IBM by J. U.

Knickerbocker
G. B. Leung
W. R. Miiler

System/390 S. P. Young
S. A. Sands

air-cooled
R. F. Indyk

alumina thermal
conduction
module

Advances In multilayer ceramic (MLC) Introduction

processing, the use of thin-film metallurgy In 1980 IBM introduced the thermal conduction module
wiring, and enhancements in thermal (TCM) used in the 3080 systems [1, 2] and in 1985 the
dissipation, all described In this paper, TCM used in the 3090™ systems. This paper describes the
represent significant milestones in the Systeni/390™ air-cooled alumina thermal conduction
evolution of microelectronic packaging module (S/3fO™ alumina TCM) which is used in an
technology. The IBM System/390™ air-cooled intermediate-performance processor in the recently
alumina thermal conduction module (8/390'" announced IBM Enterprise System/9000™ (ES/9000™)
alumina TCM) utilizes a 127.5 x l27.5-mm MLC processor family. The S/390 alumina TCM components are
substrate to interconnect as many as 121 VLSI shown schematically in Figure 1. Assembled, the module
devices and 144 substrate-mounted decoupling measures IM mm wide by 146 mm deep by 169 mm high;
capacitors. The substrate provides an an^y of it contains up to 121 logic and array chips with 144
648 pads for solder connections to each device, decoupling capacitors, all mounted using controlled
an array of 16 pads for solder connections to collapse chip connection {C4) technology. The S/390
each capacitor, and an array of 2772 pins for alumina TCM utilizes a new MLC substrate, top-surface
interconnection with the next package level, and thin-film redistribution wiring, and a new air-cooling
contains approximately 400 m of wiring. The technology which allows the package to dissipate 6M W,
reduced thenmal resistance design permits up to and uses 2772 pins to connect with the second-level
6(K) W of air-cooling capacity. This paper package. In this module CMOS and bipolar chip
describes the S/390 alumina TCM fabrication technologies are packaged together on a single TCM for
processes and discusses the advances they the first time. The evolution of the TCM in terms of
represent in processing technology, packaging physical and electrical characteristics is shown in Table 1.
density, and performance. Comparisons to prior In the following sections of this paper, design features
technology are made. and process technology advances are described. The three

^Copyright 1991 by Inremational Bysiness Machines Corporation. Copying in printed form for private use h permitted without payment of royalty provided that (1) each
reproduction is done without alteration and (2) the Jmmml reference and IBM copyright notice are included on the first page. The title and abstract, but no other portions, of
this paper may be copied or distributed royalty free without further permission by computer-based and other information-service systems. Permission to republish any other
330 portion of this paper must be obtained from the Editor.

J. U. KlvllCKERBOCKER ET AL. IBM } . RES. DEVELOP. VOL. 35 NO. 3 MAY 1991

major S/390 alumina TCM fabrication process sectors are
the multilayer ceramic substrate process, the thin-film
process, and the module assembly and test process. The
process flow for these sectors is outlined in Figure 2.
Details of the MLC substrate process steps and module
process steps as applied to a TCM have previously been
described [1-3J. This paper focuses on the advances made
in these processes, as well as the new technologies which
are required in the fabrication of S/390 alumina TCMs. Heat sink

Design features of the Systeni/390 alumina

substrate
Sixty-three metallized alumina layers make up the
127.5 X I27.5-mm S/390 alumina MLC substrate. Figure 3
shows the design advantages of the S/390 alumina Chips
substrate compared to the 3090 TCM substrate. These Seal ring
Piaons
advantages are, specifically, an increase of 2.8 times the Substr«
number of available C4 connections, a 4 times increase in
wiring length, and a 1,5 times Increase in I/O capability.
The thin-fllm metallurgy applied directly to the surface
Base plaie
of the planarized ceramic requires 78 500 vias in the
substrate top surface for interconnection among chips,
interconnection between chips and I/O pins, and
interconnection between chips and pads for the bonding of
engineering change wires. A total of 121 sites are available
for chip joining. Additionally, 144 sites are provided for Assenibly/cuta%vay view of the S/390 alumina TCM.
the attachment of discrete decoupling capacitors to the
substrate top surface. Since the alumina/molybdenum
materials set is identical to that used in previous TCMs, diameter. Additional C4 pads, which are connected to thin-
the electrical characteristics of the S/390 alumina MLC film lines, are deposited on blank ceramic areas rather than
substrate are similar to those reported previously [IJ. directly on top of an MLC via. These pads are nominally
The addition of a single-layer thin-film metallurgy 150 urn in diameter. Openings to all of the C4 pads
pattern provides the interconnection density required for through a polyimide overcoat layer are defined by a laser
the ES/9000 application. Detail of the thin-fllm pattern is ablation process [4] and are nominally 100 iim in diameter.
shown in Figure 4. The pertinent thin-film design features Through this array of 648 openings on 225-fim centers, the
include copper conductors as narrow as 12 jum, as defined VLSI devices are joined to the MLC substrate. Also
by the lift-off process in the chip interconnection (C4) ablated simultaneously with the C4 openings are 258
areas, and as wide as 58 /xm, as defined by a wet-etch openings to allow the bonding of EC wires to appropriate
process in the repair and engineering change (EC) areas. pads. Nominal EC pad dimensions are 230 x 258 /xm, with
MLC vias are capped with pads nominally 180 fim in nominal openings in the overcoat of 250 x 491 (im.

