IRAUDAMP11

120W x 3 Channel Class D Audio Power Amplifier

Using the IRS2053M and IRF6665
By

Jun Honda, Liwei Zheng

CAUTION:

International Rectifier suggests the following guidelines for safe operation and handling of
IRAUDAMP11 Demo board;

 Always wear safety glasses whenever operating Demo Board

 Avoid personal contact with exposed metal surfaces when operating Demo Board
 Turn off Demo Board when placing or removing measurement probes

www.irf.com IRAUDAMP11 REV 1.0 Page 1 of 35

 TABLE OF CONTENTS PAGE
INTRODUCTION............................................................................................................................................... 3
SPECIFICATIONS ............................................................................................................................................ 3
CONNECTION SETUP ..................................................................................................................................... 5
CONNECTOR DESCRIPTION ......................................................................................................................... 5
TEST PROCEDURES....................................................................................................................................... 6
PERFORMANCE AND TEST GRAPHS .......................................................................................................... 7
CLIPPING CHARACTERISTICS.................................................................................................................... 10
SOFT CLIPPING............................................................................................................................................. 10
EFFICIENCY................................................................................................................................................... 12
THERMAL CONSIDERATIONS ..................................................................................................................... 12
THERMAL INTERFACE MATERIAL’S PRESSURE CONTROL ................................................................................. 13
POWER SUPPLY REJECTION RATIO (PSRR)............................................................................................ 15
SHORT CIRCUIT PROTECTION RESPONSE .............................................................................................. 16
IRAUDAMP11 OVERVIEW ............................................................................................................................ 17
FUNCTIONAL DESCRIPTIONS..................................................................................................................... 19
IRS2053 GATE DRIVER IC ............................................................................................................................ 19
SELF-OSCILLATING FREQUENCY .................................................................................................................... 20
ADJUSTMENTS OF SELF-OSCILLATING FREQUENCY ......................................................................................... 20
SELECTABLE DEAD-TIME ................................................................................................................................ 21
PROTECTION SYSTEM OVERVIEW ............................................................................................................ 22
CLICK AND POP NOISE REDUCTION ......................................................................................................... 24
BUS PUMPING............................................................................................................................................... 24
INPUT SIGNAL AND GAIN SETTING ........................................................................................................... 26
GAIN SETTING............................................................................................................................................... 26
IRAUDAMP11 FABRICATION MATERIALS................................................................................................. 28
IRAUDAMP11 HARDWARE .......................................................................................................................... 31
IRAUDAMP11 PCB SPECIFICATIONS......................................................................................................... 32
REVISION CHANGES DESCRIPTIONS........................................................................................................ 35

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Introduction
The IRAUDAMP11 Demo board is a reference design which uses only one IC (IRS2053M) to derive
appropriate input signals, amplify the audio input, and achieve a three-channel 120 W/ch (4Ω, THD+N=1%)
half-bridge Class D audio power amplifier. The reference design demonstrates how to use the IRS2053M
Class D audio controller and gate driver IC, implement protection circuits, and design an optimum PCB
layout using IRF6665 DirectFET MOSFETs. The reference design contains all the required housekeeping
power supplies for ease of use. The three-channel design is scalable, for power and number of channels.

Applications

 AV receivers
 Home theater systems
 Mini component stereos
 Powered speakers
 Sub-woofers
 Musical Instrument amplifiers
 Automotive after market amplifiers

Features

Output Power: 120W x 3 channels (4Ω, THD+N=1%)

or 170W x 3 channels (4Ω, THD+N=10%)
Residual Noise: 220V, IHF-A weighted, AES-17 filter
Distortion: 0.02% THD+N @ 60W, 4Ω
Efficiency: 90% @ 120W, 4Ω, single-channel driven, Class D stage
Multiple Protection Features: Over-current protection (OCP), high side and low side
Over-voltage protection (OVP),
Under-voltage protection (UVP), high side and low side
Over-temperature protection (OTP)
PWM Modulator: Self-oscillating half-bridge topology with optional clock synchronization

Specifications

General Test Conditions (unless otherwise noted) Notes / Conditions

Supply Voltages ±35V
Load Impedance 4Ω
Self-Oscillating Frequency 400kHz No input signal, Adjustable
Gain Setting 28dB 1Vrms input yields rated power

Electrical Data Typical Notes / Conditions

IR Devices Used IRS2053M Audio Controller and Gate-Driver,
IRF6665 DirectFET MOSFETs
Modulator Self-oscillating, second order sigma-delta modulation, analog input
Power Supply Range ± 25V to ±35V Bipolar power supply
Output Power CH1-3: (1% THD+N) 120W 1kHz, ±35V
Output Power CH1-3: (10% THD+N) 170W 1kHz, ±35V

www.irf.com IRAUDAMP11 REV 1.0 Page 3 of 35

Rated Load Impedance 8-4Ω Resistive load
Standby Supply Current +75/-95mA No input signal
Total Idle Power Consumption 6W No input signal
Channel Efficiency 90% Single-channel driven,
120W, Class D stage
.
Audio Performance Class D Notes / Conditions
Output
THD+N, 1W 0.015%
THD+N, 10W 0.01% 1kHz, Single-channel driven
THD+N, 60W 0.02%
THD+N, 100W 0.03%
A-weighted, AES-17 filter,
Dynamic Range 101dB
Single-channel operation
Residual Noise, 22Hz - 20kHzAES17 220V Self-oscillating – 400kHz

Damping Factor 67 1kHz, relative to 4Ω load

Channel Separation 75dB 100Hz
75dB 1kHz
70dB 10kHz
Frequency Response : 20Hz-20kHz ±1dB
1W, 4Ω - 8Ω Load
: 20Hz-35kHz ±3dB

Physical Specifications
Dimensions 3.94”(L) x 2.83”(W) x 0.85”(H)
100 mm (L) x 72 mm (W) x 21.5 mm(H)
Weight 0.130kgm

www.irf.com IRAUDAMP11 REV 1.0 Page 4 of 35

Connection Setup

Audio Signal Generator

CH1 CH2 CH3

Input
Frequency adjustor DS1 VCC INDICATOR

VR1
IRS2053M

IRF6665

Output Output
CH2 CH1 +B GND -B CH3
250W, 4Ω,
G
Non-inductive Resistors

35 V, 5 A DC supply 35 V, 5 A DC supply

Fig 1 Typical Test Setup

Connector Description

CH1 IN CN1 Analog input for CH1

CH2 IN CN1 Analog input for CH2
CH3 IN CN1 Analog input for CH3
SUPPLY P1 Positive and negative supply (+B / -B)
CH1 OUT P2 Output for CH1
CH2 OUT P2 Output for CH2
CH3 OUT P3 Output for CH3

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Test Procedures
Test Setup:

1. Connect 4-200 W dummy loads to 3 output connectors (P2 and P3 as shown on Fig 1)
and an Audio Precision analyzer (AP).
2. Connect the Audio Signal Generator to CN1 for CH1~CH3 respectively (AP).
3. Set up the dual power supply with voltages of ±35V; current limit to 5A.
4. TURN OFF the dual power supply before connecting to On of the unit under test (UUT).
5. Connect the dual power supply to P1. as shown on Fig 1

Power up:

6. Turn ON the dual power supply. The ±B supplies must be applied and removed at the
same time.
7. The Blue LED should turn ON immediately and stay ON
8. Quiescent current for the positive supply should be 75mA 10mA at +35V.
9. Quiescent current for the negative supply should be 95mA 10mA at –35V.

