MBQ25T120FESC 1200V Fieldstop Trench IGBT

MBQ25T120FESC
High speed Fieldstop Trench IGBT

General Description Features

This IGBT is produced using advanced MagnaChip’s Field  High Speed Switching & Low VCE(sat) Loss
Stop Trench IGBT Technology, which provides low VCE(SAT),  VCE(sat) = 2.0V @IC = 25A
high switching performance and excellent quality.  High Input Impedance
 trr = 100ns (typ.) @ diF/dt = 500A/ μs
This device is for PFC, UPS & PV inverter and Welder  Maximum junction temperature 175°C
Applications.  Pb-free ; RoHS compliant
 Ultra Soft, fast recovery anti-parallel diode
Applications  Ultra Narrowed VF distribution control
 PFC  Welder  Positive Temperature coefficient for easy paralleling
 UPS  PV Inverter

TO-247

G
C
E

Maximum Rating
Parameter Symbol Rating Unit
Collector-emitter voltage VCE 1200 V
TC=25°C 50 A
DC collector current, limited by Tvjmax IC
TC=100°C 25 A
Pulsed collector current, tp limited by Tjvjmax ICpuls 100 A
Turn off safe operating area VCE ≤ 1200V, Tvj ≤ 175°C - 100 A
TC=25°C 25
Diode forward current limited by Tvjmax IF A
TC=100°C 12.5
Diode pulsed current, tp limited by Tvjmax IFpuls 100 A
Gate-emitter voltage VGE ±20 V
TC=25°C 348 W
Power dissipation PD
TC=100°C 174 W
Short circuit withstand time
VCC ≤ 600V, VGE = 15V, Tvj = 175°C
tsc 10 μs
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
Operating Junction temperature range Tvj -40~175 °C
Storage temperature range Tstg -55~150 °C
Soldering temperature
260 °C
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

Thermal Characteristic
Parameter Symbol Rating Unit
Thermal resistance junction-to-ambient RθJA 40
Thermal resistance junction-to-case for IGBT RθJC 0.43 °C/W
Thermal resistance junction-to-case for Diode RθJC 1.55

Sep. 2015 Revision 1.0 1 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
Ordering Information
Part Number Marking Temp. Range Package Packing RoHS Status
MBQ25T120FESCTH 25T120FESC -55~175°C TO-247 Tube Halogen Free

Electrical Characteristic (Tvj = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Static Characteristic
Collector-emitter breakdown voltage BVCES IC = 500μA, VGE = 0V 1200 - - V
IC = 25A, VGE = 15V, Tvj = 25°C 2.0 2.4
Collector-emitter saturation voltage VCE(sat) IC = 25A, VGE = 15V, Tvj = 150°C 2.4 V
IC = 25A, VGE = 15V, Tvj = 175°C 2.5
VGE = 0V, Tvj = 25°C 2.1 2.6
Diode forward voltage VF V
IF = 12.5A Tvj = 175°C 1.9
Tvj = 25°C 2.5 3.0
Diode forward voltage VF VGE = 0V, IF = 25A Tvj = 150°C 2.55 V
Tvj = 175°C 2.45
Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.85mA 5.0 6.0 7.0 V
VCE = 1200V, Tvj = 25°C - - 250
Zero gate voltage collector current ICES μA
VGE = 0V Tvj = 175°C - - 2500
Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±250 nA
Transconductance gfs VCE = 20V, IC = 25A, 16 S
Dynamic Characteristic
Total gate charge Qg - 204
VCE = 960V, IC = 25A,
Gate-emitter charge Qge - 34 nC
VGE = 15V
Gate-collector charge Qgc - 94
Input capacitance Cies - 3942 -
VCE = 25V, VGE = 0V,
Reverse transfer capacitance Cres - 72 - pF
f = 1MHz
Output capacitance Coes - 142 -
Internal emitter inductance
LE - 13.0 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current
VGE = 15V, VCC = 600V,
Max. 1000 short circuits IC(SC) - 121 - A
tSC ≤ 10μs, Tvj = 175°C
Time between short circuits: ≥ 1.0s
Switching Characteristic
Turn-on delay time td(on) - 73 -
Rise time tr - 41 -
ns
Turn-off delay time td(off) VGE = 15V, VCC = 600V, - 269 -
IC = 25A, RG = 23Ω,
Fall time tf - 39 -
Inductive Load,
Turn-on switching energy Eon Tvj = 25°C - 1.44 -
Turn-off switching energy Eoff - 0.55 - mJ
Total switching energy Ets - 1.99 -
Reverse recovery time trr - 100 - ns
Reverse recovery current Irr - 17 - A
IF = 25A, diF/dt = 500A/ μs,
Reverse recovery charge Qrr VR = 600V, Tvj = 25°C - 0.85 - μC
Rate of fall of reverse recovery current
dirr/dt - -376 - A/μs
during tb