Table 1 Evolution of TCM design features.

3080 3090 Systeml390

TCM TCM air-cooled
TCM

Size (mm) 90X 90 110.5 X 117.5 127.5 X 127.5

Layers 33 36-45 63
Via count 350K 470K 2000K
Wiring (m) 130 180 400
Available C4 connections I6K 24K 80.7K
Chip sites 100-133 132 121
I/O pin connections 1800 ism 2772
Terminal metallurgy Plating Plating Plating/thin film
Cooling capacity (W) 300 (water) 520 (water) 600 (air)
331

mM J. RES. DEVELOP. VOL. 35 NO. 3 MAY 199! J. U. KNICKERBOCKER ET AL.

 powder, organic binder, plasticizer, and solvents, is cast
into 0.20- and 0.28-mm-thick greensheets. The dimensional
Substrate Thin-film Module assembly
process process process stability of the greensheet and the absence of impurities in
Laser delete
it are critical in the fabrication of S/390 alumina MLC
substrates. Stability is critical because of the increased
Sluiry preparation Redundant layer metallization EC wire bonding
number of punched vias and increased metallized area
Paste preparation
which must remain stable for layer-to-layer alignment
Castii^lankii^ Lift-off stencil build Chip joining during layer stacking. Impurities must be minimized to
Personalization—' Lift-off layer metallization Test/rework prevent subsequent voids and other surface defects which
Pattern/via inspection Test and repair Encapsulation adversely affect plating and thin-film features. Enhanced
Stacking/lamination Overcoat
greensheet inspection ensures that the 185-mm-square
I sheets are free of pinholes and contamination defects.
Sintering Final prep
The thick-film paste used to form the three-dimensional
Planarization Pin blazing
I conductive circuits in the substrate is fabricated from
molybdenum powder, glass powders, organic resins, and
Electrical test solvents. These pastes are individually formulated for the
Flange grind various substrate layers and are homogenized and milled to
produce the metallized paste used in the screening process.
The choice of paste solvents and organics is critical in
minimizing their interaction with greensheet materials and
subsequent greensheet movement, especially on layers
S/390 alumina TCM process flow.
where significant screened metallization is required.

• Personalization process
Personalization is the process whereby each of the 63
Multilayer ceramic substrate process greensheet layers used in the substrate receives its unique
circuit pattern and through-sheet via patterns. This is
• Materials processing achieved through punching, screening, and inspection
The S/390 alumina MLC substrate process begins with the operations.
preparation of a ceramic slurry and thick-film metal paste. The via holes in each greensheet are mechanically
The ceramic slurry, comprising alumina powder, glass punched by computer-controlled step-and-repeat

Wire length (m) l/Os Chip interconnects (K)

3000

2000

1000

3090 S/390 3090 S/390 3090 S/390

TCM alumina TCM alumina TCM alumina
TCM TCM TCM

S ^'J(P ,illir]]iJKi M l ( ' siihsli.ilc ik-.]L;]l IIII|1|IHI.MIK-PIIS

332

J. U, KNICKERBOCKER ET AL. IBM J. RES. DEVELOP. VOL. 35 NO. 3 MAY 1991

 o o oo
O P O O
D
Capacitor
pad area

O U U O
o oo

Thin-filra pattern on typical chip site quadrant.