Switching Frequency test

10. With an Oscilloscope, monitor the switching waveform at test points VS1~VS3. Adjust VR1
to set the self oscillating frequency to 400 kHz  25 kHz when DUT in clock synchronize
mode.

Functionality Audio Tests:

11. Set the signal generator to 1kHz, 20 mVRMS output.

12. Connect the audio signal generator to CN1(Input of CH1,CH2,CH3)
13. Sweep the audio signal voltage from 15 mVRMS to 1 VRMS.
14. Monitor the output signals at P2/P3 with an oscilloscope. The waveform must be a non
distorted sinusoidal signal.
15. Observe that a 1 VRMS input generates an output voltage of 25.52 VRMS(CH1/CH2). The
ratio, R4x/(R3x) and R30x/(R31x), determines the voltage gain of IRAUDAMP11.

Test Setup using Audio Precision (Ap):

16. Use an unbalanced-floating signal from the generator outputs.

17. Use balanced inputs taken across output terminals, P2 and P3.
18. Connect Ap frame ground to GND at terminal P1.
19. Select the AES-17 filter(pull-down menu) for all the testing except frequency response.
20. Use a signal voltage sweep range from 15 mVRMS to 1 VRMS.
21. Run Ap test programs for all subsequent tests as shown in Fig 2- Fig 7below.

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Performance and test graphs
10
5

2
1
0.5

0.2
% 0.1
0.05

0.02
0.01
0.005

0.002
0.001
100m 200m 500m 1 2 5 10 20 50 100 200
W

S weep Trac e Color Line S ty le Thic k Data A x is Com m ent

1 1 Red S olid 2 A nlr.THD+ N Ratio Left CH1

1 3 B lue S olid 2 A nlr.THD+ N Ratio Left CH2
2 3 G reen S olid 2 A nlr.THD+ N Ratio Left

±B Supply = ±35V, 4 Ω Resistive Load

Fig 2 IRAUDAMP11, THD+N versus Power, Stereo, 4 Ω

.
+4
T
+3

+2

+1

-0

-1
d -2
B
r -3

A -4

-5

-6

-7

-8

-9

-10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 200k
Hz

CH1-Blue; CH2-Yellow; CH3-Red

±B Supply = ±35V, 4 Ω Resistive Load
Fig 3 IRAUDAMP11, Frequency response

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 Red CH1, 10W Output
Blue CH1, 50W Output
Fig 4 THD+N Ratio vs. Frequency

+0

-20

-40
d
B
-60
V
-80

-100

20 50 100 200 500 1k 2k 5k 10k 20k

Hz

Sweep Trace Color Line Style Thick Data Axis Comment

1 1 Yellow Solid 2 Fft.Ch.1 Ampl Left CH2

1 2 Blue Solid 2 Fft.Ch.2 Ampl Left CH3
2 1 Red Solid 2 Fft.Ch.1 Ampl Left CH1

Fig 5, 1V output Frequency Spectrum

www.irf.com IRAUDAMP11 REV 1.0 Page 8 of 35

 +0
-25

d -50
B
V -75
-100

-125

-150
10 20 50 100 200 500 1k 2k 5k 10k 20k
Hz

Sweep Trace Color Line Style Thick Data Axis Comment

1 1 Red Solid 2 Fft.Ch.1 Ampl Left CH1

1 2 Blue Solid 2 Fft.Ch.2 Ampl Left CH3
2 1 Yellow Solid 2 Fft.Ch.1 Ampl Left CH2

No signal, Self Oscillator @ 400kHz

Fig 6, IRAUDAMP11 Noise Floor

.
+0

-1 0

-2 0

-3 0

d -4 0
B
r -5 0

A -6 0

-7 0

-8 0

-9 0

-1 0 0
20 50 100 200 500 1k 2k 5k 10k 20k
Hz

S weep Tra c e C o lo r L in e S t y le Th ic k D ata A x is Com m ent

1 1 Cy an S o lid 2 A n lr. A m p l L e ft C H 3 _ o n ; C H 1 _ o ff
3 1 Y e llo w S o lid 2 A n lr. A m p l L e ft C H 1 _ o n ; C H 3 _ o ff
4 1 Red S o lid 2 A n lr. A m p l L e ft C H 2 _ o n ; C H 3 _ o ff
5 1 M agenta S o lid 2 A n lr. A m p l L e ft C H 3 _ o n ; C H 2 _ o ff
6 1 B lu e S o lid 1 A n lr. A m p l L e ft C H 2 _ o n ; C H 1 _ o ff
7 1 Cy an S o lid 1 A n lr. A m p l L e ft C h 1 _ o n ; C H 2 _ o ff

Fig 7, Channel separation vs. frequency

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Clipping characteristics

Red Trace: Total Distortion + Noise Voltage

Green Trace: Output Voltage

60W / 4, 1kHz, THD+N=0.02% 174W / 4, 1kHz, THD+N=10%

Measured Output and Distortion Waveforms(CH1/CH2)
Fig 8 Clipping Characteristics
.

Soft Clipping
IRS2053M has Clipping detection function, it monitors error voltage in COMP pin with a window
comparator and pull an open drain nmos referenced to GND. Threshold to detect is at 10% and
90% of VAA-VSS. Each channel has independent CLIP outputs. Once IRS2053M detects
Clipping, the CLIP pin will generate pulses to trigger soft clipping circuit as Fig 9, which limits
output’s maximum power.
Fig10 shows 20Hz and 20 kHz THD+N versus Power graph in CH3; it shows limitation of output’s
power with different frequency.

www.irf.com IRAUDAMP11 REV 1.0 Page 10 of 35

 Soft Clipping
R28A Q5
VAA
1K DTA144EKA

C15A R7A C6A

10uF, 16V 470K 1uF,50V

R5A
R29A GND
47K
220K
Audio signal INPUT
D3A
C0A 1N4148 R6A
R27A
47K
CLIP Detection

D
10uF,50V 3.3K

G R3A 1K
IN-
Q6

S
C5A
MMBFJ112
10uF, 50V

VSS

GND

Fig 9 Soft Clipping Circuit

10
5

2
1
0.5

0.2

% 0.1
0.05

0.02
0.01
0.005

0.002

0.001
100m 200m 500m 1 2 5 10 20 50 100 300
W

Sweep Trace Color Line Style Thick Data Axis Comment

1 1 Red Solid 2 Anlr.THD+N Ratio Left 20Hz

2 1 Blue Solid 2 Anlr.THD+N Ratio Left 20kHz

±B Supply = ±35V, 4 Ω Resistive Load

Fig 10 IRAUDAMP11/CH3, THD+N versus Power, Stereo, 4 Ω

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Efficiency

Fig 11 shows efficiency characteristics of the IRAUDAMP11. The high efficiency is achieved by
following major factors:
1) Low conduction loss due to the DirectFETs offering low RDS(ON)
2) Low switching loss due to the DirectFETs offering low input capacitance for fast rise and
fall times
Secure dead-time provided by the IRS2053M, avoiding cross-conduction.

Efficiency (%)
100%
90%
80%
Efficiency (%)

70%
60%
AMP11 35V 4ohms
50%
40%
30%
20%
10%
0%
0 50 100 150
Output power (W)

Fig 11, IRAUDAMP11 4 ohms load Stereo, ±B supply = ±35V

Thermal Considerations
With this high efficiency, the IRAUDAMP11 design can handle one-eighth of the continuous rated
power, which is generally considered to be a normal operating condition for safety standards,
without additional heatsinks or forced air-cooling.

