July 1996

NDT455N
N-Channel Enhancement Mode Field Effect Transistor

General Description Features

These N-Channel logic level enhancement mode power field 11.5 A, 30 V. RDS(ON) = 0.015 Ω @ VGS = 10 V
effect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.02 Ω @ VGS = 4.5 V.
cell density, DMOS technology. This very high density process
is especially tailored to minimize on-state resistance, provide High density cell design for extremely low RDS(ON).
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These devices High power and current handling capability in a widely used
surface mount package.
are particularly suited for low voltage applications such as DC
motor control and DC/DC conversion where fast switching, low
in-line power loss, and resistance to transients are needed.

________________________________________________________________________________

D D

G D S G S

Absolute Maximum Ratings T A = 25°C unless otherwise noted

Symbol Parameter NDT455N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage 20 V
ID Drain Current - Continuous (Note 1a) ± 11.5 A
- Pulsed ± 40
PD Maximum Power Dissipation (Note 1a) 3 W
(Note 1b) 1.3
(Note 1c) 1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W

© 1997 Fairchild Semiconductor Corporation NDT455N Rev.F

Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
TJ = 55°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 3 V
TJ = 125°C 0.7 0.9 2.2
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 11.5 A 0.013 0.015 Ω
TJ = 125°C 0.019 0.03
VGS = 4.5 V, ID = 10 A 0.018 0.02
ID(on) On-State Drain Current VGS = 10 V , VDS = 5 V 30 A
VGS = 4.5 V, VDS = 5 V 15
gFS Forward Transconductance VGS = 10 V, ID = 11.5 A 26 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15, VGS = 0 V, 1220 pF
f = 1.0 MHz
Coss Output Capacitance 715 pF
Crss Reverse Transfer Capacitance 280 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time VDD = 15 V, ID = 1 A, 11 20 ns
tr Turn - On Rise Time VGEN = 10 V, RGEN = 6 Ω 16 30 ns
tD(off) Turn - Off Delay Time 48 80 ns
tf Turn - Off Fall Time 40 70 ns
Qg Total Gate Charge VDS = 10 V, 43 61 nC
ID = 11.5 A, VGS = 10 V
Qgs Gate-Source Charge 4 nC
Qgd Gate-Drain Charge 11 nC

NDT455N Rev.F
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 2.5 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.845 1.2 V
trr Reverse Recovery Time VGS = 0 V, IF = 2.5 A dIF/dt = 100 A/µs 140 ns
Notes:
T J −T A T J −T A
1. PD (t) = R θJA(t)
= R θJC +R θCA (t)
= I 2D(t) × R DS(ON)@T J RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the

solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical

RθJA is found to be:

a. 42oC/W with 1 in2 of 2 oz copper mounting pad.

b. 95oC/W with 0.066 in2 of 2 oz copper mounting pad.

c. 110oC/W with 0.0123 in2 of 2 oz copper mounting pad.

1a 1b 1c

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT455N Rev.F
Typical Electrical Characteristics

40 2.5
VGS =10V 4.5
, DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
6.0 4.0
32 5.0

R DS(on) , NORMALIZED
2 VGS = 3.5V
3.5
24
4.0
1.5 4.5
5.0
16
3.0 6.0
10
1
8
D
I

0 0.5
0 0.5 1 1.5 2 2.5 3 0 8 16 24 32 40
VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

1.5 2.5
I D = 11.5A
VGS = 10V
DRAIN-SOURCE ON-RESISTANCE

V GS = 10V
DRAIN-SOURCE ON-RESISTANCE

2
1.25
R DS(on) , NORMALIZED
R DS(ON), NORMALIZED

TJ = 125°C
1.5
1 25°C
1

0.75 -55°C
0.5

0.5 0
-50 -25 0 25 50 75 100 125 150 0 8 16 24 32 40
T , JUNCTION TEMPERATURE (°C) I , DRAIN CURRENT (A)
J D

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Drain

Temperature. Current and Temperature.