equipment capable of punching up to 121 holes align each of the sheets precisely in subsequent process
simultaneously per stepping cycle as the greensheet is steps through lamination, are also shown.
moved on a precision X-Y table. Figure 5 shows a portion In screening, the thick-film molybdenum metal paste is
of a S/390 alumina MLC substrate top-surface-layer extruded through layer-unique metal masks to form
greensheet which contains 78 500 via holes, each with a continuous metal wiring patterns and to fill interlayer via
nominal diameter of 100 fim. In comparison, a 3090 TCM holes. Nominal screened via diameters are 100 and 140
MLC substrate top-surface-layer greensheet has 36 000 fjim, and nominal screened line widths are 100 jitm. After
vias, each with a nominal diameter of 125 /im. The four screening, the metallized greensheets are dried in forced-
comer location holes, which are used to register and to air-circulation ovens utilizing a time-temperature drying 333

IBM J. RES. DEVELOP. VOL. 35 NO. 3 MAY l » l J. U. KNICKERBOCKER ET AL.

 • Stacking, lamination, and sintering
Each of the 63 inspected personalized greensheets is
cleaned to remove foreign particulates, stacked, cut to the
lamination die cavity size, and laminated at a
predetermined temperature and pressure. The lamination
Detail of S/390 alumina punched top layer. parameters are determined both by the raw-material
characteristics and by the substrate dimensions, and are
chosen to ensure the dimensional and mechanical integrity
of the substrate during the sintering process. Up to 2.0
million vias must be aligned within the substrate during
this process to ensure its electrical integrity. Figure 6
cycle designed to minimize greensheet movement. The shows a cross section of a S/390 alumina TCM MLC chip
punching, screening, and drying operations are tailored site, demonstrating the resultant alignment.
such that existing TCM MLC substrate specifications for In sintering, the polymeric constituents present in the
greensheet movement are met despite the increased greensheets are removed, and the laminate is densified in a
demands imposed by the larger number of through vias high-temperature furnace to form an MLC substrate.
and the larger greensheet metallized area on the S/390 Polymer removal is accomplished through pyrolysis
alumina TCM MLC substrate layers. (decomposition) during heating to 600°C. Any residual
The automated inspection of each greensheet for pattern carbon is removed by the use of wet hydrogen between
and via integrity is critical to the successful construction of 950 and 1150°C. The polymer removal process step is
MLC substrates. This process ensures that each layer especially critical in the S/390 alumina MLC substrate
passes the appropriate specifications and prevents the because it contains three to five times more polymer than
334 assembly of defective layers into a laminate. previous TCM substrates as a result of its increased size.

J. U. KNICKERBOCKER ET AL. IBM J. RES. DEVELOP. VOL. 35 NO. 3 MAY 1991

The polymer removal process is made more difficult
because the diffusion resistance for the removal of the
gaseous products of the pyrolysis process is more than
three times greater in the S/390 alumina TCM substrate
than in previous TCM substrates, again because of
increased size. Adjustments to the sintering
time-temperature profile, adjustments to the ambient
atmosphere, and increased furnace gas exchanges are
necessary to successfully decompose and remove all
organic material in the S/390 alumina MLC substrate
without causing layer delaminations or substrate cracks.
As with other TCM substrates, final densification takes
place in the range of 1250 to I560°C under wet hydrogen.
During this portion of the sintering cycle, the substrate
experiences approximately 17.2% linear shrinkage.

• Precision sizing and planarization

To ensure the accurate placement of the thin-film patterns,
substrates are cut after sintering to tight tolerances in the
X and Y dimensions by referencing to alignment fiducials
sintered into the substrate surface. Lapping and polishing
techniques are used on the top surface to render the
substrate flat and smooth for thin-film application and to
prevent the formation of surface defects which would
perturb the overlying thin-film metal features. After
planarization the substrate top surface has a nominal
flatness of 5 /urn and a surface finish of 300 A average
S/390 alumina MLC substrate ready for thin-film processing
roughness {R^. showing detail of the ground encapsulation flange.