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Thermal Interface Material’s Pressure Control
The pressure between DirectFET & TIM (Thermal Interface Material) is controlled by depth of Heat
Spreader’s groove. Choose TIM which is recommended by IR. (Refer to AN-1035 for more
details). TIM’s manufacturer thickness, conductivity, & etc. determine pressure requirement.
Below shows selection options recommended:

Fig 12 TIM Information

www.irf.com IRAUDAMP11 REV 1.0 Page 13 of 35

Check the TIM’s compression deflection with constant rate of strain (example as Fig.13) base on
manufacturer’s datasheet. According to the stress requirement, find strain range for the TIM. Then,
calculate heat spreader groove depth as below:

Groove Depth=DirectFET’s Height +TIM’s Thickness*strain

**DirectFET’s height should be measured from PCB to the top of DirectFET after reflow. The
average height of IRF6665 is 0.6mm.

Fig 13 compression deflection with constant rate of strain

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Power Supply Rejection Ratio (PSRR)
The IRAUDAMP11 obtains good power supply rejection ratio of -68 dB at 1kHz shown in Fig 14.
With this high PSRR, IRAUDAMP11 accepts any power supply topology when the supply voltages
fit between the min and max range.

+0

-10

-20

-30

d -40
B
V -50

-60

-70

-80

-90
20 50 100 200 500 1k 2k 5k 10k 20k 40k
Hz

Sweep Trace Color Line Style Thick Data Axis Comment

1 1 Magenta Solid 2 Anlr.Ampl Left

Fig 14 Power Supply Rejection Ratio (PSRR)

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Short Circuit Protection Response
Figs 15-16 show over current protection reaction time of the IRAUDAMP11 in a short circuit event.
As soon as the IRS2053M detects an over current condition, it shuts down PWM. After one
second, the IRS2053M tries to resume the PWM. If the short circuit persists, the IRS2053M
repeats try and fail sequences until the short circuit is removed.

Short Circuit in Positive and Negative Load Current

CSD pin CSD pin

VS pin VS pin
Load current Load current

Positive OCP Negative OCP

Fig 15 Positive and Negative OCP Waveforms

.

OCP Waveforms Showing CSD Trip and Hiccup

CSD pin CSD pin

VS pin VS pin

Load current Load current

Fig 16 OCP Response with Continuous Short Circuit

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IRAUDAMP11 Overview

The IRAUDAMP11 features a 3CH self-oscillating type PWM modulator for the smallest space,
highest performance and robust design. This topology represents an analog version of a second-
order sigma-delta modulation having a Class D switching stage inside the loop. The benefit of the
sigma-delta modulation, in comparison to the carrier-signal based modulation, is that all the error
in the audible frequency range is shifted to the inaudible upper-frequency range by nature of its
operation. Also, sigma-delta modulation allows a designer to apply a sufficient amount of error
correction.

The IRAUDAMP11 self-oscillating topology consists of following essential functional blocks.

 Front-end integrator
 PWM comparator
 Level shifters
 Gate drivers and MOSFETs
 Output LPF

Integrator

Referring to Fig 17 below, the input operational amplifier of the IRS2053M forms a front-end
second-order integrator with R3x, C2x, C3x, and R2x. The integrator that receives a rectangular
feedback signal from the PWM output via R4x and audio input signal via R3x generates a
quadratic carrier signal at the COMP pin. The analog input signal shifts the average value of the
quadratic waveform such that the duty cycle varies according to the instantaneous voltage of the
analog input signal.

PWM Comparator

The carrier signal at the COMP pin is converted to a PWM signal by an internal comparator that
has a threshold at middle point between VAA and VSS. The comparator has no hysteresis in its
input threshold.

Level Shifters

The internal input level-shifter transfers the PWM signal down to the low-side gate driver section.
The gate driver section has another level-shifter that level shifts up the high-side gate signal to the
high-side gate driver section.

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Gate Drivers and DirectFETs

The received PWM signal is sent to the dead-time generation block where a programmable
amount of dead time is added into the PWM signal between the two gate output signals of LO and
HO to prevent potential cross conduction across the output power DirectFETs. The high-side level-
shifter shifts up the high-side gate drive signal out of the dead-time block.
Each channel of the IRS2053M’s drives two DirectFETs, high- and low-sides, in the power stage
providing the amplified PWM waveform.

Output LPF

The amplified PWM output is reconstructed back to an analog signal by the output LC LPF.
Demodulation LC low-pass filter (LPF) formed by L1 and C13, filters out the Class D switching
carrier signal leaving the audio output at the speaker load. A single stage output filter can be used
with switching frequencies of 400 kHz and greater; a design with a lower switching frequency may
require an additional stage of LPF.

Fig 17 Simplified Block Diagram of IRAUDAMP11 Class D Amplifier

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Functional Descriptions
IRS2053M Gate Driver IC

The IRAUDAMP11 uses the IRS2053M, a 3 Channel high-voltage (up to 200 V), high-speed
power MOSFET driver with internal dead-time and protection functions specifically designed for
Class D audio amplifier applications. These functions include OCP and UVP. The IRS2053M
integrates bi-directional over current protection for both high-side and low-side MOSFETs. The
dead-time can be selected for optimized performance according to the size of the MOSFET,
minimizing dead-time while preventing shoot-through. As a result, there is no gate-timing
adjustment required externally. Selectable dead-time through the DT pin voltage is an easy and
reliable function which requires only two external resistors, R12 and R13 as shown on Fig 18 or
Fig 24 below.

The IRS2053M offers the following functions.

 PWM modulator
 Dead-time insertion
 Over current protection
 Under voltage protection
 Level shifters

Refer to IRS2053M datasheet and AN-1158 for more details.

