LTspice-model of Thermoelectric Peltier-Seebeck Element
LTspice-model of Thermoelectric Peltier-Seebeck Element
LTspice-model of Thermoelectric Peltier-Seebeck Element
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Vladimir Kubov
Petro Mohyla Black Sea State University
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Abstract – A simple, symmetric, convertible into electric temperature difference is known as the Seebeck effect and is
generator mode LTspice-model of Peltier-Seebeck element is used in thermoelectric generators - TEG.
proposed. The model parameters are extracted from the
experimental measurement results of the electrical and thermal Theoretical basis of thermoelectric converters viewed in
characteristics of the real elements. details in [1-4].
There are a few interesting SPICE models of the
Keywords — Thermoelectric cooler (TEC), Thermoelectric
Thermoelectric Peltier Element [2-4]. Significant
generator (TEG), Peltier effect, Seebeck effect, Thermoelectric
equivalence, SPICE, LTspice, model.
disadvantages of these models are insufficient clarity and non-
symmetric structure of the electric schemes, which make
I. INTRODUCTION difficult an understanding about physical essence of
thermoelectric phenomena. On the other hand, lack of physical
During the electric current flows in a non-uniform electric transparency of existing SPICE-models makes it difficult to
circuit, there are possible the situations when energy in some transfer and adapt to the interpretation of the extended range.
circuit paths absorbs, and in other – generates. Traditionally
relies, that the energy absorption corresponds to the positive Particularly, in [5] suggests that the processes of heat
sign, and generation to the negative sign. A value and a sign of redistribution take place in photoelectric solar panels, which is
power Pi=Ui·Ii for individual path of circuit are determined by demonstrated in so-called “Hot spots” [6].
multiplying of voltage U and current I.
II. MODEL OF PELTIER-SEEBECK DEVICE
Heat output that flows from cold to hot part of the element
defined by the equation
PQ ·I
Fig. 1. Electric circuit with two Peltier’s contacts and internal resistance.
where П represents Peltier coefficient (has dimension of
The simplest Peltier circuit consists of 3 elements: two voltage and complies to effective contact potential difference),
voltage sources V1, V2 and an active resistance as it can be and I represents current. Equation (1) can be represented in the
seen in Fig. 1. A general current I flows in a circuit, so that in form of the balance equation of the thermal power, which
each of the elements generates power: PV1=–V1·I; PV2=V2·I; generates on cold and hot sides of the element.
PR=R·I2. Here, we take into account, that for element V1 the PQ Pc – Ph Pc – Ph / 2
sign of the voltage drop is opposite to the sign of
Electromotive force (EMF): – U1=–V1, and for an active Here Pc,h=±Π·I, and the sign is determined by direction of
resistance UR=I·R. contact potential difference relatively to current.
Such detail consideration of the obvious rations is Equation (3) represents EMF, which generates by
important for understanding the processes of the heat temperature difference on two sides of the element.
redistribution in electric circuits, particularly in circuits with
contact potential difference. In case if all energy conversions VS Th – Tc
in electric circuit in Fig.1 connected with heat energy, then where Th,c - temperature of parts, α - Seebek coefficient.
element V1 will absorb energy from surroundings and cool
down, while element V2 will generate energy and heat, and Thompson equation connects Peltier coefficient and
element R will produce a Joule heating and heat too. In case if Seebeck coefficient through absolute temperature.
EMF (contact potential difference) of elements V1 and V2 are
similar, and a power from active resistance R a lot less then ·T
power from V1 and V2, then will be carried a heat junction While we design Peltier element with two voltage sources
from element V1 to element V2. This junction is called a with different polarity, with contact Peltier voltages, which
Peltier effect. Peltier effect used in thermoelectric coolers – determined through the temperature of parts
TEC. The opposite effect – the electricity generation, due to
c , h ·Tc , h
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2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
TABLE I. MEASURED PELTIER-SEEBECK TEG CHARACTERISTICS
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2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Fig.6 shows the results of modeling dependences the surface These data naturally match the specified parameters of the
temperatures of the (Peltier) element on the supply voltage. model: Se = 40mV/K; R0 = 6Ω.
Fig. 6. Simulated Voltage dependences of Temperatures for Cold and Hot Fig. 7. Simulated Voltage dependences of Temperatures for Cold and Hot
sides of TEC.
sides for several values of TEC internal electrical resistance.
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2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
corresponds to the temperature of the cold side of the element It is advisable to modify the model to include a number of
in the normal power supply +12V (cooling mode). unit cells and for electric-heat Q-factor. This allows relatively
easy to change settings for other types of Peltier elements.
The developed model can be useful both in the calculation
of the cooling systems for electric and thermoelectric
generator, and in the educational process to illustrate the work
principles of the thermoelectric elements.
APPENDIX SPICE NETLIST
* PeltierTest3.asc
Vte Text 0 21
V1 p 0 12
RqR Text Thot 0.2
XX1 p 0 Tcold Thot peltier params: Se=40m R0=6 Cq=15 Rq=3
Fig. 10. LTspice-model of experimental TEC setup for dynamic tests.
* block symbol definitions
Group of upper curves corresponds to the temperature of the .subckt peltier p n Tc Th
conditionally cold side in reverse mode -12V (heating mode). * -------- Current -----------
B01 n0 p V=Pe(V(Tc)+T0)
Group of curves in the middle corresponds to the B02 p0 n V=Pe(V(Th)+T0)
temperature of the hot side of the element. Re n0 p0 {R0}
* --------- Heat ---------------
B1 0 Tc I=V(p,n0)*I(B02)
B2 0 Th I=V(p0,n)*I(B02)
B12 0 N001 I=V(n0,p0)*I(B02)
Rq1 N001 Tc {Rq/2}
Rq2 Th N001 {Rq/2}
Cq1 Tc 0 {Cq/2}
Cq2 Th 0 {Cq/2}
* --- params & function ---
.param Se=40m R0=6
.param Cq=15 Rq=3
.func Pe(T) {Se*T}
.param T0=273
.ends peltier
.dc V1 -12 16 0.1
.backanno
Fig. 11. Simulated Time dependences of Temperature for TEC Cold and Hot .end
sides. The direct (Cooling) and reverse (Heating) modes are presented.
REFERENCES
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[7] V.I. Kubov, Issledovanie shem impulsnyih istochnikov pitaniya v SwCAD/LTspice
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