WEITRON BAS16 / BAV70

BAW56 / BAV99

Surface Mount Switching Diode

SWITCHING DIODE
200-215m AMPERRES
Features: 70-75 VOLTS
*Low Current Leakage
*Low Forward Voltage
*Reverse Recover Time Trr 6ns
*Small Outline Surface Mount SOT-23 Package 3
*Device per Reel Mount : 3k/Reel
1
2

SOT-23

SOT-23 Outline Dimensions Unit:mm

A Dim Min Max

A 0.35 0.51
B 1.19 1.40
TOP VIEW B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
E
G D G 1.70 2.10
H H 2.70 3.10
J 0.01 0.13
K
K 0.89 1.10
L 0.30 0.61
L
J M M 0.076 0.25

WEITRON
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This datasheet has been downloaded from http://www.digchip.com at this page
 BAS16 / BAV70
BAW56 / BAV99
Maximum Ratings (EACH DIODE)
Characteristic Symbol BAS16 BAV70 BAW56 BAV99 Unit
Reverse Voltage VR 75 70 Volts
Forward Current IF 200 215 mAdc
Peak Forward Surge Current IFM 500 mAdc

Non-Repetitive Peak @ t=1.0us 2.0

IFSM Adc
Forward Surge Current @ t=1.0s 1.0

Thermal Characteristics
Characteristic Symbol Max Unit
Total Device Dissipation FR-5
PD
Board *1, TA=25 C 225 mW
Derate Above 25 C 1.8 mW/ C
Thermal Resistance Junction to Ambient R qJA 556 C/W
Total Device Dissipation
Alumina Substrate*2 TA=25 C PD 300 mW
Derate Above 25 C 2.4 mW/ C
Thermal Resistance Junction to Ambient R qJA 417 C/W
Junction and Storage Temperature TJ, Tstg -55 to + 150 C
*1 ER-5=1.0x0.75x0.062 in
*2 Alumina=0.4x0.3x0.024 in 99.5% Alumina

Electrical Characteristics (TA=25 C Unless Otherwise Note) (Each Diode)

Characteristic Symbol Min Max Unit

Off Characteristics
Reverse Breakdown Voltage BAS16 75
VBR Vdc
(IBR=100 µAdc ) BAV70/BAW56/BAV99 70
Reverse Voltage Leakage Current
VR=75V BAS16 1.0
VR=70V BAV70/BAW56/BAV99 2.5
VR=25V, TJ=150 C BAS16/BAW56/BAV99 IR 30.0 µAdc
VR=25V, TJ=150 C BAV70 60.0

VR=75V, TJ=150 C BAS16 50.0

VR=70V, TJ=150 C BAW56/BAV99 50.0
VR=70V, TJ=150 C BAV70 100.0

WEITRON
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 BAS16 / BAV70
BAW56 / BAV99

Off Characteristic
Characteristic Symbol Min Max Unit
Diode Capacition BAS16/BAW56 2.0
CD PF
(VR=0, f=1.0MHz) BAV70/BAV99 1.5
Forward Voltage
(IF=1.0 mAdc) 715
(IF=10 mAdc) VF 855 mVdc
(IF=50 mAdc) 1000
(IF=150 mAdc) 1250
Reverse Recovery Time (Figure 1.)
IF=IR=10 mAdc, VR=5.0Vdc trr 6.0 nS
IR(REC)=1.0 mAdc, RL=100

Device Marking
Item Marking Eqivalent Circuit diagram
3 1
BAS16 A6
1
3
BAV70 A4 2

1
BAW56 A1 3
2
1
BAV99 A7 3
2

Figure 1. Recovery Time Equivalent Test Circuit

820

+10V 2.0K tr tp t IF
IF 0.1µF
10% trr t
100 µH
0.1µF

D.U.T. 90%
50 OUTPUT 50 INPUT
PULSE SAMPLING IR IR(REC)=1.0mA
VR
GENERATOR OSCILLOSCOPE
INPUT SIGNAL OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA

Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA

2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp » trr

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 BAS16 / BAV70
BAW56 / BAV99

FIGURE 2 .FORWARD VOLTAGE FIGURE 3. LEAKAGE CURRENT

100 10
TA=150 C

IA. REVERSE CURRENT (µA)

TA=125 C
IF, FORWARD CURRENT (mA)

TA=85 C
1.0
TA=-40 C
10
TA=85 C
0.1

TA=25 C
TA=55 C

1.0 0.01

TA=25 C
0.001
0 10 20 30 40 50
0.1
VR. REVERSE VOLTAGE (VOLTS)
0.2 0.4 0.6 0.8 1.0 1.2
VF, FORWARD VOLTAGE (VOLTS)

FIGURE 4. CAPACITANCE(BAS16) FIGURE 5. CAPACITANCE (BAV70)

0.68 1.00
CD. DIODE CAPACITANCE (PF)
CD. DIODE CAPACITANCE (PF)

0.64 0.90

0.60 0.80

0.56 0.70

0.52 0.60

0 2 4 6 8 0 2 4 6 8

VR. REVERSE VOLTAGE (VOLTS) VR. REVERSW VOLTAGE (VOLTS)

FIGURE 6. CAPACITANCE(BAW56) FIGUTRE 7. CAPACITANCE (BAV99)

1.75 0.68
CD. DIODE CAPACITANCE (PF)

CD. DIODE CAPACITANCE (PF)

1.50 0.64

1.25 0.60

1.00 0.56

0.75 0.52

0 2 4 6 8 0 2 4 6 8
VR. REVERSE VOLTAGE (VOLTS) VR. REVERSE VOLTAGE (VOLTS)

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