload operation, over temperature
shutdown and/or short circuit shutdown)
• Open load detection in ON-state by load current sense

Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• All types of resistive, inductive and capacitive loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits

Datasheet 4 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Block Diagram and Terms

2 Block Diagram and Terms

2.1 Block Diagram

Vbb
logic IC Rbb base chip

voltage sensor

over T
temperature clamp for
IN inductive load
gate control
driver & current
IIN logic charge pump limitation
ESD

IS OUT
VIS load current
sense
IL
VIN I IS
forward voltage drop detection

LOAD
RIS

Overview .emf
Figure 1 Block Diagram

2.2 Terms
Following figure shows all terms used in this data sheet.

Vbb VbIN V bIS Ibb VON

IIN
VBB
IN
VIN
RIN BTS50080-1TMB
IIS IL
IS OUT
V IS VOUT
RIS

Terms.emf
Figure 2 Terms

Datasheet 5 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Pin Configuration

3 Pin Configuration

3.1 Pin Assignment BTS50080-1TMB

TAB
Vbb

OUT
OUT

OUT
OUT
Vbb
IN

IS
1
2
3
4
5
6
7
TO220-7.emf
Figure 3 Pin Configuration

3.2 Pin Definitions and Functions

Pin Symbol Function

1, 2 OUT Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted.1)
3 IN Input; activates the power switch if shorted to ground.
4 Vbb Supply Voltage; positive power supply voltage; tab and pin 4 are internally shorted.
5 IS Sense Output; Diagnostic feedback; provides at normal operation a sense current
proportional to the load current; in case of overload, over temperature and/or short
circuit a defined current is provided (see Table 1 “Truth Table” on Page 21).
6, 7 OUT Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted.1)
TAB Vbb Supply Voltage; positive power supply voltage; tab and pin 4 are internally shorted.
1) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability, the clamping
capability and decrease the current sense accuracy.

Datasheet 6 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Absolute Maximum Ratings 1)

Tj = 25°C (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.

Supply Voltages
4.1.1 Supply voltage Vbb -16 38 V –
4.1.2 Supply voltage for full short circuit Vbb(SC) 0 30 V –
protection (single pulse)2)
4.1.3 Supply Voltage for Load Dump Vbb(LD) – 45 V RI = 2 Ω,
protection3) RL = 1 Ω
Logic Pins
4.1.4 Voltage at input pin VbIN -16 63 V –
4.1.5 Current through input pin IIN -120 15 mA –
4.1.6 Voltage at current sense pin VbIS -16 63 V –
4.1.7 Current through sense pin IIS -120 15 mA –
4)
4.1.8 Input voltage slew rate dVbIN/dt -20 20 V/µs –

Power Stages
4.1.9 Load current 5) IL - ILx(SC) A –
4.1.10 Maximum energy dissipation per EAS - 0.4 J Vbb = 12 V,
channel (single pulse) IL(0) = 20 A,
Tj(0) = 150°C
Temperatures
4.1.11 Junction temperature Tj -40 150 °C –
4.1.12 Storage temperature Tstg -55 150 °C –

ESD Susceptibility
4.1.13 ESD susceptibility HBM VESD -3 3 kV according to
EIA/JESD 22-A
114B
1) Not subject to production test, specified by design.
2) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.
3) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator.
4) Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input
path. A series resistor RIN in the input path is also required for reverse operation at Vbb ≤ -16V. See also Figure 14.
5) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.
Protection features are not designed for continuous repetitive operation.

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

Datasheet 7 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

General Product Characteristics

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.

4.2 Thermal Resistance

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.
1)
4.2.1 Junction to Case Rthjc – 0.7 0.8 K/W –
1)
4.2.2 Junction to Ambient Rthja K/W –
free air - 60 -
device on PCB 2) - 33 -
1) Not subject to production test, specified by design.
2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.

Datasheet 8 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Power Stages

5 Power Stages
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.

5.1 Input Circuit

Figure 4 shows the input circuit of the BTS50080-1TMB. The current source to Vbb ensures that the device
switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses.

VbIN
Rbb Vbb

I VZ,IN
IIN IN

VIN

Input.emf
Figure 4 Input Circuit
A high signal at the required external small signal transistor pulls the input pin to ground. A logic supply current IIN
is flowing and the power DMOS switches on with a dedicated slope, which is optimized in terms of EMC emission.

