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    Vishal: Advanced Semiconductor Lab King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi Arabia 23955

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    jose taboada
    This document summarizes an experiment studying dielectric breakdown in hafnium dioxide (HfO2). It shows current-voltage characteristics of an HfO2 dielectric at different voltage biases. Up to 4V, very small currents (<1E-9A) were observed. At 5V, microamp currents indicated dielectric breakdown had occurred. Once breakdown happened at 5V, high currents were then observed even at lower voltages like 1V, demonstrating complete breakdown of the dielectric.

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    Vishal: Advanced Semiconductor Lab King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi Arabia 23955

    Uploaded by

    jose taboada
    25 views6 pages
    This document summarizes an experiment studying dielectric breakdown in hafnium dioxide (HfO2). It shows current-voltage characteristics of an HfO2 dielectric at different voltage biases. Up to 4V, very small currents (<1E-9A) were observed. At 5V, microamp currents indicated dielectric breakdown had occurred. Once breakdown happened at 5V, high currents were then observed even at lower voltages like 1V, demonstrating complete breakdown of the dielectric.

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    HfO2 Breakdown

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    This document summarizes an experiment studying dielectric breakdown in hafnium dioxide (HfO2). It shows current-voltage characteristics of an HfO2 dielectric at different voltage biases. Up to 4V, very small currents (<1E-9A) were observed. At 5V, microamp currents indicated dielectric breakdown had occurred. Once breakdown happened at 5V, high currents were then observed even at lower voltages like 1V, demonstrating complete breakdown of the dielectric.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views6 pages

    Vishal: Advanced Semiconductor Lab King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi Arabia 23955

    Uploaded by

    jose taboada
    This document summarizes an experiment studying dielectric breakdown in hafnium dioxide (HfO2). It shows current-voltage characteristics of an HfO2 dielectric at different voltage biases. Up to 4V, very small currents (<1E-9A) were observed. At 5V, microamp currents indicated dielectric breakdown had occurred. Once breakdown happened at 5V, high currents were then observed even at lower voltages like 1V, demonstrating complete breakdown of the dielectric.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    HfO2 Dielectric Breakdown Study

    Vishal

    Advanced Semiconductor Lab


    King Abdullah University of Science and Technology (KAUST)
    Thuwal, Saudi Arabia 23955
    HfO2 Dielectric (Feb. 2022)

    4.00E-09

    3.00E-09
    I(A)

    2.00E-09

    1.00E-09

    0.00E+00

    -5 0 5 10 15
    V(Volt)

    Xiaohang Li
    Current Condition(At Different Voltage Bias)

    5.00E-11
    1.00E-10

    4.00E-11

    3.00E-11 5.00E-11

    2.00E-11
    I(A)

    I(A)
    0.00E+00
    1.00E-11

    0.00E+00 -5.00E-11

    -1.00E-11

    -1.00E-10
    -2.00E-11

    -1.0 -0.5 0.0 0.5 1.0 -2 -1 0 1 2


    V(Volt) V(Volt)

    Xiaohang Li
    Current Condition(At Different Voltage Bias)

    2.00E-10 2.00E-10

    0.00E+00
    1.00E-10

    -2.00E-10
    0.00E+00

    I(A)
    -4.00E-10
    I(A)

    -1.00E-10
    -6.00E-10

    -2.00E-10 -8.00E-10

    -1.00E-09
    -3.00E-10

    -3 -2 -1 0 1 2 3
    -1.20E-09
    -4 -2 0 2 4
    V(Volt)
    V(Volt)

    • Upto 4V, It is showing very small current (<1E-9A)


    Xiaohang Li
    Current Condition(At Different Voltage Bias)

    3E-6
    • At 5V, It shows microamps current.
    I(A)

    -3E-6

    -6 -4 -2 0 2 4 6
    V(Volt)

    Xiaohang Li
    Complete Breakdown

    2E-6
    • Once Dielectric breakdown at 5 V then
    it is showing a high current even at 1 V.
    So It is a “complete breakdown.”
    I(A)

    7E-7
    -1.0 -0.5 0.0 0.5 1.0
    V(Volt)

    Xiaohang Li

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