Sep. 2015 Revision 1.0 2 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
Switching Characteristic
Turn-on delay time td(on) - 65 -
Rise time tr - 45 -
ns
Turn-off delay time td(off) VGE = 15V, VCC = 600V, - 292 -
IC = 25A, RG = 23Ω,
Fall time tf - 75 -
Inductive Load,
Turn-on switching energy Eon Tvj = 175°C - 2.43 -
Turn-off switching energy Eoff - 1.09 - mJ
Total switching energy Ets - 3.52 -
Reverse recovery time trr - 150 - ns
Reverse recovery current Irr - 25 - A
IF = 25A, diF/dt = 500A/ μs,
Reverse recovery charge Qrr VR = 600V, Tvj = 175°C - 1.85 - nC
Rate of fall of reverse recovery current
dirr/dt - -374 - A/μs
during tb

Sep. 2015 Revision 1.0 3 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
100 100
TJ = 25C 20V TJ = 175C

17V
20V
15V
80 80 17V
13V 15V

Collector Current, IC [A]

Collector Current, IC [A]

13V
11V
60 60

11V

40 40

9V
20 20
9V

VGE = 7V
VGE = 7V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6 7

Collector-Emitter Voltage VCE [V] Collector-Emitter Voltage VCE [V]

Fig.1 Typical Output Characteristic(TJ=25℃) Fig.2 Typical Output Characteristic(T J=175℃)

75 4.0
VCE = 20V VGE = 15V
TJ = 25'C
TJ = 175'C
Collector-Emitter Voltage, VCE [V]

3.5
60 50A
Collector Current, I C [A]

3.0
45

2.5
25A
30

2.0

15 12.5A
1.5

0
5 6 7 8 9 10 11 12 13 1.0
25 50 75 100 125 150 175
Gate-Emitter Voltage VGE [V]
Junction Temperature, TJ [C]
Fig.4 Typical Collector-Emitter Saturation Voltage
Fig.3 Typical Transfer Characteristic
-Junction Temperature

120 4.0

TJ = 25'C
TJ = 175'C
100 3.5
50A
Forward Voltage, VF [V]
Forward Current, IF [A]

80 3.0

20A
60 2.5

40
2.0 12.5A

20
1.5

0
0 1 2 3 4 5 1.0
25 50 75 100 125 150 175
Forward Voltage, VF[V]
Junction Temperature, TJ [C]
Fig.5 Diode Forward Characteristic Fig.6 Diode Forward-Junction Temperature

Sep. 2015 Revision 1.0 4 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
7
Cies

VGE = 0V
Threshold Voltage, VGE(th) [V]

f = 1MHz
6 max.
1000

Capacitance [pF]
typ. Coes
5
Cres
min.
100

3 10
25 50 75 100 125 150 175 0 5 10 15 20 25 30

Junction Temperature, TJ [C] Collector-Emitter Voltage, V CE [V]

Fig.7 Threshold Voltage-Junction Temperature Fig.8 Typical Capacitance

16 120
VCC = 240V VCC = 600V
14 VCC = 960V VGE = 15V
RG = 23ohm
100
TC = 175'C
Gate-Emitter Voltage, VGE, [V]

12
Switching Time [nS]

80
10

td(on)
8
60

6
40 tr
4

2 20

0
0 50 100 150 200 250 0
10 20 30 40 50
Total Gate Charge, QG [nC]
Collector Current, I C [A]

Fig.9 Typical Gate Charge Fig.10 Typical Turn on-Collector Current

1000 6
VCC = 600V VCC = 600V
VGE = 15V VGE = 15V
RG = 23ohm RG = 23ohm
5 TC = 175'C
TC = 175'C
td(off)
Switching Time [nS]

Switching Loss [mJ]

100 3
tf
Eon

Eoff
1

10 0
10 20 30 40 50 10 20 30 40 50

Collector Current, I C [A] Collector Current, IC [A]

Fig.11 Typical Turn off-Collector Current Fig.12 Switching Loss-Collector Current

Sep. 2015 Revision 1.0 5 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
160
1000
VCC = 600V VCC = 600V
VGE = 15V VGE = 15V
140
IC = 25A IC = 25A
TJ = 175'C
td(off)
TJ = 175'C

120
Switching Time [nS]

Switching Time [nS]

100

100
80
td(on) tf

60
tr
40

20 10
10 20 30 40 50 60 10 20 30 40 50 60

Gate Resistance, RG [ohm] Gate Resistance, RG [ohm]

Fig.13 Turn on Characteristic-Gate Resistance Fig.14 Turn off Characteristic-Gate Resistance

6 100

VCC = 600V
VCC = 600V
VGE = 15V
90 VGE = 15V
5 IC = 25A IC = 25A
TJ = 175'C RG = 23ohm
80
Switching Loss [mJ]

Ets
4
td(on)
turn on [ns]

70

3
Eon 60

2
50
tr
1 Eoff 40

0 30
10 20 30 40 50 60 25 50 75 100 125 150 175

Gate Resistance, RG [ohm] Junction Temperature, T J [C]

Fig.15 Switching Loss-Gate Resistance Fig.16 Turn on Characteristic

-Junction Temperature

1000 6
VCC = 600V
VGE = 15V
IC = 25A
5
RG = 23ohm
td(off)
Switching Loss [mJ]