• Finishing
All substrate metallized features are plated with nickel and
gold. Electrical test is utilized to identify opens and shorts.
Some substrate defects are repairable by use of discrete
wiring adds for opens and line deletions for some short metallization and the thin-film-S/390 alumina substrate
circuits. Prior to thin-film deposition, each substrate is composite structure.
ground to provide a seat for its encapsulation required The major steps in the fabrication of the thinfilmson
later in the module assembly operation. Figure 7 shows a the substrate are shown in Figure 2. The redundant layer is
S/390 alumina MLC substrate ready for thin films. Finally, defined on the alumina substrate surface by sub-etching
after thin-film processing, I/O pins are attached to the and serves to enhance the electrical test yield for opens.
bottom surface of the substrate using the standard TCM The lift-off layer is placed on top of the redundant layer
pin attached to the substrate surface with a eutectic and serves as the major conductor pattern. It also provides
gold-tin braze. After the thin-film and braze processes, the device and wire connection metallurgy. Cross-sectional
finished S/390 alumina MLC substrate is ready for the views at various steps in the process are shown in Figure 8
module assembly processes. and are described more fully in the following sections of
this paper. The alumina MLC substrate provides a stable
Thin-film processes base upon which thin films can be fabricated; therefore,
A significant enhancement to the alumina TCM technology thin-film materials and processes may be optimized without
is the utilization of a thin-film metal structure on the top substrate limitations.
surface of the S/390 alumina substrate. The use of thin
films in the substrate design affords simplification of the • Redundant layer metallization
ceramic structure in that fewer ceramic layers are needed The redundant metal layer is formed by a blanket
to achieve the same substrate functionality. Successful metallization followed by photo expose and develop and
stress testing (thermal, electrical, and mechanical) has sub-etch processes. After an initial cleaning and bake, the
demonstrated the reliability of both the thin-film planarized alumina MLC substrate is mapped for feature 335

IBM J. RES. DEVELOP. VOL. 35 NO. 3 MAY 1991 J. U. KNICKERBOCKER ET AL.

 RIE barrier
polyimide

Hiotoresist Z
=z CrICalCr

H
C4pad EC pad

Mo via
'»^.
Nicap 7 Mo via
% i cap Cr/Cu/Cr
Mo via
Ni cap /
Cr/Cu/Cr
MLC substrate MLC substrate MLC substrate I

(a) Redundant layer metal blanket (b) Redundant layer pattern sub-etched (c) Lift-off stencil pattern developed

Cr/Au*n Heavy Au, C4pad, Polyiitude overcoat

Cu C4pad
n E y^
7 Mo via
>x
Nicap
Cr/Cu/Cr
MLC substrate

(d) Stencil lift-off after metallization (e) Laser ablation aiid overcoat

M.ijKi tlun-liliii |1|>1t.l.'^>.rl1y sii.'|iv ^hii»iji'.' llK v.'nii^litii.'tiiin nl ihc tlun-ljlin iiii.'l.illut,<:> rLMiUK'-

locations to provide data for subsequent thin-film feature * Lift-off layer metallization
definition. A blanket metal layer of chrome/copper/chrome Metallization of the lift-oflF layer is accomplished through
is then evaporated or sputtered directly onto the MLC the evaporation of a chrome/copper/nickel/gold blanket and
surface. Photoresist is spun onto this blanket metallurgy, the sequential personalization of EC pads with further gold
exposed using the substrate mapping data, and then baked evaporation. EC pad features require extra gold to ensure
and reversed to give a negative-develop pattern definition wire-bonding integrity, whereas the C4 pads require less
process. The lines and pads required for the redundant gold to promote good solder wettability during chip
layer are left covered by photoresist after development. A joining. At the conclusion of the evaporation process, the
sequential chrome/copper/chrome etch is then used to stencil is removed in a hot, agitated solvent, leaving
produce the redundant layer pattern. After inspection and behind the final metal structure on the substrate. With all
measurement of the metal pattern, the part is ready for of the metal features defined in theirfinalform, they are
fabrication of the lift-off layer. measured for dimensional requirements and sent to test for
electrical assessment.
* Lift-off stencil fabrication
The first step in the lift-oflF stencil fabrication involves the • Electrical test
application of an adhesion promoter to the redundant layer The test measures opens and shorts in the alumina
followed by the application of polyimide which forms the substrate and the thin-film structure, and determines
stencil after photographic development and reactive ion whether the defects involve the substrate or the thin film.
etch (RIE). A RIE barrier film is plasma-deposited on top If the defects are thin-film related, the part is cycled
of the polyimide to protect it during RIE of the through a shorts repair or an opens repair process as
photographically developed pattern. The pattern is formed required, followed by retest to ensure that the desired
with a photoresist spin applied on top of the RIE barrier repairs have taken place. Both repair processes are laser
film and subsequent exposure and development of the based. Shorts repair involves the ablation of the
336 photoresist. extraneous metal causing the short, while opens repair

