6N137 / VO2601 / 11 / VO2630 / 31 / VO4661: High Speed Optocoupler, 10 MBD

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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661

Vishay Semiconductors

High Speed Optocoupler, 10 Mbd

Features
Choice of CMR performance of 10 kV/s, 5 kV/s, and 100 V/s High speed: 10 Mbd typical e3 + 5 V CMOS compatibility Guaranteed AC and DC performance over temperature: - 40 to + 100 C Temp. Range Pure tin leads Meets IEC60068-2-42 (SO2) and IEC60068-2-43 (H2S) requirements Low input current capability: 5 mA Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Single channel

Dual channel

NC A C NC

1 2 3 4

8 7 6 5

VCC VE VO GND
18921_5

A1 1 C1 C2 A2
2 3 4

8 7 6 5

VCC VO1 VO2 GND

6N137, VO2601, VO2611

VO2630, VO2631, VO4661

Agency Approvals
UL1577, File No. E52744 System Code H or J, Double Protection CUL - File No. E52744, equivalent to CSA bulletin 5A DIN EN 60747-5-2 (VDE0884) Reinforced insulation rating per IEC60950 2.10.5.1 VDE available with Option 1

open collector Schottky clamped transistor output. The VO2630, VO2631 and VO4661 are dual channel 10MBd optocouplers. For the single channel type, an enable function on pin 7 allows the detector to be strobed. The internal shield provides a guaranteed common mode transient immunity of 5 kV/s for the VO2601 and VO2631 and 10 kV/s for the VO2611 and VO4661. The use of a 0.1 F bypass capacitor connected between pin 5 and 8 is recommended.

Order Information
Part 6N137 6N137-X006 Remarks 100 V/s, Single channel, DIP-8 100 V/s, Single channel, DIP-8 400 mil 100 V/s, Single channel, SMD-8 5 kV/s, Single channel, DIP-8 5 kV/s, Single channel, DIP-8 400 mil 5 kV/s, Single channel, SMD-8 10 kV/s, Single channel, DIP-8 10 kV/s, Single channel, DIP-8 400 mil 10 kV/s, Single channel, SMD-8 100 V/s, Dual channel, DIP-8 100 V/s, Dual channel, DIP-8 400 mil 100 V/s, Dual channel, SMD-8 5 kV/s, Dual channel, DIP-8 5 kV/s, Dual channel, DIP-8 400 mil 5 kV/s, Dual channel, SMD-8 10 kV/s, Dual channel, DIP-8 10 kV/s, Dual channel, DIP-8 400 mil 10 kV/s, Dual channel, SMD-8

Applications
Microprocessor System Interface PLC, ATE input/output isolation Computer peripheral interface Digital Fieldbus Isolation: CC-Link, DeviceNet, Profibus, SDS High speed A/D and D/A conversion AC Plasma Display Panel Level Shifting Multiplexed Data Transmission Digital control power supply Ground loop elimination

6N137-X007 VO2601 VO2601-X006 VO2601-X007 VO2611 VO2611-X006 VO2611-X007 VO2630 VO2630-X006 VO2630-X007 VO2631 VO2631-X006

Description
The 6N137, VO2601 and VO2611 are single channel 10 Mbd optocouplers utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-transistor output, providing less leakage compared to an
Document Number 84732 Rev. 1.0, 07-Jun-05

VO2631-X007 VO4661 VO4661-X006 VO4661-X007

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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors Truth Table (Positive Logic)
LED ON OFF ON OFF ON OFF ENABLE H H L L NC NC OUTPUT L H H H L H

Absolute Maximum Ratings


Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Average forward current1) Average forward current Reverse input voltage Enable input voltage Enable input current Surge current
1) 2) 1) 2)

Test condition

Symbol IF IF VR VE IE

Value 20 15 5 VCC + 0.5 V 5 200

Unit mA mA V V mA mA

1)

t = 100 s

IFSM

Package: Single DIP-8 Package: Dual DIP-8

Output
Parameter Supply voltage Output current Output voltage Output power dissipation
1) 2) 1)

Test condition 1 minute max.