IIN

tON tOFF t
VOUT

90%

50%
(dV/dt)ON (dV/dt)OFF
25%
10%
t
SwitchOn.emf
Figure 5 Switching a Load (resistive)

5.2 Output On-State Resistance

The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 6
shows these dependencies for the typical on-state resistance. The voltage drop in reverse polarity mode is
described in Section 6.3.

Datasheet 9 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Power Stages





 

 
 
 
ȍ
 ȍ





 









 

 

  
Figure 6 Typical On-State Resistance

Vbb = 12 V

Tj = 25°C   







   





   ≥   

 



Figure 7 Typical Output Voltage Drop Limitation

5.3 Output Inductive Clamp

When switching off inductive loads, the output voltage VOUT drops below ground potential due to the involved
inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ).

Datasheet 10 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Power Stages

V bb VON
VBB

IL

OUT V OUT
L,
RL

OutputClamp .emf

Figure 8 Output Clamp

To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop
across the device at a certain level (VON(CL)). See Figure 8 and Figure 9 for details. The maximum allowed load
inductance is limited.

V OUT ON OFF
Vbb

t
VON(CL)
V OUT(CL)

IL

t
InductiveLoad.emf
Figure 9 Switching an Inductance

5.3.1 Maximum Load Inductance

While de-energizing inductive loads, energy has to be dissipated in the BTS50080-1TMB. This energy can be
calculated via the following equation:

V bb – V ON ( CL ) RL ⋅ IL
= V ON ( CL ) ⋅ ------------------------------------ ⋅ ln  1 + ----------------------------------
- + I L ⋅ ------
L
E
RL  V ON(CL) – V bb  R L

In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified equation can be used:

1 V ON(CL)
E = --- LI L 2 ⋅ -----------------------------------
2 V ON(CL) – V bb

The energy, which is converted into heat, is limited by the thermal design of the component. For given starting
currents the maximum allowed inductance is therefore limited. See Figure 10 for the maximum allowed
inductance at Vbb=12V.

Datasheet 11 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Power Stages

Vbb = 12 V  

Tj(o) ≤ 150°C
 





 
 



Figure 10 Maximum load inductance for single pulse, Tj(0) ≤ 150°C.

Datasheet 12 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Power Stages

5.4 Electrical Characteristics

Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.

General
5.4.1 Operating voltage 1) Vbb(on) 5.5 - 38 V VIN = 0 V
5.4.2 Undervoltage shutdown 2) VbIN(u) - 2.5 3.5 V Tj = 25 °C
5.4.3 Undervoltage restart of charge Vbb(ucp) - 4 5.5 V –
pump
5.4.4 Operating current IIN - 1.4 2.2 mA –
5.4.5 Stand-by current Ibb(OFF) µA IIN = 0 A
Tj = -40 ... 120 °C - 3 6
Tj = 150 °C - 6 14

Input characteristics
5.4.6 Input current for IIN(on) - 1.4 2.2 mA VbIN ≥ Vbb(ucp) - VIN
turn-on
5.4.7 Input current for IIN(off) - - 30 µA –
turn-off

Output characteristics
5.4.8 On-state resistance RDS(ON) mΩ VIN = 0 V, IL = 10 A,
Tj = 25 °C - 7 - (Tab to pin 1, 2, 6
Tj = 150 °C - 13 16 and 7)
Vbb = 5.5 V, Tj = 25 °C - 9.5 -
Vbb = 5.5 V, Tj = 150 °C - 17 22
5.4.9 Output voltage drop limitation at VON(NL) - 30 60 mV –
small load currents
5.4.10 Nominal load current IL(nom) 9.5 12 - A Ta = 85 °C,
(Tab to pin 1, 2, 6 and 7) 3) 4) VON ≤ 0.5 V,
Tj ≤ 150 °C
ISO load current IL(ISO) 37.5 48 - A Tc = 85 °C,
(Tab to pin 1, 2, 6 and 7) 4) VON ≤ 0.5 V,
Tj ≤ 150 °C
5.4.11 Output clamp VON(CL) 39 42 - V IL = 40 mA,
Tj = 25 °C
5.4.12 Inverse current output voltage -VON(inv) mV IL = -10 A,
drop 2) 5) RIS = 1 kΩ
(Tab to pin 1, 2, 6 and 7)
Tj = 25 °C - 700 -
Tj = 150 °C - 300 -

Timings
5.4.13 Turn-on time to tON - 300 550 µs RL = 2.2 Ω
90% VOUT
5.4.14 Turn-off time to tOFF - 300 600 µs RL = 2.2 Ω
10% VOUT