40 1.4
GATE-SOURCE THRESHOLD VOLTAGE

V DS = 10V T = -55°C
J VDS = VGS
25°C I D = 250µA
1.2
VGS(th) , NORMALIZED

30 125°C
I D , DRAIN CURRENT (A)

20
0.8

10
0.6

0.4
0 -50 -25 0 25 50 75 100 125 150
0.8 1.6 2.4 3.2 4
V , GATE TO SOURCE VOLTAGE (V) T , JUNCTION TEMPERATURE (°C)
GS J

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with

Temperature.

NDT455N Rev.F
Typical Electrical Characteristics

40
1.1
I D = 250µA 10 V GS = 0V
DRAIN-SOURCE BREAKDOWN VOLTAGE

1.08

I S , REVERSE DRAIN CURRENT (A)

1.06 1
, NORMALIZED

1.04 T J = 125°C
0.1
1.02 25°C

1 0.01 -55°C
DSS
BV

0.98
0.001
0.96

0.94 0.0001
-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4
T , JUNCTION TEMPERATURE (°C) V SD , BODY DIODE FORWARD VOLTAGE (V)
J

Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage Variation
Temperature. with Current and Temperature.

4000 10
I D = 11.5A VDS = 5.V
V GS , GATE-SOURCE VOLTAGE (V)

10V
2000 8
C iss 15V
CAPACITANCE (pF)

1000 6
800
C oss
500
4
300
f = 1 MHz C rss 2
200
V GS = 0V

100 0
0.1 0.2 0.5 1 2 5 10 20 30 0 10 20 30 40 50
V , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)
DS

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

t on t off
V DD t d(on) t d(off)
tr tf
90% 90%
V IN RL

D V OUT
VOUT
VGS 10% 10%
R GEN DUT INVERTED
G
90%

S V IN 50% 50%

10%

PULSE WIDTH

Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.

NDT455N Rev.F
Typical Thermal Characteristics

40 3.5
g FS, TRANSCONDUCTANCE (SIEMENS)

V DS =10V TJ = -55°C

STEADY-STATE POWER DISSIPATION (W)

1a
3

30
25°C
125°C 2.5

20 2

1.5
1b
10
1c
1 4.5"x5" FR-4 Board
o
TA = 2 5 C
Still Air
0 0.5
0 6 12 18 24 30 0 0.2 0.4 0.6 0.8 1
I , DRAIN CURRENT (A) 2oz COPPER MOUNTING PAD AREA (in 2 )
D

Figure 13. Transconductance Variation with Drain Figure 14. SOT-223 Maximum Steady- State
Current and Temperature. Power Dissipation versus Copper
Mounting Pad Area.

14 60
I D , STEADY-STATE DRAIN CURRENT (A)

IT
30 LIM 100
(O N) us
R DS
12 10 1m
I D , DRAIN CURRENT (A)

1a s
5
10m
s
10 100
1 ms
1s
10s
8 1b
VGS = 10V DC
1c 0.1 SINGLE PULSE
4.5"x5" FR-4 Board
o
6 TA = 25 C 0.05 RθJA =See Note1c
Still Air TA = 25°C
VGS = 10V
4 0.01
0 0.2 0.4 0.6 0.8 1 0.1 0.5 1 2 5 10 30 50
2oz COPPER MOUNTING PAD AREA (in 2 ) VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 15. Maximum Steady-State Figure 16. Maximum Safe Operating Area.
DrainCurrent versus Copper Mounting
Pad Area.

0.5 D = 0.5
TRANSIENT THERMAL RESISTANCE

0.2 0.2
R JA (t) = r(t) * R JA
r(t), NORMALIZED EFFECTIVE

θ θ
0.1 0.1 R JA = See Note 1 c
θ
0.05 0.05

P(pk)
0.02 0.02

0.01 t1
0.01 t2
0.005 TJ - TA = P * R (t)
Single Pulse θJA
Duty Cycle, D = t 1 / t 2
0.002

0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t 1 , TIME (sec)

Figure 17. Typical Transient Thermal Impedance Curve.

Remark: Thermal characterization performed under the conditions of Note 1c. Should better thermal design employs, RθJA will be
lower and reach thermal equivalent sooner.

NDT455N Rev.F
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™ TinyLogic™

CoolFET™ MICROWIRE™ UHC™
CROSSVOLT™ POP™ VCX™
E2CMOSTM PowerTrench™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6
HiSeC™ SuperSOT™-8
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.