Symbol VCC IO VO PO PO

Value 7 50 7 85 60

Unit V mA V mW mW

Output power dissipation2) Package: Single DIP-8 Package: Dual DIP-8

Coupler
Parameter Storage temperature Operating temperature Lead solder temperature1) Solder reflow temperature Isolation test voltage
1) 2) 2)

Test condition

Symbol Tstg Tamb

Value - 55 to + 150 - 40 to + 100 260 260

Unit C C C C VRMS

for 10 sec. for 1 minute t = 1.0 sec. VISO

5300

Package: DIP-8 through hole Package: DIP-8 SMD

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Document Number 84732 Rev. 1.0, 07-Jun-05

6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors Recommended Operating Conditions
Parameter Operating temperature Supply voltage Input current low level Input current high level Logic high enable voltage Logic low enable voltage Output pull up resistor Fanout RL = 1 k Test condition Symbol Tamb VCC IFL IFH VEH VEL RL N Min - 40 4.5 0 5 2.0 0.0 330 Typ. Max 100 5.5 250 15 VCC 0.8 4K 5 Unit C V A mA V V -

Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Input forward voltage Reverse current Input capacitance Test condition IF = 10 mA VR = 5.0 V f = 1 MHz, VF = 0 V Symbol VF IR CI Min 1.1 Typ. 1.4 0.01 55 Max 1.7 10 Unit V A pF

Output
Parameter High level supply current (single channel) High level supply current (dual channel) Low level supply current (single channel) Low level supply current (dual channel) High level output current Low level output voltage Input treshold current High level enable current Low level enable current High level enable voltage Low level enable voltage Document Number 84732 Rev. 1.0, 07-Jun-05 Test condition VE = 0.5 V, IF = 0 mA Symbol ICCH Min Typ. 4.1 Max 7.0 Unit mA

VE = VCC, IF = 0 mA IF = 0 mA

ICCH ICCH

3.3 6.9

6.0 12.0

mA mA

VE = 0.5 V, IF = 10 mA,

ICCL

4.0

7.0

mA

VE = VCC, IF = 10 mA IF = 10 mA

ICCL ICCL

3.3 6.5

6.0 12.0

mA mA

VE = 2.0 V, VO = 5.5 V, IF = 250 A VE = 2.0 V, IF = 5 mA, IOL (sinking) = 13 mA VE = 2.0 V, VO = 5.5 V, IOL (sinking) = 13 mA VE = 2.0 V VE = 0.5 V

IOH VOL ITH IEH IEL VEH VEL 2.0

0.002 0.2 2.4 - 0.6 - 0.8

1 0.6 5.0 - 1.6 - 1.6

A V mA mA mA V

0.8

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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All Typicals at Ta = 25 C, VCC = 5 V. Parameter Propagation delay time to high output level Propagation delay time to low output level Pulse width distortion Propagation delay skew Output rise time (10 - 90 %) Output fall time (90 - 10 %) Propagation delay time of enable from VEH to VEL Propagation delay time of enable from VEL to VEH
*

Test condition RL = 350 , CL = 15 pF

Symbol tPLH tPLH

Min 20

Typ. 48

Max 75
*

Unit ns ns ns ns ns ns ns ns ns ns

100 25 50 75* 100 2.9 8 23 7 12 11 35 40

RL = 350 , CL = 15 pF

tPHL tPHL

RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF, VEL = 0 V, VEH = 3 V RL = 350 , CL = 15 pF, VEL = 0 V, VEH = 3 V

| tPHL - tPLH | tPSK tr tf tELH tEHL

75 ns applies to the 6N137 only, a JEDEC registered specification

VCC Single Channel Pulse Gen. Zo = 50 t f = t r = 5 ns Input IF Monitoring Node RM 1 IF 2 3 4 VCC 8 VE 7 VOUT 6 GND 5 RL 0.1 F Bypass Input IF Output VO Monitoring Node C L = 15 pF tPHL

IF = 7.5 mA IF = 3.75 mA 0 mA VOH 1.5 V VOL tPL H

Output VO

The Probe and Jig Capacitances are included in CL

18964-2

Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf

Pulse Gen. Zo = 50 t f = t r = 5 ns IF 1 Input Monitoring Node RM 2 3 4


18963-2

VCC Dual Channel VCC 8 7 6 GND 5 0.1 F Bypass RL Output V O Monitoring Node

CL= 15 pF

Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf

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Document Number 84732 Rev. 1.0, 07-Jun-05

6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors

Pulse Gen. Zo = 50 t f = t r = 5 ns 1 7.5 mA IF 2 3 4

Input VE Monitoring Node Single Channel VCC 8 VE 7 VOUT 6 GND 5

VCC

RL 0.1 F Bypass Output VO Monitoring Node C L = 15 pF Input VE tEHL tELH Output VO

3V 1.5 V

1.5 V

The Probe and Jig Capacitances are included in CL

18975-2

Figure 3. Single Channel Test Circuit for tEHL and tELH

Common Mode Transient Immunity


Parameter Common mode transient immunity (high) Test condition |VCM| = 10 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C 1) |VCM| = 50 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C 2) |VCM| = 1 kV, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C |VCM| = 10 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25 C 1) |VCM| = 50 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25 C 2) |VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25 C 3)
1) 2) 3) 3)

Symbol | CMH |

Min 100

Typ.