Datasheet 13 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Power Stages

Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
5.4.15 Turn-on delay after inverse td(inv) - 1 - ms Vbb > VOUT,
operation 2) VIN(inv) = VIN(fwd) = 0V
5.4.16 Slew rate On (dV / dt)ON - 0.2 0.35 V/µs RL = 2.2 Ω
25% to 50% VOUT
5.4.17 Slew rate Off -(dV/dt)OFF - 0.2 0.45 V/µs RL = 2.2 Ω
50% to 25% VOUT
1) Please mind the limitations of the embedded protection functions. See Chapter 4.1 and Chapter 6 for details.
2) Not subject to production test, specified by design
3) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.
4) Not subject to production test, parameters are calculated from RDS(ON) and Rth
5) During inverse operation (IL < 0 A, VbIN > 0 V), a current through the intrinsic body diode causing a voltage drop of VON(inv)
results in a delayed switch on with a time delay td(inv) after the transition from inverse to forward operation. A sense current
IIS(fault) can be provided by the pin IS until standard forward operation is reached.

Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.

Datasheet 14 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Protection Functions

6 Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are neither designed for continuous nor repetitive operation.

6.1 Over-Load Protection

The load current IL is limited by the device itself in case of over-load or short circuit to ground. There are multiple
steps of current limitation ILx(SC) which are selected automatically depending on the voltage drop VON across the
power DMOS. Please note that the voltage at the OUT pin is Vbb - VON. Figure 11 shows the dependency for a
typical device.

150
I L(SC) typ.
T j = 25°C
125
A

100

75

50

25

0
0 10 20 V
30 40
V ON(SC) V ON

Figure 11 Typical Current Limitation

Depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across
the device varies.
Whenever the resulting voltage drop VON exceeds the short circuit detection threshold VON(SC), the device will
switch off immediately and latch until being reset via the input. The VON(SC) detection functionality is activated,
when VbIN > 10 V typ. and the blanking time td(SC1) expired after switch on.
In the event that either the short circuit detection via VON(SC) is not activated or that the on chip temperature sensor
senses over-temperature before the blanking time td(SC1) expired, the device switches off resulting from over-
temperature detection. After cooling down with thermal hysteresis, the device switches on again. The device will
react as during normal switch on triggered by the input signal. Please refer to Figure 12 and Figure 19 for details.

Datasheet 15 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Protection Functions

VON(SC) detection Over temperature detection

IIN IIN
t t
VON IL
V ONx > VON(SC)
ILx(SC) t t
IL
tm
Τj
thermal hysteresis

td(SC1) t t
V_ON_detect .emf Over_Temp.emf
Figure 12 Overload Behavior

6.2 Short circuit impedance

The capability to handle single short circuit events depends on the battery voltage as well as on the primary and
secondary short impedance. Figure 13 outlines allowable combinations for a single short circuit event of
maximum, secondary inductance for given secondary resistance.


  #


Vbb LSC "
5uH 
IN OUT


PROFET R SC
10mΩ
IS 
V bb

SHORT
LO AD

CIRCUIT 

short_circuit.emf








Ω 




Figure 13 Short circuit

Datasheet 16 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Protection Functions

6.3 Reverse Polarity Protection - Reversafe®

The device can not block a current flow in reverse polarity condition. In order to minimize power dissipation, the
device offers Reversave® functionality. In reverse polarity condition the channel will be switched on provided a
sufficient gate to source voltage is generated VGS ≈ VRbb. Please refer to Figure 14 for details.
-Vbb
IRbb Rbb Vbb

Logic
RIN IN
-IL
IS
-I IN

LOAD
-IIS
D RIS
signal ground power ground
Reverse.emf

Figure 14 Reverse battery protection

Additional power is dissipated by the integrated Rbb resistor. Use following formula for estimation of overall power
dissipation Pdiss(rev) in reverse polarity mode.

2 2
P diss(rev) ≈ R ON(rev) ⋅ I L + R bb ⋅ I Rbb

For reverse battery voltages up to Vbb < 16 V the pin IN or the pin IS should be low ohmic connected to signal
ground. This can be achieved e.g. by using a small signal diode D in parallel to the input switch or by using a small
signal MOSFET driver. For reverse battery voltages higher then Vbb = 16 V an additional resistor RIN is
recommended. The overall current through Rbb should not be above 80 mA.

1 1 0.08A
--------- + -------- = -------------------------------
R IN R IS V bb – 12V

Note: No protection mechanism is active during reverse polarity. The IC logic is not functional.

