LANTIN BSEE 2C Electronics Lab2
LANTIN BSEE 2C Electronics Lab2
LANTIN BSEE 2C Electronics Lab2
ELECTRONICS LAB 2
AIM:
a) To observe and draw the static characteristics of a Zener diode
b) To find the voltage regulation of a given Zener diode
APPARATUS:
THEORY:
A Zener diode is heavily doped p-n junction diode, specially made to operate in the break
down region. A p-n junction diode normally does not conduct when reverse biased. But
if the reverse bias is increased, at a particular voltage it starts conducting heavily. This
voltage is called Break down Voltage. High current through the diode can permanently
damage the device.
To avoid high current, we connect a resistor in series with Zener diode. Once the diode
starts conducting it maintains almost constant voltage across the terminals whatever
may be the current through it, i.e., it has very low dynamic resistance. It is used in
voltage regulators.
CIRCUIT DIAGRAM
A. STATIC CHARACTERISTICS:
Model Graph:
RESULTS AND OBSERVATIONS:
A) FORWARD BIAS
CHARACTERISTICS
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 5 10 15 20 25 30 35
FORWARD CURRENT (mA)
B) REVERSE BIAS
REVERSE BIAS
7
0
-0.5 0 0.5 1 1.5 2 2.5 3
REVERSE CURRENT (mV)
PROCEDURE:
A) Static characteristics:
1. Connect the Circuit as per the Circuit Diagram on the bread board.
2. By changing the load Resistance, kept constant I/P Voltage at 5V, 10 V, 15 V as
per table given below. Take the readings of O/P Voltmeter (Vo=Vz).
3. Now by changing the I/P Voltage, kept constant load Resistance at 1K, 2K, 3Kas
per table given below. Take the readings of O/P Voltmeter (Vo=Vz).
C) LOAD REGULATION
D) LINE REGULATION
VIVA QUESTIONS:
The negative temperature coefficient and the positive temperature coefficient are
two separate temperature coefficients for the Zener diode. The temperature
coefficient determines how much the Zener diode changes as the temperature
or degree changes. The negative temperature coefficient refers to a negative
temperature coefficient when less than 5 voltages are applied, which means
Zener voltage lowers as temperature rises. The diode has a positive temperature
coefficient over 5 volts, which means Zener voltage rises as temperature rises.
When the temperature rises, the breakdown voltage falls in the Zener
breakdown, and vice versa in the avalanche breakdown.
The doping concentration of the n and p sides of the diode is said to be inversely
proportional to the depletion region in the diode. So, if the impurity
concentration rises, the depletion region's width should decrease or narrow, and
if the impurity concentration falls, the depletion region's width should increase.
The process by which Zener and avalanche breakdown occur is the main
difference between them. Zener breakdown occurs as a result of the intense
electric field. The avalanche breakdown is caused by unbound electrons
colliding with atoms. Both breakdowns could occur simultaneously.
When the diode is reverse biased, the electrons' kinetic energy increases, and
they travel quickly. When high-velocity electrons collide with other atoms, free
electrons are created. A huge amount of reverse saturation current is generated
as a result of the freed electrons. This is known as a Zener breakdown. The
avalanche breakdown happens when a significant reverse voltage is applied
across the diode. When the applied reverse voltage is raised, the electric field
across the junction develops. The electrons at the junction are pushed out of their
covalent bonds by this electric field. These free electrons start moving quickly
across the junction, colliding with the other atoms and producing more free
electrons. As a result, net current rises rapidly. The Zener breakdown occurs
when having a breakdown voltage of 5 to 8 volts while the avalanche breakdown
occurs when the Zener breakdown voltage is higher than 8 volts.
The voltage at which the breakdown process begins is known as the breakdown
voltage. Before current may flow, the open gap voltage rises until it forms an
ionization channel across the dielectric. Once the current starts to flow, the
voltage drops and stabilizes at the working gap level. The so-called doping
process can be used to control the breakdown voltage of a particular diode. In
semiconductor manufacture, doping is the intentional introduction of
impurities into an intrinsic semiconductor with the goal of modifying its
electrical, optical, and structural characteristics. A doped substance is known
as an extrinsic semiconductor. This means that during the manufacturing
process, the breakdown voltage can be modified by modifying the doping levels
in the diode's junction.
10. By what type of charge carriers the current flows in Zener and avalanche
breakdown diodes?
Zener breakdown occurs when the reverse bias voltage provides an electric field
strong enough to remove bound electrons from atoms in the depletion area.
When an electron is liberated from its link, it transforms into a free charge
carrier, leaving a hole in the atom via which it can be retrieved. When the
applied voltage is high enough under reverse bias during an avalanche
breakdown, the free electron may travel swiftly enough to knock further
electrons free, resulting in freer electron-hole pairs (i.e., more charge carriers)
and therefore boosting the current. As a result, charge carriers produced by
collisions account for the majority of the current flow in a Zener diode.
We can use a Zener diode for a number of different purposes. The Zener diode,
which is used as a voltage regulator to supply a consistent voltage from the
source to the load, is one of them. It can also be used to protect meters. In
multimeters, Zener diodes are widely employed to safeguard them from
unexpected meter reading movements and probable overload. In addition, the
Zener diode can be employed as a wave shaper, converting sine waves to square
waves. It can also be utilized in voltage shifting and clipping circuits. There are
still many applications for the Zener diode, but the most common one is as a
voltage regulator.
13. Explain how Zener diode as voltage regulator
A series resistor is connected to the circuit to limit the current into the diode. It
is connected to the positive D.C. terminal. It's built in such a way that it can also
work in a breakdown circumstance. We don't use a normal junction diode since
reverse biasing over its breakdown voltage can ruin the diode's low power rating.
When the minimum input voltage and maximum load current are employed, the
Zener diode current should always be minimal. It's simple to choose a Zener diode
with a voltage near to the load voltage because the input voltage and required
output voltage are both known. Zener Diodes and other shunt voltage regulators
are often employed to regulate voltage across small loads. Zener diodes feature a
sharp reverse breakdown voltage and a steady breakdown value across a large
current range. As a result, we'll wire the Zener diode in parallel with the load,
causing the applied voltage to reverse bias it. The voltage across the load will be
constant if the reverse bias voltage across the Zener diode exceeds the knee
voltage.