J. U. KNICKERBOCKER ET AL. IBM J. RES. DEVELOP, VOL. 35 NO. 3 MAY 1991

 Heat sink

Camming
guard

Next level assembly

• .. . - : . ' ^ ? v V ;• • • ••'• .-. . . • ..-

M^s M'liii'Pi 111 tin- S i'Ki .iliiMiin.i ll \1 .is-,iMi!!l\

^ a - ^ m ^ ' f . - } - ^ - ••••• .{•..:;•-•:•• ,.i->i:-^^

deposits a metal bridge over the discontinuous feature tested and is sent to the module assembly operations. At
causing the open. this stage of the assembly process, the VLSI devices and
engineering change (EC) wires are joined to the substrate,
• Overcoat andfinalpreparation and all associated module encapsulation and cooling
The entire thin-fllm structure and alumina substrate top hardware secured. The substrate is now a functional
surface are now covered with a partially cured polyimide module, ready for final electrical test and subsequent
film to provide mechanical protection. Access to the C4 joining to the board assembly. The key sectors in the
and EC pads is provided by laser-ablated openings in this module assembly area are wire bond, chip join, electrical
polyimide overcoat. Ashing and etching of the ablated test, and encapsulation.
areas ensures the integrity of these features for the chip- The module assembly operations for the S/390 alumina
joining and EC-wiring processes during module assembly. TCM are similar to those used for previous TCMs;
Following complete curing of the polyimide coating, an however, modifications to both fixtures and process
inspection ensures compliance with all final product parameters are made as required to accommodate the
requirements. The substrate is then shipped to the larger size and mass of the S/390 alumina TCM substrate.
previously described I/O pin brazing process, which is the Figure 9 shows a cross section of a fully encapsulated
last step prior to module assembly. S/390 alumina TCM.

Module assembly processes • Wire bond

After the substrate is completely metallized and the I/O If a wiring change is required in the module, either
pins are joined to the bottom surface, the substrate is because of electrical design changes or because of wiring 337

IBM J. RES. DEVELOP. VOL. 35 NO. 3 MAY 1991 J. U. KNICKERBOCKER ET AL.

 Table 2 Systein/390 Alumina TCM thermal dissipation internal structures, physical sizes, and C4 counts, all of
factors. which affect the infrared absorptivity and heat dissipation
during the removal process.
Maximum chip power (W) 10
Maximum module power (W) 600
Interna! resistance (°CA¥) 1.7 • Encapsulation
External resistance (°C/W) 0.05 After all components have been joined and EC wiring has
Chip size (mm) 6.5 X 6.5 been completed, the module is encapsulated within an
Chip pitch (mm) 9.9
Module size (mm) 127 X 127 aluminum enclosure, or hat. The hat provides three key
Heat-sink dimensions (mm) 140.0 X 171.3 X 143.8 functions; a thermal path from the device to the system
cooling, mechanical support to the next level assembly,
and a controlled environment for the substrate top surface
and devices.
defects, EC pads are provided to allow surface wires to be The hat is attached to the module by bolting it to a base
routed from one chip site to another. A line deletion is plate with the seal area of the substrate contained between
performed by laser ablation of the appropriate thin-film the base plate and the hat. A lead-coated Inconel C-ring
wiring line, and is followed by the ultiasonic bonding provides a compliant, sealing interface between the
of a gold-plated cadmium-copper alloy wire between substrate and the hat and maintains the hermeticity of the
the appropriate EC pads which completes the wiring assembly. The dimensions of the seal area, the sea! ring,
change. and the encapsulation hardware are engineered to prevent
the ring from slipping during thermal expansion or module
• Chip!capacitor join connector actuation, which can exert forces as high as 700
The S/390 alumina TCM is the first TCM that contains pounds. Hermeticity must be preserved throughout all
both bipolar and CMOS devices. In addition, the module module assembly process steps and field thermal cycling
contains decoupling capacitors to provide improved conditions to prevent corrosion and electrical breakdown
electrical performance. The three components use standard of the module.
controlled collapse chip connection (C4) technology [5, 6] After assembly of the hat to the substrate, the sealed
incorporating 97Pb/3Sn solder to provide the S/390 alumina TCM module is backfilled with a poly-alpha
interconnection to the substrate. The use of a common olefin oil to reduce internal thermal resistance. The oil
solder allows for joining of all the components in a single replaces the helium gas which is used in other TCM
temperature cycle. modules. The thermal benefits of this oil and the changes
The change in the substrate terminal metals from a in the encapsulation hardware are described in the next
Ni-Au-plated structure to the thin-film structure described section of the paper.
previously requires a reducing gas atmosphere in the chip- Assembly of the aluminum heat sink to the hat
joining furnace to prevent degradation of the thin-film completes the module assembly process. The heat sink is
structure and to ensure good C4 wettability and wire uniformly bolted to the hat with equal force at 12
bondability. appropriately spaced locations. The completed S/390
The large mass of the S/3M alumina substrate stretches alumina TCM is now delivered to the system assembly
the capability of existing chip-joining furnaces to keep the process sectors.
time-temperature proile uniformly within specifications
across the entire substrate. These specifications ensure the Thermal design
reliability of the C4 joints. Modifications to existing With the increase in circuit density on the VLSI devices,
furnaces and fixtures manage the heat flux into and out of the power requirements of the S/390 alumina TCM exceed
all sections of the substrate during the chip-join process, those of any previous air-cooled TCM to date by more
allowing all C4 reliability objectives to be met. The module than 100%. Increases in the chip size and chip pitch are
is then electrically tested to verify the functionality of all factors in the cooling, but the improvements in materials
joined devices. and dimensions are the major contributors to the
If after electrical test a device requires replacement, a improvement in thermal performance (Table 2). The
focused infrared process can remove an individual cooling demands are satisfied by the optimization of the
defective device from the substrate and remove the existing piston technology, requiring the least change in
residual solder from the now-vacant chip site [7]. The the normal manufacturing process. The improvements in
device can subsequently be replaced with another by the technology provide the system user with the installation
standard chip-join process. Removal process parameters flexibility and cost advantages afforded by air cooling,
are tailored individually for each of the devices used in the along with the computing capability previously available
338 S/390 alumina TCM because they each have very different only in a water-cooled system.