Max

Unit V/s

| CMH | | CMH | | CML | | CML | | CML |

5000 10000 100 5000 10000

10000 15000

V/s V/s V/s

10000 15000

V/s V/s

For 6N137 and VO2630 For VO2601 and VO2631 For VO2611 and VO4661

VCC IF 1 B A V FF 2 3 4 Single Channel VCC 8 VE 7 VOUT 6 GND 5 VO 0.5 V RL 0.1 F Bypass Output VO Monitoring Node V CM 0 V VO 5 V V (PEAK) CM Switch AT A: IF = 0 mA VO(min.) Switch AT A: IF = 7.5 mA VO(max.) CMH

CML

V CM + Pulse Generator ZO = 50
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity

18976-2

Document Number 84732 Rev. 1.0, 07-Jun-05

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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors
IF Dual Channel B 1 A 2 V FF 3 4 GND 7 6 5 VCC 8 +5V RL Output VO Monitoring Node 0.1 F Bypass

18977-1

V CM + Pulse Generator ZO = 50

Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity

Safety and Insulation Ratings


As per IEC60747-5-2, 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Climatic Classification (according to IEC 68 part 1) Comparative Tracking Index VIOTM VIORM PSO ISI TSI Creepage Clearance Creepage Clearance standard DIP-8 standard DIP-8 400mil DIP-8 400mil DIP-8 7 7 8 8 0.2 CTI 175 8000 630 500 300 175 Test condition Symbol Min Typ. 55/110/21 399 V V mW mA C mm mm mm mm mm Max Unit

Insulation thickness, reinforced rated per IEC60950 2.10.5.1

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Document Number 84732 Rev. 1.0, 07-Jun-05

6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.7
V F Forward Voltage ( V )
Low Level Supply Current ( mA ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 40 VCC = 5 V IF = 10 mA VCC = 7 V IF = 10 mA

1.6 1.5 1.4 1.3 1.2 1.1 1.0 40 20 IF = 10 mA

IF = 50 mA IF = 20 mA

CCl

IF = 1 mA

20

20

40

60

80

100

20

40

60

80

100

17614

17610

Tamb Ambient Temperature ( C )

Tamb Ambient Temperature ( C )

Figure 6. Forward Voltage vs. Ambient Temperature

Figure 9. Low Level Supply Current vs. Ambient Temperature

1.60 1.55 V F Forward Voltage ( V ) 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 0
17611

High Level Supply Current ( mA )

3.5 3.4 3.3 3.2 3.1 3.0 2.9 2.8 40 VCC = 5 V IF = 0.25 mA VCC = 7 V IF = 0.25 mA

CCh

10 15 20 25 30 35 40 45 50 IF Forward Current ( mA )

17615

20 0 20 40 60 80 100 Tamb Ambient Temperature ( C )

Figure 7. Forward Voltage vs. Forward Current

Figure 10. High Level Supply Current vs. Ambient Temperature

7 I R Reverse Current ( nA ) 6 5 4 3 2 1 0 40
17613-1

2.8 I th Input Threshold ON Current ( A ) 2.7 2.6 2.5 2.4 2.3 2.2 2.1 40 RL = 4 k RL = 1 k RL = 350

20 0 20 40 60 80 100 Tamb Ambient Temperature ( C )

17616

20 0 20 40 60 80 100 Tamb Ambient Temperature ( C )

Figure 8. Reverse Current vs. Ambient Temperature

Figure 11. Input Threshold ON Current vs. Ambient Temperature

Document Number 84732 Rev. 1.0, 07-Jun-05

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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors
2.6 Input Threshold OFF Current ( A )

50 I oh High Level Output Current ( nA )


2.5 2.4 2.3 2.2 RL = 4 k 2.1 RL = 1 k 2.0 40 20 0 20 40 60 80 100

45 40 35 30 25 20 15 10 5 0 40 20 0 20 40 60 80 100 Tamb Ambient Temperature ( C )