Datasheet 17 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Protection Functions

6.4 Over-Voltage Protection

Beside the output clamp for the power stage as described in Section 5.3 there is a clamp mechanism
implemented for all logic pins. See Figure 15 for details.

Rbb
Vbb

VZ,IN

VZ,IS

Logic
IN

IS OUT OverVoltage .emf

Figure 15 Over-Voltage Protection

6.5 Loss of Ground Protection

In case of complete loss of the device ground connections the BTS50080-1TMB securely changes to or remains
in off state.

6.6 Loss of Vbb Protection

In case of complete loss of Vbb the BTS50080-1TMB remains in off state.
In case of loss of Vbb connection with charged inductive loads a current path with load current capability has to be
provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode, or a varistor
(VZL+VD < 30 V or VZb+VD < 16 V if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited
to -120 mA. Please refer to Figure 16 for details.

V bb
Vbb
Rbb Vbb R bb Vbb

VD
Logic
Logic

IN IS VZb IN IS
VD

RIN RIS inductive RIN inductive

VZL R IS
LOAD LOAD

Vbb_disconnect_A.emf Vbb_disconnect_B.emf
Figure 16 Loss of Vbb

Datasheet 18 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Protection Functions

6.7 Electrical Characteristics

Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.

Over-Load Protection
6.7.1 Load current limitation1) 2) IL6(SC) A VON = 6 V,
Tj = -40 °C - 140 170 (Tab to pin 1, 2, 6
Tj = +25 °C - 130 - and 7)
Tj = +150 °C 90 120 -
6.7.2 Load current limitation 2) IL12(SC) A VON = 12 V,
Tj = -40 °C - 105 130 tm = 170 µs,
Tj = +25 °C - 95 - (Tab to pin 1, 2, 6
Tj = +150 °C 55 85 - and 7)
6.7.3 Load current limitation1) 2) IL18(SC) A VON = 18 V,
Tj = -40 °C - 75 100 (Tab to pin 1, 2, 6
Tj = +25 °C - 70 - and 7)
Tj = +150 °C 45 65 -
6.7.4 Load current limitation 2) IL24(SC) A VON = 24 V,
Tj = -40 °C - 47 70 tm = 170 µs,
Tj = +25 °C - 46 - (Tab to pin 1, 2, 6
Tj = +150 °C 28 45 - and 7)
6.7.5 Load current limitation1) 2) IL36(SC) A VON = 36 V,
Tj = -40 °C - 27 40 (Tab to pin 1, 2, 6
Tj = +25 °C - 27 - and 7)
Tj = +150 °C 15 27 -
6.7.6 Short circuit shutdown detection VON(SC) 2.5 3.5 4.5 V VbIN > 10 V typ.,
voltage 1) Tj = 25 °C
6.7.7 Short circuit shutdown delay after td(SC1) 350 650 1200 µs VON > VON(SC)
input current pos. slope3)
6.7.8 Thermal shut down temperature Tj(SC) 150 175 - °C -
1)

6.7.9 Thermal hysteresis 1) ∆ Tj - 10 - K -

Reverse Polarity
6.7.10 On-State resistance in case of RON(rev) mΩ VIN = 0 V,
reverse polarity IL = -10 A,
Vbb = -8 V, Tj =25 °C 1) - 8.5 - RIS = 1 kΩ,
Vbb = -8 V, Tj =150 °C 1) - 13 18 (pin 1, 2, 6 and 7 to
Vbb = -12 V, Tj =25 °C - 8 - TAB)
Vbb = -12 V, Tj =150 °C - 13 19
6.7.11 Integrated resistor in Vbb line Rbb - 100 150 Ω Tj = 25 °C
Over-Voltage
6.7.12 Over-voltage protection VZ V Ibb = 15 mA
Input pin VZ,IN 63 67 - V
Sense pin VZ,IS 63 67 - V
1) Not subject to production test, specified by design

Datasheet 19 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Protection Functions

2) Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12.
3) min. value valid only if input “off-signal” time exceeds 30 µs

Datasheet 20 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Diagnosis

7 Diagnosis
For diagnosis purpose, the BTS50080-1TMB provides an IntelliSense signal at the pin IS.
The pin IS provides during normal operation a sense current, which is proportional to the load current as long as
VbIS > 5 V. The ratio of the output current is defined as kILIS = IL/IIS. During switch-on no current is provided, until
the forward voltage drops below VON < 1 V typ. The output sense current is limited to IIS(lim).
The pin IS provides in case of any fault conditions a defined fault current IIS(fault) as long as VbIS > 8 V. Fault
conditions are over-current (VON > 1 V typ.), current limit or over-temperature switch off.
The pin IS provides no current during open load in ON and de-energisation of inductive loads.