L1A
CH3 OUTPUT
22uH
R24A 2.2K
2.2K

GND
NC

R14A 4.7R
C16A
0.01uF
C16B
0.01uF
R10

R12

R32A 10R RpA 95C

R22A
10K

0.1uF, 63V 10R,1W

R21A
0.47uF, 400V
R28A GND
C9A

Q5 R32B 10R RpB 95C R20A Q1A

1K

10uF,16V

R12A
IRF6665 N/A
1K

C14A
R32C 10R RpC 95C 22R
R11 8.2K

C13A
C16C
R13

0.01uF

DTA144EKA R4A
100K 1% Q2A
C6A R9A
R7A R5A IRF6665
0.1uF,50V
36

35

34

33

32

31

30

29

28

27

26

25

470K 47K 22R

0.1uF, 63V
0.47uF, 400V
D1A 1N4148

1uF,50V GND
C10A

C19A R19A

0.1uF, 63V
0.47uF, 400V

GND C15A R15A

1R
VREF
NC

VCC

COM

NC

R29A D3A R6A

OTP3

OTP2

OTP1

VS3

HO3
OCSET

DT

10K R17A
C12A 220K 10uF, 16V

C14B

C14C
1N4148 47K C2A 2.2nF,50V C3A 2.2nF,50V 37 10K
DS 24
0.1uF,100V

R1A 22K VB3 R16A

220pF R31A 10K R30A 10K R27A C4A
CH3 INPUT 38
C13B

C13C

C1A 100pF, 50V R2A 120R COMP3 23

10R,1W

10R,1W
1nF,50V CSH3 3.9K
MMBFJ112 Q6

3.3K GND
R21B

R21C
D

R31B R30B R3A 1K 39 L1B

IN3 22 R18A R24B 2.2K
R22C
10K

NC
10K 15K C5A 10uF, 16V
40 D2A 1N4148 4.7R CH2 OUTPUT
G GND 21
LO3 22uH
CN1 C12B IC3 IC1
GND 41
S

220pF 7 8 GND R6 10R GND 20

CH3 6 2OUT 3OUT C6 4.7uF,10V IRS2053 COM2 GND
6 9 VSS C9B L1C
GND 5 GND 2IN- 3IN- 42 R24C 2.2K
5 10 VSS -B 19 10uF,16V
0

GND 4 2IN+ 3IN+ VCC2

GND 4 11 VAA R14B CH1 OUTPUT
CH2 3 VDD GND C7 43 18
-B

3 12 R7 10R VAA LO2 22uH

GND 2 1IN+ 4IN+ R3B 5.6K 4.7uF,10V
2 13 4.7R
CH1 1 1IN- 4IN- CH2 INPUT C2B R2B 44 17
1 14 C5B 10uF, 16V 1nF,50V C4B IN2 LO1
1OUT 4OUT Q1B
GND R1B 22K 120R C3B R20B
45 16 IRF6665
TLC084 COMP2 NC R18C
C1B 100pF, 50V 2.2nF,50V D2C
R31C R30C 15K R3C 5.6K
2.2nF,50V
46 15
22R
IN1 CSH1 4.7R
CH1 INPUT R2C C4C 1nF,50V 1N4148
C12C 10K C5C 10uF, 16V C2C
120R 47 14 Q2B
C10 C11 R1C 22K C3C COMP1 VB1 R9B
D1C

220pF R16C IRF6665

0.1uF,50V

4.7uF,10V 4.7uF,10V 2.2nF,50V

C1C 100pF, 50V 2.2nF,50V 48 13 +B
FAULT

GND CSD HO1 3.9K 22R

CLIP3

CLIP2

CLIP1

CSH2

GND R17C
C10C
HO2
DCP

R23A
VB2

C17C C17A
VS2

VS1

R15C 10K
NC

NC

R14 R15
R19C

R19B

10K 0.1uF,50V 100k 1000uF,35V

1R

1R

10R 10R
1N4148

R1 R20C Q1C
R22 IRF6665
1

10

11

12

10R 22R GND

0.1uF,100V

0.1uF,100V

0R0 or N/A
1N4148

R4C CSD R12B

100K 1% N/A R23B C17B
C19C

C19B

DSA DSB DSC PROT

D3

Q2C
10uF, 16V

R9C C17D 100k 1000uF,35V

100uF,4V
C8

R4B IRF6665 0.1uF,50V

D2B -B
R26A 10K

R26B 10K

R26C 10K

10K

100K 1% R18B 22R

1N4148 R12C
C10B R15B R17B 4.7R N/A
R104

10K
R4 0R0 or N/A D4
C9

0.1uF,50V 10K R16B D1B

1N4148
3.9K P3
1N4148
SD VAA
1
R22B 10K
GND 2
GND 3
CH3 OUTPUT 4

R51 10k Z7 39V

+B
+5v
C1 Q8 ZX5T853 R43 R47 R52 10k OVP
Z8 39V
-B
0.1uF,50V 330R,1W 330R,1W R25A 100K
R45 CH3 OUTPUT
R25B 100K
33k CH2 OUTPUT
R3 Z5 R25C 100K
22k C40 5.6V CH1 OUTPUT
IC2 N/A
LTC1799
VR1 1 5
VCC OUT C41 Z6
10K 2 P2
GND N/A 5.6V
3 4
SET DIT R46 CH1 OUTPUT 4CH2
GND 3
33k GND 2
Q9 R44 CH2 OUTPUT 1CH1
1 8 ZX5T953 510R,1W
1A VCC
-5v Z2
2 7 R36
1B 1Y
Z4 5.1k 15V
3 6 R54
2Y 2B 10k R57 18V R37
4 5 R56 47k IC9 47k
GND 2A 47k VCC Q1
R50 L5 220uH R49 10R
1 8
IC8 Z3 47k SW VIN
TC7W00FFCT-ND 39V R53 C35 R39 Q2
C34 2 7
R31 2.2nF,50V BST VCC 100k
10k 5.1k R42 MMBT5401
0.01uF, 25V 3 6
RCL RON/SD FX491
MMBT5551

3.3k
R41
4 5 P1
120k RTN FB
C61 Q4 C32
D7 +B 3
22uF, 16V

MMBT5551 2.2uF, 50V

Q3

C37

R58 R32 C36 R38 GND 2

R40 LM5007 Z1
47k 1k 0.01uF, 50V 10R -B 1
0.01uF, 50V R55 100k C33
DS1

24V
47k 0.1uF, 50V
OVP UVP
R61 10k
C62

0.01uF, 50V

R62 10k

GND GND

For EMI

Fig 18 System-level View of IRAUDAMP11

www.irf.com IRAUDAMP11 REV 1.0 Page 19 of 35

Self-Oscillating Frequency

Self-oscillating frequency is determined by the total delay time along the control loop of the
system; the propagation delay of the IRS2053M, the DirectFETs switching speed, the time-
constant of front-end integrator (R2, R3, R4, C2, C3 ). Variations in +B and –B supply voltages
also affect the self-oscillating frequency.

The self-oscillating frequency changes with the duty ratio. The frequency is highest at idling. It
drops as duty cycle varies away from 50%.

Adjustments of Self-Oscillating Frequency

Use R2 to set different self-oscillating frequencies. The PWM switching frequency in this type of
self-oscillating switching scheme greatly impacts the audio performance, both in absolute
frequency and frequency relative to the other channels. In absolute terms, at higher frequencies,
distortion due to switching-time becomes significant, while at lower frequencies, the bandwidth of
the amplifier suffers. In relative terms, interference between channels is most significant if the
relative frequency difference is within the audible range.

Normally, when adjusting the self-oscillating frequency of the different channels, it is suggested to
either match the frequencies accurately, or have them separated by at least 25kHz. Under the
normal operating condition with no audio input signal, the switching-frequency is set around
400kHz in the IRAUDAMP11.

www.irf.com IRAUDAMP11 REV 1.0 Page 20 of 35

Selectable Dead-time

The dead-time of the IRS2053 is set based on the voltage applied to the DT pin. Fig 19 lists the
suggested component value for each programmable dead-time between 45 and 105 ns.
All the IRAUDAMP11 models use DT1 (45ns) dead-time.

Dead-time Mode R1 R2 DT/SD Voltage

DT1 <10k Open Vcc
DT2 5.6k 4.7k 0.46 x Vcc
DT3 8.2k 3.3k 0.29 x Vcc
DT4 Open <10k COM

Recommended Resistor Values for Dead Time Selection

Dead- time

45nS
IRS2053M
>0.5mA
65nS Vcc

85nS
R1
DT
105nS
R2
VDT
0.23xVcc 0.36xVcc 0.57xVcc Vcc COM

Fig 19 Dead-time Settings vs. VDT Voltage

www.irf.com IRAUDAMP11 REV 1.0 Page 21 of 35

Protection System Overview
The IRS2053M integrates over current protection (OCP) inside the IC. The rest of the protections,
such as over-voltage protection (OVP), under-voltage protection (UVP), and over temperature
protection (OTP), are detected externally to the IRS2053M (Fig 20).