J, U. KNICKERBOCKER ET AL. IBM J. RES. DEVELOP. VOL. 35 NO. 3 MAY 1991

 The objective in designing the module thermal system is
to Iceep the chip junction temperature T. below a
predefined temperature limit based on the device electrical
performance and reliability. A simple equation to
determine the junction temperature of an individual chip
for a given chip power and module power is as follows:

Ti = T^, + (^hip^J + KJ^J + T^r + r.^ ,

where T^^^ is the local air temperature, P^^^^^ is the power of
the chip, i?j^, is the internal thermal resistance of the
module, P^^ is the total module power, R^^^ is the external
thermal resistance, T^.^ is the rise in temperature through
the heat sink, and T^_^. is the diflference in temperature from ooooooooooooooo ooooooooooooooo
chip-piston > Rchip-piston
the front to the back of the device.
The internal thermal resistance is the sum of the
individual thermal resistances from the back of the chip to
the top of the hat, as shown in Table 3. To cool the S/390 Figure 10
alumina TCM, major improvements are required in each of Effect of increasing tlie piston crown radius.
the internal thermal resistances as well as in the external
resistance.
The dimensions of the piston were changed to minimize
the thermal path from the chip to the top of the hat. The Table 3 System/390 Alumina TCM internal thermal
tolerances between the piston and the piston wall are resistance.
minimized to reduce the interface thermal resistance.
Because the gaps are designed such that the motion of the Internal resistance C*C/W}
piston in the hole is not impeded, contact between the •?ch'P
0.1
piston and chip is always maintained. Piston pressure is chiivpiston 0.17
0.4
applied to the chip via a spring behind the piston. The 0.63
piston-hal
effect of the spring force must be considered, because ^hal 0.4
there are chips with different C4 counts on the same inieiface 0.003
module. The spring design chosen does not induce
deformation damage to the C4s on either of the chip types,
and at the same time provides sufBcient contact between hard, tightly adherent aluminum oxide layer that is formed
the piston and the chip to minimize thermal resistance. at the surface of the hat is an excellent electrical isolator.
Changing the piston material from aluminum to copper The piston crown radius is increased from 200 mm to
takes advantage of the excellent thermal conductivity of 1000 mm to provide more surface contact with the chip
copper, thus reducing the overall internal thermal and thereby decrease the chip-to-piston interface resistance
resistance. The material change forces a change in the way (Figure 10). Increasing the crown radius also raises the
in which the chips are electrically isolated. Since there is a concern of sensitivity to contamination. Particles greater
continuous metal contact among the chips through the hat, than a few microns in size could act as spacers and
there is a requirement to prevent electrical contact among prevent the piston from making good contact with the
devices of dissimilar silicon substrate potential. On chip. To eliminate this concern, the back surface of the
previous TCM technologies, this was prevented by device is cleaned of contamination before the assembly
electrically isolating the device through anodization of the process, which is performed in a class 100 environment.
aluminum piston. As a consequence of changing the piston All surfaces of the piston must be kept free of burrs and
material to copper, the aluminum hat must now be defects. The substrate surface planarization operation
anodized. Piston holes are not easily anodized because of provides a flat surface to join the chip, keeping the amount
the difficulty of replenishing the anodization solution of chip tilt after joining well within the limits required for
during processing; however, a new process is used which good thermal contact between the chip and the piston.
maintains anodization thicknesses to within a few fim in The replacement of the helium atmosphere inside the hat
the holes and across the surface of the hat. The with synthetic oil provides a 20% improvement in thermal
anodization requires that the surface finish of the hat be conductivity. A poly-alpha olefin oil is used as the cooling
controlled tightly so that there are no burrs or scratches oil because of its thermal conductivity and chemical
which would adversely affect the anodization layer. The stability. A slot is machined in the side of the piston to 339