Vb,IS
Vbb R bb VZ,IS

IIS I IS(fault)

IS
VIS R IS
Sense.emf
Figure 17 Block Diagram: Diagnosis

Table 1 Truth Table

Parameter Input Current Level Output Level Current Sense IIS
1)
Normal operation L L ≈ 0 (IIS(LL))
H1) H nominal
Overload L L ≈ 0 (IIS(LL))
H H IIS(fault)
Short circuit to GND L L ≈ 0 (IIS(LL))
H L IIS(fault)
Overtemperature L L ≈ 0 (IIS(LL))
H L IIS(fault)
Short circuit to Vbb L H ≈ 0 (IIS(LL))
H H < nominal2)
Open load L Z1) ≈ 0 (IIS(LL))
H H ≈ 0 (IIS(LH))
1) H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit
2) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.

The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load current. Please refer to
Figure 18 for details. A typical resistor RIS of 1 kΩ is recommended.

Datasheet 21 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Diagnosis

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Figure 18 Current sense ratio kILIS1)
Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ON-
state can be found in Figure 19.
Note: During operation at low load current and at activated forward voltage drop limitation the “two level control”
of VON(NL) can cause a sense current ripple synchronous to the “two level control” of VON(NL) . The ripple
frequency increases at reduced load currents.

IIN normal operation I IN short over-temperature

VON VON<1V typ. VON>1V typ. t VON VON>VON(SC) VON<1V typ. t

IL IL2 t IL t
I L1 I Lx(SC)
IL

IIS IIS(lim) I IS(fault) t IIS IIS(fault) I IS(fault) t

IIS2
0.9*I IS1 I IS1
IIS(LL)
t t
t son(IS) tslc(IS) tdelay(fault)
SwitchOn.emf
Figure 19 Timing of Diagnosis Signal in ON-state

1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Datasheet in
Section 7.1 (Position 7.1.1).

Datasheet 22 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Diagnosis

7.1 Electrical Characteristics

Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Load Current Sense
7.1.1 Current sense ratio, static on- kILIS - 12.5 - k VIN = 0 V,
condition IIS < IIS(lim)
IL = 35 A 11 12.6 14
IL = 10 A 10.5 12.6 14.3
IL = 2.5 A 10 12.5 17
IL = 0.5 A 7 14.5 26
IIN = 0 (e.g. during de energizing of disabled - -
1)
inductive loads)
7.1.2 Sense saturation current 1) IIS(lim) 4.0 6 7.5 mA VON < 1 V, typ.
7.1.3 Sense current under fault IIS(fault) 4.0 5.2 7.5 mA VON > 1 V, typ.
conditions
7.1.4 Current sense leakage current IIS(LL) – 0.1 0.5 µA IIN = 0
7.1.5 Current sense offset current IIS(LH) – 0.1 1 µA VIN = 0, IL ≤ 0
7.1.6 Current sense settling time to 90% tson(IS) – 250 500 µs IL = 0 20 A
IIS_stat. 1)
7.1.7 Current sense settling time to 90% tslc(IS) – 50 100 µs IL = 10 20 A
IIS_stat. 1)
7.1.8 Fault-Sense signal delay after input tdelay(fault) 350 650 1200 µs VON > 1 V, typ.
current positive slope
1) Not subject to production test, specified by design

Datasheet 23 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Package Outlines

8 Package Outlines

10 ±0.2
A B
9.9 ±0.2 4.4
1)
8.5 1.27 ±0.1

0...0.3
1)
15.65 ±0.3
12.95

3.7 -0.15
17 ±0.3

2.8 ±0.2
0.05

9.25 ±0.2
2.4
11±0.5
13 ±0.5

0...0.15 0.5 ±0.1

7 x 0.6 ±0.1 2.4
6 x 1.27
0.25 M A B C

1)
Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.

Figure 20 PG-TO220-7-12

Green Product
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Packages”: http://www.infineon.com/packages. Dimensions in mm

Datasheet 24 Rev. 1.0, 2008-01-23

 Smart High-Side Power Switch
BTS50080-1TMB

Revision History

9 Revision History

Version Date Changes

Datasheet 2008-01-21 Initial version of datasheet
Rev. 1.0

Datasheet 25 Rev. 1.0, 2008-01-23

Edition 2008-01-23
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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