The external shutdown circuit will disable the output by pulling down CSD pins, (Fig 21). If the
fault condition persists, the protection circuit stays in shutdown until the fault is removed.

R60
SD
15k

GND
Q5
MMBT5551
R54 Z4
10k R57 18V IC6
R51
R56 47k LM26CIM5-XHA
22k
47k 5 1
OS HT
R50 2
Z3 GND
47k R59 4 3
39V R53 VCC VT
22k
OTP
10k
R52
MMBT5551

15k
Q4 D51
MMBT5551 4.7V
Q3

R58
R55 47k
47k
OVP UVP

-B

Fig 20 DCP, OTP, UVP and OVP Protection Circuits

.

Fig 21 Simplified Functional Diagram of OCP

www.irf.com IRAUDAMP11 REV 1.0 Page 22 of 35

Over-Current Protection (OCP)
Low-Side Current Sensing

The low-side current sensing feature protects the low side DirectFET from an overload condition
from negative load current by measuring drain-to-source voltage across RDS(ON) during its on state.
OCP shuts down the switching operation if the drain-to-source voltage exceeds a preset trip level.
The voltage setting on the OCSET pin programs the threshold for low-side over-current sensing.
When the VS voltage becomes higher than the OCSET voltage during low-side conduction, the
IRS2053 turns the outputs off and pulls CSD down to -VSS.

High-Side Current Sensing

The high-side current sensing protects the high side DirectFET from an overload condition from
positive load current by measuring drain-to-source voltage across RDS(ON) during its on state. OCP
shuts down the switching operation if the drain-to-source voltage exceeds a preset trip level.

High-side over-current sensing monitors drain-to-source voltage of the high-side DirectFET during
the on state through the CSH and VS pins. The CSH pin detects the drain voltage with reference
to the VS pin, which is the source of the high-side DirectFET. In contrast to the low-side current
sensing, the threshold of the CSH pin to trigger OC protection is internally fixed at 1.2V. An
external resistive divider R15, R16 and R17 are used to program a threshold as shown in Fig 20.
An external reverse blocking diode D1 is required to block high voltage feeding into the CSH pin
during low-side conduction. By subtracting a forward voltage drop of 0.6V at D1, the minimum
threshold which can be set for the high-side is 0.6V across the drain-to-source.

Over-Voltage Protection (OVP)

OVP is provided externally to the IRS2053M. OVP shuts down the amplifier if the bus voltage
between GND and -B exceeds 39V. The threshold is determined by a Zener diode Z3. OVP
protects the board from harmful excessive supply voltages, such as due to bus pumping at very
low frequency-continuous output in stereo mode.

Under-Voltage Protection (UVP)

UVP is provided externally to the IRS2053M. UVP prevents unwanted audible noise output from
unstable PWM operation during power up and down. UVP shuts down the amplifier if the bus
voltage between GND and -B falls below a voltage set by Zener diode Z4.

www.irf.com IRAUDAMP11 REV 1.0 Page 23 of 35

Offset Null (DC Offset) Adjustment

The IRAUDAMP11 requires no output-offset adjustment. DC offsets are tested to be less than ±20
mV.

Over-Temperature Protection (OTP)

A Preset Thermostat IC, IC6 in Fig 19, is placed in close proximity to the heatsink which has 6
DirectFETs under it; and monitors heatsink temperature. If the heatsink temperature rises above
100 C, the OTP shuts down all 3 channels by pulling down the CSD pins of the IRS2053M. OTP
recovers once the temperature has cooled down.

Click and POP Noise Reduction

Thanks to the click and pop elimination function built into the IRS2053M, the IRAUDAMP11 does
not require any additional components for this function.

Power Supply Requirements

For convenience, the IRAUDAMP11 has all the necessary housekeeping power supplies onboard
and only requires a pair of symmetric power supplies. Or use the IRAUDPS1 reference design
which is a 12 volt systems Audio Power Supply for automotive applications designed to provide
voltage rails (+B and –B) for Class D audio power amplifiers .

House Keeping Power Supply

The internally-generated housekeeping power supplies include ±5V for analog signal processing,
and +12V supply (VCC) referred to the negative supply rail -B for DirectFET gate drive. The gate
driver section of the IRS2053M uses VCC to drive gates of the DirectFETs. VCC is referenced to –
B (negative power supply). D2, R18 and C10 form a bootstrap floating supply for the HO gate
driver.

Bus Pumping

When the IRAUDAMP11 is running in stereo mode, the bus pumping effect takes place with low
frequency, high output. Since the energy flowing in the Class D switching stage is bi-directional,
there is a period where the Class D amplifier feeds energy back to the power supply. The majority
of the energy flowing back to the supply is from the energy stored in the inductor in the output LPF.

www.irf.com IRAUDAMP11 REV 1.0 Page 24 of 35

Usually, the power supply has no way to absorb the energy coming back from the load.
Consequently the bus voltage is pumped up, creating bus voltage fluctuations.

Following conditions make bus pumping worse:

1. Lower output frequencies (bus-pumping duration is longer per half cycle)

2. Higher power output voltage and/or lower load impedance (more energy transfers between
supplies)
3. Smaller bus capacitance (the same energy will cause a larger voltage increase)

The OVP protects IRAUDAMP11 from failure in case of excessive bus pumping. One of the
easiest counter measures of bus pumping is to drive both of the channels in a stereo configuration
out-of-phase so that one channel consumes the energy flow from the other and does not return it
to the power supply. Bus voltage detection monitors only +B supply, assuming the bus pumping
on the supplies is symmetric in +B and -B supplies.

Blue: VS of CH3;Cyan: VS of CH2;Magenta: Voltage of +B;Green:Current of C13A

Fig 22 Auto-phase sync clock’s BUS Pumping when idling

www.irf.com IRAUDAMP11 REV 1.0 Page 25 of 35

Load Impedance

Each channel is optimized for a 4 Ω speaker load in half bridge.

Input Signal and Gain Setting

A proper input signal is an analog signal ranging from 20Hz to 20kHz with up to 3 VRMS amplitude
with a source impedance of no more than 600 Ω. Input signal with frequencies from 30kHz to
60kHz may cause LC resonance in the output LPF, causing a large reactive current flowing
through the switching stage, especially with greater than 8 Ω load impedances, and the LC
resonance can activate OCP.