IBM J, R E S . DEVELOP. VOL- 3S N O . 3 MAY 1991 J. U. KNICKERBOCKER ET AL.

 relieve pressure as the piston moves in the hole during and sintering processes to maintain the dimensional and
normal machine cycling. The amount of oil added to the electrical integrity of the substrate.
hat is controlled, to allow for thermal expansion during • The use of thin-film metallurgy on the top surface
temperature cycling. provides the interconnection density required for the
Another area where the two chip technologies, bipolar System/390 application and simplifies the underlying
and CMOS, are considered is the temperature substrate structure. Integral to the use of thin-film wiring
requirements of each device. Since CMOS technology is the lapping and polishing of the substrate to provide a
devices are most efficient at temperatures lower than those flat, smooth surface for thin-film processing.
typically experienced in TCM modules, these devices are • Encapsulation hardware improvements, an oil cooling
placed on the leading edge of the substrate where the air medium, and chip layout design significantly improve the
tempetmture through the heat sink would be the lowest. thermal dissipation capability of this air-cooled TCM.
The highest-power bipolar devices are spread out over the
module to take advantage of the maximum spreading of Acknowledgment
heat and the most efficient use of the cooling technology. The authors wish to express their appreciation to all those
With the optimized piston design, chip temperatures for individuals in the East Fishkill Packaging Laboratory and
a given chip power layout can be estimated by an ASTAP in the East Fishkill, Sindelfingen, Poughkeepsie, and
finite-difference model with considerable accuracy [8]. The Montpellier manufacturing lines whose work contributed to
model is verified by running a module at various power the development and manufacture of the air-cooled
levels and measuring the chip temperatures. Close alumina TCM utilized in the IBM System/390 processor.
agreement of the actual data with the model prediction
confirms the validity of the model. The module designer System/390, S/390, 3090, Enterprise System/9000, and ES/9000
can then use the model to confirm that chip temperatures are trademarks of International Business Machines
are still within acceptable limits without having to power Corporation,
up a module and generate chip temperature maps for each
References
different design.
1. A. J. Blodgett and D. R. Barbour, "Thermal Conduction
Of equal importance to the hat in cooling the S/390 Module: A High-Performance Ceramic Package," IBM J.
alumina TCM is the air-cooled heat sink. In calculations of Res. Develop. 26, 30-36 (1982).
2. A. J. Blodgett, "Microelectronic Packaging," Sci. Amer.
the module thermal performance, the heat-sink resistance 249, 86-96 (1983).
and the resistance at the hat/heat-sink interface constitute 3. W. G. Burger and C. W. Weigel, "Multi-Layer Ceramics
the external thermal resistance. Three important factors Manufacturing," IBM J. Res. Develop. 27, 11-19 (1983).
4. J. H. Brannon, J. R. Lankard, A. L Baise, F. Bums, and
are considered in the heat-sink design: thermal J. Kaufman, "Excimer Laser Etching of Polyimide,"
performance, cost, and acoustics. The design for the S/390 J. Appl. Phys. 58, 2036-2043 (1985).
alumina TCM heat sink is a high-density straight-fin design 5. L. F. Miller, "Controlled Collapse Reflow Chip Joining,"
with airflowingin the transverse direction. The fin density IBM J. Res. Develop. 13, 239-250 (1969).
6. P. A. Totta and R. P. Sopher, "SLT Device Metallurgy and
and gap spacing are selected to provide a small pressure Its Monolithic Extension," IBM J. Res. Develop. 13,
drop across the heat sink. The small drop in pressure 226-238(1969).
permits the use of lower blower speeds, allowing low 7. K. Puttlitz, K. Schink, H. Wenskus, and R. Meyen,
"Individual Chip Joining Machine," U.S. Patent No.
system noise levels. The thermal resistance between the 4,160,893, July 10, 1979.
hat and the heat sink is dependent on the amount of 8. S. Oktay and H. C. Kammerer, "A Conduction-Cooled
contact between the two mating surfaces. The contact area Module for High-Performance LSI Devices," IBM J. Res.
Develop. 26, 55-66 (1982).
is maximized byfinishingthese surfaces extremely flat and
fine, typically 0.013 mm and N/5, respectively.
Received October 17, 1990