RL = 350

th

17617

Tamb Ambient Temperature ( C )


17620

Figure 12. Input Threshold OFF Current vs. Ambient Temperature

Figure 15. High Level Output Current vs. Ambient Temperature

0.30 Vol Low Level Output Voltage ( V ) 0.25 0.20 0.15 IL = 10 mA 0.10 0.05 0.00 40 IL = 6 mA VCC = 5.5 V IF = 5 mA IL = 16 mA IL = 13 mA

5.5 5.0
Vo Output Voltage ( V )

4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 RL = 4 kW 0 1 2 3 4 5 0.0 RL = 350 W RL = 1 kW

20

20

40

60

80

100
17621

17618

Tamb Ambient Temperature ( C )

IF Forward Input Current ( mA )

Figure 13. Low Level Output Voltage vs. Ambient Temperature

Figure 16. Output Voltage vs. Forward Input Current

60
I ol Low Level Output Current ( mA )

120 IF = 5 mA IF = 10 mA
t P Propagation Delay time ( ns )

50 40 30 20 10 0 40 20

tPLH, 4 k 100 80 60 40 20 0 40 20 tPLH, 350 tPLH, 1 k

tPHL, 350

tPHL, 1 k tPHL, 4 k

20

40

60

80

100
17622

17619

Tamb Ambient Temperature ( _C )

20

40

60

80

100

Tamb Ambient Temperature ( C )

Figure 14. Low Level Output Current vs. Ambient Temperature

Figure 17. Propagation Delay vs. Ambient Temperature

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Document Number 84732 Rev. 1.0, 07-Jun-05

6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors

120
t P Propagation Delay time ( ns )

300 tPLH, 4 k tr, RL = 4 k


t r,f Rise and Fall Time ( ns )

100 80 tPLH, 350 60 40 20 0 5 tPHL, 350

250 200 150 100 tr, RL = 1 k 50 tr, RL = 350 tf, RL = 350 tf, RL = 1 k tf, RL = 4 k

tPLH, 1 k

tPHL, 1 k tPHL, 4 k

17623

7 9 11 13 IF Forward Current ( mA )

15
17626

0 40 20 0 20 40 60 80 100 Tamb Ambient Temperature ( C )

Figure 18. Propagation Delay vs. Forward Current

Figure 21. Rise and Fall Time vs. Ambient Temperature

50 PWD Pulse Width Distortion ( ns )

300
t r,f Rise and Fall Time ( ns )
40 30 20 RL = 1 k 10 0 40 RL = 350 RL = 4 k

tr, RL = 4 k 250 200 150 100 tr, RL = 1 k 50 0 5


17627

tf, RL = 350 tf, RL = 1 k tf, RL = 4 k

tr, RL = 350

17624

20 0 20 40 60 80 100 Tamb Ambient Temperature ( C )

11

13

15

IF Forward Current ( mA )

Figure 19. Pulse Width Distortion vs. Ambient Temperature

Figure 22. Rise and Fall Time vs. Forward Current

60 PWD Pulse Width Distortion ( ns ) 50 40 30 20 10 0 5


17625

60 t e Enable Propagation Delay ( ns )

RL = 4 k

50 teLH = 4 k 40 30 20 10 teHL = 1 k 0 40 teHL = 4 k teLH = 1 k teLH = 350 teHL = 350

RL = 1 k

RL = 350 7 9 11 13 IF Forward Current ( mA ) 15

17628

20 0 20 40 60 80 100 Tamb Ambient Temperature ( C )

Figure 20. Pulse Width Distortion vs. Forward Current

Figure 23. Enable Propagation Delay vs. Ambient Temperature

Document Number 84732 Rev. 1.0, 07-Jun-05

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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A

.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006

.300 (7.62) typ.

10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 39 .008 (.20) .012 (.30)

.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)

Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.

Option 7
.300 (7.62) TYP .

.180 (4.6) .160 (4.1) .315 (8.0) MIN.

.014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92)

.331 (8.4) MIN. .406 (10.3) MAX.


18450-1

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Document Number 84732 Rev. 1.0, 07-Jun-05

6N137 / VO2601 / 11 / VO2630 / 31 / VO4661


Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 84732 Rev. 1.0, 07-Jun-05

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Legal Disclaimer Notice


Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 Revision: 08-Apr-05

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