The IRAUDAMP11 has an RC network called a Zobel network (R21 and C14) to damp the
resonance and prevent peaking frequency response with light loading impedance. (Fig 23)

Fig 23 Output Low Pass Filter and Zobel Network

Gain Setting

The ratio of resistors R4A~C/R1A~C in Fig 24 sets voltage gain. The IRAUDAMP11 has no on board
volume control. To change the voltage gain, change the input resistor term R1A~C. Changing R4A~C
affects PWM control loop design and may result poor audio performance.

www.irf.com IRAUDAMP11 REV 1.0 Page 26 of 35

 Schematic L1A

22uH
R24A 2.2K
CH3 OUTPUT

2.2K
GND

NC
R14A 4.7R

C16A
0.01uF
C16B
0.01uF
R10

R12
R32A 10R RpA 95C

R22A
10K

0.1uF, 63V 10R,1W

R21A
0.47uF, 400V
R28A GND

C9A
Q5 R32B 10R RpB 95C R20A Q1A

1K

10uF,16V
R12A
IRF6665 N/A
1K

C14A
R32C 10R RpC 95C 22R

R11 8.2K

C13A
C16C
R13

0.01uF
DTA144EKA R4A
100K 1% Q2A
C6A R9A
R7A R5A IRF6665

0.1uF,50V
36

35

34

33

32

31

30

29

28

27

26

25
470K 47K 22R

0.1uF, 63V
0.47uF, 400V
D1A 1N4148
1uF,50V GND

C10A

C19A R19A

0.1uF, 63V
0.47uF, 400V
GND C15A R15A

1R
R29A D3A R6A

VREF
NC

VCC

NC
COM

OTP3

OTP2

OTP1

VS3

HO3
OCSET

DT
10K R17A
C12A 220K 10uF, 16V

C14B

C14C
1N4148 47K C2A 2.2nF,50V C3A 2.2nF,50V 37 10K
DS 24

0.1uF,100V
R1A 22K VB3 R16A
220pF R31A 10K R30A 10K R27A C4A
CH3 INPUT 38

C13B

C13C
C1A 100pF, 50V R2A 120R COMP3 23

10R,1W

10R,1W
1nF,50V CSH3 3.9K

MMBFJ112 Q6
3.3K GND

R21B

R21C
D
R31B R30B R3A 1K 39 L1B
IN3 22 R18A R24B 2.2K

R22C
10K
NC
10K 15K C5A 10uF, 16V
40 D2A 1N4148 4.7R CH2 OUTPUT
G GND 21
LO3 22uH
CN1 C12B IC3 IC1
GND 41
S

220pF 7 8 GND R6 10R GND 20

CH3 6 2OUT 3OUT C6 4.7uF,10V IRS2053 COM2 GND
6 9 VSS C9B L1C
GND 5 GND 2IN- 3IN- 42 R24C 2.2K
5 10 VSS -B 19 10uF,16V

0
GND 4 2IN+ 3IN+ VCC2
GND 4 11 VAA R14B CH1 OUTPUT
CH2 3 VDD GND C7 43 18
3 12 R7 10R VAA LO2 22uH

-B
GND 2 1IN+ 4IN+ R3B 5.6K 4.7uF,10V
2 13 4.7R
CH1 1 1IN- 4IN- CH2 INPUT C2B R2B 44 17
1 14 C5B 10uF, 16V 1nF,50V C4B IN2 LO1
1OUT 4OUT Q1B
GND R1B 22K 120R C3B R20B
45 16 IRF6665
TLC084 COMP2 NC R18C
C1B 100pF, 50V 2.2nF,50V D2C
R31C R30C 15K R3C 5.6K
2.2nF,50V
46 15
22R
IN1 CSH1 4.7R
CH1 INPUT R2C C4C 1nF,50V 1N4148
C12C 10K C5C 10uF, 16V C2C
120R 47 14 Q2B
C10 C11 R1C 22K C3C COMP1 VB1 R9B

D1C
220pF R16C IRF6665
4.7uF,10V 4.7uF,10V 2.2nF,50V

0.1uF,50V
C1C 100pF, 50V 2.2nF,50V 48 13 3.9K +B

FAULT
GND CSD HO1 22R

CLIP3

CLIP2

CLIP1

CSH2
GND R17C

C10C
HO2
DCP
R23A C17A

VB2
C17C

VS2

VS1
R15C 10K

NC

NC
R14 R15

R19C

R19B
10K 0.1uF,50V 100k 1000uF,35V

1R

1R
10R 10R

1N4148
R1 R20C Q1C
R22 IRF6665

10

11

12
10R 22R GND

0.1uF,100V

0.1uF,100V
0R0 or N/A
CSD R12B

1N4148
R4C
100K 1% N/A R23B C17B

C19C

C19B
DSA DSB DSC PROT

D3
R9C Q2C C17D 100k 1000uF,35V

10uF, 16V

100uF,4V
C8
R4B IRF6665 0.1uF,50V
D2B -B

R26A 10K

10K

10K

10K
100K 1% R18B 22R
1N4148 R12C
C10B R15B R17B 4.7R N/A

R26B

R26C

R104
10K
R4 0R0 or N/A D4

C9
0.1uF,50V 10K R16B D1B
1N4148
3.9K P3
1N4148
SD VAA
1
R22B 10K
GND 2
GND 3
CH3 OUTPUT 4

R51 10k Z7 39V

+B
+5v
C1 Q8 ZX5T853 R43 R47 R52 10k OVP
Z8 39V
-B
0.1uF,50V 330R,1W 330R,1W R25A 100K
R45 CH3 OUTPUT
R25B 100K
33k CH2 OUTPUT
R3 Z5 R25C 100K
22k C40 5.6V CH1 OUTPUT
IC2 N/A
LTC1799
VR1 1 5
VCC OUT C41 Z6
10K 2 P2
GND N/A 5.6V
3 4
SET DIT R46 CH1 OUTPUT 4CH2
GND 3
33k GND 2
Q9 R44 CH2 OUTPUT 1CH1
1 8 ZX5T953 510R,1W
1A VCC
-5v Z2
2 7 R36
1B 1Y
Z4 5.1k 15V
3 6 R54
2Y 2B 10k R57 18V R37
4 5 R56 47k IC9 47k
GND 2A 47k VCC Q1
R50 L5 220uH R49 10R
1 8
IC8 Z3 47k SW VIN
TC7W00FFCT-ND 39V R53 C35 R39 Q2
C34 2 7
R31 2.2nF,50V BST VCC 100k
10k 5.1k R42 MMBT5401
0.01uF, 25V 3 6
RCL RON/SD FX491
MMBT5551

3.3k
R41
4 5 P1
120k RTN FB
C61 Q4 C32
D7 +B 3
MMBT5551 2.2uF, 50V

22uF, 16V
Q3

C37
R58 R32 C36 R38 GND 2
R40 LM5007 Z1
47k 1k 0.01uF, 50V 10R -B 1
0.01uF, 50V R55 DS1 100k C33 24V
47k 0.1uF, 50V
OVP UVP
R61 10k
C62