Conclusion
The IBM System/3M alumina thermal conduction module
is the result of extending existing alumina substrate
manufacturing processes and combining them with the use
of thin-film metal wiring and the greatly improved thermal
dissipation capacity of the air-cooled TCM hardware.
The more significant elements of the module fabrication
discussed in this paper include the following:

Larger mass and metallized area on the substrate drive

340 improvements in the punching, screening, lamination.

J. V. KNICKERBOCKER ET AL. IBM J. RES. DEVELOP. VOL. 33 NO. 3 MAY 1991

John U. Knickerbocker IBM General Technology
Division, East Fishkill facility, Hopewell Junction, New York
12533. Dr. Knickerbocker is a Senior Engineering Manager
responsible for Advanced Substrate Development in the
Packaging Development Laboratory at the IBM East Fishkill
facility. He received his B.S. and M.S. degrees in ceramic
engineering from Alfred University and his Ph.D. in ceramic
engineering from the University of Illinois in 1983. Upon
joining IBM in 1983, Dr. Knickerbocker worked in the
Advanced Packaging Technology group in the area of substrate
sintering development. He is a member of the American
Ceramic Society.

George B. Leung IBM General Technology Division, East

Fishkill facility, Hopewell Junction, New York 12533. Mr.
Leung is a Senior Engineering Manager in Advanced Process
Technology, a thin-film packaging group at the IBM East
Fishkill facility. Mr. Leung holds a B.S. in mechanical
engineering and an M.S. in industrial administration. His
previous work includes the development of multilayer ceramic
packaging, multilevel thin-film packaging, thermal electron-
beam personalization, gas panel displays, and vacuum process
and equipment.

William R. Miller IBM General Technology Division, East

Fishkill facility, Hopewell Junction, New York 12533. Mr.
Miller is a Development Engineer in the Packaging Laboratory
at the IBM East Fishkill facility. He received his B.S. (1979)
and M.S. (1984) in materials science from Stevens Institute of
Technology. Since joining IBM in 1979, Mr. Miller has worked
in the packaging interconnections development area and has
managed the Thermal Design and Analysis and the
Interconnection Development departments. He is currently
manager of the Packaging Product Development Department.

Steven P. Young IBM General Technology Division, East

Fishkill facility, Hopewell Junction, New York 12533. Mr.
Young is a Senior Engineering Manager in the Advanced
Module Development and Technology group at the IBM East
Fishkill facility. He received his B.S. (1974) and M.S. (1976)
from Lehigh University. After joining IBM in 1976, he was
involved with various MLC substrate technologies in both
engineering and managerial capacities. Since 1986, Mr. Young
has managed various MLC module technologies including
module cooling and encapsulation and device interconnection.
He is a member of the American Society for Metals
International and the International Society for Hybrid
Microelectronics.

Scott A. Sands IBM General Technology Division, East

Fishkill facility, Hopewell Junction, New York 12533. Mr.
Sands is a Senior Engineer in the Thin Film Metallization
group at the IBM East Fishkill facility. He holds a B.A. (1962)
in physics from the University of Minnesota and an M.S.
(1981) in industrial administration from Union College. Mr.
Sands joined IBM in 1967 and has engineering and
management experience in both the p a c k i n g and
semiconductor organizations at East Fishkill.

Richard F. Indyk IBM General Technology Division, East

Fishkill facility, Hopewell Junction, New York 12533. Mr.
Indyk is a Staif Engineer in the Packaging Laboratory at the
East Fishkill facility. He received his B.S. (1979) and M.S.
(1981) degrees in ceramic engineering from Rutgers University.
Mr. Indyk has held various engineering positions in both
substrate and module process development since joining IBM
in 1981. Specific areas of process involvement include
substrate raw materials, chip joining and chip rework, and,
currently, substrate planarization.
341

IBM J. RES. DEVELOP. VOL. 35 NO. 3 MAY 1991 !. V. KNICKERBOCKER ET AL.