4
turn off [ns]

100 3 Ets

tf
VCC = 600V
Eon
2
VGE = 15V
IC = 25A
RG = 23ohm
1
Eoff

10 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Junction Temperature, T J [C] Junction Temperature, T J [C]

Fig.17 Turn off Characteristic Fig.18 Switching Loss-Junction Temperature

-Junction Temperature

Sep. 2015 Revision 1.0 6 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
6 220
TJ = 25'C
VGE = 15V
TJ = 175'C
IC = 25A 200
IF = 25A
5

Reverse Recovery Time, trr [ns]

RG = 23ohm
TJ = 175'C
180
Switching Loss [mJ]

4
160
Ets

3 140
Eon
120
2

100

1 Eoff
80

0 60
400 450 500 550 600 650 700 750 800 200 400 600 800 1000 1200

Collector-Emitter Voltage, V CE [V] Diode Current Slope, diF/dt [A/us]

Fig.19 Switching Loss-Collector Emitter Voltage Fig.20 Reverse Recovery Time

-Diode current slope

70

TJ = 25'C TJ = 25'C
Reverse Recovery Charge Qrr [uC]

3 TJ = 175'C TJ = 175'C
Reverse Recovery Current I rr [A]

IF = 25A 60 IF = 25A

50

40

30
1

20

0 10
200 400 600 800 1000 1200 400 500 600 700 800 900 1000 1100 1200

Diode Current Slope, diF/dt [A/us] Diode Current Slope, diF/dt [A/us]

Fig.21 Reverse Recovery Charge Fig.22 Reverse Recovery Current

-Diode Current Slope -Diode current slope
0
tp=1us
TJ = 25'C 100
-200 TJ = 175'C
IF = 25A
10us
Rate of fall of Irr, dirr/dt [A/us]

Collector Current, I C [A]

-400

10 50us
-600
100us
200us
-800
500us

1
-1000

-1200 DC

-1400 0.1
400 500 600 700 800 900 1000 1100 1200 1 10 100 1000

Diode Current Slope, diF/dt [A/us] Collector-Emitter Voltage, V CE [V]

Fig.23 Rate of fall of reverse recovery current Fig.24 Forward Bias Safe Operating Area
-Diode Current Slope

Sep. 2015 Revision 1.0 7 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
200 60
VCE=600V
VCE =600V
TC =25'C
TC = 150'C
Short Circuit Collector current, I C(SC) [A]

Short Circuit Withstand Time, tSC [? ]

50

150 40

30

100 20

10

50 0
10 12 14 16 18 10 12 14 16 18 20

Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Fig.25 Typical Short Circuit Collector Current Fig.26 Typical Short Circuit Withstand Time

50 350

300

40
Power Dissipation, Ptot [A]
Collector Current, I C [A]

250

30 200

150
20

100

10 50

0
0 25 50 75 100 125 150 175
25 50 75 100 125 150 175
Case Temperature, TC [C]
Case Temperature, TC [C]
Fig.27 Case Temperature-Collector Current Fig.28 Power Dissipation-Case Temperature

0
10
D=0.9
D=0.9 10
0
0.5
0.5
Thermal Response [Z th-JC ]

] JC
Thermal Response [Z ?

10
-1 0.1

0.1 -1 0.05
10
0.02
0.05
0.01
0.02
-2
10 0.01 -2
10

single pulse Notes :

single pulse Notes :
Duty Factor, D=t1/t2 Duty Factor, D=t1/t2
PEAK TJ = PDM * Z? JC* R? JC(t) + TC PEAK TJ = PDM * Z? JC* R? JC(t) + TC

-3 -3
10 10
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0
10 1x10 1x10 10 10 10 10 10 1x10 1x10 10 10 10 10
Rectangular Pulse width [sec] Rectangular Pulse width [sec]

Fig.29 IGBT Transient Thermal Impedance Fig.30 FRD Transient Thermal Impedance

Sep. 2015 Revision 1.0 8 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT
Physical Dimension

TO-247
Dimensions are in millimeters, unless otherwise specified

ΦP
E A
A2

Q
S

D1
E2
D
L1

b2
b1
L

b E1

e c A1

Dimension Min(mm) Max(mm)

A 4.70 5.31
A1 2.20 2.60
A2 1.50 2.49
b 0.99 1.40
b1 2.59 3.43
b2 1.65 2.39
c 0.38 0.89
D 20.30 21.46
D1 13.08 -
E 15.45 16.26
E1 13.06 14.02
E2 4.32 5.49
e 5.45BSC
L 19.81 20.57
L1 - 4.50
ΦP 3.50 3.70
Q 5.38 6.20
S 6.15BSC

Sep. 2015 Revision 1.0 9 MagnaChip Semiconductor Ltd.

 MBQ25T120FESC 1200V Fieldstop Trench IGBT

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Sep. 2015 Revision 1.0 10 MagnaChip Semiconductor Ltd.