0.01uF, 50V

R62 10k

GND GND

For EMI

Fig 24 IRAUDAMP11 Schematic

www.irf.com IRAUDAMP11 REV 1.0 Page 27 of 35

 IRAUDAMP11 Fabrication Materials
Table 1 IRAUDAMP11 Electrical Bill of Materials
Quantity Value Description Designator Part Number Vender
CAP CER .1UF 50V 10% X7R Murata Electronics
1 0.1uF,50V 0603 C1 490-1519-1-ND North America
CAP CERAMIC 100PF 50V NP0
3 100pF, 50V 0603 C1A, C1B, C1C 399-1061-1-ND Kemet
C2A, C2B, C2C,
CAP CER 2200PF 50V 10% C3A, C3B, Murata Electronics
7 2.2nF,50V X7R 0603 C3C, C35 490-1500-1-ND North America
CAP 1000PF 50V
3 1nF,50V CERAMICX7R 0603 C4A, C4B, C4C 399-1082-1-ND Kemet
3 10uF, 16V CAP 10UF 16V HA ELECT SMD C5A, C5B, C5C PCE4179CT-ND Panasonic - ECG
CAP CERM 4.7UF 10V Y5V
4 4.7uF,10V 0805 C6, C7, C10, C11 478-1429-1-ND AVX Corporation
Murata Electronics
1 1uF,50V CAP CER 1UF 50V X7R 0805 C6A 490-4736-1-ND North America
CAP CER 10UF 16V X7R 20%
2 10uF, 16V 1206 C8, C15A 445-1601-1-ND TDK Corporation
CAP 100UF 4V ELECT WX
1 100uF,4V SMD C9 493-2079-1-ND Nichicon
Murata Electronics
2 10uF,16V CAP CER 10UF 16V Y5V 0805 C9A, C9B 490-3347-1-ND North America
CAP .10UF 50V CERAMIC X7R
3 0.1uF,50V 0805 C10A, C10B, C10C 311-1140-1-ND Yageo
CAP CER 220PF 50V 10% X7R Murata Electronics
3 220pF 0603 C12A, C12B, C12C 490-1483-1-ND North America
CAP .47UF 400V METAL
3 0.47uF, 400V POLYPRO C13A, C13B, C13C 495-1315-ND EPCOS Inc
CAP FILM MKP .1UF 63VDC Vishay/BC
3 0.1uF, 63V 2% C14A, C14B, C14C BC2054-ND Components
CAP 10000PF 25V CERM X7R C16A, C16B,
4 0.01uF, 25V 0603 C16C,C34 PCC1763CT-ND Panasonic - ECG
CAP 1000UF 35V ELECT SMG
2 1000uF,35V RAD C17A, C17B 565-1086-ND United Chemi-Con
CAP .10UF 50V CERAMIC X7R
2 0.1uF,50V 1206 C17C, C17D 399-1249-1-ND Kemet
CAP CER .10UF 100V X7R
3 0.1uF,100V 10% 0805 C19A, C19B, C19C 445-1418-1-ND TDK Corporation
Murata Electronics
1 2.2uF, 50V CAP CER 2.2UF 50V X7R 1206 C32 490-3367-1-ND North America
CAP CER .1UF 50V 10% X7R Murata Electronics
1 0.1uF, 50V 0805 C33 490-1666-1-ND North America
CAP CER 10000PF 50V 20% Murata Electronics
1 0.01uF, 50V X7R 0603 C36 490-1511-1-ND North America
1 22uF, 16V CAP CER 22UF 16V X7R 1210 C37 445-3945-1-ND TDK Corporation
2 N/A C40, C41 N/A
CAP 10000PF 50V CERAMIC
2 0.01uF, 50V X7R 0603 C61, C62 399-1091-1-ND Kemet
TERMINAL BLOCK 3.5MM On Shore Technology
1 Header 6 6POS PCB CN1 ED1518-ND Inc
D1A, D1B, D1C,
DIODE SWITCH 100V 400MW D2A, D2B, D2C,
9 1N4148 SOD-123 D3, D3A, D4 1N4148W-FDICT-ND Diodes Inc
DIODE SCHOTTKY 100V 1.5A
1 DIODE1 SMA D7 10MQ100NPBFCT-ND Vishay/Semiconductors
LED 468NM BLUE CLEAR 0603 DS1, DSA, DSB,
4 BLUE LED SMD DSC 160-1646-1-ND Lite-On Inc
1 IRS2053 3ch Audio Class D Controller IC1 IR2053MPBF International Rectifier
IC OSCILLATOR RES SET LTC1799CS5#TRMPBFCT-
1 LTC1799 TSOT23-5 IC2 ND Linear Technology
IC OPAMP GP 10MHZ QUAD
1 TLC084 14SOIC IC3 296-7287-1-ND Texas Instruments

www.irf.com IRAUDAMP11 REV 1.0 Page 28 of 35

 TC7W00FFCT- IC GATE NAND DUAL 2INPUT
1 ND 8-SOP IC8 TC7W00FFCT-ND Toshiba
National
1 LM5007 IC BUCK ADJ .5A 8LLP IC9 LM5007SDCT-ND Semiconductor
3 22uH Class D inductor, 22uH L1A, L1B, L1C 7G14A-220M-B Inductors,Inc.
POWER INDUCTOR 220UH SUMIDA AMERICA
1 220uH 0.49A SMD L5 308-1538-1-ND COMPONENTS INC
CONN TERM BLOCK PCB
1 Header 3 5.0MM 3POS P1 281-1415-ND Weidmuller
TERMINAL BLOCK 3.5MM On Shore Technology
2 SP OUT 4POS PCB P2, P3 ED1516-ND Inc
1 RED LED LED RED CLEAR 0603 SMD PROT 160-1181-1-ND Lite-On Inc
TRANS HP NPN 60V 1000MA
1 FX491 SOT23-3 Q1 FMMT491CT-ND Diodes/Zetex
Q1A, Q1B, Q1C,
MOSFET N-CH 100V 4.2A Q2A,
6 IRF6665 DIRECTFET Q2B, Q2C IRF6665 International Rectifier
TRANS PNP 150V 350MW
1 MMBT5401 SMD SOT23-3 Q2 MMBT5401-FDICT-ND Diodes Inc
TRANS NPN 160V 350MW
2 MMBT5551 SMD SOT23-3 Q3, Q4 MMBT5551-FDICT-ND Diodes Inc
TRAN DIGITL PNP 50V 30MA
1 DTA144EKA SOT-346 Q5 DTA144EKAT146CT-ND Rohm Semiconductor
IC SWITCH ANALOG N-CH Fairchild
1 MMBFJ112 SOT-23 Q6 MMBFJ112CT-ND Semiconductor
TRANSISTOR 4.5A 100V SOT-
1 ZX5T853 89 Q8 ZX5T853ZCT-ND Diodes/Zetex
TRANSISTOR PNP 3.5A 100V
1 ZX5T953 SOT-89 Q9 ZX5T953ZCT-ND Diodes/Zetex
1 0R0 RES 0.0 OHM 1/10W 0603 SMD R1 P0.0GCT-ND Panasonic - ECG
RES 22K OHM 1/10W 5% 0603
4 22K SMD R1A, R1B, R1C, R3 RHM22KGCT-ND Rohm Semiconductor
RES 120 OHM 1/10W 5% 0603
3 120R SMD R2A, R2B, R2C RHM120GCT-ND Rohm Semiconductor
RES 1.0K OHM 1/10W 5% 0603
3 1K SMD R3A, R13, R32 RHM1.0KGCT-ND Rohm Semiconductor
RES 5.6K OHM 1/10W 5% 0603
2 5.6K SMD R3B, R3C RHM5.6KGCT-ND Rohm Semiconductor
RES 100K OHM 1/8W 1% 0805
3 100K 1% SMD R4A, R4B, R4C RHM100KCRCT-ND Rohm Semiconductor
R5A, R6A, R37,
RES 47K OHM 1/10W 5% 0603 R50, R55, R56,
8 47K SMD R57, R58 RHM47KGCT-ND Rohm Semiconductor
R6, R7, R14, R15,
R22,
RES 10 OHM 1/10W 5% 0603 R32A, R32B,
10 10R SMD R32C, R38, R49 RHM10GCT-ND Rohm Semiconductor
RES 470K OHM 1/10W 5%
1 470K 0603 SMD R7A RHM470KGCT-ND Rohm Semiconductor
R9A, R9B, R9C,
RES 22 OHM 1/10W 5% 0603 R20A,
6 22R SMD R20B, R20C RHM22GCT-ND Rohm Semiconductor
RES 2.2K OHM 1/10W 5% 0603
1 2.2K SMD R10 RHM2.2KGCT-ND Rohm Semiconductor
RES 8.2K OHM 1/10W 5% 0603
1 8.2K SMD R11 RHM8.2KGCT-ND Rohm Semiconductor
1 NC R12 N/A
3 N/A R12A, R12B, R12C N/A
RES 4.7 OHM 1/10W 5% 0603 R14A, R14B, R18A,
5 4.7R SMD R18B, R18C RHM4.7GCT-ND Rohm Semiconductor
R15A, R15B, R15C,
R17A, R17B,
R17C,R22A, R22B,
R22C, R28A, R29A,
RES 10K OHM 1/10W 5% 0603 R30A,R31A, R31B,
25 10K SMD R31C, R51, R52, RHM10KGCT-ND Rohm Semiconductor

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 R53, R54,R61, R62,
R104, R26A, R26B,
R26C
RES 3.9K OHM 1/10W 5% 0603
3 3.9K SMD R16A, R16B, R16C RHM3.9KGCT-ND Rohm Semiconductor
RES 1.0 OHM 1/8W 5% 0805
3 1R SMD R19A, R19B, R19C RHM1.0ARCT-ND Rohm Semiconductor
RES 10 OHM 1W 1% 2512
3 10R,1W SMD R21A, R21B, R21C PT10AECT-ND Panasonic - ECG
R23A, R23B, R25A,
RES 100K OHM 1/10W 5% R25B, R25C, R39,
7 100k 0603 SMD R40 RHM100KGCT-ND Rohm Semiconductor
RES 2.2K OHM 1/8W 5% 0805
3 2.2K SMD R24A, R24B, R24C RHM2.2KARCT-ND Rohm Semiconductor
RES 3.3K OHM 1/10W 5% 0603
2 3.3K SMD R27A, R42 RHM3.3KGCT-ND Rohm Semiconductor
RES 15K OHM 1/10W 5% 0603
2 15K SMD R30B, R30C RHM15KGCT-ND Rohm Semiconductor
RES 5.1K OHM 1/8W 5% 0805
1 5.1k SMD R31 RHM5.1KARCT-ND Rohm Semiconductor
RES 5.1K OHM 1/10W 5% 0603
1 5.1k SMD R36 RHM5.1KGCT-ND Rohm Semiconductor
RES 120K OHM 1/10W 5%
1 120k 0603 SMD R41 RHM120KGCT-ND Rohm Semiconductor
RES 330 OHM 1W 5% 2512
2 330R,1W SMD R43, R47 PT330XCT-ND Panasonic - ECG
RES 510 OHM 1W 5% 2512
1 510R,1W SMD R44 PT510XCT-ND Panasonic - ECG
RES 33K OHM 1/10W 5% 0603
2 33k SMD R45, R46 RHM33KGCT-ND Rohm Semiconductor
THERMISTOR PTC 470 OHM Murata Electronics
3 95C 95C SMD RpA, RpB, RpC 490-2465-1-ND North America
Vishay/BC
1 10K TRIM POT ST-32TB 10 KOHMS VR1 ST32ETB103CT-ND Components
DIODE ZENER 24V 500MW
1 24V SOD-123 Z1 BZT52C24-FDICT-ND Diodes Inc
DIODE ZENER 15V 500MW
1 15V SOD-123 Z2 BZT52C15-FDICT-ND Diodes Inc
DIODE ZENER 39V 500MW
3 39V SOD-123 Z3, Z7, Z8 BZT52C39-FDICT-ND Diodes Inc
DIODE ZENER 18V 500MW
1 18V SOD-123 Z4 BZT52C18-FDICT-ND Diodes Inc
DIODE ZENER 5.6V 500MW
2 5.6V SOD-123 Z5, Z6 MMSZ5V6T1GOSCT-ND ON Semiconductor

Table 2 IRAUDAMP11 Mechanical Bill of Materials

Quantity Value Description Designator Digikey P/N Vendor
Lock washer 1, Lock washer 2,
WASHER LOCK INTERNAL Lock washer 3, Lock washer 4, Building
7 Washer #4 SS H729-ND
#4 SS Lock washer 5, Lock washer 6 Fasteners
Lock washer 7
Print Circuit Board
1 PCB PCB 1 Custom
IRAUDAM11 Rev 3.0 .PCB
Screw 1, Screw 2, Screw 3,
Screw 4- SCREW MACHINE PHILLIPS Building
7 Screw 4, Screw 5, Screw 6, H343-ND
40X5/16 4-40X5/16 Fasteners
Screw 7,
Keystone
STANDOFF HEX 4- Stand Off 1, Stand Off 2, Stand
4 Stand off 0.5" 1893K-ND Electro-
40THR .500"L ALUM Off 3, Stand Off 4
nics
THERMAL PAD .080" 4X4" Therm-
1/16 AAVID 4880G thermal pad under heatsink BER164-ND
GAPPAD alloy

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IRAUDAMP11 Hardware

IRAUDAMP11 Heat Spreader Note:

All dimensions are in millimeters
Tolerances are ±0.1mm
All thread holes are 4-40 X 8mm dip ,minimum Material:ALUMINUM

4.5 3 3 4.5

16
10.5

1.6 12 14

12

8 27 27 10

Fig 25 Heat Spreader

Screw Screw
H343-ND H343-ND
Lock washer Thermal Pad Lock washer
Th l d

Screw Screw
H343-ND Stand Off 3 H343-ND Stand Off 2
1893K-ND
Lock washer Lock washer 1893K-ND
Lock washer

Lock washer

Screw Screw
Screw
Stand Off 4 Lock washers Stand Off 1
1893K-ND H729-ND 1893K-ND
Screws
H343-ND

Fig 26 Hardware Assemblies

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IRAUDAMP11 PCB Specifications
PCB:

1. Two Layers SMT PCB with through holes

2. 1/16 thickness
3. 2/0 OZ Cu
4. FR4 material
5. 10 mil lines and spaces
6. Solder Mask to be Green enamel EMP110 DBG (CARAPACE) or Enthone Endplate
DSR-3241or equivalent.
7. Silk Screen to be white epoxy non conductive per IPC–RB 276 Standard.
8. All exposed copper must finished with TIN-LEAD Sn 60 or 63 for 100u inches thick.
9. Tolerance of PCB size shall be 0.010 –0.000 inches
10. Tolerance of all Holes is -.000 + 0.003”
11. PCB acceptance criteria as defined for class II PCB’S standards.

Gerber Files Apertures Description:

All Gerber files stored in the attached CD-ROM were generated from Protel Altium Designer
Altium Designer 6. Each file name extension means the following:

1. .gtl Top copper, top side

2. .gbl Bottom copper, bottom side
3. .gto Top silk screen
4. .gbo Bottom silk screen
5. .gts Top Solder Mask
6. .gbs Bottom Solder Mask
7. .gko Keep Out,
8. .gm1 Mechanical1
9. .gd1 Drill Drawing
10. .gg1 Drill locations
11. .txt CNC data
12. .apr Apertures data

Additional files for assembly that may not be related with Gerber files:

13. .pcb PCB file

14. .bom Bill of materials
15. .cpl Components locations
16. .sch Schematic
17. .csv Pick and Place Components
18. .net Net List
19. .bak Back up files
20. .lib PCB libraries

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 Fig 27 IRAUDAMP11 PCB Top Overlay (Top View)

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 Fig 28 IRAUDAMP11 PCB Bottom Layer (Top View)

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Revision changes descriptions
Revision Changes description Date
Rev 1.0 Released Oct, 08 2010

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 01/29/2009

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